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Vishay Siliconix SIHP18N60E-GE3
- Part No.:
- SIHP18N60E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SIHP18N60E-GE3.pdf
- Description:
- MOSFET N-CH 600V 18A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,556
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Product details
Overview
SIHP18N60E-GE3 from Vishay Siliconix is an N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 600 V drain-source voltage, 18 A continuous drain current at TC = 25 °C, and 0.176 Ω typical RDS(on) at VGS = 10 V. It delivers low gate charge (46 nC typ.), high avalanche energy rating (204 mJ), and is optimized for high-efficiency switch-mode power supplies and PFC stages.
For engineers reviewing the SIHP18N60E-GE3 datasheet, SIHP18N60E-GE3 pinout, SIHP18N60E-GE3 application, or SIHP18N60E-GE3 equivalent, key selection criteria include its 600 V blocking capability, 0.176 Ω RDS(on) at 10 V drive, 92 nC max Qg, UIS-rated ruggedness, and TO-220AB thermal performance with RthJC = 0.7 °C/W.
Technical Context
This MOSFET employs planar VDMOS technology with optimized cell layout to minimize figure-of-merit (RDS(on) × Qg). Its low Ciss (1640 pF) and Crss (6 pF) support fast switching with reduced Miller effect, while the integral body diode exhibits 300 ns trr and 4 μC Qrr for controlled recovery in hard-switched topologies.
The device is characterized for operation up to TJ = 150 °C, with positive VDS temperature coefficient (0.72 V/°C) enabling inherent current sharing in parallel configurations. Its dV/dt immunity of 70 V/ns at TJ = 125 °C ensures robustness against parasitic turn-on in high-speed converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports primary-side switching in universal-input 400 V DC bus and 380–400 V PFC outputs |
| RDS(on) typ @ 10 V | 0.176 Ω - enables <1.6 W conduction loss at 9 A ID, critical for thermally constrained SMPS designs |
| Qg max | 92 nC - defines gate drive power requirement; compatible with standard 1–2 A peak gate drivers |
| EAS | 204 mJ - provides unclamped inductive switching margin for flyback and resonant converter snubberless operation |
| RthJC | 0.7 °C/W - allows 179 W PD dissipation with ≤125 °C case-to-ambient ΔT using standard heatsink mounting |
| trr / Qrr | 300 ns / 4 μC - limits reverse recovery losses and EMI in bridge-leg commutation |
| VGS(th) | 2–4 V - ensures reliable turn-on with standard 10 V gate drive while avoiding accidental activation near 0 V |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and 1.6 mm creepage distance per JEDEC outline. Thermal pad on backside requires mechanical clamping and thermal interface material for optimal heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives voltage-controlled signal to modulate channel conductivity; low input capacitance (1640 pF Ciss) reduces driver loading |
| D (Drain) | High-side power terminal | Connected to drain metallization and package tab; electrically tied to heatsink - requires isolation if heatsink is grounded |
| S (Source) | Reference node & current return | Serves as common reference for gate drive and current sensing; body diode anode is internally connected here |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | Reduces combined conduction + switching loss - critical for >100 kHz PFC and LLC designs |
| Avalanche-rated (UIS) | Withstands repetitive unclamped inductive energy up to 204 mJ without degradation - eliminates need for external snubbers |
| Low Crss (6 pF) | Minimizes Miller feedback during dV/dt transitions - improves noise immunity and enables faster turn-off |
| Enhanced body diode softness | 300 ns trr with 26 A IRRM supports ZVS/ZCS transition in phase-shifted full-bridge and active clamp topologies |
| Pb-free & Halogen-free | Complies with RoHS 2011/65/EU and Vishay's "Green" material categorization (doc. 99912) |
Applications
| Server Power Supplies | Photovoltaic Inverters |
|---|---|
Use Scenario: Primary-side switching in 3.3 kW telecom rectifiers and dual-stage server PSUs with active PFC + LLC resonant conversion. IC Role / Device Role / Timing Role: High-voltage N-channel switch in boost PFC and asymmetrical half-bridge output stage. Use Value: 0.176 Ω RDS(on) and 92 nC Qg enable >96% efficiency at full load while maintaining thermal margin below 105 °C junction. | Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: 600 V hard-switched IGBT replacement in three-phase inverter legs and bidirectional DC-DC isolation stages. Use Value: 204 mJ EAS rating withstands DC-link transients during anti-islanding shutdown; 70 V/ns dV/dt immunity prevents false turn-on during fast bus collapse. |
| Fluorescent Ballasts | Induction Heating |
Use Scenario: Resonant half-bridge control in electronic ballasts driving T5/T8 lamps at 25–60 kHz. IC Role / Device Role / Timing Role: Low-loss switching element in series-resonant tank with zero-voltage switching (ZVS) operation. Use Value: Low Coss (85 pF) and soft-recovery body diode reduce dead-time losses and EMI generation during ZVS transitions. | Use Scenario: Full-bridge inverter stage in domestic and industrial induction cooktops operating at 20–50 kHz. IC Role / Device Role / Timing Role: High-current, high-dV/dt switch handling pulsed 15–25 A loads with rapid polarity reversal. Use Value: 45 A IDM rating and 11 A continuous current at TC = 100 °C sustain burst-mode heating cycles without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP18N60DM6 | 600 V, 0.18 Ω RDS(on), 85 nC Qg, DPAK package, lower RthJC (1.2 °C/W) | Surface-mount alternative with lower profile but higher thermal resistance - requires PCB copper area for heatsinking | Preferred for space-constrained SMT designs where board-level thermal management is feasible |
| IXTH18N60L2 | 600 V, 0.19 Ω RDS(on), 105 nC Qg, TO-247 package, higher PD (278 W) | Higher-power variant with larger die and superior thermal performance - suited for >2 kW continuous operation | Select when system-level thermal budget exceeds 179 W or forced-air cooling is unavailable |
Compared with STP18N60DM6 and IXTH18N60L2, SIHP18N60E-GE3 offers the best balance of low-profile TO-220AB packaging, proven 204 mJ UIS ruggedness, and 0.176 Ω conduction loss - making it ideal for cost-sensitive, medium-power industrial and lighting platforms requiring field-proven reliability.
Availability
SIHP18N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.
Supply support for SIHP18N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The E Series Power MOSFETs, including SIHP18N60E-GE3, were engineered for high-frequency switch-mode power conversion with focus on minimizing RDS(on) × Qg and enhancing avalanche ruggedness in demanding industrial and renewable energy applications.
FAQ
What is the maximum continuous drain current rating for SIHP18N60E-GE3 at 100 °C case temperature?
The SIHP18N60E-GE3 has a continuous drain current rating of 11 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermal design calculations alongside RthJC = 0.7 °C/W to ensure TJ remains ≤150 °C under worst-case ambient and airflow conditions. The SIHP18N60E-GE3 datasheet confirms this value under standard test conditions with VGS = 10 V.
Does SIHP18N60E-GE3 have a fully rated avalanche capability, and what is the test condition?
Yes, SIHP18N60E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 204 mJ. Per the datasheet, this is measured at VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, and IAS = 3.8 A. The SIHP18N60E-GE3 is qualified for repetitive UIS events within safe operating area limits defined by its SOA curve.
What is the gate threshold voltage range for SIHP18N60E-GE3, and how does it affect drive circuit design?
The gate-source threshold voltage (VGS(th)) for SIHP18N60E-GE3 is specified from 2 V to 4 V at ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while preventing unintended conduction near 0 V. For robust operation, the SIHP18N60E-GE3 requires ≥6 V minimum gate voltage to achieve usable RDS(on); drive circuits must maintain sufficient noise margin above 4 V to avoid marginal switching in noisy environments.
Can SIHP18N60E-GE3 be used in parallel configurations, and what design considerations apply?
Yes, SIHP18N60E-GE3 supports paralleling due to its positive VDS temperature coefficient (0.72 V/°C), which promotes current sharing as junction temperature rises. To ensure balanced operation, use matched gate resistors, symmetrical PCB layout, and individual source resistors for current sensing. Thermal coupling between devices must be minimized, and the SIHP18N60E-GE3 datasheet recommends verifying sharing under worst-case load and temperature conditions before final validation.
What is the typical reverse recovery charge (Qrr) of the body diode in SIHP18N60E-GE3, and why does it matter in bridge topologies?
The typical reverse recovery charge (Qrr) of the SIHP18N60E-GE3 body diode is 4 μC, measured at TJ = 25 °C, IF = IS = 9 A, dI/dt = 100 A/μs, and VR = 25 V. In bridge configurations, low Qrr minimizes switching losses and voltage overshoot during commutation, directly improving efficiency and reducing EMI. The SIHP18N60E-GE3's 4 μC Qrr contributes to its suitability in hard-switched full-bridge and synchronous rectifier applications where body diode conduction occurs.
SIHP18N60E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 202mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 92 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1640 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 179W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SIHP18N60E-GE3 FAQ
1.How can I place an order for SIHP18N60E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHP18N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHP18N60E-GE3 reliable?
The price and inventory of SIHP18N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP18N60E-GE3 is usually 5 days.
3.What payment methods are accepted for SIHP18N60E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP18N60E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHP18N60E-GE3?
SIHP18N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHP18N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHP18N60E-GE3?
For technical support, including SIHP18N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP18N60E-GE3 requirements.
6.How does Aetrix verify that SIHP18N60E-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHP18N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP18N60E-GE3 meets industry standards.
7.What is the process for return or replacement of SIHP18N60E-GE3?
All SIHP18N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP18N60E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHP18N60E-GE3 part is unused and in its original packaging.
Return procedure for SIHP18N60E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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