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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP15N80AE-GE3

Name: SIHP15N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHP15N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP15N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP15N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 13A TO220AB

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Product details

Overview

SIHP15N80AE-GE3 from Vishay Siliconix is an 800 V, 13 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.304 Ω at V_GS = 10 V, Q_g = 35 nC (typ), and avalanche-rated E_AS = 28 mJ. It delivers low conduction and switching losses for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHP15N80AE-GE3 datasheet, SIHP15N80AE-GE3 pinout, SIHP15N80AE-GE3 application, or SIHP15N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS, 0.304 Ω R_DS(on) at 10 V drive, 53 nC max Q_g, Co(er) = 35 pF, and UIS-rated ruggedness - all validated under TJ = 25 °C and TC = 25 °C conditions.

Technical Context

This device uses planar VDMOS technology with optimized charge balance for high-voltage operation. Its low Co(er) (35 pF) and Coss (49 pF) reduce capacitive switching loss, while the 0.304 Ω R_DS(on) enables efficient conduction at 7.5 A ID with minimal thermal rise.

The MOSFET integrates a fast-recovery body diode (t_rr = 333 ns typ, Q_rr = 3.7 μC) and supports unclamped inductive switching up to 28 mJ. Gate threshold voltage (2–4 V) ensures stable turn-on with standard 10 V gate drivers in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports primary-side switching in 400 V DC bus PFC and telecom rectifier designs without derating.
R_DS(on) typ @ 10 V	0.304 Ω - enables ≤ 1.7 W conduction loss at 7.5 A, reducing heatsink requirements in 1U server PSUs.
Q_g max	53 nC - determines gate driver current demand (≥ 10 mA avg) for 100 ns switching transitions in 100 kHz SMPS.
E_AS	28 mJ - provides single-pulse avalanche ruggedness for reliable operation during output short-circuit or startup transients.
C_oss	49 pF - contributes to low output energy (E_oss = 0.5 × C_oss × V_DS²), critical for ZVS/ZCS resonant converter efficiency.
t_rr	333 ns typ - limits reverse recovery stress on complementary switches in bridge configurations.
R_thJC	0.8 °C/W - allows direct thermal interface to heatsink, supporting 156 W PD at T_C = 25 °C with minimal junction-to-case delta-T.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, 2.54 mm lead pitch, and JEDEC-standard outline. Thermal pad electrically tied to drain for low-inductance heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 0.5 Ω typical gate input resistance minimizes ringing with 9.1 Ω external gate resistor.
D (Drain)	High-side power terminal	Connected to TO-220AB metal tab; carries full load current and must be electrically isolated from heatsink unless referenced to system ground.
S (Source)	Reference node / return path	Serves as local ground reference for gate drive; source inductance must be minimized (< 5 nH) to avoid shoot-through in half-bridge layouts.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	16.1 Ω·nC - balances conduction and switching loss for optimal efficiency across 50–200 kHz PFC operating range.
Low Co(er)	35 pF - reduces stored output capacitance energy by >40% vs. legacy 800 V MOSFETs, enabling higher-frequency operation.
Avalanche energy rating	28 mJ (single pulse) - eliminates need for external snubbers in flyback or LLC transient overload conditions.
Fast body diode	t_rr = 333 ns, Q_rr = 3.7 μC - lowers commutation loss and EMI in synchronous rectification and bidirectional converters.
Pb-free & halogen-free	Meets RoHS 2011/65/EU and Vishay's material categorization per doc# 99912 - supports industrial and telecom environmental compliance.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter for 1 kW 48 V output. IC Role / Device Role / Timing Role: High-voltage power switch handling 380–400 V DC bus, switching at 100–300 kHz with zero-voltage turn-on. Use Value: 0.304 Ω R_DS(on) and 35 nC Q_g enable >95% efficiency at full load while maintaining <90 °C junction temperature.	Use Scenario: Boost switch in 3 kW telecom rectifier with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Critical conduction mode (CRM) PFC switch operating at variable frequency up to 250 kHz. Use Value: Low Co(er) (35 pF) and high dv/dt immunity (100 V/ns) ensure stable operation under wide input voltage and load transients.
Industrial PV Inverter	Induction Heating
Use Scenario: DC-link switch in string inverter MPPT stage feeding 600–1000 V DC bus. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16–20 kHz H-bridge output stage. Use Value: 800 V V_DS rating and 28 mJ E_AS withstand DC-link overvoltage spikes during grid faults without failure.	Use Scenario: Half-bridge switch in 20–50 kHz resonant tank for 5–10 kW induction cooktops. IC Role / Device Role / Timing Role: High-current, high-dv/dt switching element subjected to repetitive 100 A peak currents and 100 V/ns voltage slew. Use Value: 13 A continuous ID at T_C = 25 °C and 0.8 °C/W R_thJC sustain thermal stability under 100% duty cycle burst-mode operation.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter for 1 kW 48 V output.

IC Role / Device Role / Timing Role: High-voltage power switch handling 380–400 V DC bus, switching at 100–300 kHz with zero-voltage turn-on.

Use Value: 0.304 Ω R_DS(on) and 35 nC Q_g enable >95% efficiency at full load while maintaining <90 °C junction temperature.

Use Scenario: Boost switch in 3 kW telecom rectifier with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) PFC switch operating at variable frequency up to 250 kHz.

Use Value: Low Co(er) (35 pF) and high dv/dt immunity (100 V/ns) ensure stable operation under wide input voltage and load transients.

Industrial PV Inverter

Induction Heating

Use Scenario: DC-link switch in string inverter MPPT stage feeding 600–1000 V DC bus.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16–20 kHz H-bridge output stage.

Use Value: 800 V V_DS rating and 28 mJ E_AS withstand DC-link overvoltage spikes during grid faults without failure.

Use Scenario: Half-bridge switch in 20–50 kHz resonant tank for 5–10 kW induction cooktops.

IC Role / Device Role / Timing Role: High-current, high-dv/dt switching element subjected to repetitive 100 A peak currents and 100 V/ns voltage slew.

Use Value: 13 A continuous ID at T_C = 25 °C and 0.8 °C/W R_thJC sustain thermal stability under 100% duty cycle burst-mode operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW15NK80Z	R_DS(on) = 0.33 Ω (typ), Q_g = 55 nC, E_AS = 22 mJ, TO-247 package	Higher R_DS(on) and lower avalanche rating; requires larger heatsink in same layout	Preferred where TO-247 mechanical robustness and higher PD (200 W) justify board space increase
IXTH15N80L2	R_DS(on) = 0.32 Ω (typ), Q_g = 42 nC, E_AS = 30 mJ, TO-247 package	Lower Q_g improves switching efficiency but TO-247 footprint incompatible with TO-220AB PCB	Selected when maximizing 200 kHz+ PFC efficiency outweighs re-layout cost and thermal design changes

Compared with STW15NK80Z and IXTH15N80L2, SIHP15N80AE-GE3 offers the lowest R_DS(on) × Q_g FOM in TO-220AB, enabling compact, thermally efficient 1–3 kW power stages without TO-247 rework - ideal for space-constrained server and telecom modules.

Availability

SIHP15N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHP15N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHP15N80AE-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-voltage switching in server, telecom, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for SIHP15N80AE-GE3 at case temperature of 100 °C?

The SIHP15N80AE-GE3 supports 8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within its 156 W maximum power dissipation limit when properly heatsinked.

Does SIHP15N80AE-GE3 have avalanche capability, and how is it rated?

Yes, SIHP15N80AE-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) capability of 28 mJ. This rating is measured under standardized conditions: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 1.4 A - confirming ruggedness for transient overload protection.

What is the typical gate charge profile of SIHP15N80AE-GE3, and how does it affect driver selection?

The SIHP15N80AE-GE3 has Q_g = 35 nC (typ), Q_gs = 8 nC, and Q_gd = 16 nC at V_GS = 10 V. This profile indicates strong Miller effect control, requiring gate drivers capable of ≥ 10 mA average current to achieve sub-100 ns switching transitions - critical for minimizing overlap loss in hard-switched topologies.

How does the body diode performance of SIHP15N80AE-GE3 compare to standard silicon diodes?

The SIHP15N80AE-GE3 features an integrated fast-recovery body diode with t_rr = 333 ns (typ), Q_rr = 3.7 μC, and V_SD = 1.2 V at I_S = 7.5 A. These values outperform standard FRD-based solutions in synchronous rectification, reducing reverse recovery loss and EMI generation in bridge-leg commutation.

Is SIHP15N80AE-GE3 suitable for use in PFC circuits operating above 100 kHz?

Yes, SIHP15N80AE-GE3 is optimized for high-frequency PFC applications, supported by its low Co(er) (35 pF), 53 nC max Q_g, and 100 V/ns dv/dt rating. These parameters enable stable operation up to 250 kHz in critical conduction mode (CRM) and transition mode (TM) PFC controllers without excessive switching loss or voltage overshoot.

SIHP15N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1093 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP15N80AE-GE3 FAQ

1.How can I place an order for SIHP15N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP15N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP15N80AE-GE3 reliable?

The price and inventory of SIHP15N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP15N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP15N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP15N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP15N80AE-GE3?

SIHP15N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP15N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP15N80AE-GE3?

For technical support, including SIHP15N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP15N80AE-GE3 requirements.

6.How does Aetrix verify that SIHP15N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP15N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP15N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP15N80AE-GE3?

All SIHP15N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP15N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP15N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHP15N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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