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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP17N80E-GE3

Name: SIHP17N80E-GE3
Brand: Vishay Siliconix
SKU: SIHP17N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP17N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP17N80E-GE3.pdf

Description:: MOSFET N-CH 800V 15A TO220AB

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Product details

Overview

SIHP17N80E-GE3 from Vishay Siliconix is an 800 V, 15 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.25 Ω (typ.) at V_GS = 10 V, Q_g = 61 nC (typ.), and E_AS = 353 mJ - optimized for high-voltage SMPS and PFC stages in telecom and server power supplies.

For engineers reviewing the SIHP17N80E-GE3 datasheet, SIHP17N80E-GE3 pinout, SIHP17N80E-GE3 application, or SIHP17N80E-GE3 equivalent, key selection criteria include its 800 V V_DS rating, low gate charge for reduced switching loss, avalanche energy rating, and thermal resistance of 0.6 °C/W (junction-to-case), critical for high-reliability industrial and renewable energy inverters.

Technical Context

This device employs a planar high-voltage silicon process with optimized cell layout to achieve low R_DS(on) × Q_g figure-of-merit (FOM) and reduced C_iss (2408 pF). Its body diode exhibits t_rr = 416 ns (typ.) and Q_rr = 6.4 μC, supporting hard-switched topologies with controlled recovery.

The MOSFET operates with V_GS(th) = 2.0–4.0 V, supports ±30 V gate drive, and maintains stable V_DS temperature coefficient of +1.08 V/°C - enabling predictable overvoltage margin across –55 °C to +150 °C junction range without external clamping in properly designed layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 400 V DC bus designs with 2× safety margin for transient surges in PFC and PV inverter DC-link stages
R_DS(on) typ	0.25 Ω @ V_GS = 10 V, I_D = 8.5 A - enables <1.8 W conduction loss at 10 A, reducing heatsink requirements
Q_g max	122 nC - limits gate driver current demand and switching energy, critical for >100 kHz operation in resonant LLC converters
E_AS	353 mJ - rated for unclamped inductive switching stress, allowing robust operation in flyback and forward converter primary switches
R_thJC	0.6 °C/W - enables 15 A continuous operation at T_C ≤ 95 °C with standard TO-220 heatsinking
C_iss	2408 pF @ V_DS = 100 V - low input capacitance reduces Miller effect and improves gate control stability
t_r/t_f	24/26 ns (typ.) - fast edge rates support high-frequency soft-switching while minimizing overlap loss

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 2.54 mm lead pitch, and JEDEC MS-001AC outline. Thermal pad on backside requires mechanical mounting to heatsink via insulating washer or thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level gate drive; ±100 nA leakage at ±20 V ensures low standby power in always-on systems
D (Drain)	High-side power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced
S (Source)	Power return / reference node	Serves as local ground for gate drive loop; low-inductance connection essential to suppress ringing during dV/dt = 70 V/ns transitions

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	30.5 Ω·nC - directly reduces total switching + conduction loss, enabling higher efficiency in 1–3 kW SMPS
Avalanche-rated (UIS)	353 mJ single-pulse - eliminates need for external snubbers in inductive load switching, lowering BOM count
Ultra-low Q_gd/Q_g ratio	23/122 ≈ 19% - minimizes Miller plateau duration, improving controllability during hard commutation
Body diode with low Q_rr	6.4 μC (typ.) - reduces reverse recovery loss and EMI generation in synchronous rectification and bidirectional topologies
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc. 99912 - suitable for green industrial and telecom equipment

Applications

Server Power Supplies	Photovoltaic Inverters
Use Scenario: Primary-side switch in 3.3 kW active clamp forward or LLC resonant converter for 48 V–54 V output server PSUs. IC Role / Device Role / Timing Role: High-voltage, high-current main switching element handling 400 V DC input with 100–300 kHz switching. Use Value: 800 V rating provides 2× margin over 400 V bus; 0.25 Ω R_DS(on) keeps conduction loss under 2.5 W at full load, enabling compact thermal design.	Use Scenario: DC-link switch in string-level PV inverter MPPT stage operating up to 1000 V open-circuit voltage. IC Role / Device Role / Timing Role: High-reliability unidirectional switch in boost converter front-end, exposed to solar array transients. Use Value: 353 mJ UIS rating withstands lightning-induced surges; 70 V/ns dV/dt capability prevents false turn-on in noisy DC-string environments.
Industrial Motor Drives	Fluorescent Ballast Lighting
Use Scenario: Inverter leg switch in 2–5 HP variable frequency drives powering HVAC compressors and pumps. IC Role / Device Role / Timing Role: Half-bridge high-side switch operating with 600 V DC bus and 2–16 kHz PWM modulation. Use Value: Low Q_g (61 nC typ.) reduces gate driver power dissipation; 0.6 °C/W R_thJC allows direct heatsink mounting without thermal interface degradation over 10-year life.	Use Scenario: Resonant switch in electronic ballasts for T5/T8 fluorescent lamps requiring rapid start and dimming. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) primary transistor in series-resonant half-bridge topology. Use Value: Fast t_r/t_f (24/26 ns) enables precise ZVS timing control; low C_oss (81 pF) minimizes dead-time losses and improves lamp ignition reliability.

Server Power Supplies

Photovoltaic Inverters

Use Scenario: Primary-side switch in 3.3 kW active clamp forward or LLC resonant converter for 48 V–54 V output server PSUs.

IC Role / Device Role / Timing Role: High-voltage, high-current main switching element handling 400 V DC input with 100–300 kHz switching.

Use Value: 800 V rating provides 2× margin over 400 V bus; 0.25 Ω R_DS(on) keeps conduction loss under 2.5 W at full load, enabling compact thermal design.

Use Scenario: DC-link switch in string-level PV inverter MPPT stage operating up to 1000 V open-circuit voltage.

IC Role / Device Role / Timing Role: High-reliability unidirectional switch in boost converter front-end, exposed to solar array transients.

Use Value: 353 mJ UIS rating withstands lightning-induced surges; 70 V/ns dV/dt capability prevents false turn-on in noisy DC-string environments.

Industrial Motor Drives

Fluorescent Ballast Lighting

Use Scenario: Inverter leg switch in 2–5 HP variable frequency drives powering HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Half-bridge high-side switch operating with 600 V DC bus and 2–16 kHz PWM modulation.

Use Value: Low Q_g (61 nC typ.) reduces gate driver power dissipation; 0.6 °C/W R_thJC allows direct heatsink mounting without thermal interface degradation over 10-year life.

Use Scenario: Resonant switch in electronic ballasts for T5/T8 fluorescent lamps requiring rapid start and dimming.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) primary transistor in series-resonant half-bridge topology.

Use Value: Fast t_r/t_f (24/26 ns) enables precise ZVS timing control; low C_oss (81 pF) minimizes dead-time losses and improves lamp ignition reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW15NK80ZFP	800 V, 14 A, R_DS(on) = 0.32 Ω, Q_g = 75 nC, TO-247 package	Higher R_DS(on) and larger footprint; lacks documented UIS rating	Preferred where higher peak current (IDM = 56 A) and TO-247 thermal performance are prioritized over gate drive efficiency
IXFH16N80P	800 V, 16 A, R_DS(on) = 0.28 Ω, Q_g = 105 nC, TO-247 package	Higher Q_g increases gate loss; no published E_AS value	Selected when legacy PCB layout uses TO-247 and higher pulsed current capability is required

Compared with STW15NK80ZFP and IXFH16N80P, SIHP17N80E-GE3 delivers lower conduction loss (0.25 Ω vs. ≥0.28 Ω), superior switching efficiency (61 nC Q_g vs. ≥75 nC), and verified avalanche ruggedness - making it optimal for space-constrained, high-efficiency 800 V switch-mode designs where TO-220AB form factor is acceptable.

Availability

SIHP17N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply, long-lifecycle assurance, and RoHS-compliant sourcing.

Supply support for SIHP17N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The E Series Power MOSFETs, including SIHP17N80E-GE3, are engineered for high-voltage switching in telecom, industrial, and renewable energy systems - balancing low R_DS(on), fast switching, and avalanche survivability in cost-sensitive TO-220 packages.

FAQ

What is the maximum continuous drain current for SIHP17N80E-GE3 at 100 °C case temperature?

The SIHP17N80E-GE3 supports 10 A continuous drain current at T_C = 100 °C, derating linearly above that point at 1.7 W/°C. This rating assumes proper heatsinking with R_thJC = 0.6 °C/W and ambient conditions compliant with JEDEC JESD51 standards. At T_C = 25 °C, the limit rises to 15 A.

Does SIHP17N80E-GE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHP17N80E-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 353 mJ. The test condition is V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.0 A - per Vishay document 91988, Rev. C. This confirms ruggedness in flyback and forward converter primary switch applications.

What is the typical gate threshold voltage range for SIHP17N80E-GE3, and how does it affect drive circuit design?

The SIHP17N80E-GE3 has a V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 μA. This wide threshold necessitates gate drive voltages ≥10 V for full enhancement and low R_DS(on). Drive circuits must ensure clean, noise-immune 10–15 V swing with sufficient peak current (>1 A) to charge Q_g = 61 nC rapidly and avoid linear-mode operation.

How does the body diode performance of SIHP17N80E-GE3 compare to standard FRDs in PFC applications?

The SIHP17N80E-GE3 body diode offers t_rr = 416 ns (typ.) and Q_rr = 6.4 μC at T_J = 25 °C, which is slower and higher-Q_rr than dedicated fast recovery diodes. It is not intended for freewheeling conduction but supports limited reverse recovery in hard-switched PFC boost diodes - use only where synchronous rectification is not implemented.

Is SIHP17N80E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHP17N80E-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free wave and reflow soldering per J-STD-020. Peak temperature tolerance is 300 °C for 10 seconds. The TO-220AB package meets IPC/JEDEC J-STD-020D moisture sensitivity level (MSL) 1, eliminating bake requirements prior to assembly.

SIHP17N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2408 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP17N80E-GE3 FAQ

1.How can I place an order for SIHP17N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP17N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP17N80E-GE3 reliable?

The price and inventory of SIHP17N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP17N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP17N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP17N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP17N80E-GE3?

SIHP17N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP17N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP17N80E-GE3?

For technical support, including SIHP17N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP17N80E-GE3 requirements.

6.How does Aetrix verify that SIHP17N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP17N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP17N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP17N80E-GE3?

All SIHP17N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP17N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP17N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHP17N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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