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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP180N60E-GE3

Name: SIHP180N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP180N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP180N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP180N60E-GE3.pdf

Description:: MOSFET N-CH 600V 19A TO220AB

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Product details

Overview

SIHP180N60E-GE3 from Vishay Siliconix is a 600 V, 19 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.155 Ω (typ) at V_GS = 10 V, Q_g = 33 nC (max), and E_AS = 111 mJ avalanche-rated performance. It serves as a primary switching device in high-efficiency PFC and SMPS stages for telecom and server power supplies.

For engineers reviewing the SIHP180N60E-GE3 datasheet, SIHP180N60E-GE3 pinout, SIHP180N60E-GE3 application, or SIHP180N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), Co(er) = 41 pF, and robust 600 V V_DS rating suitable for hard-switched industrial and solar inverter topologies.

Technical Context

This 4th-generation E-series MOSFET employs optimized planar trench technology to reduce conduction and switching losses simultaneously. Its low effective output capacitance (Co(er) = 41 pF) and gate charge profile (Q_gd/Q_g = 11/33 ≈ 33%) support fast, low-loss hard switching up to 100 kHz in continuous conduction mode PFC.

The device integrates an avalanche-rated body diode with t_rr = 282 ns (typ) and Q_rr = 3.6 μC, enabling reliable operation in inductive turn-off and freewheeling conditions without external snubbers in well-designed layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50% voltage margin for surge and ringing
R_DS(on) typ @ 25 °C	0.155 Ω - enables <1.4 W conduction loss at 9.5 A continuous drain current
Q_g max	33 nC - determines gate drive power requirement and switching speed in 10–100 kHz SMPS
E_AS	111 mJ - guarantees single-pulse unclamped inductive switching survivability per JEDEC JESD24-11
C_oss(er)	41 pF - reduces capacitive turn-on loss and improves efficiency in ZVS-capable topologies
t_r/t_f	49/23 ns (typ) - supports clean, low-EMI switching with minimal overlap loss when driven by 9.1 Ω gate resistor
T_J range	–55 to +150 °C - qualified for industrial and telecom base station ambient environments

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and 1.6 mm creepage/clearance from case per note c. Thermal resistance R_thJC = 0.8 °C/W enables 156 W dissipation with adequate heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; threshold V_GS(th) = 3.0–5.0 V ensures stable turn-on under noise
D (Drain)	High-side power terminal	Connected to TO-220 tab; electrically tied to heat sink - requires isolation for floating applications
S (Source)	Reference and return path	Common node for gate drive return and current sensing; low-inductance layout critical for dV/dt immunity

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	5.1 nC·Ω - directly reduces total switching + conduction loss in high-frequency PFC stages
Avalanche energy rating	111 mJ (single pulse) - eliminates need for external clamping in flyback or LLC resonant converter snubber design
Body diode Q_rr	3.6 μC (typ) - minimizes reverse recovery loss and associated EMI in synchronous rectification or bidirectional converters
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912
dv/dt ruggedness	100 V/ns (T_J = 125 °C) - sustains rapid voltage transients during hard switching without false turn-on

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC front-end operating at 65–100 kHz with 48 V–54 V output and 230 V AC input. IC Role / Device Role / Timing Role: Main switching transistor handling 15–20 A peak current in continuous conduction mode. Use Value: Low R_DS(on) and Co(er) reduce thermal stress and improve full-load efficiency beyond 96.5%.	Use Scenario: High-density 48 V telecom rectifier with dual-phase interleaved boost topology. IC Role / Device Role / Timing Role: Primary switch in each phase, driven by dedicated gate driver ICs with matched propagation delay. Use Value: Tight Q_g tolerance (22–33 nC) ensures consistent phase current sharing and thermal balance.
Solar PV Inverter DC-DC Stage	Industrial Motor Drive Inverter Leg
Use Scenario: Isolated DC-DC stage converting 600–1000 V PV string voltage to 400 V DC link. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge configuration with ZVS capability. Use Value: Low C_oss(tr) = 251 pF enables reliable zero-voltage switching across wide load range.	Use Scenario: 3-phase IGBT/MOSFET inverter driving 3–7.5 kW induction motor with field-oriented control. IC Role / Device Role / Timing Role: Upper-leg switching element in 6-pack module replacement for discrete half-bridge implementation. Use Value: Avalanche rating and 150 °C T_J max allow safe operation during motor stall or short-circuit fault events.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC front-end operating at 65–100 kHz with 48 V–54 V output and 230 V AC input.

IC Role / Device Role / Timing Role: Main switching transistor handling 15–20 A peak current in continuous conduction mode.

Use Value: Low R_DS(on) and Co(er) reduce thermal stress and improve full-load efficiency beyond 96.5%.

Use Scenario: High-density 48 V telecom rectifier with dual-phase interleaved boost topology.

IC Role / Device Role / Timing Role: Primary switch in each phase, driven by dedicated gate driver ICs with matched propagation delay.

Use Value: Tight Q_g tolerance (22–33 nC) ensures consistent phase current sharing and thermal balance.

Solar PV Inverter DC-DC Stage

Industrial Motor Drive Inverter Leg

Use Scenario: Isolated DC-DC stage converting 600–1000 V PV string voltage to 400 V DC link.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge configuration with ZVS capability.

Use Value: Low C_oss(tr) = 251 pF enables reliable zero-voltage switching across wide load range.

Use Scenario: 3-phase IGBT/MOSFET inverter driving 3–7.5 kW induction motor with field-oriented control.

IC Role / Device Role / Timing Role: Upper-leg switching element in 6-pack module replacement for discrete half-bridge implementation.

Use Value: Avalanche rating and 150 °C T_J max allow safe operation during motor stall or short-circuit fault events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.065 Ω (lower), Q_g = 65 nC (higher), TO-247 package, no Co(er) spec	Better conduction loss but higher gate drive loss; suited for lower-frequency (<50 kHz), high-current motor drives	Prefer SIHP180N60E-GE3 for PFC where switching loss dominates; STW48N60M2 better for high-current DC-DC with forced air cooling
IXFH30N60P	R_DS(on) = 0.18 Ω (higher), Q_g = 42 nC (higher), TO-247, specified t_rr = 320 ns	Higher switching loss and slower recovery; rated for repetitive UIS only (no single-pulse E_AS value given)	SIHP180N60E-GE3 offers superior FOM and verified avalanche ruggedness for mission-critical telecom power

Compared with STW48N60M2 and IXFH30N60P, SIHP180N60E-GE3 delivers optimal balance of low R_DS(on), moderate Q_g, and documented 111 mJ E_AS, making it preferred for high-frequency, high-reliability PFC and solar DC-DC where both efficiency and fault robustness are critical.

Availability

SIHP180N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIHP180N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability qualification.

The SIHP180N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in 600 V industrial and communications power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHP180N60E-GE3 at 100 °C case temperature?

The SIHP180N60E-GE3 supports 12 A continuous drain current at T_C = 100 °C, derated linearly from 19 A at 25 °C using the 1.25 W/°C derating factor. This rating assumes proper heatsinking and junction temperature maintained below 150 °C. The SIHP180N60E-GE3 datasheet specifies this limit in the Absolute Maximum Ratings table on page 1.

Does SIHP180N60E-GE3 have a fully characterized body diode for synchronous rectification use?

Yes, the SIHP180N60E-GE3 includes full body diode specifications: V_SD = 1.2 V (typ) at I_S = 9.5 A, t_rr = 282 ns (typ), Q_rr = 3.6 μC (typ), and I_RRM = 24 A. These parameters are measured under standardized conditions (T_J = 25 °C, dI/dt = 100 A/μs) and enable accurate loss modeling in bidirectional or synchronous rectifier topologies. The SIHP180N60E-GE3 body diode is integral to the MOSFET structure and shares the same die.

Is SIHP180N60E-GE3 suitable for use in zero-voltage switching (ZVS) circuits?

Yes, the SIHP180N60E-GE3 is well-suited for ZVS applications due to its low effective output capacitance - Co(er) = 41 pF and Co(tr) = 251 pF - which determines resonant tank energy and soft-switching window. Its 600 V V_DS rating and 100 V/ns dv/dt capability further support reliable ZVS operation in phase-shifted full-bridge or LLC converters. The SIHP180N60E-GE3 datasheet confirms these values in the Dynamic Specifications table on page 2.

What is the gate-source leakage specification for SIHP180N60E-GE3 at ±30 V?

The SIHP180N60E-GE3 exhibits gate-source leakage current of ±1 μA maximum at V_GS = ±30 V, as specified in the Static Specifications table (page 2). This value is confirmed under steady-state DC bias and reflects robust gate oxide integrity essential for stable high-side gate drive in high-voltage half-bridge configurations. The SIHP180N60E-GE3 maintains this leakage level across its full operating temperature range.

How does the avalanche energy rating of SIHP180N60E-GE3 compare to typical industry requirements?

The SIHP180N60E-GE3 is rated for 111 mJ single-pulse avalanche energy (E_AS) under defined test conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω), exceeding JEDEC JESD24-11 minimum requirements for 600 V MOSFETs. This validated ruggedness allows the SIHP180N60E-GE3 to withstand transient overvoltage events in PFC and inverter circuits without external protection, reducing BOM cost and board space. The SIHP180N60E-GE3 E_AS value is explicitly listed in the Absolute Maximum Ratings table.

SIHP180N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1085 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP180N60E-GE3 FAQ

1.How can I place an order for SIHP180N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP180N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP180N60E-GE3 reliable?

The price and inventory of SIHP180N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP180N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP180N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP180N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP180N60E-GE3?

SIHP180N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP180N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP180N60E-GE3?

For technical support, including SIHP180N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP180N60E-GE3 requirements.

6.How does Aetrix verify that SIHP180N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP180N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP180N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP180N60E-GE3?

All SIHP180N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP180N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP180N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP180N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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