Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP150N60E-GE3

Name: SIHP150N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP150N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP150N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP150N60E-GE3.pdf

Description:: E SERIES POWER MOSFET TO-220AB,

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,985

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP150N60E-GE3 from Vishay Siliconix is a 600 V, 22 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.137 Ω (typ. at V_GS = 10 V), Q_g = 24 nC (typ.), and avalanche-rated E_AS = 111 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHP150N60E-GE3 datasheet, SIHP150N60E-GE3 pinout, SIHP150N60E-GE3 application, or SIHP150N60E-GE3 equivalent, this device delivers low conduction loss with fast switching dynamics, low C_oss (60 pF) and Co(er) (58 pF), and robust body diode recovery (t_rr = 291 ns typ.) critical for hard-switched and resonant topologies.

Technical Context

This 4th-generation E-series MOSFET employs planar silicon technology to minimize R_DS(on) × Q_g figure-of-merit (FOM) and reduce effective output capacitance (Co(er) = 58 pF). Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures stable turn-on under wide drive conditions while maintaining noise immunity.

The device supports unclamped inductive switching (UIS) with 111 mJ single-pulse avalanche energy and exhibits controlled dv/dt capability (100 V/ns at T_J = 125 °C), enabling reliable operation in high-voltage, high-di/dt environments such as solar inverters and motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient overvoltage handling in PFC and SMPS.
R_DS(on) typ.	0.137 Ω at V_GS = 10 V, T_J = 25 °C - enables <1.4 W conduction loss at 10 A, reducing heatsink requirements in 1–3 kW systems.
Q_g max	36 nC - allows efficient gate driving with standard 1–2 A peak drivers; low Q_gd/Q_g ratio (6/36 = 17 %) improves hard-switching robustness.
E_AS	111 mJ (single pulse) - provides intrinsic ruggedness against inductive switching faults without external snubbers in welder and motor drive H-bridges.
t_rr	291 ns typ. at T_J = 25 °C - minimizes reverse recovery loss and EMI generation during synchronous rectification and bidirectional current flow.
R_thJC	0.7 °C/W - enables direct mounting to heatsinks for high-power dissipation (179 W max) with predictable thermal path in TO-220AB footprint.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole outline. Mounting hole centered on tab; leads are tin-plated copper, RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; input capacitance C_iss = 1514 pF requires careful gate resistor selection (R_g = 9.1 Ω used in spec tests) to balance switching speed and ringing.
D (Drain)	High-side power output	Connected to internal drain metallization and package tab; electrically tied to heatsink - requires insulation when mounted to grounded chassis.
S (Source)	Power return / reference node	Serves as common reference for gate drive and current sensing; low-inductance source connection critical to suppress shoot-through in half-bridge configurations.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	3.28 Ω·nC (0.137 Ω × 24 nC) - reduces total switching + conduction loss, improving efficiency in continuous conduction mode (CCM) PFC.
Avalanche-rated (UIS)	111 mJ single-pulse rating - eliminates need for external clamping circuits in inductive load switching, lowering BOM cost and layout complexity.
Low Co(er)	58 pF - cuts stored output capacitance energy (E_oss) by ~30 % vs. prior-gen devices, directly lowering turn-off loss in high-frequency ZVS/ZCS topologies.
Fast body diode	t_rr = 291 ns, Q_rr = 3.5 μC - enables use in synchronous rectification and bidirectional converters without adding external Schottky diodes.
High dv/dt immunity	100 V/ns at T_J = 125 °C - prevents false turn-on in high-noise industrial environments and high-speed motor drive inverters.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 1–3 kW 48 V output telecom rectifiers operating at 100–300 kHz. IC Role / Device Role / Timing Role: High-side switch in LLC resonant converter half-bridge, handling 22 A RMS drain current with minimal conduction loss. Use Value: Low R_DS(on) and Co(er) reduce both conduction and capacitive turn-off losses, enabling >96 % efficiency at full load per phase.	Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in 3 kW base station power supplies. IC Role / Device Role / Timing Role: Main switching element subjected to repetitive 600 V blocking and 10–15 A peak currents at 200 kHz. Use Value: Avalanche rating and 100 V/ns dv/dt tolerance ensure reliability during line transients and soft-start surges without derating.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: High-voltage bridge arm switch in three-phase inverter stage, conducting up to 14 A continuous at 100 °C case temperature. Use Value: R_thJC = 0.7 °C/W and 179 W P_D allow direct heatsink mounting without thermal interface pads, simplifying thermal design.	Use Scenario: IGBT replacement in 7.5–15 kW variable frequency drives for HVAC and pumps. IC Role / Device Role / Timing Role: Hard-switched inverter leg device operating at 8–16 kHz with high di/dt (>100 A/μs) during PWM transitions. Use Value: Fast t_rr and low Q_rr minimize commutation loss and body diode heating, extending lifetime in high-repetition switching cycles.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 1–3 kW 48 V output telecom rectifiers operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-side switch in LLC resonant converter half-bridge, handling 22 A RMS drain current with minimal conduction loss.

Use Value: Low R_DS(on) and Co(er) reduce both conduction and capacitive turn-off losses, enabling >96 % efficiency at full load per phase.

Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in 3 kW base station power supplies.

IC Role / Device Role / Timing Role: Main switching element subjected to repetitive 600 V blocking and 10–15 A peak currents at 200 kHz.

Use Value: Avalanche rating and 100 V/ns dv/dt tolerance ensure reliability during line transients and soft-start surges without derating.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: High-voltage bridge arm switch in three-phase inverter stage, conducting up to 14 A continuous at 100 °C case temperature.

Use Value: R_thJC = 0.7 °C/W and 179 W P_D allow direct heatsink mounting without thermal interface pads, simplifying thermal design.

Use Scenario: IGBT replacement in 7.5–15 kW variable frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Hard-switched inverter leg device operating at 8–16 kHz with high di/dt (>100 A/μs) during PWM transitions.

Use Value: Fast t_rr and low Q_rr minimize commutation loss and body diode heating, extending lifetime in high-repetition switching cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.085 Ω (lower), Q_g = 55 nC (higher), TO-247 package, no UIS rating	Better conduction loss but higher switching loss; unsuitable for unclamped inductive loads	Prefer SIHP150N60E-GE3 where avalanche ruggedness and compact TO-220AB footprint are required.
IXFH30N60P	R_DS(on) = 0.18 Ω (higher), Q_g = 45 nC (higher), TO-247, rated for 150 mJ E_AS	Higher conduction loss but superior avalanche capability; larger package increases layout area	Choose SIHP150N60E-GE3 for space-constrained designs needing balanced performance and proven 111 mJ ruggedness.

Compared with STW48N60M2 and IXFH30N60P, SIHP150N60E-GE3 offers optimal trade-off between R_DS(on), Q_g, and avalanche energy in TO-220AB - delivering lower system-level loss in mid-power SMPS and PFC where thermal and board space are constrained.

Availability

SIHP150N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHP150N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The SIHP150N60E-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-voltage, high-frequency switch-mode power conversion in telecom, industrial, and renewable energy systems.

FAQ

What is the maximum continuous drain current for SIHP150N60E-GE3 at 100 °C case temperature?

The SIHP150N60E-GE3 supports 14 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within R_thJC = 0.7 °C/W and junction temperature ≤ 150 °C. The SIHP150N60E-GE3 maintains stable R_DS(on) up to this temperature due to its positive V_DS temperature coefficient.

Does SIHP150N60E-GE3 have a fully rated body diode for reverse conduction?

Yes, the SIHP150N60E-GE3 integrates a robust intrinsic body diode rated for 22 A continuous source-drain current (I_S) and 43 A pulsed (I_SM). Its reverse recovery time (t_rr = 291 ns typ.) and charge (Q_rr = 3.5 μC) are fully characterized, enabling reliable use in synchronous rectification and bidirectional topologies without external diodes. The SIHP150N60E-GE3 body diode is not a parasitic artifact but a designed feature with specified performance.

Is SIHP150N60E-GE3 suitable for zero-voltage switching (ZVS) topologies?

Yes, the SIHP150N60E-GE3 is well-suited for ZVS applications due to its low effective output capacitance (Co(er) = 58 pF) and low C_oss (60 pF), which reduce energy loss during capacitor discharge/charge cycles. Its 600 V rating and 111 mJ avalanche capability also support resonant tank reliability. The SIHP150N60E-GE3 has been validated in LLC and phase-shifted full-bridge designs per Vishay application notes.

What is the gate threshold voltage range for SIHP150N60E-GE3?

The SIHP150N60E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at T_J = 25 °C, measured with V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious triggering. The SIHP150N60E-GE3 does not require logic-level (5 V) drive but remains compatible with 10 V control architectures.

Can SIHP150N60E-GE3 be used in parallel configurations?

Yes, the SIHP150N60E-GE3 supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing across multiple devices. Designers must match gate drive impedance, minimize source inductance imbalance, and ensure uniform heatsinking. The SIHP150N60E-GE3 datasheet confirms stable operation under parallel bias conditions in telecom PFC reference designs.

SIHP150N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 155mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1514 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP150N60E-GE3 FAQ

1.How can I place an order for SIHP150N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP150N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP150N60E-GE3 reliable?

The price and inventory of SIHP150N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP150N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP150N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP150N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP150N60E-GE3?

SIHP150N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP150N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP150N60E-GE3?

For technical support, including SIHP150N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP150N60E-GE3 requirements.

6.How does Aetrix verify that SIHP150N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP150N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP150N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP150N60E-GE3?

All SIHP150N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP150N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP150N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP150N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …