Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP14N60E-GE3

Name: SIHP14N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP14N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP14N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP14N60E-GE3.pdf

Description:: MOSFET N-CH 600V 13A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,456

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP14N60E-GE3 from Vishay Siliconix is a 600 V, 13 A N-channel enhancement-mode Power MOSFET in TO-220AB package, with R_DS(on) = 0.269 Ω (typ.) at V_GS = 10 V, Q_g = 32 nC (typ.), and E_AS = 136 mJ - designed for high-efficiency switch-mode power supplies and PFC stages in telecom and server power systems.

For engineers reviewing the SIHP14N60E-GE3 datasheet, SIHP14N60E-GE3 pinout, SIHP14N60E-GE3 application, or SIHP14N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), avalanche-rated ruggedness, and optimized C_iss/C_oss for ZVS/ZCS topologies in high-voltage DC-DC and AC-DC conversion.

Technical Context

This MOSFET employs planar silicon technology with optimized charge distribution to achieve low gate charge and reduced switching losses. Its 600 V V_DS rating and 136 mJ unclamped inductive switching (UIS) energy support robust operation in hard-switched PFC and LLC resonant converters.

The device features a fast body diode with t_rr = 281 ns and Q_rr = 3.4 μC at I_F = 7 A, enabling efficient freewheeling in bridge configurations. Thermal resistance R_thJC = 0.85 °C/W ensures effective heat transfer to heatsinks in high-power density designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with 50 % margin for voltage transients in industrial and telecom SMPS
R_DS(on) typ	0.269 Ω @ V_GS = 10 V - enables <1.3 W conduction loss at 7 A, reducing thermal load in continuous conduction mode
Q_g typ	32 nC - lowers gate drive power and enables use of smaller gate drivers in high-frequency (>100 kHz) PFC designs
E_AS	136 mJ - provides single-pulse avalanche capability for reliable operation during output short-circuit or overload events
C_iss	1205 pF - balances switching speed and EMI control in hard-switched topologies with 480 V V_DS transitions
t_r/t_f	19/15 ns - supports fast turn-on/turn-off with minimal overlap loss in synchronous rectification and half-bridge circuits
R_thJC	0.85 °C/W - allows 147 W power dissipation with ≤125 °C case temperature rise, compatible with standard TO-220 heatsinking

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Mounting hole centered 0.150" (3.81 mm) from bottom edge; lead spacing 0.200" (5.08 mm).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; requires <32 nC charge for full enhancement; sensitive to ESD (±30 V rating)
D (Drain)	High-side power terminal	Connected to TO-220 tab; electrically tied to drain; must be insulated from heatsink unless system ground-referenced
S (Source)	Power return / reference node	Serves as local ground for gate drive; carries full load current (13 A continuous); forms source node for body diode conduction

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	8.6 Ω·nC - directly reduces total switching + conduction loss in high-frequency PFC, improving efficiency by ~0.5 % at 100 kHz
Avalanche energy rated (UIS)	136 mJ - eliminates need for external snubbers in inductive load switching, simplifying layout in motor drives and welding inverters
Fast body diode recovery	t_rr = 281 ns, Q_rr = 3.4 μC - minimizes reverse recovery loss and dV/dt-induced shoot-through in bridge-leg applications
Low C_oss (energy-related)	C_o(er) = 52 pF - reduces capacitive turn-on loss in ZVS circuits, enabling >300 kHz operation in resonant LLC converters

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3.3 kW 48 V output telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, operating at 150 kHz with synchronous rectification on secondary side. Use Value: Low Q_g and R_DS(on) reduce gate drive loss and conduction loss, achieving >96 % efficiency at full load while maintaining TJ < 130 °C.	Use Scenario: Boost PFC stage in dual-output 1.5 kW server PSU delivering 12 V and 54 V rails. IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch, driven by UCC28070 controller with 65 kHz switching frequency. Use Value: Avalanche rating and low C_iss enable stable operation under line surges and light-load ZVS transitions, extending reliability beyond 100 khr MTBF.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg IGBT co-driver MOSFET in gate driver stage; also used in auxiliary DC-DC bias supply. Use Value: 600 V rating and 150 °C T_J max allow direct integration into compact, fanless enclosures exposed to outdoor ambient up to 60 °C.	Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drive with regenerative braking. IC Role / Device Role / Timing Role: Low-side switching element in three-phase IGBT gate driver circuit; conducts reverse recovery current during commutation. Use Value: Fast body diode (t_rr = 281 ns) and low Q_rr suppress voltage spikes during regen, eliminating need for external anti-parallel diodes.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3.3 kW 48 V output telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, operating at 150 kHz with synchronous rectification on secondary side.

Use Value: Low Q_g and R_DS(on) reduce gate drive loss and conduction loss, achieving >96 % efficiency at full load while maintaining TJ < 130 °C.

Use Scenario: Boost PFC stage in dual-output 1.5 kW server PSU delivering 12 V and 54 V rails.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch, driven by UCC28070 controller with 65 kHz switching frequency.

Use Value: Avalanche rating and low C_iss enable stable operation under line surges and light-load ZVS transitions, extending reliability beyond 100 khr MTBF.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg IGBT co-driver MOSFET in gate driver stage; also used in auxiliary DC-DC bias supply.

Use Value: 600 V rating and 150 °C T_J max allow direct integration into compact, fanless enclosures exposed to outdoor ambient up to 60 °C.

Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drive with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase IGBT gate driver circuit; conducts reverse recovery current during commutation.

Use Value: Fast body diode (t_rr = 281 ns) and low Q_rr suppress voltage spikes during regen, eliminating need for external anti-parallel diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK60ZFP	R_DS(on) = 0.36 Ω (higher), Q_g = 45 nC (higher), no UIS rating specified	Lacks avalanche energy specification; less suitable for unclamped inductive loads like welding or motor drives	Acceptable for cost-sensitive, non-avalanche-critical SMPS where thermal margin permits higher R_DS(on)
IXTH14N60L2	R_DS(on) = 0.32 Ω, Q_g = 28 nC, TO-247 package, 100 % UIS tested	Larger TO-247 footprint; higher R_DS(on) but lower Q_g; same 600 V rating and ruggedness	Preferred when board space allows TO-247 and higher peak current (14 A) is required; not drop-in for TO-220AB layouts

Compared with STP14NK60ZFP and IXTH14N60L2, SIHP14N60E-GE3 delivers the lowest R_DS(on) × Q_g FOM in TO-220AB, making it optimal for thermally constrained, high-frequency PFC and server power where layout compatibility and avalanche safety are jointly critical.

Availability

SIHP14N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHP14N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFETs, including SIHP14N60E-GE3, are engineered for high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems - emphasizing low FOM, rugged UIS performance, and consistent parametric stability across temperature.

FAQ

What is the maximum continuous drain current for SIHP14N60E-GE3 at 100 °C case temperature?

The SIHP14N60E-GE3 supports 8 A continuous drain current at T_C = 100 °C, derated linearly from 13 A at 25 °C using a 1.2 W/°C factor. This rating assumes proper heatsinking and junction temperature maintained below 150 °C. The SIHP14N60E-GE3 datasheet specifies this limit in the Absolute Maximum Ratings table under "Continuous drain current (T_J = 150 °C)".

Does SIHP14N60E-GE3 have a fully rated avalanche capability?

Yes, SIHP14N60E-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 136 mJ (single pulse, T_J = 25 °C). This value is measured per JEDEC standard JESD24-1 with L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.1 A. The SIHP14N60E-GE3's avalanche ruggedness is confirmed in the Product Summary and Absolute Maximum Ratings sections.

What is the typical gate threshold voltage range for SIHP14N60E-GE3?

The SIHP14N60E-GE3 has a gate-source threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while avoiding false triggering from noise. The SIHP14N60E-GE3's V_GS(th) is specified in the "Specifications" table under Static parameters.

Can SIHP14N60E-GE3 be used in zero-voltage switching (ZVS) circuits?

Yes, SIHP14N60E-GE3 is well-suited for ZVS applications due to its low C_o(er) = 52 pF and C_iss = 1205 pF, which minimize capacitive turn-on loss. Its 600 V rating and fast body diode (t_rr = 281 ns) support resonant operation in LLC and phase-shifted full-bridge topologies. The SIHP14N60E-GE3's dynamic capacitance values are verified in the "Specifications" section.

Is the TO-220AB package of SIHP14N60E-GE3 lead (Pb)-free and halogen-free?

Yes, SIHP14N60E-GE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section of the Vishay datasheet (S22-0949-Rev. C). The "-GE3" suffix explicitly denotes compliance with RoHS Directive 2011/65/EU and halogen-free standards per Vishay specification #99912. The SIHP14N60E-GE3 meets material categorization requirements for environmentally regulated markets.

SIHP14N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 309mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1205 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP14N60E-GE3 FAQ

1.How can I place an order for SIHP14N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP14N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP14N60E-GE3 reliable?

The price and inventory of SIHP14N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP14N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP14N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP14N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP14N60E-GE3?

SIHP14N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP14N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP14N60E-GE3?

For technical support, including SIHP14N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP14N60E-GE3 requirements.

6.How does Aetrix verify that SIHP14N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP14N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP14N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP14N60E-GE3?

All SIHP14N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP14N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP14N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP14N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …