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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP15N50E-GE3

Name: SIHP15N50E-GE3
Brand: Vishay Siliconix
SKU: SIHP15N50E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP15N50E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP15N50E-GE3.pdf

Description:: MOSFET N-CH 500V 14.5A TO220AB

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Product details

Overview

SIHP15N50E-GE3 from Vishay Siliconix is a 500 V, 14.5 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.243 Ω at V_GS = 10 V, Q_g = 33 nC (typ), and 136 mJ single-pulse avalanche energy - optimized for hard-switched PFC and flyback converters in ATX power supplies.

For engineers reviewing the SIHP15N50E-GE3 datasheet, SIHP15N50E-GE3 pinout, SIHP15N50E-GE3 application, or SIHP15N50E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), 70 V/ns dV/dt ruggedness, UIS-rated operation, and compatibility with 10 V gate drive in high-efficiency SMPS designs.

Technical Context

This MOSFET employs planar silicon technology with optimized charge distribution to achieve low input capacitance (C_iss = 1162 pF) and reduced gate-drain charge (Q_gd = 14 nC), enabling fast switching with minimal Miller-induced oscillation. Its body diode exhibits t_rr = 265 ns and Q_rr = 3.2 μC at I_F = 7.5 A, supporting moderate-frequency recovery in two-switch forward topologies.

The device is rated for continuous operation up to T_J = 150 °C with R_thJC = 0.8 °C/W, and features a V_GS(th) range of 2.0–4.0 V, ensuring robust turn-on margin under varying temperature and drive conditions while maintaining low leakage (I_DSS ≤ 10 μA at V_DS = 500 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports full bridge and PFC stages operating up to 400 V DC bus with 25 % safety margin
R_DS(on) max @ 10 V	0.280 Ω - limits conduction loss to ≤ 3.1 W at 7.5 A, enabling thermally constrained PCB layouts
Q_g max	66 nC - determines gate driver current requirement (≥ 1.3 A peak for 50 ns rise time)
E_AS	136 mJ - enables reliable unclamped inductive switching in flyback snubberless designs
C_iss	1162 pF - sets input impedance for gate drive loop stability analysis at 100–500 kHz
t_r/t_f	24/18 ns (typ) - defines minimum practical switching period for 1 MHz-class operation
V_SD	1.2 V - establishes forward drop penalty during synchronous rectification or body-diode conduction

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 4.8 mm creepage/clearance, and JEDEC-compliant outline for heatsink interface and mechanical reliability.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires <1.5 Ω series resistance to damp ringing from 1162 pF C_iss
D (Drain)	High-side power terminal	Connected to TO-220 tab; electrically tied to heatsink - mandates isolation washer for non-grounded thermal planes
S (Source)	Reference node / return path	Serves as local ground reference for gate drive; carries full load current and must be routed with low-inductance layout

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	8.2 Ω·nC (0.243 Ω × 33.7 nC typ) - directly reduces total switching + conduction loss in 100–300 kHz SMPS
Avalanche-rated (UIS)	136 mJ single-pulse - eliminates need for external clamping in cost-sensitive flyback transformer primary switches
High dV/dt immunity	70 V/ns - prevents false turn-on during fast voltage transients in hard-switched PFC boost stages
Low C_oss (energy-related)	55 pF - minimizes capacitive turn-off loss and improves light-load efficiency in discontinuous mode
Body diode Q_rr	3.2 μC - enables predictable reverse recovery behavior in two-switch forward and LLC resonant converters

Applications

PC ATX Silver Box Power Supply	Two-Stage LED Driver
Use Scenario: Primary-side switch in active PFC boost stage delivering 350–400 V DC bus at 500 W. IC Role / Device Role / Timing Role: High-voltage power switch controlling inductor current with 65–100 kHz PWM. Use Value: Low Q_g (33 nC) reduces gate driver losses; 136 mJ E_AS withstands line surges without snubber.	Use Scenario: Secondary-side high-side switch in constant-current buck stage driving 48 V LED strings. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in isolated flyback output stage. Use Value: 1.2 V V_SD and 265 ns t_rr minimize conduction and recovery loss versus discrete Schottky alternatives.
Hard-Switched Two-Switch Forward Converter	Industrial SMPS Auxiliary Supply
Use Scenario: Main switch pair in 200–500 W telecom-grade forward converter with 300 V input. IC Role / Device Role / Timing Role: Primary-side switching element operating at fixed 200 kHz with zero-voltage transition assist. Use Value: 70 V/ns dV/dt rating prevents spurious turn-on during transformer reset edge transitions.	Use Scenario: Standby supply switch in industrial PLC mainboard providing 12 V/1 A auxiliary rail. IC Role / Device Role / Timing Role: Low-duty-cycle primary switch in flyback topology powering control logic during sleep mode. Use Value: 10 μA I_DSS at 500 V ensures negligible standby leakage; TO-220AB enables direct heatsink mounting on metal chassis.

PC ATX Silver Box Power Supply

Two-Stage LED Driver

Use Scenario: Primary-side switch in active PFC boost stage delivering 350–400 V DC bus at 500 W.

IC Role / Device Role / Timing Role: High-voltage power switch controlling inductor current with 65–100 kHz PWM.

Use Value: Low Q_g (33 nC) reduces gate driver losses; 136 mJ E_AS withstands line surges without snubber.

Use Scenario: Secondary-side high-side switch in constant-current buck stage driving 48 V LED strings.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in isolated flyback output stage.

Use Value: 1.2 V V_SD and 265 ns t_rr minimize conduction and recovery loss versus discrete Schottky alternatives.

Hard-Switched Two-Switch Forward Converter

Industrial SMPS Auxiliary Supply

Use Scenario: Main switch pair in 200–500 W telecom-grade forward converter with 300 V input.

IC Role / Device Role / Timing Role: Primary-side switching element operating at fixed 200 kHz with zero-voltage transition assist.

Use Value: 70 V/ns dV/dt rating prevents spurious turn-on during transformer reset edge transitions.

Use Scenario: Standby supply switch in industrial PLC mainboard providing 12 V/1 A auxiliary rail.

IC Role / Device Role / Timing Role: Low-duty-cycle primary switch in flyback topology powering control logic during sleep mode.

Use Value: 10 μA I_DSS at 500 V ensures negligible standby leakage; TO-220AB enables direct heatsink mounting on metal chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NF50	R_DS(on) = 0.30 Ω (max), Q_g = 45 nC, no UIS rating	Lacks avalanche ruggedness; requires external clamping in inductive switching	Lower cost where surge immunity is managed externally and layout allows higher R_DS(on) loss
IRFP460LC	R_DS(on) = 0.27 Ω (max), Q_g = 120 nC, E_AS = 450 mJ	Higher Q_g increases gate drive loss; superior avalanche capability for harsh environments	Preferred when system-level surge testing exceeds 136 mJ or gate drive strength permits 120 nC charge

Compared with STP15NF50 and IRFP460LC, SIHP15N50E-GE3 delivers optimal balance of low switching loss (via 33 nC Q_g), sufficient avalanche margin (136 mJ), and 10 V gate compatibility - making it ideal for cost- and efficiency-sensitive mid-power SMPS where layout space and thermal budget constrain alternatives.

Availability

SIHP15N50E-GE3 is available at Aetrix Electronics and suitable for PC ATX power supplies, LED lighting drivers, and industrial switch-mode power supplies requiring stable component supply, lead-free compliance, and TO-220AB mechanical interchangeability.

Supply support for SIHP15N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFETs, including SIHP15N50E-GE3, were designed for high-efficiency, hard-switched AC-DC and DC-DC conversion in computing, lighting, and consumer power systems - emphasizing low FOM, ruggedness, and manufacturability.

FAQ

What is the maximum continuous drain current rating for SIHP15N50E-GE3 at 100 °C case temperature?

The SIHP15N50E-GE3 has a continuous drain current rating of 9.2 A at T_C = 100 °C, derated linearly from 14.5 A at 25 °C using a 1.25 W/°C factor. This value reflects thermal limits under real-world heatsink conditions and must be validated against actual board-level thermal resistance in the target application layout.

Does SIHP15N50E-GE3 support logic-level gate drive?

No, SIHP15N50E-GE3 is not a logic-level MOSFET; its V_GS(th) range is 2.0–4.0 V and it is specified for R_DS(on) at V_GS = 10 V. It requires a dedicated 10 V gate driver - not 3.3 V or 5 V microcontroller outputs - to achieve its rated 0.243 Ω on-resistance and avoid excessive conduction loss.

What is the significance of the "-GE3" suffix in SIHP15N50E-GE3?

The "-GE3" suffix indicates that SIHP15N50E-GE3 is lead (Pb)-free and halogen-free, compliant with Vishay's Green Electronics initiative and RoHS Directive 2011/65/EU. It denotes manufacturing at a qualified Vishay facility meeting IPC/JEDEC J-STD-609A Class 3 moisture sensitivity and Pb-free reflow profile requirements.

Can SIHP15N50E-GE3 replace SIHP15N50C-GE3 in an existing design?

SIHP15N50E-GE3 is not a direct replacement for SIHP15N50C-GE3: the "E" series offers lower Q_g (66 nC max vs. 95 nC max) and improved FOM but identical R_DS(on) and voltage ratings. Layout changes are not required, but gate drive strength and EMI filtering may need verification due to faster switching edges enabled by reduced Q_g.

What thermal resistance values apply to SIHP15N50E-GE3 in TO-220AB package?

SIHP15N50E-GE3 has R_thJC = 0.8 °C/W (max) from junction to case and R_thJA = 62 °C/W (max) from junction to ambient. The low R_thJC enables efficient heatsinking, while R_thJA applies only to still-air, no-heatsink conditions - actual system-level thermal performance depends on PCB copper area, heatsink interface, and airflow.

SIHP15N50E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1162 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP15N50E-GE3 FAQ

1.How can I place an order for SIHP15N50E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP15N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP15N50E-GE3 reliable?

The price and inventory of SIHP15N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP15N50E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP15N50E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP15N50E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP15N50E-GE3?

SIHP15N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP15N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP15N50E-GE3?

For technical support, including SIHP15N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP15N50E-GE3 requirements.

6.How does Aetrix verify that SIHP15N50E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP15N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP15N50E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP15N50E-GE3?

All SIHP15N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP15N50E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP15N50E-GE3 part is unused and in its original packaging.

Return procedure for SIHP15N50E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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