Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP18N50C-E3

Name: SIHP18N50C-E3
Brand: Vishay Siliconix
SKU: SIHP18N50C-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP18N50C-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP18N50C-E3.pdf

Description:: MOSFET N-CH 500V 18A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:499

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP18N50C-E3 from Vishay Siliconix is a 500 V, 18 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring R_DS(on) = 0.225 Ω at V_GS = 10 V, Q_g = 76 nC, and 100 % avalanche tested for ruggedness in high-voltage switching applications such as AC-DC PFC stages and offline SMPS primary-side switches.

For engineers reviewing the SIHP18N50C-E3 datasheet, SIHP18N50C-E3 pinout, SIHP18N50C-E3 application, or SIHP18N50C-E3 equivalent, key selection criteria include its 500 V V_DS rating, low gate charge for fast switching, robust dv/dt capability (5 V/ns), and integrated body diode with trr = 503 ns - all critical for high-efficiency, high-reliability industrial and telecom power designs.

Technical Context

This device employs planar vertical DMOS technology optimized for high-voltage hard-switching operation. Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures reliable turn-on with standard 10 V gate drivers, while the low C_iss (2451–2942 pF) and C_oss (300–360 pF) support efficient high-frequency operation up to 100 kHz in continuous conduction mode.

The integral body diode is characterized for reverse recovery (Q_rr = 6.7 μC, I_RRM = 30 A), enabling use in freewheeling and synchronous rectification roles where controlled diode turn-off is required. Thermal resistance R_thJC = 0.56 °C/W supports high-power dissipation (P_D = 223 W) when mounted on heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 VAC mains-derived DC bus with 25 % safety margin
R_DS(on) @ 10 V	0.225 Ω - enables <1.5 W conduction loss at 18 A continuous drain current
Q_g max	76 nC - determines gate driver power requirement and switching speed in hard-switched topologies
E_AS	361 mJ - specifies single-pulse avalanche energy handling without failure under inductive fault conditions
trr	503 ns - defines body diode recovery time impacting switching losses and EMI in bridge configurations
R_thJC	0.56 °C/W - allows junction temperature rise of ≤125 °C above case at full 223 W dissipation
I_D @ T_C = 100 °C	11 A - derated continuous current limit for thermal management in enclosed environments

Pinout & Package

SIHP18N50C-E3 is housed in a TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole footprint, and lead (Pb)-free/halogen-free terminations per JEDEC MS-001. The package provides mechanical robustness and thermal performance suitable for manual or automated PCB assembly.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive to fully enhance channel; requires <76 nC charge for full turn-on
D (Drain)	High-side power terminal	Connected to exposed metal tab; electrically tied to drain node - must be insulated from heatsink unless referenced to same potential
S (Source)	Power return / reference node	Serves as common reference for gate drive and current sensing; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	17.1 Ω·nC - balances conduction and switching losses for optimal efficiency in 50–100 kHz SMPS
100 % avalanche rated	361 mJ single-pulse energy - eliminates need for external snubbers in inductive load switching
dv/dt ruggedness	5 V/ns - prevents false turn-on during high dV/dt transients in half-bridge or LLC resonant circuits
Improved trr/Qrr	503 ns / 6.7 μC - reduces diode-related switching losses and EMI compared to legacy 500 V MOSFETs
High peak current capability	I_DM = 72 A - supports surge currents during startup, overload, or short-circuit events

Applications

AC-DC Power Factor Correction (PFC)	Offline Switch-Mode Power Supply (SMPS)
Use Scenario: Boost converter stage in universal-input (90–264 VAC) server PSUs operating at 65–100 kHz. IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer from AC line to high-voltage DC bus. Use Value: 500 V rating accommodates 400 VDC bus with margin; low Q_g minimizes gate driver losses while maintaining ZVS compatibility.	Use Scenario: Primary-side switch in 300–500 W telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side power switch subjected to repetitive 400 V drain spikes and 18 A peak currents. Use Value: 100 % avalanche testing ensures reliability under clamping transient overvoltage; R_thJC = 0.56 °C/W enables compact heatsink design.
Motor Drive Inverter Stage	Industrial DC-DC Converter
Use Scenario: Half-bridge leg in 3 kW HVAC compressor inverter operating at 8–16 kHz PWM frequency. IC Role / Device Role / Timing Role: Low-side switching element conducting motor phase current and freewheeling via body diode. Use Value: trr = 503 ns and Q_rr = 6.7 μC reduce cross-conduction losses and diode-induced voltage overshoot during commutation.	Use Scenario: Isolated forward converter in railway signaling power supply requiring 24 V/20 A output from 75–150 VDC input. IC Role / Device Role / Timing Role: Primary-side switch managing 500 V blocking and 18 A pulsed drain current during duty cycle transitions. Use Value: V_GS(th) = 3.0–5.0 V ensures stable turn-on with standard isolated gate drivers; 223 W P_D supports high-duty-cycle operation.

AC-DC Power Factor Correction (PFC)

Offline Switch-Mode Power Supply (SMPS)

Use Scenario: Boost converter stage in universal-input (90–264 VAC) server PSUs operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer from AC line to high-voltage DC bus.

Use Value: 500 V rating accommodates 400 VDC bus with margin; low Q_g minimizes gate driver losses while maintaining ZVS compatibility.

Use Scenario: Primary-side switch in 300–500 W telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side power switch subjected to repetitive 400 V drain spikes and 18 A peak currents.

Use Value: 100 % avalanche testing ensures reliability under clamping transient overvoltage; R_thJC = 0.56 °C/W enables compact heatsink design.

Motor Drive Inverter Stage

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 3 kW HVAC compressor inverter operating at 8–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switching element conducting motor phase current and freewheeling via body diode.

Use Value: trr = 503 ns and Q_rr = 6.7 μC reduce cross-conduction losses and diode-induced voltage overshoot during commutation.

Use Scenario: Isolated forward converter in railway signaling power supply requiring 24 V/20 A output from 75–150 VDC input.

IC Role / Device Role / Timing Role: Primary-side switch managing 500 V blocking and 18 A pulsed drain current during duty cycle transitions.

Use Value: V_GS(th) = 3.0–5.0 V ensures stable turn-on with standard isolated gate drivers; 223 W P_D supports high-duty-cycle operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N50M5	R_DS(on) = 0.23 Ω, Q_g = 62 nC, TO-220FP package with insulated tab	Lower gate charge reduces driver losses but slightly higher R_DS(on) increases conduction loss at high current	Preferable where gate drive power budget is constrained and thermal interface permits FP variant
IXTH18N50L	R_DS(on) = 0.24 Ω, Q_g = 55 nC, TO-247AC package with non-isolated tab	Higher peak current rating (I_DM = 90 A) and lower C_iss, but requires heatsink isolation	Preferred for higher-power designs needing >223 W dissipation and enhanced avalanche margin

Compared with STP18N50M5 and IXTH18N50L, SIHP18N50C-E3 offers the lowest R_DS(on) × Q_g product among TO-220AB-packaged 500 V MOSFETs, making it optimal for cost-sensitive, space-constrained industrial power supplies where thermal interface simplicity and standardized mounting are priorities.

Availability

SIHP18N50C-E3 is available at Aetrix Electronics and suitable for AC-DC PFC, offline SMPS, and industrial motor drive applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for SIHP18N50C-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SiHP series targets high-voltage power conversion systems demanding ruggedness, low loss, and proven reliability - specifically engineered for industrial, telecom, and computing power supplies operating at 380–450 VDC bus voltages.

FAQ

What is the maximum continuous drain current for SIHP18N50C-E3 at 100 °C case temperature?

The SIHP18N50C-E3 supports 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature. At T_C = 25 °C, the rating increases to 18 A, and the linear derating factor is 1.8 W/°C for power dissipation.

Is SIHP18N50C-E3 suitable for avalanche operation, and what is its rated single-pulse energy?

Yes, SIHP18N50C-E3 is 100 % avalanche tested per datasheet specification, with a rated single-pulse avalanche energy (E_AS) of 361 mJ under defined test conditions (V_DD = 50 V, L = 2.5 mH, R_g = 25 Ω, I_AS = 17 A). This rating confirms its ability to withstand inductive switching faults without degradation, eliminating the need for external protection in many high-voltage applications.

What is the gate threshold voltage range for SIHP18N50C-E3, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for SIHP18N50C-E3 is specified from 3.0 V to 5.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise or leakage. For full enhancement and minimal R_DS(on), V_GS ≥ 10 V is required, and the device is not rated for logic-level (5 V) drive.

Does SIHP18N50C-E3 have an integrated body diode, and what are its key recovery parameters?

Yes, SIHP18N50C-E3 includes an integral body diode inherent to its vertical MOSFET structure. Key recovery parameters include reverse recovery time (t_rr) of 503 ns, reverse recovery charge (Q_rr) of 6.7 μC, and peak reverse recovery current (I_RRM) of 30 A, all measured at T_J = 25 °C with I_F = I_S, di/dt = 100 A/μs, and V_R = 35 V. These values directly impact switching losses in bridge and synchronous rectifier topologies.

What thermal resistance values apply to SIHP18N50C-E3, and how do they influence heatsink selection?

SIHP18N50C-E3 has a maximum junction-to-case thermal resistance (R_thJC) of 0.56 °C/W and a maximum junction-to-ambient value (R_thJA) of 62 °C/W. Since R_thJA is highly dependent on PCB layout and airflow, heatsink design must be based on R_thJC. For example, to maintain T_J ≤ 150 °C at 223 W dissipation with T_C = 80 °C, the heatsink-to-ambient resistance must be ≤ 0.79 °C/W (calculated as (150 − 80)/223).

SIHP18N50C-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 76 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2942 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 223W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP18N50C-E3 FAQ

1.How can I place an order for SIHP18N50C-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP18N50C-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP18N50C-E3 reliable?

The price and inventory of SIHP18N50C-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP18N50C-E3 is usually 5 days.

3.What payment methods are accepted for SIHP18N50C-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP18N50C-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP18N50C-E3?

SIHP18N50C-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP18N50C-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP18N50C-E3?

For technical support, including SIHP18N50C-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP18N50C-E3 requirements.

6.How does Aetrix verify that SIHP18N50C-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP18N50C-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP18N50C-E3 meets industry standards.

7.What is the process for return or replacement of SIHP18N50C-E3?

All SIHP18N50C-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP18N50C-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP18N50C-E3 part is unused and in its original packaging.

Return procedure for SIHP18N50C-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …