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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP15N65E-GE3

Name: SIHP15N65E-GE3
Brand: Vishay Siliconix
SKU: SIHP15N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP15N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP15N65E-GE3.pdf

Description:: MOSFET N-CH 650V 15A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:9,370

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Product details

Overview

SIHP15N65E-GE3 from Vishay Siliconix is a 650 V, 15 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.28 Ω at V_GS = 10 V, Q_g = 96 nC, and avalanche-rated (E_AS = 286 mJ). It delivers low conduction and switching losses for high-efficiency SMPS and PFC stages in telecom and server power supplies.

For engineers reviewing the SIHP15N65E-GE3 datasheet, SIHP15N65E-GE3 pinout, SIHP15N65E-GE3 application, or SIHP15N65E-GE3 equivalent, key selection criteria include its 650 V breakdown rating, 0.28 Ω on-resistance at 10 V gate drive, ultra-low gate charge, avalanche ruggedness, and TO-220AB thermal performance with R_thJC = 0.7 °C/W.

Technical Context

This device uses planar stripe silicon technology optimized for high-voltage hard-switching applications. Its low C_iss (1640 pF) and minimized Q_gd/Q_g ratio (21/96 nC) reduce Miller-induced turn-off delay and improve controllability during fast transitions.

The integral body diode supports freewheeling in flyback and LLC topologies, with t_rr = 325 ns and Q_rr = 4.6 μC at 25 °C - enabling moderate-frequency synchronous rectification replacement where diode recovery stress must be managed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with ≥30 % voltage margin for transient spikes in industrial PFC and solar inverters
R_DS(on) max	0.28 Ω @ V_GS = 10 V - enables <1.8 W conduction loss at 8 A continuous drain current in thermally constrained TO-220AB layouts
Q_g max	96 nC - determines gate driver power requirement (~1.9 mW per MHz at 10 V swing) and influences switching speed control
E_AS	286 mJ - ensures single-pulse unclamped inductive switching survivability in motor drive and welding snubberless designs
R_thJC	0.7 °C/W - allows 34 W power dissipation with ≤24 °C case-to-junction rise, critical for heatsink-limited server PSU modules
t_r/t_f	24/25 ns - defines minimum practical switching period (~200 ns) for >2 MHz operation in resonant converters
V_GS(th)	2–4 V - guarantees reliable turn-on with standard 10 V gate drivers while avoiding false triggering from noise below 2 V

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and 0.7 °C/W junction-to-case thermal resistance. Mounting requires mechanical isolation unless drain is referenced to chassis ground.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level signal; 11 nC Q_gs enables fast turn-on with low-current drivers
D (Drain)	High-side power terminal	Connected to TO-220AB metal tab; electrically tied to drain potential - requires insulation when mounted to heatsink
S (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; carries full load current and body diode reverse recovery charge

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	26.9 Ω·nC - balances conduction and switching loss trade-off for 100–500 kHz SMPS operation
Avalanche energy rating	286 mJ single-pulse - eliminates need for external clamping in inductive load switching circuits
Ultra-low Q_gd	21 nC - reduces Miller plateau duration and improves immunity to dV/dt-induced false turn-on
Low C_iss	1640 pF - minimizes gate drive power and enables stable operation with high-impedance gate resistors
RoHS-compliant & halogen-free	Meets IEC 61249-2-21 and JEDEC J-STD-020 - supports environmentally regulated industrial and telecom deployments

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in 3.3 kW 48 V output telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching element handling 380–400 V DC input, operating at 200 kHz with zero-voltage switching assistance. Use Value: 650 V rating accommodates 400 V bus + 20 % surge; 0.28 Ω R_DS(on) limits conduction loss to <2.2 W at 12 A RMS, reducing heatsink mass by 35 % vs. legacy 1 Ω devices.	Use Scenario: Boost switch in front-end PFC stage of 2 kW server PSU with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch, switching at 65–100 kHz with duty cycle modulation. Use Value: Low Q_g (96 nC) enables efficient gate driving with integrated 1 A controllers; E_AS rating ensures robustness against line transients without snubbers.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switch in string-level MPPT converter for residential solar arrays (600–1000 V DC input). IC Role / Device Role / Timing Role: Hard-switched buck-boost stage operating at 30–50 kHz, managing bidirectional power flow during partial shading events. Use Value: Avalanche rating (286 mJ) protects against inductive kick during rapid MPPT step changes; TO-220AB package simplifies thermal interface to aluminum chassis in compact enclosures.	Use Scenario: Inverter leg switch in 3 kW HVAC compressor drive using six-step commutation. IC Role / Device Role / Timing Role: Main power switch in half-bridge configuration, conducting up to 15 A peak with 100 ns dead-time constraints. Use Value: Body diode t_rr = 325 ns and Q_rr = 4.6 μC minimize shoot-through risk and reduce EMI during freewheeling; R_thJC = 0.7 °C/W sustains 150 °C junction temperature under forced-air cooling.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 3.3 kW 48 V output telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element handling 380–400 V DC input, operating at 200 kHz with zero-voltage switching assistance.

Use Value: 650 V rating accommodates 400 V bus + 20 % surge; 0.28 Ω R_DS(on) limits conduction loss to <2.2 W at 12 A RMS, reducing heatsink mass by 35 % vs. legacy 1 Ω devices.

Use Scenario: Boost switch in front-end PFC stage of 2 kW server PSU with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch, switching at 65–100 kHz with duty cycle modulation.

Use Value: Low Q_g (96 nC) enables efficient gate driving with integrated 1 A controllers; E_AS rating ensures robustness against line transients without snubbers.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switch in string-level MPPT converter for residential solar arrays (600–1000 V DC input).

IC Role / Device Role / Timing Role: Hard-switched buck-boost stage operating at 30–50 kHz, managing bidirectional power flow during partial shading events.

Use Value: Avalanche rating (286 mJ) protects against inductive kick during rapid MPPT step changes; TO-220AB package simplifies thermal interface to aluminum chassis in compact enclosures.

Use Scenario: Inverter leg switch in 3 kW HVAC compressor drive using six-step commutation.

IC Role / Device Role / Timing Role: Main power switch in half-bridge configuration, conducting up to 15 A peak with 100 ns dead-time constraints.

Use Value: Body diode t_rr = 325 ns and Q_rr = 4.6 μC minimize shoot-through risk and reduce EMI during freewheeling; R_thJC = 0.7 °C/W sustains 150 °C junction temperature under forced-air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15N65M2	R_DS(on) = 0.27 Ω, Q_g = 72 nC, TO-220FP package (lower PD = 25 W)	Lower gate charge improves efficiency above 250 kHz but reduced power dissipation limits use in >12 A continuous designs	Prefer STP15N65M2 for space-constrained, high-frequency PFC where thermal headroom permits lower PD
IXTH15N65X2	R_DS(on) = 0.24 Ω, Q_g = 105 nC, TO-247 package (R_thJC = 0.45 °C/W)	Lower on-resistance cuts conduction loss but higher Q_g increases driver loss; TO-247 enables 55 W operation	Select IXTH15N65X2 when >34 W dissipation or <0.5 °C/W thermal resistance is required, accepting larger footprint

Compared with STP15N65M2 and IXTH15N65X2, SIHP15N65E-GE3 offers balanced R_DS(on)/Q_g performance in TO-220AB - delivering optimal thermal efficiency for 10–15 A, 100–200 kHz industrial power stages without requiring TO-247 layout changes or sacrificing avalanche ruggedness.

Availability

SIHP15N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant/halogen-free manufacturing.

Supply support for SIHP15N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFETs, including SIHP15N65E-GE3, are engineered for high-voltage switching in telecom, server, and renewable energy systems - emphasizing avalanche ruggedness, low gate charge, and thermal stability in standard packages.

FAQ

What is the maximum continuous drain current rating for SIHP15N65E-GE3 at 100 °C case temperature?

The SIHP15N65E-GE3 supports 10 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from the 15 A rating at 25 °C reflects thermal limitations of the TO-220AB package, where junction-to-case resistance (0.7 °C/W) and ambient conditions dictate safe operating current. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full load for sustained reliability of the SIHP15N65E-GE3.

Does SIHP15N65E-GE3 have an avalanche-rated specification, and how is it tested?

Yes, SIHP15N65E-GE3 is rated for single-pulse avalanche energy (E_AS) of 286 mJ, tested per JEDEC standard JESD24-1 with V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.5 A. This rating confirms ruggedness against inductive switching transients without external clamping. The SIHP15N65E-GE3 datasheet specifies this as a repetitive rating with pulse width limited by maximum junction temperature, making it suitable for motor drives and welding equipment where unclamped inductive loads occur.

What is the gate threshold voltage range for SIHP15N65E-GE3, and why does it matter for gate drive design?

The gate threshold voltage (V_GS(th)) for SIHP15N65E-GE3 is 2–4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing unintended conduction from noise or leakage currents below 2 V. For robust operation, gate drive must exceed 4 V to guarantee full enhancement across process and temperature variation - a critical consideration in high-noise industrial environments where underspecified gate drive could cause partial turn-on and thermal runaway in the SIHP15N65E-GE3.

How does the body diode performance of SIHP15N65E-GE3 compare to standard FRDs in PFC applications?

The SIHP15N65E-GE3 body diode exhibits t_rr = 325 ns and Q_rr = 4.6 μC at 25 °C, which is slower and higher-charge than dedicated fast recovery diodes (FRDs) but sufficient for discontinuous conduction mode (DCM) PFC where diode conduction is brief. In continuous conduction mode (CCM), the SIHP15N65E-GE3 body diode's recovery characteristics increase switching loss and EMI - so synchronous rectification or external FRD placement is recommended. Its V_SD = 1.2 V at 8 A provides predictable forward drop for loss modeling in the SIHP15N65E-GE3.

Is SIHP15N65E-GE3 compatible with lead-free soldering processes, and what is the peak temperature limit?

Yes, SIHP15N65E-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free reflow per J-STD-020. The datasheet specifies a peak soldering temperature of 300 °C for 10 seconds - matching standard Pb-free reflow profiles. This makes SIHP15N65E-GE3 suitable for modern RoHS-compliant assembly lines without requiring special thermal profiling. The TO-220AB package's thermal mass helps buffer transient heat exposure, preserving die integrity during repeated reflow cycles for the SIHP15N65E-GE3.

SIHP15N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1640 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP15N65E-GE3 FAQ

1.How can I place an order for SIHP15N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP15N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP15N65E-GE3 reliable?

The price and inventory of SIHP15N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP15N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP15N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP15N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP15N65E-GE3?

SIHP15N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP15N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP15N65E-GE3?

For technical support, including SIHP15N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP15N65E-GE3 requirements.

6.How does Aetrix verify that SIHP15N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP15N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP15N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP15N65E-GE3?

All SIHP15N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP15N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP15N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHP15N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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