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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP15N60E-BE3

Name: SIHP15N60E-BE3
Brand: Vishay Siliconix
SKU: SIHP15N60E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP15N60E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP15N60E-BE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP15N60E-BE3 from Vishay Siliconix is a 600 V, 15 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.28 Ω (max) at V_GS = 10 V, Q_g = 78 nC (max), and E_AS = 102 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server power systems.

For engineers reviewing the SIHP15N60E-BE3 datasheet, SIHP15N60E-BE3 pinout, SIHP15N60E-BE3 application, or SIHP15N60E-BE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for ZVS/ZCS topologies, thermal resistance (R_thJC = 0.7 °C/W), and body diode recovery performance (t_rr = 604 ns max) in hard-switched industrial converters.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized charge balance for reduced conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures robust turn-on margin under wide temperature and drive conditions, while the integral body diode supports bidirectional current in bridge configurations.

The device is rated for repetitive unclamped inductive switching (UIS) up to 102 mJ and operates across -55 °C to +150 °C junction range. Its C_iss = 1350 pF (typ), C_oss = 70 pF (typ), and Cr_ss = 5 pF (typ) support predictable snubber design and EMI control in high-frequency SMPS designs above 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified rails with 50 % safety margin in PFC and DC-DC stages
R_DS(on) max @ 10 V	0.28 Ω - limits conduction loss to ≤ 63 W at 15 A continuous drain current (T_C = 25 °C)
Q_g max	78 nC - enables efficient gate driving with < 1 W driver loss at 100 kHz switching frequency
E_AS	102 mJ - sustains single-pulse inductive energy without failure in hard-switched flyback or forward converters
t_rr max	604 ns - defines minimum dead-time requirement to avoid shoot-through in synchronous rectification
R_thJC	0.7 °C/W - allows 180 W power dissipation with ≤ 126 °C junction rise over case at T_C = 25 °C
V_GS rating	±30 V - accommodates transient gate overshoot in high-dV/dt environments without oxide stress

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 4.8 mm creepage/clearance, and JEDEC-compliant outline. Thermal pad soldered to heatsink for optimal junction-to-ambient heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	High-impedance MOS control terminal; requires 10 V nominal drive for full enhancement; gate-source leakage ≤ ±1 μA at ±30 V
D	Drain	Main high-voltage power terminal; electrically connected to metal tab; must be insulated from heatsink unless system ground referenced
S	Source	Power return path and gate reference node; forms common source node in low-side switching; body diode anode

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	21.8 Ω·nC - reduces combined conduction and switching loss in 65–100 kHz PFC boost stages
Avalanche-rated (UIS)	102 mJ single-pulse - eliminates need for external clamping in inductive load switching applications
Ultra-low Q_gd/Q_g ratio	21.8 % (17/78 nC) - improves Miller immunity and enables faster, more controllable turn-off
Body diode t_rr & Q_rr	t_rr = 604 ns, Q_rr = 8 μC - minimizes reverse recovery loss and EMI in half-bridge LLC resonant converters
High dV/dt immunity	70 V/ns (drain), 7.7 V/ns (reverse diode) - suppresses false turn-on in high-speed, high-side configurations

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) front-end converters with active PFC and phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-voltage, high-current main switch handling 400 V DC bus with 15 A peak current and 100 kHz switching frequency. Use Value: Low R_DS(on) and Q_g reduce total power loss by ≥12 % vs. legacy 650 V MOSFETs, improving system efficiency from 94.2 % to 95.1 % at full load.	Use Scenario: Output rectification and isolation in 48 V intermediate bus converters for 5G base station power shelves. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side center-tapped configuration operating at 250 kHz with zero-voltage switching. Use Value: Fast, soft-recovery body diode enables reliable ZVS during light-load transitions, reducing diode conduction loss by 35 % compared to discrete Schottky solutions.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string-level 10 kW microinverters with dual-stage conversion (boost + H-bridge). IC Role / Device Role / Timing Role: High-side boost switch in interleaved PFC stage, subjected to 600 V blocking and 12 A RMS current. Use Value: 150 °C max junction rating and 0.7 °C/W R_thJC allow operation at 85 °C ambient without derating, supporting compact heatsink design.	Use Scenario: Inverter leg switching in 7.5 kW HVAC variable-frequency drives using space-vector PWM at 8 kHz carrier frequency. IC Role / Device Role / Timing Role: Low-side IGBT/MOSFET replacement in three-phase inverter output stage with 400 V DC bus. Use Value: Avalanche energy rating ensures robustness against motor inductive kickback during emergency stop, eliminating need for external snubbers.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) front-end converters with active PFC and phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-voltage, high-current main switch handling 400 V DC bus with 15 A peak current and 100 kHz switching frequency.

Use Value: Low R_DS(on) and Q_g reduce total power loss by ≥12 % vs. legacy 650 V MOSFETs, improving system efficiency from 94.2 % to 95.1 % at full load.

Use Scenario: Output rectification and isolation in 48 V intermediate bus converters for 5G base station power shelves.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side center-tapped configuration operating at 250 kHz with zero-voltage switching.

Use Value: Fast, soft-recovery body diode enables reliable ZVS during light-load transitions, reducing diode conduction loss by 35 % compared to discrete Schottky solutions.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string-level 10 kW microinverters with dual-stage conversion (boost + H-bridge).

IC Role / Device Role / Timing Role: High-side boost switch in interleaved PFC stage, subjected to 600 V blocking and 12 A RMS current.

Use Value: 150 °C max junction rating and 0.7 °C/W R_thJC allow operation at 85 °C ambient without derating, supporting compact heatsink design.

Use Scenario: Inverter leg switching in 7.5 kW HVAC variable-frequency drives using space-vector PWM at 8 kHz carrier frequency.

IC Role / Device Role / Timing Role: Low-side IGBT/MOSFET replacement in three-phase inverter output stage with 400 V DC bus.

Use Value: Avalanche energy rating ensures robustness against motor inductive kickback during emergency stop, eliminating need for external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NM60ND	R_DS(on) = 0.32 Ω (max), Q_g = 65 nC, E_AS = 85 mJ, TO-220FP package (isolated drain)	Lower gate charge but reduced avalanche capability and higher on-resistance; requires larger heatsink at same current	Preferred where gate drive power is critical and inductive stress is low
IXTH15N60L2	R_DS(on) = 0.27 Ω (max), Q_g = 85 nC, E_AS = 120 mJ, TO-247AC package (higher thermal mass)	Higher avalanche rating and better thermal performance but larger footprint and cost; not drop-in compatible	Selected when extended UIS margin and long-term reliability under overload are mandatory

Compared with STP15NM60ND and IXTH15N60L2, SIHP15N60E-BE3 delivers the best balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness in a cost-effective TO-220AB form factor - making it ideal for volume production of mid-power industrial and telecom power supplies.

Availability

SIHP15N60E-BE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, consistent parametric performance across manufacturing lots, and long-term lifecycle support.

Supply support for SIHP15N60E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIHP15N60E-BE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-reliability switching in industrial and communications power systems where ruggedness, thermal stability, and consistent parametric behavior are critical.

FAQ

What is the maximum continuous drain current rating for SIHP15N60E-BE3 at 100 °C case temperature?

The SIHP15N60E-BE3 has a continuous drain current rating of 9.6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHP15N60E-BE3 maintains R_DS(on) stability across this range due to its positive temperature coefficient.

Does SIHP15N60E-BE3 support logic-level gate drive?

No, SIHP15N60E-BE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, but full enhancement requires V_GS = 10 V to achieve the specified R_DS(on) of 0.28 Ω max. Driving SIHP15N60E-BE3 with only 5 V may result in excessive conduction loss and thermal runaway. The SIHP15N60E-BE3 must be used with a dedicated 10–15 V gate driver.

What is the significance of the "-BE3" suffix in SIHP15N60E-BE3?

The "-BE3" suffix in SIHP15N60E-BE3 indicates a lead (Pb)-free and halogen-free version manufactured at an alternate Vishay facility, compliant with RoHS Directive 2011/65/EU and JEDEC JS709B. It shares identical electrical specifications, thermal performance, and mechanical dimensions with the base SIHP15N60E, and is fully interchangeable in design and assembly. The SIHP15N60E-BE3 meets Vishay's material categorization standards per document 99912.

How does the body diode performance of SIHP15N60E-BE3 impact its use in synchronous rectification?

The SIHP15N60E-BE3 body diode exhibits t_rr = 302–604 ns and Q_rr = 4.0–8.0 μC, enabling controlled reverse recovery in synchronous rectifier configurations. When used in low-side synchronous rectification, this performance reduces cross-conduction risk and EMI generation - but careful dead-time tuning is required. The SIHP15N60E-BE3 body diode is not optimized for ultra-fast recovery like dedicated SR FETs, so it is best applied in medium-frequency (<200 kHz) topologies.

Can SIHP15N60E-BE3 replace older 600 V MOSFETs such as IRFP460 in existing designs?

SIHP15N60E-BE3 offers lower R_DS(on) (0.28 Ω vs. 0.27 Ω typ for IRFP460), significantly lower Q_g (78 nC vs. 180 nC), and superior avalanche rating (102 mJ vs. 390 mJ for IRFP460 - though absolute values differ in test conditions). While pin-compatible in TO-220AB, layout review is essential due to different switching dynamics and gate drive requirements. The SIHP15N60E-BE3 can improve efficiency but may require gate resistor adjustment to manage dI/dt and EMI.

SIHP15N60E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP15N60E-BE3 FAQ

1.How can I place an order for SIHP15N60E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP15N60E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP15N60E-BE3 reliable?

The price and inventory of SIHP15N60E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP15N60E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP15N60E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP15N60E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP15N60E-BE3?

SIHP15N60E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP15N60E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP15N60E-BE3?

For technical support, including SIHP15N60E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP15N60E-BE3 requirements.

6.How does Aetrix verify that SIHP15N60E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP15N60E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP15N60E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP15N60E-BE3?

All SIHP15N60E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP15N60E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP15N60E-BE3 part is unused and in its original packaging.

Return procedure for SIHP15N60E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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