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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP17N80AE-GE3

Name: SIHP17N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHP17N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP17N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP17N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 15A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP17N80AE-GE3 from Vishay Siliconix is an 800 V, 15 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.250 Ω at V_GS = 10 V, Q_g = 41 nC (typ), and 127 mJ single-pulse avalanche energy. It serves as a high-voltage switching element in telecom power supplies and PFC stages.

For engineers reviewing the SIHP17N80AE-GE3 datasheet, SIHP17N80AE-GE3 pinout, SIHP17N80AE-GE3 application, or SIHP17N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS rating, low FOM (R_DS(on) × Q_g), Co(er) = 40 pF, UIS-rated ruggedness, and TO-220AB thermal performance (R_thJC = 0.7 °C/W).

Technical Context

This device uses planar stripe silicon technology optimized for high-voltage hard-switching applications. Its gate charge profile (Q_gs = 8 nC, Q_gd = 18 nC) supports controlled dv/dt during turn-on and reduced Miller-induced shoot-through risk in bridge configurations.

The integral body diode exhibits t_rr = 314 ns (typ) and Q_rr = 4 μC at T_J = 25 °C, enabling reliable operation in discontinuous conduction mode (DCM) PFC and flyback topologies without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 650 V DC bus designs with 23 % voltage margin for transient overvoltage
R_DS(on) typ	0.250 Ω at V_GS = 10 V - enables ≤2.1 W conduction loss at 9.2 A RMS in 100 kHz PFC
Q_g max	62 nC - determines gate driver current requirement (≥0.62 A peak for 100 ns turn-on)
E_AS	127 mJ - withstands unclamped inductive switching events up to L × I²/2 = 127 mJ without failure
R_thJC	0.7 °C/W - allows 179 W dissipation with ≤125 °C case-to-junction rise at steady state
C_o(er)	40 pF - reduces capacitive switching loss in high-frequency hard-switched converters
I_D cont @ T_C=100 °C	10 A - defines maximum continuous current under real heatsink conditions

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 2.54 mm lead pitch, and JEDEC MS-001AC outline. Thermal pad electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≥±30 V absolute V_GS rating and 0.5 Ω typical gate input resistance
D	Drain	Main high-side power terminal; electrically tied to metal tab for low-inductance heatsinking
S	Source	Reference node for gate drive and current sensing; forms return path for load current and body diode conduction

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	10.25 Ω·nC - improves trade-off between conduction and switching loss in 65–100 kHz SMPS
Avalanche-rated (UIS)	127 mJ single-pulse - eliminates need for external clamping in inductive load switching
Reduced C_o(er)	40 pF - cuts output capacitance-related switching loss by ~30 % vs. legacy 800 V MOSFETs
Enhanced body diode Q_rr	4 μC (typ) - lowers reverse recovery loss and EMI in DCM boost PFC stages
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard #99912

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) rectifiers with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 380–400 V DC input, operating at 100 kHz with synchronous rectification on secondary side. Use Value: 800 V rating accommodates 400 V nominal bus + 20 % line surge; R_DS(on) = 0.250 Ω limits conduction loss to <1.8 W at full load.	Use Scenario: Boost PFC stage in -48 V telecom rectifier modules delivering 2.5 kW output. IC Role / Device Role / Timing Role: Fast-switching boost switch in continuous conduction mode (CCM), driven by UCC28070 controller. Use Value: Low Q_gd/Q_g ratio (≈0.44) ensures clean zero-voltage switching transition; 127 mJ E_AS prevents failure during AC line dropout events.
PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to 230 V AC. IC Role / Device Role / Timing Role: High-voltage IGBT replacement in three-level NPC inverter legs, switching at 16 kHz. Use Value: 0.7 °C/W R_thJC enables direct mounting to aluminum heatsink; 100 V/ns dv/dt rating suppresses false triggering in noisy EMI environments.	Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drives using space-vector PWM. IC Role / Device Role / Timing Role: Low-side switching element in 6-pack IGBT/MOSFET module alternative, operating at 8 kHz with regenerative braking. Use Value: Body diode t_rr = 314 ns minimizes commutation loss during regen; 15 A continuous rating supports 125 % overload for 60 s.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) rectifiers with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 380–400 V DC input, operating at 100 kHz with synchronous rectification on secondary side.

Use Value: 800 V rating accommodates 400 V nominal bus + 20 % line surge; R_DS(on) = 0.250 Ω limits conduction loss to <1.8 W at full load.

Use Scenario: Boost PFC stage in -48 V telecom rectifier modules delivering 2.5 kW output.

IC Role / Device Role / Timing Role: Fast-switching boost switch in continuous conduction mode (CCM), driven by UCC28070 controller.

Use Value: Low Q_gd/Q_g ratio (≈0.44) ensures clean zero-voltage switching transition; 127 mJ E_AS prevents failure during AC line dropout events.

PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to 230 V AC.

IC Role / Device Role / Timing Role: High-voltage IGBT replacement in three-level NPC inverter legs, switching at 16 kHz.

Use Value: 0.7 °C/W R_thJC enables direct mounting to aluminum heatsink; 100 V/ns dv/dt rating suppresses false triggering in noisy EMI environments.

Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drives using space-vector PWM.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack IGBT/MOSFET module alternative, operating at 8 kHz with regenerative braking.

Use Value: Body diode t_rr = 314 ns minimizes commutation loss during regen; 15 A continuous rating supports 125 % overload for 60 s.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80Z	800 V, 20 A, R_DS(on) = 0.33 Ω, Q_g = 75 nC, TO-247 package	Higher R_DS(on) increases conduction loss; larger package offers better thermal margin	Prefer when board layout allows TO-247 and higher current headroom is needed over efficiency
IXTH12N80L2	800 V, 12 A, R_DS(on) = 0.42 Ω, Q_g = 32 nC, TO-247 package	Lower Q_g improves switching speed but lower current rating limits power density	Choose when gate drive capability is constrained and 12 A peak suffices for target design

Compared with STW20NK80Z and IXTH12N80L2, SIHP17N80AE-GE3 delivers optimal balance of 15 A current capability, 0.250 Ω R_DS(on), and 41 nC Q_g in compact TO-220AB-making it ideal for space-constrained 1–3 kW industrial and telecom power supplies where thermal interface resistance is tightly controlled.

Availability

SIHP17N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHP17N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The SIHP17N80AE-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-reliability switching in 650–800 V industrial and communications power systems.

FAQ

What is the maximum continuous drain current for SIHP17N80AE-GE3 at 100 °C case temperature?

The SIHP17N80AE-GE3 supports 10 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating from the 15 A rating at 25 °C case temperature and must be applied with appropriate heatsinking to maintain junction temperature ≤150 °C. The SIHP17N80AE-GE3 linear derating factor is 1.4 W/°C above 100 °C.

Does SIHP17N80AE-GE3 have avalanche capability, and how is it rated?

Yes, SIHP17N80AE-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 127 mJ at T_J = 25 °C, tested per JEDEC JESD24-11. This ruggedness eliminates the need for external snubbers in flyback or resonant converters where inductive energy must be safely absorbed. The SIHP17N80AE-GE3 datasheet confirms this rating under defined test conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3 A).

What is the gate threshold voltage range for SIHP17N80AE-GE3, and why does it matter?

The SIHP17N80AE-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2 V to 4 V at I_D = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers while avoiding spurious conduction from noise. This range provides sufficient margin against false triggering in high-dv/dt environments typical of high-voltage SMPS. The SIHP17N80AE-GE3 requires ≥10 V V_GS to achieve its specified R_DS(on) of 0.250 Ω.

How does the body diode performance of SIHP17N80AE-GE3 compare to standard MOSFETs?

The SIHP17N80AE-GE3 features an optimized body diode with t_rr = 314 ns (typ) and Q_rr = 4 μC at T_J = 25 °C, significantly improved over generic 800 V MOSFETs. This reduces reverse recovery loss and associated EMI in PFC and flyback circuits. The SIHP17N80AE-GE3 body diode forward voltage is 1.2 V at I_S = 8.5 A, supporting efficient freewheeling in half-bridge configurations without external diodes.

Is SIHP17N80AE-GE3 compatible with lead-free soldering processes?

Yes, SIHP17N80AE-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free reflow soldering with peak temperature up to 260 °C for 10 seconds, per JEDEC J-STD-020. The device meets Vishay's Green Standard #99912 and RoHS Directive 2011/65/EU. The SIHP17N80AE-GE3 TO-220AB package is designed for robust thermal cycling performance under Pb-free assembly conditions.

SIHP17N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1260 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP17N80AE-GE3 FAQ

1.How can I place an order for SIHP17N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP17N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP17N80AE-GE3 reliable?

The price and inventory of SIHP17N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP17N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP17N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP17N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP17N80AE-GE3?

SIHP17N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP17N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP17N80AE-GE3?

For technical support, including SIHP17N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP17N80AE-GE3 requirements.

6.How does Aetrix verify that SIHP17N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP17N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP17N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP17N80AE-GE3?

All SIHP17N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP17N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP17N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHP17N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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