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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP14N60E-BE3

Name: SIHP14N60E-BE3
Brand: Vishay Siliconix
SKU: SIHP14N60E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP14N60E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP14N60E-BE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP14N60E-BE3 from Vishay Siliconix is a 600 V, 13 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.269 Ω (typ) at V_GS = 10 V, Q_g = 32 nC (typ), and E_AS = 136 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHP14N60E-BE3 datasheet, SIHP14N60E-BE3 pinout, SIHP14N60E-BE3 application, or SIHP14N60E-BE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), avalanche-rated ruggedness, and proven performance in 480 V DC bus switching with dV/dt capability up to 70 V/ns at T_J = 125 °C.

Technical Context

This MOSFET employs planar silicon technology with optimized gate oxide and cell layout to achieve ultra-low gate charge and reduced C_iss (1205 pF typ) while maintaining robust 600 V blocking capability. Its body diode exhibits t_rr = 281 ns and Q_rr = 3.4 μC under standardized conditions (I_F = 7 A, dI/dt = 100 A/μs).

The device operates with V_GS(th) = 2.0–4.0 V, supports ±30 V gate drive, and delivers stable R_DS(on) over temperature (ΔR_DS(on)/°C confirmed via normalized curves). Thermal resistance R_thJC = 0.85 °C/W enables high-power operation with minimal heatsink requirements in TO-220AB mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 480 V DC bus designs with 25 % voltage margin for transient clamping
R_DS(on) typ	0.269 Ω at V_GS = 10 V, I_D = 7 A - enables <1.3 W conduction loss at 7 A continuous current
Q_g typ	32 nC - reduces gate driver power demand and speeds switching transitions in hard-switched topologies
E_AS	136 mJ - ensures reliable unclamped inductive switching in PFC and motor drive fault conditions
C_iss	1205 pF at V_DS = 100 V - lowers Miller-induced turn-on risk and improves noise immunity in high-dV/dt environments
t_r/t_f	19/15 ns typ - supports >200 kHz switching in resonant and phase-shifted full-bridge converters
R_thJC	0.85 °C/W - allows 147 W dissipation with ≤125 °C junction rise above case at steady state

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC-compliant footprint. Thermal pad on drain side requires mechanical and thermal interface to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; input capacitance C_iss = 1205 pF shapes gate loop design and snubber needs
D (Drain)	High-side power terminal	Connected to heatsink tab; rated for 600 V blocking and 32 A pulsed current (I_DM)
S (Source)	Reference node / return path	Common source for gate drive and load current; body diode anode tied internally to S

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	8.6 Ω·nC - directly reduces total switching + conduction losses in high-frequency SMPS
Avalanche energy rating	136 mJ single-pulse - eliminates need for external clamping in PFC boost inductor flyback recovery
Body diode Q_rr	3.4 μC - minimizes commutation loss and EMI during synchronous rectification or freewheeling
dV/dt ruggedness	70 V/ns at T_J = 125 °C - prevents false turn-on in high-noise industrial inverters and welders
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) with 380–400 V DC input. IC Role / Device Role / Timing Role: High-voltage N-channel switch in active clamp forward or LLC resonant converter primary leg. Use Value: Low Q_g and C_iss reduce gate drive loss and improve ZVS initiation margin at 300–500 kHz.	Use Scenario: Boost PFC stage in -48 V telecom rectifier with 300 V AC input. IC Role / Device Role / Timing Role: Fast-switching MOSFET in continuous conduction mode (CCM) boost converter operating at 65–100 kHz. Use Value: 136 mJ E_AS withstands line surges and inductor saturation events without failure.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC link switching in string inverter MPPT stage with 600–1000 V DC bus. IC Role / Device Role / Timing Role: High-voltage switch in interleaved boost or buck-boost topology handling bidirectional power flow. Use Value: 600 V V_DS rating and 0.269 Ω R_DS(on) enable >98.5 % efficiency at 10 kW scale with minimal thermal derating.	Use Scenario: Inverter leg switching in 7.5 kW HVAC compressor drive with 400 V AC input. IC Role / Device Role / Timing Role: N-channel high-side switch in three-phase IGBT/MOSFET hybrid inverter output stage. Use Value: Body diode t_rr = 281 ns and low Q_rr suppress shoot-through risk and reduce snubber sizing in 16 kHz PWM.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) with 380–400 V DC input.

IC Role / Device Role / Timing Role: High-voltage N-channel switch in active clamp forward or LLC resonant converter primary leg.

Use Value: Low Q_g and C_iss reduce gate drive loss and improve ZVS initiation margin at 300–500 kHz.

Use Scenario: Boost PFC stage in -48 V telecom rectifier with 300 V AC input.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: 136 mJ E_AS withstands line surges and inductor saturation events without failure.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC link switching in string inverter MPPT stage with 600–1000 V DC bus.

IC Role / Device Role / Timing Role: High-voltage switch in interleaved boost or buck-boost topology handling bidirectional power flow.

Use Value: 600 V V_DS rating and 0.269 Ω R_DS(on) enable >98.5 % efficiency at 10 kW scale with minimal thermal derating.

Use Scenario: Inverter leg switching in 7.5 kW HVAC compressor drive with 400 V AC input.

IC Role / Device Role / Timing Role: N-channel high-side switch in three-phase IGBT/MOSFET hybrid inverter output stage.

Use Value: Body diode t_rr = 281 ns and low Q_rr suppress shoot-through risk and reduce snubber sizing in 16 kHz PWM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK60ZFP	600 V, 14 A, R_DS(on) = 0.33 Ω, Q_g = 45 nC, no E_AS rating specified	Lacks avalanche energy specification; higher conduction loss at same current	Prefer SIHP14N60E-BE3 where unclamped inductive stress is present (e.g., PFC, welder)
IXTH14N60L2	600 V, 14 A, R_DS(on) = 0.28 Ω, Q_g = 35 nC, E_AS = 120 mJ, TO-247 package	Higher thermal resistance (R_thJC ≈ 0.55 °C/W) but larger package; slightly lower E_AS	Choose SIHP14N60E-BE3 for TO-220AB footprint compatibility and superior dV/dt immunity (70 vs. 50 V/ns)

Compared with STP14NK60ZFP and IXTH14N60L2, SIHP14N60E-BE3 offers the lowest R_DS(on) × Q_g FOM among TO-220AB-packaged 600 V MOSFETs, verified avalanche ruggedness, and highest dV/dt rating - making it optimal for space-constrained, high-reliability PFC and SMPS designs.

Availability

SIHP14N60E-BE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing locations.

Supply support for SIHP14N60E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIHP14N60E-BE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-frequency switch-mode power conversion in mission-critical infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for SIHP14N60E-BE3 at 100 °C case temperature?

The SIHP14N60E-BE3 has a continuous drain current rating of 8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 13 A rating at T_C = 25 °C, based on a linear derating factor of 1.2 W/°C and R_thJC = 0.85 °C/W. Engineers must verify heatsink design to maintain case temperature within limits for sustained 8 A operation.

Does SIHP14N60E-BE3 support logic-level gate drive?

No, SIHP14N60E-BE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. Full enhancement requires ≥10 V gate drive; operation below 8 V risks incomplete turn-on and excessive conduction loss. It is incompatible with 3.3 V or 5 V microcontroller outputs without level-shifting or gate driver amplification.

What is the significance of the "-BE3" suffix in SIHP14N60E-BE3?

The "-BE3" suffix in SIHP14N60E-BE3 denotes an alternate manufacturing location compliant with Vishay's lead (Pb)-free and halogen-free standards. Per Vishay documentation, it shares identical electrical specifications, thermal performance, and mechanical dimensions with the base SIHP14N60E, and is fully interchangeable in design and assembly. No requalification is required when substituting SIHP14N60E-BE3 for SIHP14N60E-GE3 or other BE3/GE3 variants.

How does the body diode performance of SIHP14N60E-BE3 compare to standard FRDs?

The SIHP14N60E-BE3 body diode has V_SD = 1.2 V at I_S = 7 A and T_J = 25 °C, with t_rr = 281 ns and Q_rr = 3.4 μC under standardized test conditions. While slower and higher-V_F than dedicated fast recovery diodes (FRDs), its parameters are optimized for synchronous rectification and freewheeling in hard-switched converters - not for standalone diode replacement. Use requires careful dead-time management to avoid cross-conduction.

Is SIHP14N60E-BE3 suitable for use in zero-voltage switching (ZVS) circuits?

Yes, SIHP14N60E-BE3 is well-suited for ZVS circuits due to its low C_iss (1205 pF) and C_oss (62 pF), which minimize resonant tank energy and improve soft-switching window predictability. Its 600 V rating and 136 mJ E_AS provide margin for transient voltage spikes during ZVS transitions. Verified performance in LLC and phase-shifted full-bridge topologies confirms robustness when operated with controlled gate timing and appropriate snubbing.

SIHP14N60E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 309mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1205 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP14N60E-BE3 FAQ

1.How can I place an order for SIHP14N60E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP14N60E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP14N60E-BE3 reliable?

The price and inventory of SIHP14N60E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP14N60E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP14N60E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP14N60E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP14N60E-BE3?

SIHP14N60E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP14N60E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP14N60E-BE3?

For technical support, including SIHP14N60E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP14N60E-BE3 requirements.

6.How does Aetrix verify that SIHP14N60E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP14N60E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP14N60E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP14N60E-BE3?

All SIHP14N60E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP14N60E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP14N60E-BE3 part is unused and in its original packaging.

Return procedure for SIHP14N60E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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