Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP15N50E-BE3

Name: SIHP15N50E-BE3
Brand: Vishay Siliconix
SKU: SIHP15N50E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP15N50E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP15N50E-BE3.pdf

Description:: N-CHANNEL 500V

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,829

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP15N50E-BE3 from Vishay Siliconix is a 500 V, 14.5 A N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for hard-switched SMPS topologies including PFC and flyback converters, with R_DS(on) = 0.243 Ω at V_GS = 10 V and Q_g = 33 nC (typ).

For engineers reviewing the SIHP15N50E-BE3 datasheet, SIHP15N50E-BE3 pinout, SIHP15N50E-BE3 application, or SIHP15N50E-BE3 equivalent, key selection criteria include avalanche energy rating (E_AS = 136 mJ), low C_iss (1162 pF), and thermal resistance R_thJC = 0.8 °C/W for high-efficiency power conversion design.

Technical Context

This device employs planar stripe silicon technology to achieve balanced conduction and switching losses. Its gate charge profile supports fast turn-on/turn-off with t_d(on) = 15 ns (typ) and t_f = 18 ns (typ) under V_DD = 400 V, I_D = 12 A, R_g = 9.1 Ω conditions.

The integrated body diode features t_rr = 265 ns (typ) and Q_rr = 3.2 μC at I_F = 7.5 A, dI/dt = 100 A/μs, enabling reliable operation in discontinuous conduction mode (DCM) flyback and two-switch forward converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for voltage transients
R_DS(on) max @ 25 °C	0.280 Ω - defines worst-case conduction loss at full load in PFC boost stages
Q_g max	66 nC - determines gate driver current requirement and switching loss trade-off
E_AS	136 mJ - enables unclamped inductive switching without failure in flyback snubberless designs
R_thJC	0.8 °C/W - allows 156 W power dissipation with ≤ 125 °C case-to-junction rise at T_C = 25 °C
C_iss	1162 pF - impacts gate drive loop stability and EMI filter sizing in high-frequency SMPS
V_GS(th)	2.0–4.0 V - ensures robust turn-on margin above logic-level gate drivers while avoiding spurious turn-on

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.6 mm creepage distance, and Pb-free/halogen-free construction per Vishay S22-0949-Rev. D.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel formation; requires 10 V drive for specified R_DS(on); max ±30 V rating
D	Drain	Main high-side power terminal; electrically connected to metal tab; handles 500 V blocking
S	Source	Power return and gate reference node; ties to PCB ground plane for low-inductance layout

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	0.243 Ω × 33 nC = 8.0 nΩ·nC - reduces combined conduction + switching loss in 65–100 kHz PFC stages
Avalanche-rated (UIS)	136 mJ single-pulse energy - eliminates need for external clamping in cost-sensitive flyback transformer designs
Low C_iss / C_oss ratio	1162 pF / 51 pF ≈ 22.8 - improves Miller effect immunity and enables stable operation with moderate gate resistance
Body diode Q_rr	3.2 μC - minimizes reverse recovery loss during hard commutation in two-switch forward converters
High dV/dt immunity	70 V/ns rated - suppresses false turn-on in high dv/dt environments such as LLC resonant half-bridge nodes

Applications

PC Silver Box / ATX Power Supplies	Two-Stage LED Lighting
Use Scenario: Primary-side switch in active PFC boost stage of 500–800 W desktop PC power supplies. IC Role / Device Role / Timing Role: High-voltage N-channel switching element synchronized to 65–70 kHz PWM controller. Use Value: Low Q_g and R_DS(on) reduce total losses by ≥1.2 W vs. legacy 0.35 Ω devices at 12 A RMS, improving 80 PLUS Gold efficiency compliance.	Use Scenario: Secondary-side synchronous rectifier or primary-side switch in constant-current LED driver with isolated flyback topology. IC Role / Device Role / Timing Role: Main power switch operating in DCM at 65–130 kHz, handling 350–450 V DC input. Use Value: 136 mJ E_AS rating permits snubberless operation, reducing BOM count and board space by eliminating RC clamp networks.
Power Factor Correction (PFC)	Two-Switch Forward Converter
Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for industrial AC-DC modules. IC Role / Device Role / Timing Role: High-side switching transistor driven by dedicated PFC IC with zero-current switching detection. Use Value: 0.243 Ω R_DS(on) limits conduction loss to <0.9 W at 14.5 A peak, supporting >96 % PFC efficiency at full load.	Use Scenario: Main switching device in isolated DC-DC converter for telecom power systems requiring 48 V input and 12 V output. IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET operating at 100–200 kHz with complementary gate drive. Use Value: Fast t_r/t_f (24/18 ns typ) and low C_oss (51 pF) minimize overlap loss and improve light-load regulation.

PC Silver Box / ATX Power Supplies

Two-Stage LED Lighting

Use Scenario: Primary-side switch in active PFC boost stage of 500–800 W desktop PC power supplies.

IC Role / Device Role / Timing Role: High-voltage N-channel switching element synchronized to 65–70 kHz PWM controller.

Use Value: Low Q_g and R_DS(on) reduce total losses by ≥1.2 W vs. legacy 0.35 Ω devices at 12 A RMS, improving 80 PLUS Gold efficiency compliance.

Use Scenario: Secondary-side synchronous rectifier or primary-side switch in constant-current LED driver with isolated flyback topology.

IC Role / Device Role / Timing Role: Main power switch operating in DCM at 65–130 kHz, handling 350–450 V DC input.

Use Value: 136 mJ E_AS rating permits snubberless operation, reducing BOM count and board space by eliminating RC clamp networks.

Power Factor Correction (PFC)

Two-Switch Forward Converter

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for industrial AC-DC modules.

IC Role / Device Role / Timing Role: High-side switching transistor driven by dedicated PFC IC with zero-current switching detection.

Use Value: 0.243 Ω R_DS(on) limits conduction loss to <0.9 W at 14.5 A peak, supporting >96 % PFC efficiency at full load.

Use Scenario: Main switching device in isolated DC-DC converter for telecom power systems requiring 48 V input and 12 V output.

IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET operating at 100–200 kHz with complementary gate drive.

Use Value: Fast t_r/t_f (24/18 ns typ) and low C_oss (51 pF) minimize overlap loss and improve light-load regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NF50	R_DS(on) = 0.30 Ω (max), Q_g = 45 nC (max), TO-220FP package (lower PD = 90 W)	Lower power handling; unsuitable for 156 W continuous dissipation	Select when thermal budget is constrained and peak current ≤ 10 A
IRFP460LC	R_DS(on) = 0.27 Ω (max), E_AS = 450 mJ, but C_iss = 2200 pF and Q_g = 120 nC	Higher ruggedness but significantly higher switching loss in high-frequency SMPS	Select only for ultra-rugged 500 V applications where switching frequency ≤ 30 kHz

Compared with STP15NF50 and IRFP460LC, SIHP15N50E-BE3 delivers superior FOM (8.0 vs. 13.5 and 32.4 nΩ·nC), enabling higher efficiency in 65–200 kHz PFC and flyback designs without sacrificing avalanche robustness.

Availability

SIHP15N50E-BE3 is available at Aetrix Electronics and suitable for PC silver box power supplies, LED lighting drivers, and industrial switch-mode power supplies requiring stable component supply and long-term lifecycle support.

Supply support for SIHP15N50E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in computing, lighting, and industrial power conversion, emphasizing low FOM, avalanche ruggedness, and thermally efficient packaging.

FAQ

What is the maximum continuous drain current rating for SIHP15N50E-BE3 at 100 °C case temperature?

The SIHP15N50E-BE3 has a continuous drain current rating of 9.2 A at T_C = 100 °C, derived from its 156 W maximum power dissipation and thermal resistance R_thJC = 0.8 °C/W. This value ensures safe operation in enclosed ATX power supply enclosures with limited airflow, where case temperatures commonly reach 90–100 °C under full load.

Does SIHP15N50E-BE3 have a fully rated avalanche capability, and what test conditions apply?

Yes, SIHP15N50E-BE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 136 mJ (single pulse). Per Vishay S22-0949-Rev. D, this is measured at V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.1 A. The device meets JEDEC JESD24-11 requirements for repetitive avalanche stress.

What is the gate threshold voltage range for SIHP15N50E-BE3, and how does it affect drive circuit design?

The gate threshold voltage V_GS(th) for SIHP15N50E-BE3 is specified from 2.0 V to 4.0 V at I_D = 250 μA. This range ensures compatibility with standard 10 V gate drivers while providing sufficient margin against spurious turn-on from noise or Miller coupling. Designers must ensure gate drive exceeds 4.0 V to guarantee full enhancement across temperature and process variation.

How does the body diode performance of SIHP15N50E-BE3 compare to standard silicon diodes in flyback applications?

The SIHP15N50E-BE3 body diode exhibits t_rr = 265 ns and Q_rr = 3.2 μC at I_F = 7.5 A, dI/dt = 100 A/μs - significantly faster than general-purpose rectifiers but slower than dedicated ultrafast diodes. In flyback DCM operation, this enables acceptable efficiency without external snubbers, though synchronous rectification is recommended for >90 % efficiency targets.

Is SIHP15N50E-BE3 compatible with lead-free reflow soldering processes?

Yes, SIHP15N50E-BE3 is qualified for lead-free soldering with a peak temperature rating of 300 °C for 10 seconds, per Vishay S22-0949-Rev. D. Its TO-220AB package uses matte tin plating and meets IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) 1, allowing direct placement into standard Pb-free reflow profiles without pre-baking.

SIHP15N50E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1162 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP15N50E-BE3 FAQ

1.How can I place an order for SIHP15N50E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP15N50E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP15N50E-BE3 reliable?

The price and inventory of SIHP15N50E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP15N50E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP15N50E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP15N50E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP15N50E-BE3?

SIHP15N50E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP15N50E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP15N50E-BE3?

For technical support, including SIHP15N50E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP15N50E-BE3 requirements.

6.How does Aetrix verify that SIHP15N50E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP15N50E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP15N50E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP15N50E-BE3?

All SIHP15N50E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP15N50E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP15N50E-BE3 part is unused and in its original packaging.

Return procedure for SIHP15N50E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …