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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP15N60E-E3

Name: SIHP15N60E-E3
Brand: Vishay Siliconix
SKU: SIHP15N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP15N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP15N60E-E3.pdf

Description:: MOSFET N-CH 600V 15A TO220AB

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Product details

Overview

SIHP15N60E-E3 from Vishay Siliconix is a 600 V, 15 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.28 Ω (max) at V_GS = 10 V, Q_g = 78 nC (max), and avalanche-rated (E_AS = 102 mJ). It delivers low conduction and switching losses for high-efficiency SMPS and PFC stages in telecom and server power supplies.

For engineers reviewing the SIHP15N60E-E3 datasheet, SIHP15N60E-E3 pinout, SIHP15N60E-E3 application, or SIHP15N60E-E3 equivalent, key selection criteria include its 600 V V_DS, 0.28 Ω R_DS(on), 78 nC total gate charge, TO-220AB thermal performance (R_thJC = 0.7 °C/W), and UIS-rated ruggedness - all critical for hard-switched industrial and renewable energy inverters.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage switching with low figure-of-merit (R_DS(on) × Q_g). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers, while its C_iss = 1350 pF (typ) and C_oss = 70 pF (typ) support fast, controlled transitions under 480 V bus conditions.

The integrated body diode exhibits t_rr = 302–604 ns and Q_rr = 4.0–8.0 μC at I_F = 8 A, enabling moderate-frequency freewheeling in continuous conduction mode (CCM) PFC. Its 150 °C maximum junction temperature and 180 W power dissipation rating allow operation in thermally constrained enclosures when mounted on heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input rectified to ~560 V DC bus with margin for transient spikes in telecom/server PSUs
R_DS(on) max	0.28 Ω at V_GS = 10 V, T_J = 25 °C - limits conduction loss to ≤2.2 W at 10 A DC, enabling compact thermal design
Q_g max	78 nC - determines gate drive power requirement (~0.78 mW per 100 kHz switch cycle at 10 V drive)
E_AS	102 mJ - enables unclamped inductive switching survival without external snubbers in motor drive or welder H-bridges
R_thJC	0.7 °C/W - allows 126 W junction-to-case heat transfer at ΔT = 88 °C, supporting high-power density layouts
I_D cont	15 A at T_C = 25 °C - defines maximum continuous current under ideal heatsinking; derates to 9.6 A at T_C = 100 °C
V_GS(th)	2–4 V - ensures full enhancement with industry-standard 10 V gate drivers while avoiding spurious turn-on from noise

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, 0.7 °C/W junction-to-case thermal resistance, and JEDEC-compliant outline.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; requires <78 nC charge to fully enhance; low C_iss reduces driver loading
D (Drain)	High-side power terminal	Connected to TO-220 tab; carries full load current and withstands 600 V; must be electrically isolated from heatsink unless specified
S (Source)	Reference node / return path	Common reference for gate drive and current sensing; ties to power ground; body diode anode

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	21.8 Ω·nC (0.28 Ω × 78 nC) - directly improves efficiency in 100–300 kHz SMPS by reducing combined conduction + switching loss
Avalanche energy rating	102 mJ single-pulse - eliminates need for external clamping in inductive load switching (e.g., PFC boost chokes, motor phase legs)
Low C_iss (1350 pF typ)	Reduces gate drive current demand and EMI generation during hard switching at 480 V bus
Body diode t_rr (302–604 ns)	Enables reliable commutation in CCM PFC and half-bridge topologies without excessive diode loss or voltage overshoot
Lead (Pb)-free & halogen-free	Meets RoHS 2011/65/EU and Vishay's "Green" material categorization (doc# 99912)

Applications

Server Power Supplies	Photovoltaic Inverters
Use Scenario: Primary-side switching in 1–3 kW telecom rectifiers and server CRPS power supplies operating at 100–200 kHz. IC Role / Device Role / Timing Role: High-side switch in LLC resonant or hard-switched forward converters handling 400–560 V DC bus. Use Value: 0.28 Ω R_DS(on) and 78 nC Q_g reduce total losses below 3.5 W at 12 A, improving system efficiency to >95% at full load.	Use Scenario: DC-DC boost stage and inverter bridge in string-level solar inverters (1–5 kW). IC Role / Device Role / Timing Role: Unidirectional switch in interleaved boost converters and 600 V-class H-bridge legs. Use Value: 102 mJ E_AS rating tolerates inductive kickback from PV array transients without failure, extending field reliability.
Industrial Motor Drives	Fluorescent Ballast Lighting
Use Scenario: Output stage in 0.5–2 kW variable frequency drives for HVAC blowers and pumps. IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET inverter modules driving 3-phase induction motors. Use Value: 15 A continuous current and 150 °C T_J rating sustain 100% torque at elevated ambient temperatures in enclosed cabinets.	Use Scenario: Resonant half-bridge switch in electronic fluorescent lamp (EFL) ballasts operating at 25–50 kHz. IC Role / Device Role / Timing Role: Fast-switching power switch controlling lamp current via series-resonant tank. Use Value: 302–604 ns reverse recovery time and low Q_rr minimize diode conduction loss and voltage ringing during zero-voltage switching transitions.

Server Power Supplies

Photovoltaic Inverters

Use Scenario: Primary-side switching in 1–3 kW telecom rectifiers and server CRPS power supplies operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-side switch in LLC resonant or hard-switched forward converters handling 400–560 V DC bus.

Use Value: 0.28 Ω R_DS(on) and 78 nC Q_g reduce total losses below 3.5 W at 12 A, improving system efficiency to >95% at full load.

Use Scenario: DC-DC boost stage and inverter bridge in string-level solar inverters (1–5 kW).

IC Role / Device Role / Timing Role: Unidirectional switch in interleaved boost converters and 600 V-class H-bridge legs.

Use Value: 102 mJ E_AS rating tolerates inductive kickback from PV array transients without failure, extending field reliability.

Industrial Motor Drives

Fluorescent Ballast Lighting

Use Scenario: Output stage in 0.5–2 kW variable frequency drives for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET inverter modules driving 3-phase induction motors.

Use Value: 15 A continuous current and 150 °C T_J rating sustain 100% torque at elevated ambient temperatures in enclosed cabinets.

Use Scenario: Resonant half-bridge switch in electronic fluorescent lamp (EFL) ballasts operating at 25–50 kHz.

IC Role / Device Role / Timing Role: Fast-switching power switch controlling lamp current via series-resonant tank.

Use Value: 302–604 ns reverse recovery time and low Q_rr minimize diode conduction loss and voltage ringing during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NM60ND	R_DS(on) = 0.32 Ω (max), Q_g = 65 nC, E_AS = 75 mJ, TO-220FP package (lower PD = 110 W)	Lower avalanche robustness and power dissipation limit it to lower-stress PFC and lighting applications	Prefer SIHP15N60E-E3 where 102 mJ E_AS and 180 W PD are required for industrial UPS or welder duty cycles
IXTH15N60L2	R_DS(on) = 0.29 Ω (max), Q_g = 62 nC, E_AS = 120 mJ, TO-247AC package (R_thJC = 0.45 °C/W)	Superior thermal performance but larger footprint; higher cost and layout complexity than TO-220AB	Choose IXTH15N60L2 only when junction temperature must stay <125 °C under sustained 15 A load without forced air cooling

Compared with STP15NM60ND and IXTH15N60L2, the SIHP15N60E-E3 offers the best balance of avalanche ruggedness (102 mJ), thermal capability (0.7 °C/W), and TO-220AB form factor for cost-sensitive 1–2 kW industrial and telecom power designs.

Availability

SIHP15N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, industrial motor drives, and fluorescent ballast lighting requiring stable component supply across multi-year production cycles.

Supply support for SIHP15N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHP15N60E-E3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage switching in telecom, industrial, and renewable energy systems where ruggedness, low loss, and long-term stability are critical.

FAQ

What is the maximum continuous drain current rating for SIHP15N60E-E3 at 100 °C case temperature?

The SIHP15N60E-E3 has a maximum continuous drain current (I_D) of 9.6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package; at T_C = 25 °C, I_D is rated at 15 A. The linear derating factor is 1.4 W/°C, allowing precise thermal margin calculation for heatsink design in the SIHP15N60E-E3 application.

Does SIHP15N60E-E3 have a fully rated avalanche capability, and what is its single-pulse energy limit?

Yes, the SIHP15N60E-E3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 102 mJ, tested per JEDEC JESD24-1. This rating applies under defined conditions: V_DD = 50 V, starting T_J = 25 °C, L = 11.6 mH, R_g = 25 Ω, and I_AS = 4.2 A. This ruggedness makes SIHP15N60E-E3 suitable for PFC and motor drive circuits where inductive energy must be safely absorbed without external protection.

What is the typical gate charge profile of SIHP15N60E-E3, and how does it affect gate driver selection?

The SIHP15N60E-E3 has Q_g = 39–78 nC (typ–max) at V_GS = 10 V, with Q_gs = 11 nC and Q_gd = 17 nC. This profile indicates strong Miller immunity and predictable turn-on timing. For 100 kHz switching, a driver capable of sourcing/sinking ≥1 A peak current is recommended to achieve <50 ns rise/fall times. The low Q_gd/Q_g ratio (≈22%) minimizes sensitivity to dV/dt-induced false turn-on, enhancing reliability in the SIHP15N60E-E3 application.

How does the body diode performance of SIHP15N60E-E3 compare to standard recovery diodes in PFC applications?

The SIHP15N60E-E3 body diode has t_rr = 302–604 ns and Q_rr = 4.0–8.0 μC at I_F = 8 A, dI/dt = 100 A/μs, and T_J = 25 °C. Compared to standard FRDs, this is moderately fast and low-charge, enabling acceptable efficiency in CCM boost PFC. However, for ultra-high-efficiency (>98%) designs, a dedicated SiC Schottky or fast recovery diode remains preferable. The SIHP15N60E-E3 body diode is sufficient for cost-optimized 1–2 kW telecom PSUs where simplicity outweighs marginal loss reduction.

Is SIHP15N60E-E3 compatible with standard TO-220 heatsinks, and what is its thermal resistance from junction to case?

Yes, the SIHP15N60E-E3 uses the industry-standard TO-220AB package with a drain-connected metal tab, making it mechanically and thermally compatible with off-the-shelf TO-220 heatsinks. Its maximum junction-to-case thermal resistance (R_thJC) is 0.7 °C/W, meaning a 126 W power dissipation raises the junction temperature by 88.2 °C above case temperature. Proper mounting pressure, thermal interface material, and heatsink surface flatness are essential to achieve this spec in the SIHP15N60E-E3 application.

SIHP15N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP15N60E-E3 FAQ

1.How can I place an order for SIHP15N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP15N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP15N60E-E3 reliable?

The price and inventory of SIHP15N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP15N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHP15N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP15N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP15N60E-E3?

SIHP15N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP15N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP15N60E-E3?

For technical support, including SIHP15N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP15N60E-E3 requirements.

6.How does Aetrix verify that SIHP15N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP15N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP15N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHP15N60E-E3?

All SIHP15N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP15N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP15N60E-E3 part is unused and in its original packaging.

Return procedure for SIHP15N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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