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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP17N60D-E3

Name: SIHP17N60D-E3
Brand: Vishay Siliconix
SKU: SIHP17N60D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP17N60D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP17N60D-E3.pdf

Description:: MOSFET N-CH 600V 17A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP17N60D-E3 from Vishay Siliconix is a 600 V, 17 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.340 Ω @ V_GS = 10 V, Q_g = 90 nC, and avalanche-rated (E_AS = 165.6 mJ). It serves as a high-voltage switching element in offline SMPS, induction heating, and motor drive half-bridges.

For engineers reviewing the SIHP17N60D-E3 datasheet, SIHP17N60D-E3 pinout, SIHP17N60D-E3 application, or SIHP17N60D-E3 equivalent, key selection criteria include its 600 V V_DS, low R_DS(on) × Q_g figure-of-merit, body diode ruggedness, and TO-220AB thermal performance (R_thJC = 0.45 °C/W).

Technical Context

This device uses planar vertical DMOS technology optimized for high-voltage switching with fast turn-on/turn-off (t_d(on) = 45 ns max, t_f = 60 ns max) and low capacitive losses (C_iss = 1780 pF typ, C_rss = 15 pF typ). Its gate threshold voltage (V_GS(th) = 3–5 V) ensures reliable enhancement-mode operation with standard 10 V gate drive.

The integrated body diode is rated for repetitive 17 A continuous source current and exhibits t_rr = 950 ns max with Q_rr = 15 μC, supporting hard-switched topologies where diode recovery behavior critically impacts EMI and loss. Avalanche capability (E_AS = 165.6 mJ) enables robust unclamped inductive switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC mains-derived DC bus with margin for transient overvoltage
R_DS(on) max @ 10 V	0.340 Ω - limits conduction loss to ≤ 98 W at 17 A, enabling compact heatsinking
Q_g max	90 nC - determines gate driver power requirement and switching speed trade-off
E_AS	165.6 mJ - allows safe single-pulse inductive energy absorption without failure
R_thJC	0.45 °C/W - enables 277.8 W power dissipation with ≤ 125 °C case-to-junction rise
t_rr max	950 ns - defines minimum dead-time needed to avoid shoot-through in bridge configurations

Pinout & Package

Package: TO-220AB, through-hole, isolated tab (drain-connected), 3-pin configuration with industry-standard footprint and thermal mounting via case screw.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance (C_iss) dominates gate charge timing
D (Drain)	High-side power terminal	Connected to heat sink via isolated tab; carries full load current and withstands 600 V transients
S (Source)	Power return / reference node	Common return for gate drive and load current; body diode anode is internally tied here

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	30.6 Ω·nC - improves efficiency in high-frequency SMPS by balancing conduction and switching loss
Avalanche energy rating	165.6 mJ - eliminates need for external snubbers in inductive load switching
High body diode ruggedness	Rated IS = 17 A continuous - supports synchronous rectification and bidirectional current in motor drives
Fast switching with low C_rss	C_rss = 15 pF typ - reduces Miller-induced turn-on risk and improves dV/dt immunity (24 V/ns)

Applications

Industrial Motor Drives	Induction Heating Systems
Use Scenario: Half-bridge inverter driving 3-phase PMSM or induction motor up to 2 kW. IC Role / Device Role / Timing Role: High-side/low-side switching element with body diode conducting freewheeling current during PWM off-time. Use Value: R_DS(on) = 0.340 Ω minimizes I²R loss at 17 A peak; t_rr = 950 ns enables precise dead-time control to prevent cross-conduction.	Use Scenario: Resonant inverter stage in domestic induction cooktops operating at 20–50 kHz. IC Role / Device Role / Timing Role: Main switching transistor in series-resonant tank, handling high di/dt and reverse recovery stress. Use Value: E_AS = 165.6 mJ absorbs energy from unclamped inductive flyback; low C_oss = 140 pF aids ZVS initiation.
Offline Switch-Mode Power Supplies	Welding Equipment
Use Scenario: Primary-side switch in 300–500 W flyback or LLC resonant converter for industrial power supplies. IC Role / Device Role / Timing Role: High-voltage switching device turning on/off 400 V DC bus under PWM control. Use Value: V_DS = 600 V provides 50% overvoltage margin vs. 400 V rectified mains; Q_g = 90 nC enables stable gate drive with <1 W driver loss.	Use Scenario: Inverter output stage in IGBT-assisted or all-MOSFET arc welding inverters (1–3 kVA). IC Role / Device Role / Timing Role: Hard-switched power switch managing pulsed 48 A peak currents and high thermal cycling. Use Value: R_thJC = 0.45 °C/W sustains 277.8 W dissipation; avalanche rating protects against load dump transients during arc interruption.

Industrial Motor Drives

Induction Heating Systems

Use Scenario: Half-bridge inverter driving 3-phase PMSM or induction motor up to 2 kW.

IC Role / Device Role / Timing Role: High-side/low-side switching element with body diode conducting freewheeling current during PWM off-time.

Use Value: R_DS(on) = 0.340 Ω minimizes I²R loss at 17 A peak; t_rr = 950 ns enables precise dead-time control to prevent cross-conduction.

Use Scenario: Resonant inverter stage in domestic induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Main switching transistor in series-resonant tank, handling high di/dt and reverse recovery stress.

Use Value: E_AS = 165.6 mJ absorbs energy from unclamped inductive flyback; low C_oss = 140 pF aids ZVS initiation.

Offline Switch-Mode Power Supplies

Welding Equipment

Use Scenario: Primary-side switch in 300–500 W flyback or LLC resonant converter for industrial power supplies.

IC Role / Device Role / Timing Role: High-voltage switching device turning on/off 400 V DC bus under PWM control.

Use Value: V_DS = 600 V provides 50% overvoltage margin vs. 400 V rectified mains; Q_g = 90 nC enables stable gate drive with <1 W driver loss.

Use Scenario: Inverter output stage in IGBT-assisted or all-MOSFET arc welding inverters (1–3 kVA).

IC Role / Device Role / Timing Role: Hard-switched power switch managing pulsed 48 A peak currents and high thermal cycling.

Use Value: R_thJC = 0.45 °C/W sustains 277.8 W dissipation; avalanche rating protects against load dump transients during arc interruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP17NK60ZFP	600 V, 17 A, R_DS(on) = 0.32 Ω, Q_g = 85 nC, TO-220FP package (full-pack, no isolated tab)	Lacks isolated drain tab; requires insulating washer for heatsink mounting	Prefer when board space is constrained and thermal interface permits non-isolated mounting
IXTH17N60L2	600 V, 17 A, R_DS(on) = 0.30 Ω, Q_g = 72 nC, TO-247AC package, lower R_thJC = 0.35 °C/W	Higher cost, larger footprint, superior thermal performance and lower switching loss	Choose when >277 W dissipation or <45 ns switching is required; not drop-in compatible

Compared with STP17NK60ZFP and IXTH17N60L2, the SIHP17N60D-E3 offers a balanced trade-off of isolation-ready TO-220AB packaging, proven avalanche robustness, and cost-effective performance for mid-power industrial converters-without requiring PCB redesign or thermal interface requalification.

Availability

SIHP17N60D-E3 is available at Aetrix Electronics and suitable for industrial motor drives, induction heating systems, and offline switch-mode power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHP17N60D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The D Series Power MOSFETs-including SIHP17N60D-E3-are engineered for high-efficiency, high-reliability switching in demanding industrial and consumer power conversion, emphasizing low FOM, avalanche survivability, and body diode robustness.

FAQ

What is the maximum continuous drain current rating for SIHP17N60D-E3 at 100 °C case temperature?

The SIHP17N60D-E3 has a continuous drain current rating of 10.7 A at T_C = 100 °C, derated from its 17 A rating at 25 °C. This reflects thermal limitations of the TO-220AB package and must be validated against actual heatsink performance and ambient conditions in the final design. The SIHP17N60D-E3 datasheet specifies linear derating beyond 25 °C using a factor of 2.22 W/°C.

Does SIHP17N60D-E3 have a fully rated avalanche capability, and how is it tested?

Yes, the SIHP17N60D-E3 is fully rated for single-pulse avalanche energy (E_AS = 165.6 mJ), tested per JEDEC JESD24-11 using unclamped inductive switching (UIS) with L = 2.3 mH, I_AS = 12 A, and R_g = 25 Ω. This rating applies across the full operating temperature range and confirms ruggedness in real-world inductive load switching. The SIHP17N60D-E3 specification sheet documents this in Absolute Maximum Ratings Table.

What is the typical gate threshold voltage range for SIHP17N60D-E3, and why does it matter for gate drive design?

The SIHP17N60D-E3 has a gate threshold voltage (V_GS(th)) range of 3–5 V at T_J = 25 °C. This ensures reliable turn-on with standard 10 V gate drivers while preventing accidental conduction from noise or leakage. Designers must ensure gate drive voltage exceeds 5 V to guarantee full enhancement and minimize R_DS(on) variation. The SIHP17N60D-E3's specified V_GS(th) tolerance avoids marginal turn-on in high-noise industrial environments.

Can SIHP17N60D-E3 be used in synchronous rectification topologies?

No-the SIHP17N60D-E3 is a standard-level gate drive MOSFET (V_GS(th) = 3–5 V), not a logic-level or low-threshold device optimized for synchronous rectification. Its body diode forward voltage (V_SD = 1.5 V) and recovery characteristics (t_rr = 950 ns) are designed for hard-switched freewheeling, not high-frequency reverse conduction. For synchronous rectification, dedicated low-V_F, fast-recovery MOSFETs are recommended instead of the SIHP17N60D-E3.

What is the maximum allowable dV/dt rate across SIHP17N60D-E3's drain-source terminals during switching?

The SIHP17N60D-E3 is rated for a maximum drain-source voltage slope (dV/dt) of 24 V/ns at T_J = 125 °C. Exceeding this may cause false turn-on due to Miller capacitance coupling. Designers must limit layout parasitics and select appropriate gate resistance (R_g) to maintain dV/dt within spec-verified in the SIHP17N60D-E3 datasheet's Absolute Maximum Ratings table and confirmed by dynamic test waveforms in Figure 13.

SIHP17N60D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 340mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1780 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 277.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP17N60D-E3 FAQ

1.How can I place an order for SIHP17N60D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP17N60D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP17N60D-E3 reliable?

The price and inventory of SIHP17N60D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP17N60D-E3 is usually 5 days.

3.What payment methods are accepted for SIHP17N60D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP17N60D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP17N60D-E3?

SIHP17N60D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP17N60D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP17N60D-E3?

For technical support, including SIHP17N60D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP17N60D-E3 requirements.

6.How does Aetrix verify that SIHP17N60D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP17N60D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP17N60D-E3 meets industry standards.

7.What is the process for return or replacement of SIHP17N60D-E3?

All SIHP17N60D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP17N60D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP17N60D-E3 part is unused and in its original packaging.

Return procedure for SIHP17N60D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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