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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP14N50D-GE3

Name: SIHP14N50D-GE3
Brand: Vishay Siliconix
SKU: SIHP14N50D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP14N50D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP14N50D-GE3.pdf

Description:: MOSFET N-CH 500V 14A TO220AB

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Product details

Overview

SIHP14N50D-GE3 from Vishay Siliconix is a 500 V, 14 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.4 Ω R_DS(on) at V_GS = 10 V, 58 nC total gate charge, and 56 mJ single-pulse avalanche energy-designed for high-efficiency SMPS in server power supplies and industrial motor drives.

For engineers reviewing the SIHP14N50D-GE3 datasheet, SIHP14N50D-GE3 pinout, SIHP14N50D-GE3 application, or SIHP14N50D-GE3 equivalent, key selection criteria include its 0.6 °C/W junction-to-case thermal resistance, 24 V/ns dV/dt ruggedness, body diode reverse recovery time of 319 ns, and RoHS-compliant, halogen-free construction.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low figure-of-merit (R_DS(on) × Q_g = 23.2 Ω·nC), enabling reduced conduction and switching losses in hard-switched topologies. Its 500 V V_DS rating supports 400 V bus designs with margin for transient overvoltage.

The device integrates a robust intrinsic body diode rated for 14 A continuous source-drain current and 56 mJ unclamped inductive switching energy (UIS), validated per JEDEC JESD24-1. Gate threshold voltage (3.0–5.0 V) ensures compatibility with standard 10 V gate drivers while maintaining noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC-link applications with 25 % voltage margin for transients
R_DS(on) max @ 10 V	0.4 Ω - enables ≤ 7.8 W conduction loss at 14 A, critical for thermal management in compact SMPS
Q_g max	58 nC - determines gate drive power requirement and switching speed in 100–500 kHz converters
E_AS	56 mJ - specifies safe single-pulse inductive energy handling without failure during overload conditions
R_thJC	0.6 °C/W - allows direct heatsink mounting to sustain 208 W power dissipation at T_C = 25 °C
Body diode t_rr	319 ns - impacts commutation losses and EMI in bridge configurations with freewheeling paths
dV/dt ruggedness	24 V/ns - ensures reliable operation under fast-rising drain transients common in high-frequency switching

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole configuration. Mounting via screw or clip to heatsink; tab electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal to fully enhance channel; 1.7 Ω input resistance minimizes driver loading
D (Drain)	High-side power terminal	Connected to DC bus or inductive load; tab is electrically tied to D for low-inductance heatsinking
S (Source)	Reference/return path	Serves as power ground reference for gate drive; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	23.2 Ω·nC - reduces combined conduction + switching losses in high-frequency SMPS
Avalanche-rated (UIS)	56 mJ - eliminates need for external snubbers in inductive load switching circuits
High body diode ruggedness	Rated for 14 A continuous source current and 56 A pulsed - supports bidirectional current in half-bridge freewheeling
Fast switching with low C_iss	1144 pF input capacitance - enables clean turn-on/turn-off with minimal gate drive power
RoHS-compliant & halogen-free	Meets IEC 61249-2-21 and JEDEC JS709A - required for global industrial and telecom equipment compliance

Applications

Server SMPS	Industrial Motor Drives
Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1–3 kW telecom rectifiers and server PSUs operating at 100–300 kHz. IC Role / Device Role / Timing Role: High-voltage, high-current switching element in LLC resonant and hard-switched forward topologies. Use Value: 0.4 Ω R_DS(on) and 58 nC Q_g enable >96 % efficiency at full load while maintaining thermal headroom on standard heatsinks.	Use Scenario: Inverter leg switch in 0.5–5 kW variable-frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Main power switch controlling motor phase voltage; handles repetitive 600 V bus spikes and regenerative braking currents. Use Value: 24 V/ns dV/dt rating and 56 mJ UIS withstand capability ensure reliability during rapid load transients and fault conditions.
Welding Power Supplies	Battery Chargers
Use Scenario: Output stage switch in IGBT-gated or MOSFET-based inverter welders delivering 100–300 A DC output. IC Role / Device Role / Timing Role: High-duty-cycle switching device in DC-link chopper or inverter stages with high peak current demands. Use Value: 38 A pulsed drain current rating and 14 A continuous body diode support high-peak, low-duty-cycle welding arcs without thermal runaway.	Use Scenario: Primary-side switch in 600–1000 W off-line battery chargers for EVSE, e-bikes, and UPS systems. IC Role / Device Role / Timing Role: Energy-transfer switch in flyback or quasi-resonant converters interfacing universal AC input to isolated DC output. Use Value: Low Q_gd/Q_g ratio (14/58) improves duty cycle control linearity and reduces cross-conduction risk in synchronous rectification schemes.

Server SMPS

Industrial Motor Drives

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1–3 kW telecom rectifiers and server PSUs operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element in LLC resonant and hard-switched forward topologies.

Use Value: 0.4 Ω R_DS(on) and 58 nC Q_g enable >96 % efficiency at full load while maintaining thermal headroom on standard heatsinks.

Use Scenario: Inverter leg switch in 0.5–5 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Main power switch controlling motor phase voltage; handles repetitive 600 V bus spikes and regenerative braking currents.

Use Value: 24 V/ns dV/dt rating and 56 mJ UIS withstand capability ensure reliability during rapid load transients and fault conditions.

Welding Power Supplies

Battery Chargers

Use Scenario: Output stage switch in IGBT-gated or MOSFET-based inverter welders delivering 100–300 A DC output.

IC Role / Device Role / Timing Role: High-duty-cycle switching device in DC-link chopper or inverter stages with high peak current demands.

Use Value: 38 A pulsed drain current rating and 14 A continuous body diode support high-peak, low-duty-cycle welding arcs without thermal runaway.

Use Scenario: Primary-side switch in 600–1000 W off-line battery chargers for EVSE, e-bikes, and UPS systems.

IC Role / Device Role / Timing Role: Energy-transfer switch in flyback or quasi-resonant converters interfacing universal AC input to isolated DC output.

Use Value: Low Q_gd/Q_g ratio (14/58) improves duty cycle control linearity and reduces cross-conduction risk in synchronous rectification schemes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK50ZFP	500 V, 14 A, R_DS(on) = 0.42 Ω, Q_g = 65 nC, TO-220FP package (full-pack)	Higher gate charge increases driver loss; lower thermal resistance (0.55 °C/W) but smaller heatsink interface area	Prefer when footprint space is constrained and lower R_thJA is prioritized over gate drive efficiency
IXTH14N50L2	500 V, 14 A, R_DS(on) = 0.38 Ω, Q_g = 52 nC, TO-247AC package	Lower Q_g improves switching efficiency; TO-247 offers superior thermal performance but larger PCB area	Choose for higher-power designs (>250 W) where thermal margin outweighs cost and size penalties

Compared with STP14NK50ZFP and IXTH14N50L2, the SIHP14N50D-GE3 delivers optimal balance of gate drive simplicity (low Q_g), thermal interface capability (0.6 °C/W R_thJC), and cost-effective TO-220AB packaging-making it ideal for mid-power industrial and telecom SMPS where layout density and driver complexity are critical constraints.

Availability

SIHP14N50D-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, industrial motor drives, and battery charging systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHP14N50D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The D Series Power MOSFETs-including SIHP14N50D-GE3-are engineered for high-efficiency, high-voltage switching in industrial and telecom power conversion, emphasizing low R_DS(on) × Q_g, avalanche robustness, and thermally efficient packaging.

FAQ

What is the maximum continuous drain current rating for SIHP14N50D-GE3 at 100 °C case temperature?

The SIHP14N50D-GE3 has a maximum continuous drain current (I_D) of 9 A at T_C = 100 °C, derated linearly from 14 A at 25 °C using a 1.6 W/°C derating factor. This reflects real-world thermal limits when mounted on a heatsink with finite thermal resistance, and must be verified against actual board-level thermal design before final implementation.

Does SIHP14N50D-GE3 support logic-level gate drive?

No, SIHP14N50D-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 3.0 V to 5.0 V, and it is specified for full enhancement at V_GS = 10 V. Driving it with only 5 V may result in incomplete turn-on and excessive R_DS(on); a 10 V gate driver is required for rated performance.

What is the significance of the "-GE3" suffix in SIHP14N50D-GE3?

The "-GE3" suffix indicates that SIHP14N50D-GE3 is lead (Pb)-free and halogen-free, compliant with Vishay's Green Electronics initiative and meeting IEC 61249-2-21 requirements. It replaces the Pb-containing "-E3" variant and is compatible with standard SnPb and lead-free soldering processes up to 300 °C peak for 10 seconds.

Can SIHP14N50D-GE3 be used in synchronous rectification topologies?

SIHP14N50D-GE3 is not optimized for synchronous rectification due to its relatively high Q_gd/Q_g ratio (14/58) and body diode reverse recovery time (319 ns), which increase shoot-through risk and commutation loss. It is intended for primary-side switching; dedicated low-Q_rr, low-V_F rectifier MOSFETs are recommended for secondary-side use.

How is the avalanche energy rating of SIHP14N50D-GE3 validated?

The SIHP14N50D-GE3 is rated for 56 mJ single-pulse unclamped inductive switching (UIS) energy, tested per JEDEC JESD24-1 with V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, and I_AS = 7 A. This validates ruggedness under worst-case inductive turn-off transients but does not imply repetitive avalanche capability.

SIHP14N50D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1144 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP14N50D-GE3 FAQ

1.How can I place an order for SIHP14N50D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP14N50D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP14N50D-GE3 reliable?

The price and inventory of SIHP14N50D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP14N50D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP14N50D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP14N50D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP14N50D-GE3?

SIHP14N50D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP14N50D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP14N50D-GE3?

For technical support, including SIHP14N50D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP14N50D-GE3 requirements.

6.How does Aetrix verify that SIHP14N50D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP14N50D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP14N50D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP14N50D-GE3?

All SIHP14N50D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP14N50D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP14N50D-GE3 part is unused and in its original packaging.

Return procedure for SIHP14N50D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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