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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP155N60EF-GE3

Name: SIHP155N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHP155N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP155N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP155N60EF-GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP155N60EF-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.137 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and fast body diode with 95 ns reverse recovery time. It is engineered for high-efficiency switching in server power supplies, PFC stages, and solar inverters.

For engineers reviewing the SIHP155N60EF-GE3 datasheet, SIHP155N60EF-GE3 pinout, SIHP155N60EF-GE3 application, or SIHP155N60EF-GE3 equivalent, key selection criteria include avalanche-rated UIS performance (111 mJ), low Co(er) of 61 pF, and thermal resistance R_thJC of 0.7 °C/W - critical for high-power density SMPS designs.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series silicon technology optimized for reduced conduction and switching losses. Its low figure-of-merit (R_DS(on) × Q_g) and energy-related output capacitance (Co(er)) enable high-frequency operation in hard-switched topologies.

The integrated fast-recovery body diode supports synchronous rectification and ZVS-assisted transitions. Rated for 100 V/ns dv/dt and 50 V/ns reverse diode dv/dt, it maintains robustness under rapid voltage transients common in telecom and industrial PFC circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % margin for transient overvoltage in PFC and PV inverter DC-link stages
R_DS(on) typ	0.137 Ω at V_GS = 10 V - enables <1.4 W conduction loss at 10 A, reducing heatsink requirements in 1–3 kW systems
Q_g max	38 nC - determines gate drive power and switching speed; compatible with standard 1-A peak drivers at ≤100 kHz
E_AS	111 mJ - unclamped inductive switching capability ensures reliability during load dump or short-circuit events
R_thJC	0.7 °C/W - allows >150 W continuous dissipation with modest heatsinking, supporting high-power-density server PSU designs
t_rr	95 ns typical - minimizes diode recovery loss and EMI in bridge-leg configurations with fast di/dt
I_D cont @ T_C=100°C	14 A - defines usable current derating in thermally constrained enclosures without forced air

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and JEDEC-compliant footprint. Thermal pad on drain side enables direct heatsink attachment with low thermal impedance.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring 10 V threshold; 0.9 Ω typical gate input resistance limits ringing in high-dV/dt environments
D	Drain	Main power output node; electrically connected to metal tab for low-inductance heatsinking and thermal path
S	Source	Power return and reference node for gate drive; forms common source configuration with low parasitic inductance

Key Features

Feature	Design Value
Fast body diode	95 ns t_rr, 12 A I_RRM, and 0.5 μC Q_rr reduce switching loss and voltage overshoot in freewheeling paths
Low Co(er)	61 pF - lowers stored output energy (E_oss) and improves efficiency in high-frequency hard-switched converters
Avalanche rated	111 mJ single-pulse UIS - eliminates need for external snubbers in inductive load switching applications
Low R_DS(on) × Q_g	5.2 - industry-leading FOM enabling optimal trade-off between conduction and switching loss up to 200 kHz
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912)

Applications

Server Power Supplies	Photovoltaic Inverters
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1–3 kW AC/DC front-end units with active PFC and LLC resonant stages. IC Role / Device Role / Timing Role: High-voltage switching device in boost PFC and asymmetrical half-bridge primary switches. Use Value: 0.137 Ω R_DS(on) and 38 nC Q_g enable >96 % efficiency at full load while maintaining thermal headroom at 70 °C ambient.	Use Scenario: DC-link switching in string-level 5–10 kW transformerless solar inverters operating at 1000 V DC bus. IC Role / Device Role / Timing Role: N-channel switch in three-phase inverter leg with bidirectional current handling via fast body diode. Use Value: 111 mJ E_AS and 100 V/ns dv/dt rating ensure robustness against grid fault transients and lightning surges.
Industrial Motor Drives	Fluorescent Ballast Lighting
Use Scenario: Inverter output stage in 3–7.5 HP variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: Low-side switch in 6-pack IGBT/MOSFET modules handling 10–15 A RMS motor phase current. Use Value: 95 ns t_rr and 12 A I_RRM suppress shoot-through risk and reduce EMI filter size in 16 kHz PWM operation.	Use Scenario: Resonant half-bridge switch in electronic ballasts for T5/T8 fluorescent lamps (20–60 W). IC Role / Device Role / Timing Role: High-frequency (25–65 kHz) switching element driving resonant LC tank with soft-start and dimming control. Use Value: Low C_oss (56 pF) and Co(er) (61 pF) minimize capacitive turn-on loss and improve zero-voltage switching margin.

Server Power Supplies

Photovoltaic Inverters

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1–3 kW AC/DC front-end units with active PFC and LLC resonant stages.

IC Role / Device Role / Timing Role: High-voltage switching device in boost PFC and asymmetrical half-bridge primary switches.

Use Value: 0.137 Ω R_DS(on) and 38 nC Q_g enable >96 % efficiency at full load while maintaining thermal headroom at 70 °C ambient.

Use Scenario: DC-link switching in string-level 5–10 kW transformerless solar inverters operating at 1000 V DC bus.

IC Role / Device Role / Timing Role: N-channel switch in three-phase inverter leg with bidirectional current handling via fast body diode.

Use Value: 111 mJ E_AS and 100 V/ns dv/dt rating ensure robustness against grid fault transients and lightning surges.

Industrial Motor Drives

Fluorescent Ballast Lighting

Use Scenario: Inverter output stage in 3–7.5 HP variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack IGBT/MOSFET modules handling 10–15 A RMS motor phase current.

Use Value: 95 ns t_rr and 12 A I_RRM suppress shoot-through risk and reduce EMI filter size in 16 kHz PWM operation.

Use Scenario: Resonant half-bridge switch in electronic ballasts for T5/T8 fluorescent lamps (20–60 W).

IC Role / Device Role / Timing Role: High-frequency (25–65 kHz) switching element driving resonant LC tank with soft-start and dimming control.

Use Value: Low C_oss (56 pF) and Co(er) (61 pF) minimize capacitive turn-on loss and improve zero-voltage switching margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.125 Ω, Q_g = 45 nC, no specified E_AS rating	Lacks avalanche energy spec; requires external clamping in inductive loads	Prefer SIHP155N60EF-GE3 where unclamped inductive stress is present
IXFH30N60P	R_DS(on) = 0.155 Ω, Q_g = 32 nC, t_rr = 120 ns	Slower body diode recovery increases switching loss in high-frequency PFC	Choose SIHP155N60EF-GE3 when diode recovery performance is critical for EMI or efficiency

Compared with STW48N60M2 and IXFH30N60P, the SIHP155N60EF-GE3 delivers superior balance of low R_DS(on), low Q_g, fast diode recovery, and guaranteed avalanche ruggedness - making it optimal for high-reliability, high-efficiency 600 V switching in telecom, solar, and industrial power systems.

Availability

SIHP155N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHP155N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The EF Series - including SIHP155N60EF-GE3 - was developed for high-frequency, high-voltage switching in next-generation power conversion systems demanding low loss, fast recovery, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for SIHP155N60EF-GE3 at 100 °C case temperature?

The SIHP155N60EF-GE3 supports 14 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink sizing using R_thJC = 0.7 °C/W and actual power dissipation.

Does SIHP155N60EF-GE3 have a specified avalanche energy rating?

Yes, the SIHP155N60EF-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 111 mJ, tested per standard conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 2.8 A). This rating is documented in the Absolute Maximum Ratings table and confirms ruggedness in real-world inductive load transients.

What is the typical reverse recovery time (t_rr) of the body diode in SIHP155N60EF-GE3?

The SIHP155N60EF-GE3 features a fast body diode with a typical reverse recovery time (t_rr) of 95 ns, measured at T_J = 25 °C, I_F = 10 A, di/dt = 100 A/μs, and V_R = 400 V. This value is confirmed in the "Drain-Source Body Diode Characteristics" section and supports efficient operation in bridge and resonant topologies.

Is SIHP155N60EF-GE3 lead (Pb)-free and halogen-free?

Yes, SIHP155N60EF-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's Green Standard (document #99912). The "-GE3" suffix explicitly denotes this environmental compliance, and the device uses matte tin plating on leads with no heavy metals or brominated flame retardants.

What is the gate-source threshold voltage range for SIHP155N60EF-GE3?

The SIHP155N60EF-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V, specified at V_DS = V_GS and I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drive while providing noise immunity against spurious triggering in noisy power environments.

SIHP155N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 155mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1465 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP155N60EF-GE3 FAQ

1.How can I place an order for SIHP155N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP155N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP155N60EF-GE3 reliable?

The price and inventory of SIHP155N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP155N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP155N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP155N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP155N60EF-GE3?

SIHP155N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP155N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP155N60EF-GE3?

For technical support, including SIHP155N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP155N60EF-GE3 requirements.

6.How does Aetrix verify that SIHP155N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP155N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP155N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP155N60EF-GE3?

All SIHP155N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP155N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP155N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHP155N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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