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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP16N50C-E3

Name: SIHP16N50C-E3
Brand: Vishay Siliconix
SKU: SIHP16N50C-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP16N50C-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP16N50C-E3.pdf

Description:: MOSFET N-CH 500V 16A TO220AB

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Product details

Overview

SIHP16N50C-E3 from Vishay Siliconix is a 500 V, 16 A N-channel enhancement-mode power MOSFET in TO-220AB package, optimized for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It features R_DS(on) = 0.38 Ω (max) at V_GS = 10 V, Q_g = 68 nC (max), and 100 % avalanche tested for ruggedness in inductive load switching.

For engineers reviewing the SIHP16N50C-E3 datasheet, SIHP16N50C-E3 pinout, SIHP16N50C-E3 application, or SIHP16N50C-E3 equivalent, key selection criteria include its 500 V blocking rating, low R_DS(on) × Q_g figure-of-merit, body diode recovery performance (t_rr = 555 ns), and thermal resistance R_thJC = 0.5 °C/W - critical for high-efficiency, thermally constrained 250 W–500 W power converters.

Technical Context

This device employs planar V-groove silicon technology to achieve stable high-voltage operation with tight V_GS(th) distribution (3.0–5.0 V) and low gate leakage (±100 nA). Its dynamic parameters - C_iss = 1900 pF, C_oss = 230 pF, C_rss = 24 pF - support predictable hard-switching behavior in flyback and forward topologies.

The integral body diode is rated for continuous 16 A source-drain current and exhibits V_SD = 1.8 V (T_J = 25 °C, I_S = 10 A), with Q_rr = 5.5 μC and I_RRM = 18 A, enabling reliable unclamped inductive switching without external snubbing in many 50–100 kHz designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for line surges and ringing
R_DS(on) max	0.38 Ω at V_GS = 10 V - enables ≤ 97 W conduction loss at 16 A DC, suitable for <500 W continuous output
Q_g max	68 nC - determines gate drive power requirement (~0.68 mW per 100 kHz switch cycle at 10 V)
E_AS	320 mJ - withstands single-pulse inductive energy up to 320 mJ without failure (e.g., 16 A × 20 V × 10 μs)
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤125 °C junction rise above case, critical for heatsink-limited designs
t_rr	555 ns - defines minimum dead time needed to avoid shoot-through in half-bridge configurations
I_D cont	16 A at T_C = 25 °C - derates linearly to 10 A at T_C = 100 °C, defining PCB copper area requirements

Pinout & Package

SIHP16N50C-E3 is housed in a TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical leadform, and RoHS-compliant matte tin plating. The package provides 250 W power dissipation capability and is compatible with industry-standard TO-220 heatsinks and mounting hardware.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires ≥25 Ω gate resistor to damp oscillation and limit dI/dt during turn-on
D (Drain)	High-side power terminal	Connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to system ground
S (Source)	Power return and reference	Serves as local ground for gate driver; trace inductance here directly impacts switching stability and EMI

Key Features

Feature	Design Value
Low R_DS(on) × Q_g	25.8 Ω·nC typical - reduces combined conduction + switching losses, improving efficiency in 50–200 kHz SMPS
100 % avalanche tested	Guarantees single-pulse ruggedness to 320 mJ - eliminates need for external clamping in many PFC and flyback applications
Improved t_rr/Q_rr	555 ns / 5.5 μC - lowers diode recovery losses and EMI generation versus legacy 500 V MOSFETs
Enhanced gate charge profile	Q_gd/Q_g = 32 % - yields moderate Miller plateau duration, easing gate driver selection and layout
RoHS-compliant, Pb-free	Meets JEDEC J-STD-609 Category 1a - supports global environmental compliance without derating or process change

Applications

Server PSU Primary Switch	Industrial AC-DC Adapter
Use Scenario: High-efficiency 80 PLUS Titanium 1.2 kW server power supply operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switching FET in primary-side power stage, handling 500 V DC input and delivering 12 V/100 A output via transformer isolation. Use Value: SIHP16N50C-E3's 0.38 Ω R_DS(on) minimizes conduction loss at full load, while its 68 nC Q_g enables clean 100 kHz switching with standard 1 A gate drivers.	Use Scenario: 300 W industrial AC-DC adapter for PLC I/O modules, requiring wide input range (85–265 VAC) and 24 V/12.5 A output. IC Role / Device Role / Timing Role: Primary-side switch in discontinuous conduction mode (DCM) flyback converter, operating up to 130 kHz with variable frequency control. Use Value: SIHP16N50C-E3's 500 V rating accommodates 385 V peak rectified voltage with margin; its 320 mJ E_AS ensures reliability during output short-circuit events.
Motor Drive Inverter Stage	LED Streetlight Driver
Use Scenario: 750 W three-phase inverter for HVAC blower motor, using six-pack discrete MOSFETs in 60 Hz–2 kHz PWM control. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter leg, commutating 16 A RMS phase current at 2 kHz. Use Value: SIHP16N50C-E3's 16 A continuous rating at T_C = 25 °C and 0.5 °C/W R_thJC allow direct bolt-down heatsinking without forced air, reducing system BOM cost.	Use Scenario: Constant-current 150 W LED driver for outdoor street lighting, employing single-stage flyback with PFC. IC Role / Device Role / Timing Role: Integrated switch in quasi-resonant (QR) flyback controller IC, conducting 16 A peak drain current during each switching cycle. Use Value: SIHP16N50C-E3's low Q_gd/Q_g ratio improves QR boundary detection accuracy, while its 1.8 V body diode drop reduces reverse recovery loss in valley-switching operation.

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: High-efficiency 80 PLUS Titanium 1.2 kW server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switching FET in primary-side power stage, handling 500 V DC input and delivering 12 V/100 A output via transformer isolation.

Use Value: SIHP16N50C-E3's 0.38 Ω R_DS(on) minimizes conduction loss at full load, while its 68 nC Q_g enables clean 100 kHz switching with standard 1 A gate drivers.

Use Scenario: 300 W industrial AC-DC adapter for PLC I/O modules, requiring wide input range (85–265 VAC) and 24 V/12.5 A output.

IC Role / Device Role / Timing Role: Primary-side switch in discontinuous conduction mode (DCM) flyback converter, operating up to 130 kHz with variable frequency control.

Use Value: SIHP16N50C-E3's 500 V rating accommodates 385 V peak rectified voltage with margin; its 320 mJ E_AS ensures reliability during output short-circuit events.

Motor Drive Inverter Stage

LED Streetlight Driver

Use Scenario: 750 W three-phase inverter for HVAC blower motor, using six-pack discrete MOSFETs in 60 Hz–2 kHz PWM control.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter leg, commutating 16 A RMS phase current at 2 kHz.

Use Value: SIHP16N50C-E3's 16 A continuous rating at T_C = 25 °C and 0.5 °C/W R_thJC allow direct bolt-down heatsinking without forced air, reducing system BOM cost.

Use Scenario: Constant-current 150 W LED driver for outdoor street lighting, employing single-stage flyback with PFC.

IC Role / Device Role / Timing Role: Integrated switch in quasi-resonant (QR) flyback controller IC, conducting 16 A peak drain current during each switching cycle.

Use Value: SIHP16N50C-E3's low Q_gd/Q_g ratio improves QR boundary detection accuracy, while its 1.8 V body diode drop reduces reverse recovery loss in valley-switching operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF50	R_DS(on) = 0.36 Ω (typ), Q_g = 72 nC, R_thJC = 0.6 °C/W, TO-220FP package	Higher thermal resistance limits power density; slightly higher gate charge increases driver loss	Acceptable where board space permits larger heatsink and gate drive capability exceeds 1 A
IRFP460PBF	R_DS(on) = 0.27 Ω (typ), Q_g = 140 nC, R_thJC = 0.45 °C/W, TO-247 package	Lower R_DS(on) but double Q_g demands stronger gate driver; TO-247 footprint incompatible with TO-220 layout	Only viable with PCB redesign; preferred only when conduction loss dominates and gate drive is robust

Compared with STP16NF50 and IRFP460PBF, SIHP16N50C-E3 offers the best balance of low R_DS(on) × Q_g, proven avalanche ruggedness, and TO-220AB compatibility - making it optimal for cost-sensitive, thermally constrained 300–500 W industrial power supplies without layout changes.

Availability

SIHP16N50C-E3 is available at Aetrix Electronics and suitable for industrial motor drives, server PSUs, and LED streetlight drivers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for SIHP16N50C-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHP16N50C-E3 belongs to Vishay's high-voltage Power MOSFET product line, engineered specifically for rugged, high-efficiency switching in offline AC-DC conversion and industrial power systems up to 500 W.

FAQ

What is the maximum continuous drain current rating for SIHP16N50C-E3 at 100 °C case temperature?

The SIHP16N50C-E3 has a continuous drain current rating of 10 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects linear derating from 16 A at 25 °C, governed by the device's thermal resistance and maximum junction temperature limit of 150 °C. Designers must ensure heatsink design maintains case temperature ≤100 °C under full-load conditions to sustain this current level reliably in the SIHP16N50C-E3.

Does SIHP16N50C-E3 have an integrated body diode, and what are its key recovery parameters?

Yes, SIHP16N50C-E3 includes an integral body diode formed by the MOSFET's inherent p-n junction. Its key recovery parameters are t_rr = 555 ns, Q_rr = 5.5 μC, and I_RRM = 18 A, measured at T_J = 25 °C with dI/dt = 100 A/μs and V_R = 20 V. These values enable predictable recovery behavior in hard-switched topologies and inform dead-time selection in bridge configurations using the SIHP16N50C-E3.

Is SIHP16N50C-E3 pin-compatible with other Vishay 500 V MOSFETs like SiHB16N50C-E3 or SiHF16N50C-E3?

No, SIHP16N50C-E3 is not pin-compatible with SiHB16N50C-E3 or SiHF16N50C-E3. While all three share the same electrical specifications, they differ in package: SIHP16N50C-E3 uses TO-220AB, SiHB16N50C-E3 uses D2PAK (TO-263), and SiHF16N50C-E3 uses TO-220 FULLPAK. Each has distinct pinouts, thermal paths, and PCB footprints - meaning direct substitution requires layout revision. The SIHP16N50C-E3 specifically requires TO-220AB mounting and isolation considerations.

What gate voltage is required to fully enhance SIHP16N50C-E3, and what is its threshold range?

The SIHP16N50C-E3 is fully enhanced at V_GS = 10 V, where R_DS(on) is guaranteed ≤0.38 Ω. Its gate-source threshold voltage V_GS(th) ranges from 3.0 V to 5.0 V (min to max) at I_D = 250 μA, indicating it is a standard-level MOSFET - not logic-level. Reliable switching requires gate drive that sustains ≥10 V during conduction; using 5 V logic signals will result in high R_DS(on) and excessive heating in the SIHP16N50C-E3.

Can SIHP16N50C-E3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHP16N50C-E3 is 100 % avalanche tested and rated for single-pulse avalanche energy E_AS = 320 mJ under specified test conditions (V_DD = 50 V, L = 2.5 mH, R_g = 25 Ω, I_AS = 16 A). This rating validates its ability to absorb inductive energy safely during switching transients or fault conditions without destruction - a key reliability feature for offline SMPS and motor control circuits using the SIHP16N50C-E3.

SIHP16N50C-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP16N50C-E3 FAQ

1.How can I place an order for SIHP16N50C-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP16N50C-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP16N50C-E3 reliable?

The price and inventory of SIHP16N50C-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP16N50C-E3 is usually 5 days.

3.What payment methods are accepted for SIHP16N50C-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP16N50C-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP16N50C-E3?

SIHP16N50C-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP16N50C-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP16N50C-E3?

For technical support, including SIHP16N50C-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP16N50C-E3 requirements.

6.How does Aetrix verify that SIHP16N50C-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP16N50C-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP16N50C-E3 meets industry standards.

7.What is the process for return or replacement of SIHP16N50C-E3?

All SIHP16N50C-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP16N50C-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP16N50C-E3 part is unused and in its original packaging.

Return procedure for SIHP16N50C-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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