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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP15N80AEF-GE3

Name: SIHP15N80AEF-GE3
Brand: Vishay Siliconix
SKU: SIHP15N80AEF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP15N80AEF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP15N80AEF-GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHP15N80AEF-GE3 from Vishay Siliconix is an 800 V, 13 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring R_DS(on) = 0.305 Ω at V_GS = 10 V, Q_g = 36 nC (typ), and avalanche-rated E_AS = 28 mJ. It serves as a high-voltage switching element in PFC and main-switch stages of telecom/server SMPS.

For engineers reviewing the SIHP15N80AEF-GE3 datasheet, SIHP15N80AEF-GE3 pinout, SIHP15N80AEF-GE3 application, or SIHP15N80AEF-GE3 equivalent, key selection criteria include its fast body diode (t_rr = 104 ns), low Co(er) = 34 pF, and 0.8 °C/W R_thJC for thermally demanding high-efficiency converters.

Technical Context

This device employs planar stripe silicon technology optimized for high-voltage hard-switching operation. Its gate charge profile (Q_gd/Q_g = 15/36 nC) supports controlled dv/dt during turn-off, while the integral fast-recovery body diode enables synchronous rectification-capable topologies without external diodes.

The MOSFET is characterized for stable operation up to T_J = 150 °C with V_DS temperature coefficient of +0.7 V/°C and R_DS(on) normalized drift ≤ 2.5× from 25 °C to 125 °C, making it suitable for unregulated bus applications where thermal runaway must be avoided.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - Supports 650 V nominal DC bus designs with 23 % margin against transients in telecom/PFC stages
R_DS(on) typ	0.305 Ω at V_GS = 10 V - Enables <1.3 W conduction loss at 6.5 A continuous drain current
Q_g max	54 nC - Determines gate drive power requirement (~1.1 mW per MHz at 10 V swing)
E_AS	28 mJ - Withstands single-pulse inductive energy without failure in unclamped inductive switching tests
t_rr	104 ns - Reduces diode recovery losses and associated EMI in bridge-leg configurations
R_thJC	0.8 °C/W - Allows 156 W dissipation with ≤125 °C case-to-junction rise, enabling compact heatsink design
C_oss	41 pF - Low output capacitance minimizes turn-on switching loss in ZVS or resonant topologies

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting footprint (9.15 mm × 10.25 mm × 4.7 mm), 1.6 mm creepage distance, and Pb-free/halogen-free terminations per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 1128 pF requires robust gate driver with ≥1 A peak sourcing/sinking capability
D (Drain)	High-side power terminal	Internally connected to metal tab; electrically isolated from mounting surface but thermally coupled - requires insulating pad if heatsink is grounded
S (Source)	Power return and reference node	Serves as local ground reference for gate drive; source inductance must be minimized to avoid false turn-on during high di/dt switching

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	10.9 Ω·nC - Balances conduction and switching loss for optimal efficiency in 100–300 kHz SMPS
Avalanche-rated (UIS)	28 mJ single-pulse rating - Eliminates need for external snubbers in flyback or forward converter primary switches
Fast body diode	t_rr = 104 ns, Q_rr = 0.4 μC - Enables quasi-resonant operation and reduces cross-conduction risk in half-bridge phase-shifted topologies
Low Co(er)	34 pF - Improves light-load efficiency in LLC resonant converters by reducing capacitive discharge loss
High dv/dt immunity	100 V/ns rated - Maintains reliable blocking under fast-rising transients common in motor drive inverters

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 1–3 kW at >95 % efficiency. IC Role / Device Role / Timing Role: High-voltage power switch handling 380–400 V DC bus with 100–200 kHz switching frequency. Use Value: Low R_DS(on) and Co(er) reduce both conduction and switching losses, directly improving full-load efficiency and thermal margin.	Use Scenario: Boost PFC stage in 48 V telecom rectifier operating from 85–265 V AC input. IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch managing 800 V blocking and 10–15 A peak currents. Use Value: Fast body diode and low Q_gd enable clean zero-current switching transitions, minimizing EMI and improving THD compliance.
Solar Inverters	Industrial Motor Drives
Use Scenario: DC-link switch in string-level PV inverter MPPT stage interfacing 600–1000 V photovoltaic arrays. IC Role / Device Role / Timing Role: High-reliability HV switch subjected to repetitive lightning-induced surges and wide ambient temperature swings. Use Value: 28 mJ UIS rating and -55 to +150 °C T_J range ensure field reliability without derating in outdoor installations.	Use Scenario: Inverter leg switch in 3-phase 400 V industrial VFD driving induction motors up to 7.5 kW. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 2–16 kHz PWM inverters requiring fast diode recovery and low switching loss. Use Value: 104 ns t_rr and 15 V_GS(th) tolerance prevent shoot-through during commutation, enhancing system safety and lifetime.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 1–3 kW at >95 % efficiency.

IC Role / Device Role / Timing Role: High-voltage power switch handling 380–400 V DC bus with 100–200 kHz switching frequency.

Use Value: Low R_DS(on) and Co(er) reduce both conduction and switching losses, directly improving full-load efficiency and thermal margin.

Use Scenario: Boost PFC stage in 48 V telecom rectifier operating from 85–265 V AC input.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch managing 800 V blocking and 10–15 A peak currents.

Use Value: Fast body diode and low Q_gd enable clean zero-current switching transitions, minimizing EMI and improving THD compliance.

Solar Inverters

Industrial Motor Drives

Use Scenario: DC-link switch in string-level PV inverter MPPT stage interfacing 600–1000 V photovoltaic arrays.

IC Role / Device Role / Timing Role: High-reliability HV switch subjected to repetitive lightning-induced surges and wide ambient temperature swings.

Use Value: 28 mJ UIS rating and -55 to +150 °C T_J range ensure field reliability without derating in outdoor installations.

Use Scenario: Inverter leg switch in 3-phase 400 V industrial VFD driving induction motors up to 7.5 kW.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 2–16 kHz PWM inverters requiring fast diode recovery and low switching loss.

Use Value: 104 ns t_rr and 15 V_GS(th) tolerance prevent shoot-through during commutation, enhancing system safety and lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NM80	R_DS(on) = 0.32 Ω, Q_g = 60 nC, no UIS rating, TO-220FP package	Lacks avalanche ruggedness; higher gate charge increases driver loss	Acceptable only in non-inductive or snubber-protected circuits with relaxed reliability requirements
IXTH15N80L2	R_DS(on) = 0.34 Ω, Q_g = 42 nC, 30 mJ E_AS, TO-247 package	Higher R_DS(on) but superior thermal resistance (R_thJC = 0.45 °C/W); larger footprint	Preferred for >200 W continuous conduction where thermal management dominates over layout space

Compared with STP15NM80 and IXTH15N80L2, the SIHP15N80AEF-GE3 delivers the best balance of low R_DS(on), moderate Q_g, certified avalanche capability, and TO-220AB thermal performance - making it optimal for space-constrained, high-reliability 1–3 kW SMPS designs.

Availability

SIHP15N80AEF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHP15N80AEF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The EF Series - including SIHP15N80AEF-GE3 - was engineered specifically for high-frequency, high-voltage switching in telecom, server, and industrial power conversion, prioritizing low FOM and fast body diode performance.

FAQ

What is the maximum continuous drain current rating for SIHP15N80AEF-GE3 at 100 °C case temperature?

The SIHP15N80AEF-GE3 has a continuous drain current rating of 8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature. The SIHP15N80AEF-GE3 must be mounted on an adequately sized heatsink to maintain this rating under sustained load.

Does SIHP15N80AEF-GE3 have a fully characterized body diode for synchronous rectification use?

Yes, the SIHP15N80AEF-GE3 features a fully characterized fast-recovery body diode with t_rr = 104 ns (typ), Q_rr = 0.4 μC (typ), and V_SD = 1.2 V (typ) at I_S = 6.5 A. These parameters are measured under standardized conditions (T_J = 25 °C, di/dt = 100 A/μs, V_R = 25 V) and confirm suitability for quasi-resonant and synchronous rectification roles in bridge-based topologies. The SIHP15N80AEF-GE3 body diode performance is explicitly validated in the datasheet's "Drain-Source Body Diode Characteristics" section.

What is the gate threshold voltage range for SIHP15N80AEF-GE3, and how does it affect drive circuit design?

The SIHP15N80AEF-GE3 has a gate-source threshold voltage V_GS(th) ranging from 2 V to 4 V at I_D = 250 μA. This relatively narrow window ensures consistent turn-on behavior across temperature and process variation. Drive circuits must supply ≥10 V to achieve the specified R_DS(on) of 0.305 Ω; using 12 V improves noise immunity. The SIHP15N80AEF-GE3 is not a logic-level device and requires a dedicated gate driver capable of sustaining ≥10 V during full-load operation.

Can SIHP15N80AEF-GE3 be used in avalanche mode for protection in inductive load switching?

Yes, the SIHP15N80AEF-GE3 is explicitly rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy E_AS of 28 mJ under defined test conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω). This rating allows the SIHP15N80AEF-GE3 to safely absorb inductive energy during fault events without destruction, eliminating the need for external clamping components in many PFC and flyback applications.

What is the thermal resistance from junction to case (R_thJC) for SIHP15N80AEF-GE3, and why is it critical?

The SIHP15N80AEF-GE3 has a maximum junction-to-case thermal resistance R_thJC of 0.8 °C/W, measured from die to the TO-220AB drain tab. This low value is critical because it directly determines the maximum power dissipation achievable for a given case temperature - e.g., at T_C = 85 °C, the SIHP15N80AEF-GE3 can dissipate up to 81.3 W before reaching T_J = 150 °C. Accurate heatsink design depends entirely on this parameter, as it isolates package conduction from ambient convection effects.

SIHP15N80AEF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1128 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP15N80AEF-GE3 FAQ

1.How can I place an order for SIHP15N80AEF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP15N80AEF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP15N80AEF-GE3 reliable?

The price and inventory of SIHP15N80AEF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP15N80AEF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP15N80AEF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP15N80AEF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP15N80AEF-GE3?

SIHP15N80AEF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP15N80AEF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP15N80AEF-GE3?

For technical support, including SIHP15N80AEF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP15N80AEF-GE3 requirements.

6.How does Aetrix verify that SIHP15N80AEF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP15N80AEF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP15N80AEF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP15N80AEF-GE3?

All SIHP15N80AEF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP15N80AEF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP15N80AEF-GE3 part is unused and in its original packaging.

Return procedure for SIHP15N80AEF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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