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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP15N60E-GE3

Name: SIHP15N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP15N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP15N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP15N60E-GE3.pdf

Description:: MOSFET N-CH 600V 15A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP15N60E-GE3 from Vishay Siliconix is a 600 V, 15 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.28 Ω (max) at V_GS = 10 V, Q_g = 78 nC (max), and avalanche-rated E_AS = 102 mJ - designed for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHP15N60E-GE3 datasheet, SIHP15N60E-GE3 pinout, SIHP15N60E-GE3 application, or SIHP15N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, and robust unclamped inductive switching capability in industrial and telecom power systems.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to minimize conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures stable turn-on under standard 10 V gate drive, while the integral body diode supports synchronous rectification and freewheeling in hard-switched topologies.

The device is characterized for operation up to T_J = 150 °C with R_thJC = 0.7 °C/W, enabling high-power density designs. Dynamic parameters-including C_iss = 1350 pF (typ), C_oss = 70 pF (typ), and t_r/t_f = 26/22 ns (typ)-are specified at V_DS = 480 V, ID = 8 A, supporting fast, low-loss transitions in 50–100 kHz SMPS applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input PFC and 480 V DC bus designs with margin
R_DS(on) max @ 10 V	0.28 Ω - enables <1.8 W conduction loss at 8 A continuous drain current
Q_g max	78 nC - reduces gate drive power and enables use with low-current drivers
E_AS	102 mJ - rated for unclamped inductive switching without external snubbers
I_D cont @ T_C = 25 °C	15 A - delivers full rated current with TO-220AB heatsink mounting
R_thJC	0.7 °C/W - allows junction temperature control under 180 W dissipation at case temp ≤ 100 °C
V_GS(th)	2–4 V - ensures reliable turn-on with standard logic-level gate drivers

Pinout & Package

Package: TO-220AB, through-hole, single-channel N-channel MOSFET with isolated tab (drain-connected). Standard lead finish: lead (Pb)-free and halogen-free per SiHP15N60E-GE3 ordering code.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–30 V gate-source bias; requires 10 V for full R_DS(on) specification
D (Drain)	Main current output terminal	Connected to heatsink tab; electrically tied to drain; handles 600 V blocking and 15 A conduction
S (Source)	Reference and return path	Common node for gate drive return and load current return; defines V_GS reference

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	Reduces combined conduction + switching loss - critical for >95 % efficiency PFC stages
Avalanche energy rating (E_AS)	Enables robust operation in inductive switching without external clamping circuits
Ultra-low Q_g (78 nC max)	Lowers gate driver power consumption and simplifies gate drive design
Low C_iss (1350 pF typ)	Minimizes Miller effect and improves dv/dt immunity in high-side configurations
Body diode t_rr = 302–604 ns	Supports moderate-frequency freewheeling with predictable reverse recovery behavior

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 1 kW+ 48 V output telecom rectifiers operating at 70–100 kHz. IC Role / Device Role / Timing Role: High-voltage power switch in active clamp forward or LLC resonant converter primary leg. Use Value: Low R_DS(on) and Q_g reduce thermal stress and improve efficiency over legacy 650 V MOSFETs.	Use Scenario: Boost PFC stage in multi-output server PSUs handling universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Fast-switching boost switch managing 10–15 A peak currents at 65–100 kHz. Use Value: Avalanche rating eliminates need for external RCD snubber, reducing BOM count and board space.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters with 600 V DC bus and 5–10 kW output. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in three-phase inverter bridge upper switches. Use Value: 600 V rating and 102 mJ E_AS support reliable operation during grid fault transients.	Use Scenario: Output stage in 3–7.5 kW variable frequency drives powering HVAC compressors. IC Role / Device Role / Timing Role: Main inverter switch in 2-level topology with 15 kHz PWM carrier. Use Value: TO-220AB package enables direct heatsink mounting and scalable thermal management across power tiers.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 1 kW+ 48 V output telecom rectifiers operating at 70–100 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch in active clamp forward or LLC resonant converter primary leg.

Use Value: Low R_DS(on) and Q_g reduce thermal stress and improve efficiency over legacy 650 V MOSFETs.

Use Scenario: Boost PFC stage in multi-output server PSUs handling universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 10–15 A peak currents at 65–100 kHz.

Use Value: Avalanche rating eliminates need for external RCD snubber, reducing BOM count and board space.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters with 600 V DC bus and 5–10 kW output.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in three-phase inverter bridge upper switches.

Use Value: 600 V rating and 102 mJ E_AS support reliable operation during grid fault transients.

Use Scenario: Output stage in 3–7.5 kW variable frequency drives powering HVAC compressors.

IC Role / Device Role / Timing Role: Main inverter switch in 2-level topology with 15 kHz PWM carrier.

Use Value: TO-220AB package enables direct heatsink mounting and scalable thermal management across power tiers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NM60ND	R_DS(on) = 0.32 Ω (max), Q_g = 85 nC, E_AS = 85 mJ, TO-220FP package	Higher conduction loss and lower avalanche ruggedness; smaller package limits thermal headroom	Prefer SIHP15N60E-GE3 where higher efficiency or transient robustness is required
IXTH15N60L2	R_DS(on) = 0.27 Ω (max), Q_g = 65 nC, E_AS = 120 mJ, TO-247 package	Lower Q_g and higher E_AS, but larger TO-247 footprint and higher cost	Choose SIHP15N60E-GE3 when TO-220AB form factor and cost sensitivity outweigh marginal Q_g advantage

Compared with STP15NM60ND and IXTH15N60L2, SIHP15N60E-GE3 offers optimal balance of R_DS(on), Q_g, and avalanche rating in the TO-220AB footprint-making it preferred for cost-constrained, thermally demanding 600 V power conversion where layout space is fixed.

Availability

SIHP15N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply and long-term industrial availability.

Supply support for SIHP15N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHP15N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-voltage switch-mode power conversion in industrial, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHP15N60E-GE3 at 100 °C case temperature?

The SIHP15N60E-GE3 has a continuous drain current rating of 9.6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within its R_thJC = 0.7 °C/W thermal resistance envelope. The SIHP15N60E-GE3 must be mounted on an appropriately sized heatsink to maintain case temperature below this limit under full load.

Does SIHP15N60E-GE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHP15N60E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 102 mJ. The test condition is defined as V_DD = 50 V, starting T_J = 25 °C, L = 11.6 mH, R_g = 25 Ω, and I_AS = 4.2 A. This rating applies to unclamped inductive switching events and is validated per JEDEC JESD24-11. The SIHP15N60E-GE3 does not specify repetitive avalanche capability.

What is the gate-source threshold voltage range for SIHP15N60E-GE3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHP15N60E-GE3 is 2–4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. Because the device is not a logic-level MOSFET, the SIHP15N60E-GE3 requires ≥8 V gate drive to achieve near-minimum R_DS(on); operation below 6 V risks partial turn-on and excessive conduction loss.

Is SIHP15N60E-GE3 suitable for use in PFC boost circuits, and what parameters support that application?

Yes, SIHP15N60E-GE3 is explicitly recommended for power factor correction (PFC) power supplies. Its 600 V V_DS, 0.28 Ω R_DS(on), 78 nC Q_g, and 102 mJ E_AS enable efficient, robust operation in continuous conduction mode (CCM) boost converters. The SIHP15N60E-GE3 datasheet lists "Power factor correction power supplies (PFC)" as a primary application, confirming its suitability for high-line 264 VAC inputs with 400 V DC bus.

What is the body diode forward voltage of SIHP15N60E-GE3, and how does it impact freewheeling performance?

The body diode forward voltage (V_SD) of SIHP15N60E-GE3 is 1.0–1.2 V at I_S = 8 A and T_J = 25 °C. This relatively low drop minimizes conduction loss during freewheeling intervals in flyback or half-bridge topologies. However, its reverse recovery time (t_rr = 302–604 ns) and charge (Q_rr = 4.0–8.0 μC) indicate it is not optimized for high-frequency synchronous rectification - the SIHP15N60E-GE3 is best applied in hard-switched, moderate-frequency freewheeling roles.

SIHP15N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP15N60E-GE3 FAQ

1.How can I place an order for SIHP15N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP15N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP15N60E-GE3 reliable?

The price and inventory of SIHP15N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP15N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP15N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP15N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP15N60E-GE3?

SIHP15N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP15N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP15N60E-GE3?

For technical support, including SIHP15N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP15N60E-GE3 requirements.

6.How does Aetrix verify that SIHP15N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP15N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP15N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP15N60E-GE3?

All SIHP15N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP15N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP15N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP15N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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