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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP17N80E-BE3

Name: SIHP17N80E-BE3
Brand: Vishay Siliconix
SKU: SIHP17N80E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP17N80E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP17N80E-BE3.pdf

Description:: MOSFET N-CH 800V 15A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP17N80E-BE3 from Vishay Siliconix is an 800 V, 15 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.25 Ω R_DS(on) at V_GS = 10 V, 122 nC total gate charge, and 353 mJ single-pulse avalanche energy-designed for high-voltage switching in telecom power supplies and solar PV inverters.

For engineers reviewing the SIHP17N80E-BE3 datasheet, SIHP17N80E-BE3 pinout, SIHP17N80E-BE3 application, or SIHP17N80E-BE3 equivalent, key selection criteria include its 800 V V_DS, low Q_g/R_DS(on) figure-of-merit, UIS-rated ruggedness, and TO-220AB thermal performance (R_thJC = 0.6 °C/W).

Technical Context

This MOSFET employs planar silicon technology with optimized gate oxide and drift region design to achieve high voltage blocking while maintaining low conduction loss. Its 0.25 Ω R_DS(on) at 10 V drive enables efficient operation in hard-switched PFC and DC-DC stages up to 480 V bus voltage.

The device integrates a fast-recovery body diode (t_rr = 416 ns typ., Q_rr = 6.4 μC) and supports dV/dt immunity of 70 V/ns at T_J = 125 °C-critical for reliable operation in high-frequency, high-dV/dt industrial motor drives and induction heating circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 400 V AC input rectified systems with 2× safety margin for surge and ringing
R_DS(on) typ.	0.25 Ω @ V_GS = 10 V - enables ≤2.1 W conduction loss at 9 A continuous drain current
Q_g max	122 nC - determines gate driver power requirement and switching speed in 100–300 kHz SMPS designs
E_AS	353 mJ - ensures robustness against unclamped inductive switching events in motor control and welding inverters
R_thJC	0.6 °C/W - allows 208 W power dissipation with ≤125 °C case-to-junction rise, enabling heatsink-limited thermal design
C_iss	2408 pF - impacts Miller effect and gate drive loop stability in high-side configurations
t_rr	416 ns typ. - minimizes commutation loss and EMI in synchronous rectification and bidirectional converters

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and 1.6 mm creepage distance from lead to tab per IEC 60664-1.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires <1.4 Ω gate resistance to limit ringing and ensure t_d(on) ≤ 44 ns
D (Drain)	High-voltage power terminal	Connected to heatsink via isolated tab; carries full load current and withstands 800 V transients
S (Source)	Reference node	Return path for ID and ISD; ties to power ground; defines V_GS reference for gate drive circuitry

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	30.5 Ω·nC - reduces combined switching + conduction loss in high-frequency PFC boost stages
Avalanche-rated (UIS)	353 mJ single-pulse - eliminates need for external snubbers in flyback and resonant LLC primary switches
Fast body diode recovery	t_rr = 416 ns, Q_rr = 6.4 μC - lowers reverse recovery loss by >40% vs. standard 800 V MOSFETs in synchronous rectifiers
High dV/dt immunity	70 V/ns at T_J = 125 °C - prevents false turn-on during high-slew-rate switching in half-bridge topologies
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard #99912

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 3.3 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus, switching at 200 kHz with zero-voltage transition. Use Value: 0.25 Ω R_DS(on) and 122 nC Q_g enable >95% efficiency at full load while surviving 800 V surges per IEC 61000-4-5.	Use Scenario: DC-link switch in string-level 10 kW photovoltaic inverter with transformerless topology. IC Role / Device Role / Timing Role: Unidirectional high-side switch in H-bridge output stage, operating at 16 kHz with 600 V DC input. Use Value: 353 mJ E_AS rating and 70 V/ns dV/dt immunity prevent failure during grid fault-induced overvoltage transients.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with space-vector PWM. IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET in three-phase bridge, conducting 15 A RMS with 100 A peak surge capability. Use Value: Body diode t_rr = 416 ns and Q_rr = 6.4 μC reduce shoot-through risk and EMI generation during commutation.	Use Scenario: Resonant switch in electronic ballast for 400 W HID lamp with frequency sweep ignition. IC Role / Device Role / Timing Role: High-frequency (50–120 kHz) switching element in half-bridge resonant tank, driving lamp ignition pulses. Use Value: Low C_iss (2408 pF) and ultra-low Q_gd (23 nC) support stable zero-current switching across wide frequency range.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 3.3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus, switching at 200 kHz with zero-voltage transition.

Use Value: 0.25 Ω R_DS(on) and 122 nC Q_g enable >95% efficiency at full load while surviving 800 V surges per IEC 61000-4-5.

Use Scenario: DC-link switch in string-level 10 kW photovoltaic inverter with transformerless topology.

IC Role / Device Role / Timing Role: Unidirectional high-side switch in H-bridge output stage, operating at 16 kHz with 600 V DC input.

Use Value: 353 mJ E_AS rating and 70 V/ns dV/dt immunity prevent failure during grid fault-induced overvoltage transients.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with space-vector PWM.

IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET in three-phase bridge, conducting 15 A RMS with 100 A peak surge capability.

Use Value: Body diode t_rr = 416 ns and Q_rr = 6.4 μC reduce shoot-through risk and EMI generation during commutation.

Use Scenario: Resonant switch in electronic ballast for 400 W HID lamp with frequency sweep ignition.

IC Role / Device Role / Timing Role: High-frequency (50–120 kHz) switching element in half-bridge resonant tank, driving lamp ignition pulses.

Use Value: Low C_iss (2408 pF) and ultra-low Q_gd (23 nC) support stable zero-current switching across wide frequency range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW15NK80Z	800 V, 14 A, R_DS(on) = 0.32 Ω, Q_g = 95 nC, TO-247 package	Higher R_DS(on) increases conduction loss; larger TO-247 improves thermal margin but requires PCB rework	Prefer when higher avalanche energy (600 mJ) and lower gate charge outweigh R_DS(on) penalty
IXTH15N80L2	800 V, 15 A, R_DS(on) = 0.28 Ω, Q_g = 105 nC, TO-247 package, logic-level gate	Logic-level drive (V_GS(th) = 2.5–4.5 V) simplifies gate drive but sacrifices some high-V_GS R_DS(on) optimization	Choose when 5 V microcontroller direct drive is required and 0.03 Ω R_DS(on) increase is acceptable

Compared with STW15NK80Z and IXTH15N80L2, SIHP17N80E-BE3 delivers the lowest R_DS(on) × Q_g FOM in TO-220AB form factor-enabling compact, high-efficiency 800 V designs without TO-247 layout changes or logic-level trade-offs.

Availability

SIHP17N80E-BE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHP17N80E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The SIHP17N80E-BE3 belongs to Vishay's E Series Power MOSFET product line, engineered for high-voltage, high-efficiency switching in telecom, industrial, and renewable energy systems where avalanche ruggedness and low gate charge are critical.

FAQ

What is the maximum continuous drain current rating for SIHP17N80E-BE3 at 100 °C case temperature?

The SIHP17N80E-BE3 has a continuous drain current rating of 10 A at T_C = 100 °C, derated linearly from 15 A at 25 °C using a 1.7 W/°C derating factor. This value reflects thermal limits under real-world heatsink conditions and must be validated with actual board-level thermal measurements for the target application.

Does SIHP17N80E-BE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHP17N80E-BE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 353 mJ. The test condition is V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.0 A. This rating applies to single-pulse events and confirms ruggedness in flyback and resonant converter primary switches.

What is the gate threshold voltage range for SIHP17N80E-BE3, and how does it affect drive requirements?

The gate threshold voltage V_GS(th) for SIHP17N80E-BE3 is specified from 2.0 V to 4.0 V at T_J = 25 °C. This range indicates standard-level-not logic-level-drive compatibility; reliable enhancement requires ≥10 V gate drive to achieve the rated 0.25 Ω R_DS(on). Using 5 V drive results in significantly higher on-resistance and conduction loss.

How does the body diode performance of SIHP17N80E-BE3 compare to standard 800 V MOSFETs?

The SIHP17N80E-BE3 body diode offers t_rr = 416 ns (typ.) and Q_rr = 6.4 μC at T_J = 25 °C-approximately 30–40% faster recovery than legacy 800 V MOSFETs. This reduces reverse recovery loss and EMI in hard-switched and quasi-resonant topologies, directly improving system efficiency and thermal margin in the SIHP17N80E-BE3 application.

Is SIHP17N80E-BE3 compatible with lead-free soldering processes, and what is the peak temperature limit?

Yes, SIHP17N80E-BE3 is lead (Pb)-free and halogen-free, qualified for lead-free soldering with a peak temperature of 300 °C for 10 seconds. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements, and no pre-bake is required for standard SMT assembly when stored per Vishay's handling guidelines.

SIHP17N80E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2408 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP17N80E-BE3 FAQ

1.How can I place an order for SIHP17N80E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP17N80E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP17N80E-BE3 reliable?

The price and inventory of SIHP17N80E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP17N80E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP17N80E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP17N80E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP17N80E-BE3?

SIHP17N80E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP17N80E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP17N80E-BE3?

For technical support, including SIHP17N80E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP17N80E-BE3 requirements.

6.How does Aetrix verify that SIHP17N80E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP17N80E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP17N80E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP17N80E-BE3?

All SIHP17N80E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP17N80E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP17N80E-BE3 part is unused and in its original packaging.

Return procedure for SIHP17N80E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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