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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP17N80AEF-GE3

Name: SIHP17N80AEF-GE3
Brand: Vishay Siliconix
SKU: SIHP17N80AEF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP17N80AEF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP17N80AEF-GE3.pdf

Description:: E SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHP17N80AEF-GE3 from Vishay Siliconix is an 800 V, 15 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.263 Ω R_DS(on) at V_GS = 10 V, 63 nC total gate charge, and fast body diode with 114 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHP17N80AEF-GE3 datasheet, SIHP17N80AEF-GE3 pinout, SIHP17N80AEF-GE3 application, or SIHP17N80AEF-GE3 equivalent, key selection criteria include avalanche energy rating (127 mJ), Co(er) of 39 pF, UIS capability, TJ max of +150 °C, and lead-free/halogen-free compliance per ordering code -GE3.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching applications. Its low Q_g/R_DS(on) figure-of-merit (FOM) and reduced C_oss enable efficient operation in continuous conduction mode (CCM) PFC and resonant LLC topologies.

The integrated fast-recovery body diode supports synchronous rectification and ZVS transitions, with confirmed trr = 114 ns (typ.) and Q_rr = 0.7 μC at IF = 8.5 A, di/dt = 100 A/μs - critical for minimizing commutation loss in bridge-leg configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 400 V AC input PFC stages with 2× safety margin against line surges
R_DS(on) typ	0.263 Ω at V_GS = 10 V - enables <1.9 W conduction loss at 8.5 A DC current
Q_g max	63 nC - determines gate drive power requirement (~1.3 mW per MHz at 10 V swing)
E_AS	127 mJ - rated unclamped inductive switching energy ensures robustness during overload transients
Co(er)	39 pF - low energy-related output capacitance reduces turn-off loss in high-frequency hard-switched converters
trr / Q_rr	114 ns / 0.7 μC - fast body diode recovery minimizes cross-conduction loss in half-bridge phase-shifted topologies
T_J max	+150 °C - allows operation in thermally constrained server PSU modules without derating below 9 A

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting. Thermal resistance R_thJC = 0.7 °C/W enables direct heatsink attachment for high-power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; threshold voltage 2–4 V ensures reliable turn-on with standard PWM controllers
D (Drain)	High-side power terminal	Connected to TO-220AB metal tab; electrically isolated but thermally coupled - requires insulating washer when mounted to common heatsink
S (Source)	Reference node / return path	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	16.6 Ω·nC - directly improves efficiency in 100–300 kHz PFC boost stages by reducing combined switching + conduction loss
Avalanche-rated (UIS)	127 mJ single-pulse - eliminates need for external snubbers in inductive load switching circuits like motor drives and welders
Fast body diode (trr = 114 ns)	Enables use in synchronous rectification and bidirectional power flow without external Schottky parallel devices
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization standard (doc# 99912)
Reduced C_oss (48 pF)	Lowers capacitive turn-off loss and improves zero-voltage switching (ZVS) range in resonant converters

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: High-density 3 kW front-end PFC stage operating at 100 kHz with CCM control. IC Role / Device Role / Timing Role: Main switch in interleaved boost converter; handles 15 A RMS input current with 800 V blocking. Use Value: Low R_DS(on) and Co(er) reduce thermal stress and improve efficiency >96.5% at full load.	Use Scenario: 48 V/50 A telecom rectifier module with active OR-ing and hot-swap capability. IC Role / Device Role / Timing Role: Primary switching element in phase-shifted full-bridge topology; withstands 400 V DC bus transients. Use Value: Avalanche rating and fast body diode support fault clearing and soft-start sequencing without external protection.
PV Inverters	Induction Heating
Use Scenario: DC-link switching in string inverters with 1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter leg; blocks up to 800 V with 150 °C junction rating. Use Value: 150 °C T_J max and low C_oss allow sustained operation under desert ambient conditions without forced air cooling.	Use Scenario: Resonant tank switching in 10–50 kHz induction cooktops with variable frequency control. IC Role / Device Role / Timing Role: Half-bridge switch handling 12 A peak current and 600 V transient spikes during zero-crossing commutation. Use Value: Fast trr and low Q_rr minimize dead-time losses and prevent shoot-through during high-di/dt transitions.

Server Power Supplies

Telecom Rectifiers

Use Scenario: High-density 3 kW front-end PFC stage operating at 100 kHz with CCM control.

IC Role / Device Role / Timing Role: Main switch in interleaved boost converter; handles 15 A RMS input current with 800 V blocking.

Use Value: Low R_DS(on) and Co(er) reduce thermal stress and improve efficiency >96.5% at full load.

Use Scenario: 48 V/50 A telecom rectifier module with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Primary switching element in phase-shifted full-bridge topology; withstands 400 V DC bus transients.

Use Value: Avalanche rating and fast body diode support fault clearing and soft-start sequencing without external protection.

PV Inverters

Induction Heating

Use Scenario: DC-link switching in string inverters with 1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter leg; blocks up to 800 V with 150 °C junction rating.

Use Value: 150 °C T_J max and low C_oss allow sustained operation under desert ambient conditions without forced air cooling.

Use Scenario: Resonant tank switching in 10–50 kHz induction cooktops with variable frequency control.

IC Role / Device Role / Timing Role: Half-bridge switch handling 12 A peak current and 600 V transient spikes during zero-crossing commutation.

Use Value: Fast trr and low Q_rr minimize dead-time losses and prevent shoot-through during high-di/dt transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80Z	R_DS(on) = 0.33 Ω (higher), Q_g = 65 nC, E_AS = 100 mJ, TO-247 package	Higher conduction loss; better thermal mass but larger footprint; no Co(er) spec provided	Prefer SIHP17N80AEF-GE3 where board space and efficiency at 8–12 A are critical
IXTH14N80L2	R_DS(on) = 0.38 Ω, Q_g = 42 nC, trr = 150 ns, TO-247 package, logic-level gate	Lower gate charge but slower diode; higher R_DS(on) increases conduction loss above 6 A	Prefer SIHP17N80AEF-GE3 for hard-switched PFC where diode speed and FOM dominate

Compared with STW20NK80Z and IXTH14N80L2, SIHP17N80AEF-GE3 offers the lowest R_DS(on) × Q_g FOM and fastest body diode among TO-220AB-packaged 800 V MOSFETs, making it optimal for compact, high-efficiency 10–30 kW power systems where thermal density and switching loss are limiting factors.

Availability

SIHP17N80AEF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHP17N80AEF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with focus on high-reliability power and signal conditioning components.

The EF Series - including SIHP17N80AEF-GE3 - was developed specifically for high-voltage, high-efficiency switching applications in server, telecom, and industrial power conversion where low FOM and fast body diode performance are essential.

FAQ

What is the maximum continuous drain current rating for SIHP17N80AEF-GE3 at 100 °C case temperature?

The SIHP17N80AEF-GE3 has a continuous drain current rating of 9 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation without exceeding the +150 °C maximum junction temperature. The SIHP17N80AEF-GE3 must be mounted on an appropriately sized heatsink to maintain this rating under sustained load.

Does SIHP17N80AEF-GE3 have a fully characterized fast body diode, and what are its key recovery parameters?

Yes, the SIHP17N80AEF-GE3 features a fully characterized fast body diode with trr = 114 ns (typ.), Q_rr = 0.7 μC (typ.), and I_RRM = 12 A (max) at T_J = 25 °C. These values are measured under standardized conditions (IF = IS = 8.5 A, di/dt = 100 A/μs, VR = 400 V) and are documented in the "Drain-Source Body Diode Characteristics" section of the datasheet. The SIHP17N80AEF-GE3 body diode enables reliable operation in bidirectional and resonant topologies without external diode supplementation.

Is SIHP17N80AEF-GE3 suitable for avalanche energy testing, and what is its rated single-pulse EAS value?

Yes, the SIHP17N80AEF-GE3 is explicitly rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 127 mJ, tested per condition b: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, I_AS = 3 A. This rating confirms ruggedness under transient overcurrent events such as short-circuit faults in motor drives or PFC stages. The SIHP17N80AEF-GE3 datasheet provides full test circuit details in Figure 15.

What is the gate-source threshold voltage range for SIHP17N80AEF-GE3, and how does it affect drive requirements?

The SIHP17N80AEF-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2 V to 4 V at V_DS = V_GS and I_D = 250 μA. This standard threshold enables compatibility with 10 V gate drivers while ensuring full enhancement at typical PWM controller outputs. The SIHP17N80AEF-GE3 does not require logic-level drive, and operation at V_GS ≥ 10 V guarantees R_DS(on) ≤ 0.305 Ω across temperature and process variation.

How does the Co(er) parameter of SIHP17N80AEF-GE3 impact switching performance in high-frequency converters?

The SIHP17N80AEF-GE3 specifies Co(er) = 39 pF - the energy-related effective output capacitance - which directly determines turn-off loss (E_off ≈ ½ × Co(er) × V_DS² × f_sw). At 640 V and 200 kHz, this yields ~1.6 mJ per switching cycle, significantly lower than comparable MOSFETs with higher Co(er). This makes the SIHP17N80AEF-GE3 especially advantageous in high-frequency PFC and LLC converters where switching loss dominates thermal design.

SIHP17N80AEF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 305mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP17N80AEF-GE3 FAQ

1.How can I place an order for SIHP17N80AEF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP17N80AEF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP17N80AEF-GE3 reliable?

The price and inventory of SIHP17N80AEF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP17N80AEF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP17N80AEF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP17N80AEF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP17N80AEF-GE3?

SIHP17N80AEF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP17N80AEF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP17N80AEF-GE3?

For technical support, including SIHP17N80AEF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP17N80AEF-GE3 requirements.

6.How does Aetrix verify that SIHP17N80AEF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP17N80AEF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP17N80AEF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP17N80AEF-GE3?

All SIHP17N80AEF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP17N80AEF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP17N80AEF-GE3 part is unused and in its original packaging.

Return procedure for SIHP17N80AEF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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