Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP186N60EF-GE3

Name: SIHP186N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHP186N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP186N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP186N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 18A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,844

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP186N60EF-GE3 from Vishay Siliconix is a 600 V, 18 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.168 Ω R_DS(on) at V_GS = 10 V, 32 nC total gate charge, and fast body diode with 111 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHP186N60EF-GE3 datasheet, SIHP186N60EF-GE3 pinout, SIHP186N60EF-GE3 application, or SIHP186N60EF-GE3 equivalent, this page provides verified device identity, thermal and dynamic parameters, TO-220AB terminal mapping, and validated alternatives for industrial power conversion design.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series silicon technology optimized for hard-switched and resonant topologies. Its low figure-of-merit (R_DS(on) × Q_g = 5.37 Ω·nC) and reduced C_oss(er) (40 pF) minimize switching loss and improve efficiency in continuous conduction mode (CCM) PFC and LLC converters.

The integrated fast-recovery body diode supports synchronous rectification and ZVS operation, with 1.2 V forward voltage at 9.5 A and 10 A peak reverse recovery current. Avalanche-rated (E_AS = 24 mJ), it withstands unclamped inductive transients common in motor drives and welding inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V AC input PFC stages with 50 % safety margin
R_DS(on) typ @ 25 °C	0.168 Ω - Enables ≤ 1.5 W conduction loss at 9.5 A DC output current
Q_g max	32 nC - Determines gate driver power requirement and switching speed in 100–300 kHz designs
C_oss(er)	40 pF - Reduces turn-off energy loss and improves light-load efficiency in resonant converters
t_rr	111 ns - Limits diode reverse recovery stress and EMI generation during hard commutation
E_AS	24 mJ - Withstands single-pulse inductive energy without failure in motor drive H-bridge legs
R_thJC	0.8 °C/W - Enables 156 W dissipation with ≤ 125 °C junction rise over 25 °C case temperature

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Mounting screw hole centered on tab; leads are tin-plated copper, RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 0.7 Ω gate input resistance enables stable Miller clamping with 9.1 Ω external gate resistor
D (Drain)	Main power output / heat sink interface	Connected to tab; requires electrically isolated heatsink mounting; handles full 600 V blocking and 43 A pulsed current
S (Source)	Power return / reference node	Common return for gate drive and load current; forms Kelvin source path for accurate current sensing in high-side configurations

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	5.37 Ω·nC - Directly reduces total switching + conduction loss in 100–200 kHz PFC boost stages
Fast body diode (t_rr = 111 ns)	Enables zero-voltage switching in LLC half-bridge and reduces snubber losses in flyback primary switches
Avalanche energy rating (E_AS = 24 mJ)	Eliminates need for external clamping circuits in inductive load switching applications like welder IGBT gate drivers
Reduced C_oss(er) (40 pF)	Lowers capacitive turn-off loss and improves efficiency at light loads in resonant topologies
Lead (Pb)-free and halogen-free	Complies with IPC/JEDEC J-STD-020D moisture sensitivity level 1 (MSL-1); suitable for lead-free reflow assembly

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Active clamp forward or LLC resonant converter in 3 kW rack-mounted server PSU. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus and 12–15 A RMS current. Use Value: Low Q_g and fast t_rr reduce dead-time loss and enable >96 % efficiency at full load.	Use Scenario: Boost PFC stage in -48 V telecom rectifier feeding distributed power architecture. IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) PFC switch operating at 100–200 kHz. Use Value: 0.168 Ω R_DS(on) limits conduction loss to <1.8 W at 15 A, supporting compact heatsink design.
Solar PV Inverter	Induction Heating
Use Scenario: DC-link switching in two-level string inverter with 600–1000 V DC input. IC Role / Device Role / Timing Role: Half-bridge leg switch in unidirectional DC/AC stage with bidirectional body diode conduction. Use Value: 1.2 V V_SD and 111 ns t_rr minimize reactive power loss and EMI during freewheeling intervals.	Use Scenario: Full-bridge inverter in 10–30 kW induction heating generator operating at 20–100 kHz. IC Role / Device Role / Timing Role: High-frequency switching element subject to repetitive avalanche stress during load mismatch. Use Value: 24 mJ E_AS rating ensures robustness against transient overcurrent without derating.

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or LLC resonant converter in 3 kW rack-mounted server PSU.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus and 12–15 A RMS current.

Use Value: Low Q_g and fast t_rr reduce dead-time loss and enable >96 % efficiency at full load.

Use Scenario: Boost PFC stage in -48 V telecom rectifier feeding distributed power architecture.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) PFC switch operating at 100–200 kHz.

Use Value: 0.168 Ω R_DS(on) limits conduction loss to <1.8 W at 15 A, supporting compact heatsink design.

Solar PV Inverter

Induction Heating

Use Scenario: DC-link switching in two-level string inverter with 600–1000 V DC input.

IC Role / Device Role / Timing Role: Half-bridge leg switch in unidirectional DC/AC stage with bidirectional body diode conduction.

Use Value: 1.2 V V_SD and 111 ns t_rr minimize reactive power loss and EMI during freewheeling intervals.

Use Scenario: Full-bridge inverter in 10–30 kW induction heating generator operating at 20–100 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element subject to repetitive avalanche stress during load mismatch.

Use Value: 24 mJ E_AS rating ensures robustness against transient overcurrent without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.065 Ω (lower), Q_g = 65 nC (higher), TO-247 package	Better conduction loss but higher gate drive loss; requires larger PCB footprint	Prefer when thermal budget allows lower R_DS(on) and layout accommodates TO-247
IXFH30N60P	R_DS(on) = 0.18 Ω (slightly higher), Q_g = 25 nC (lower), TO-247 package	Faster switching due to lower Q_g, but higher conduction loss at >10 A	Prefer for high-frequency (>300 kHz) SMPS where switching loss dominates

Compared with STW48N60M2 and IXFH30N60P, SIHP186N60EF-GE3 offers optimal balance of R_DS(on), Q_g, and package size in TO-220AB-enabling cost-effective, thermally efficient 1–3 kW power stages without TO-247 layout overhead.

Availability

SIHP186N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHP186N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The EF Series MOSFETs-including SIHP186N60EF-GE3-are engineered for high-efficiency, high-reliability power conversion in telecom, server, and industrial systems where low R_DS(on), fast switching, and rugged body diodes are critical.

FAQ

What is the maximum continuous drain current rating for SIHP186N60EF-GE3 at 100 °C case temperature?

The SIHP186N60EF-GE3 has a continuous drain current rating of 12 A at T_C = 100 °C, per its Absolute Maximum Ratings table. This value reflects thermal derating from the 18 A rating at 25 °C case temperature, based on a linear derating factor of 1.25 W/°C and R_thJC = 0.8 °C/W. Engineers must verify actual junction temperature using measured case temperature and power dissipation in their layout.

Does SIHP186N60EF-GE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHP186N60EF-GE3 is avalanche energy rated with E_AS = 24 mJ under single-pulse conditions: V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 1.3 A. This rating applies to repetitive unclamped inductive switching events and is validated per JEDEC JESD24-11. The device does not require external snubbers in properly designed motor drive or welding inverter outputs.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHP186N60EF-GE3, and how does it impact EMI?

The typical reverse recovery charge Q_rr of the SIHP186N60EF-GE3 body diode is 0.6 μC, with a maximum of 1.2 μC at T_J = 25 °C, I_F = 9.5 A, di/dt = 100 A/μs, and V_R = 400 V. Lower Q_rr directly reduces diode turn-off dv/dt and associated high-frequency ringing, resulting in measurably lower conducted EMI in PFC and LLC converters compared to standard MOSFETs with slower diodes.

Can SIHP186N60EF-GE3 be used in a synchronous rectifier configuration?

No, SIHP186N60EF-GE3 is not intended for synchronous rectification. Its body diode is optimized for fast recovery in high-voltage switching roles-not low forward voltage or bidirectional conduction. For synchronous rectification, dedicated low-V_SD MOSFETs (e.g., SiR626DP) or Schottky alternatives are recommended. Using SIHP186N60EF-GE3 as a rectifier would incur excessive 1.2 V forward drop and thermal stress.

What is the gate threshold voltage range for SIHP186N60EF-GE3, and why is it important for gate drive design?

The gate threshold voltage V_GS(th) for SIHP186N60EF-GE3 ranges from 3.0 V to 5.0 V at I_D = 250 μA. This wide range necessitates gate drive voltages ≥ 10 V to ensure full enhancement across process and temperature variation. Driving below 8 V risks incomplete turn-on, increasing R_DS(on) and conduction loss-especially critical in high-current PFC and inverter applications where SIHP186N60EF-GE3 operates.

SIHP186N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 193mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1081 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP186N60EF-GE3 FAQ

1.How can I place an order for SIHP186N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP186N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP186N60EF-GE3 reliable?

The price and inventory of SIHP186N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP186N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP186N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP186N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP186N60EF-GE3?

SIHP186N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP186N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP186N60EF-GE3?

For technical support, including SIHP186N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP186N60EF-GE3 requirements.

6.How does Aetrix verify that SIHP186N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP186N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP186N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP186N60EF-GE3?

All SIHP186N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP186N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP186N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHP186N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …