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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP20N50E-GE3

Name: SIHP20N50E-GE3
Brand: Vishay Siliconix
SKU: SIHP20N50E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP20N50E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP20N50E-GE3.pdf

Description:: MOSFET N-CH 500V 19A TO220AB

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Product details

Overview

SIHP20N50E-GE3 from Vishay Siliconix is a 500 V, 19 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.184 Ω at V_GS = 10 V, Q_g = 92 nC, and avalanche-rated (E_AS = 204 mJ). It serves as a primary switching device in hard-switched PFC and flyback converters for ATX power supplies and LED lighting.

For engineers reviewing the SIHP20N50E-GE3 datasheet, SIHP20N50E-GE3 pinout, SIHP20N50E-GE3 application, or SIHP20N50E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), high dV/dt immunity (70 V/ns), and robust UIS capability-critical for reliable operation in high-voltage SMPS topologies.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage hard-switching applications. Its gate charge profile (Q_g = 46–92 nC, Q_gd = 19 nC) supports efficient turn-on/turn-off timing with minimal Miller plateau effects, while C_iss = 1640 pF and C_oss = 87 pF enable predictable snubber design.

The device integrates an intrinsic body diode with t_rr = 293 ns and Q_rr = 4.0 μC, rated for continuous I_S = 19 A and pulsed I_SM = 42 A. Thermal resistance R_thJC = 0.7 °C/W ensures effective heat transfer to heatsinks in high-power-density designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports full bridge and PFC stages operating up to 400 V DC bus with margin
R_DS(on) max @ 25 °C	0.184 Ω - enables ≤ 35 W conduction loss at 19 A, suitable for 200–300 W SMPS
Q_g max	92 nC - determines gate driver current requirement (~1.8 A peak for 50 ns rise time)
E_AS	204 mJ - withstands unclamped inductive switching events without failure
dV/dt rating	70 V/ns - suppresses false turn-on in high-noise, fast-rising voltage environments
T_J range	−55 to +150 °C - qualified for industrial and computing ambient conditions with derating
P_D @ T_C = 25 °C	179 W - requires mechanical heatsinking for sustained 12–19 A operation

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and 1.6 mm creepage/clearance per JEDEC MS-001. Mounting screw hole centered on tab for thermal interface to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; threshold V_GS(th) = 2.0–4.0 V ensures compatibility with standard PWM controllers
D (Drain)	High-side switch node	Connected to drain terminal and metal tab; electrically isolated from mounting surface per package spec
S (Source)	Power return / reference	Serves as common source node for gate drive return path and current sensing; ties to PCB ground plane

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	16.9 Ω·nC - reduces combined switching + conduction losses in 100–500 kHz PFC stages
Avalanche energy rating	204 mJ single-pulse - eliminates need for external clamping in flyback transformer reset circuits
Body diode Q_rr	4.0 μC - minimizes reverse recovery loss and EMI in discontinuous conduction mode (DCM) operation
High dV/dt immunity	70 V/ns - prevents spurious turn-on during fast voltage transients in boost and forward converters
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization standard 99912

Applications

ATX Power Supply PFC Stage	Two-Stage LED Driver
Use Scenario: Boost converter operating in continuous conduction mode (CCM) at 65–100 kHz, rectifying AC line to 400 V DC bus. IC Role / Device Role / Timing Role: Main switching transistor handling full input current; synchronized to controller IC via gate driver. Use Value: Low Q_g and R_DS(on) reduce total losses below 1.2% at 250 W, enabling 80 PLUS Bronze compliance.	Use Scenario: Secondary-side synchronous rectifier or primary-side switch in isolated LED driver with 36–48 V output. IC Role / Device Role / Timing Role: High-side switch in flyback topology; withstands reflected output voltage spikes during demagnetization. Use Value: 500 V rating and 204 mJ E_AS eliminate need for snubber networks, simplifying BOM and improving reliability.
Hard-Switched Forward Converter	Industrial SMPS Auxiliary Supply
Use Scenario: Primary switch in two-switch forward topology powering 12–24 V control rails in PLC and motor drives. IC Role / Device Role / Timing Role: Voltage-controlled power switch driven by isolated gate driver; operates at fixed 100–200 kHz frequency. Use Value: 70 V/ns dV/dt rating prevents false triggering during transformer leakage spike transitions, ensuring stable duty cycle control.	Use Scenario: Standby or auxiliary power supply delivering 5–12 V at ≤5 W for microcontroller and sensor biasing. IC Role / Device Role / Timing Role: Low-duty-cycle switching element in flyback configuration; activated only during system wake-up events. Use Value: Ultra-low I_DSS (≤1 μA at 500 V) minimizes no-load power draw, supporting Energy Star Level VI standby requirements.

ATX Power Supply PFC Stage

Two-Stage LED Driver

Use Scenario: Boost converter operating in continuous conduction mode (CCM) at 65–100 kHz, rectifying AC line to 400 V DC bus.

IC Role / Device Role / Timing Role: Main switching transistor handling full input current; synchronized to controller IC via gate driver.

Use Value: Low Q_g and R_DS(on) reduce total losses below 1.2% at 250 W, enabling 80 PLUS Bronze compliance.

Use Scenario: Secondary-side synchronous rectifier or primary-side switch in isolated LED driver with 36–48 V output.

IC Role / Device Role / Timing Role: High-side switch in flyback topology; withstands reflected output voltage spikes during demagnetization.

Use Value: 500 V rating and 204 mJ E_AS eliminate need for snubber networks, simplifying BOM and improving reliability.

Hard-Switched Forward Converter

Industrial SMPS Auxiliary Supply

Use Scenario: Primary switch in two-switch forward topology powering 12–24 V control rails in PLC and motor drives.

IC Role / Device Role / Timing Role: Voltage-controlled power switch driven by isolated gate driver; operates at fixed 100–200 kHz frequency.

Use Value: 70 V/ns dV/dt rating prevents false triggering during transformer leakage spike transitions, ensuring stable duty cycle control.

Use Scenario: Standby or auxiliary power supply delivering 5–12 V at ≤5 W for microcontroller and sensor biasing.

IC Role / Device Role / Timing Role: Low-duty-cycle switching element in flyback configuration; activated only during system wake-up events.

Use Value: Ultra-low I_DSS (≤1 μA at 500 V) minimizes no-load power draw, supporting Energy Star Level VI standby requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	R_DS(on) = 0.22 Ω, Q_g = 72 nC, TO-220FP (full-pack) package with insulated tab	Higher conduction loss but lower gate charge; requires different heatsink isolation due to non-isolated tab	Prefer when gate drive strength is limited and thermal interface uses insulating pad
IXTH20N50L	R_DS(on) = 0.20 Ω, Q_g = 105 nC, TO-247AC package; higher PD (250 W) but larger footprint	Better thermal performance at high ambient, but incompatible PCB layout and higher cost	Choose for >300 W designs requiring extended thermal headroom and no layout change constraints

Compared with STP20NM50FP and IXTH20N50L, SIHP20N50E-GE3 delivers the lowest R_DS(on) × Q_g FOM among TO-220AB devices in this voltage class, making it optimal for space-constrained, efficiency-critical 200–300 W SMPS where thermal interface and gate drive capability are balanced.

Availability

SIHP20N50E-GE3 is available at Aetrix Electronics and suitable for ATX power supplies, LED lighting drivers, and industrial switch-mode power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHP20N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFETs-including SIHP20N50E-GE3-are engineered for high-efficiency, hard-switched SMPS topologies such as PFC, flyback, and forward converters, targeting computing, lighting, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SIHP20N50E-GE3 at 100 °C case temperature?

The SIHP20N50E-GE3 supports a continuous drain current of 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and must be validated against actual board-level thermal resistance and airflow conditions in the final design. The SIHP20N50E-GE3 datasheet provides SOA curves to confirm safe operation under transient loads.

Does SIHP20N50E-GE3 have avalanche capability, and how is it tested?

Yes, SIHP20N50E-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 204 mJ (single-pulse, T_J = 25 °C). Testing follows JEDEC standard JESD24-1 using L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.8 A. The SIHP20N50E-GE3 maintains parametric integrity after stress, confirming ruggedness for flyback and resonant converter applications.

What is the gate threshold voltage range for SIHP20N50E-GE3, and how does it affect drive circuit design?

The SIHP20N50E-GE3 has a gate threshold voltage V_GS(th) of 2.0–4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended activation from noise. Drive circuits for SIHP20N50E-GE3 should maintain V_GS ≥ 8 V for full enhancement and include adequate negative turn-off bias to prevent shoot-through in half-bridge configurations.

Is SIHP20N50E-GE3 suitable for use in PFC circuits operating above 100 kHz?

Yes, SIHP20N50E-GE3 is optimized for high-frequency PFC operation up to 200 kHz. Its low Q_gd/Q_g ratio (19/92 nC) and C_iss = 1640 pF yield fast, controllable switching with minimal Miller effect. The SIHP20N50E-GE3 datasheet includes turn-on/off delay and rise/fall time data (e.g., t_r = 27–54 ns) confirming suitability for critical conduction mode (CRM) and continuous conduction mode (CCM) PFC designs.

How does the body diode performance of SIHP20N50E-GE3 compare to standard fast recovery diodes in flyback applications?

The SIHP20N50E-GE3 body diode offers t_rr = 293 ns and Q_rr = 4.0 μC at I_F = 10 A, outperforming many discrete FRDs in softness and recovery consistency. In flyback operation, this reduces voltage overshoot and EMI generation during secondary-side conduction. The SIHP20N50E-GE3 body diode is not intended as a primary rectifier but provides robust freewheeling during transformer reset cycles.

SIHP20N50E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 184mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1640 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP20N50E-GE3 FAQ

1.How can I place an order for SIHP20N50E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP20N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP20N50E-GE3 reliable?

The price and inventory of SIHP20N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP20N50E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP20N50E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP20N50E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP20N50E-GE3?

SIHP20N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP20N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP20N50E-GE3?

For technical support, including SIHP20N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP20N50E-GE3 requirements.

6.How does Aetrix verify that SIHP20N50E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP20N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP20N50E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP20N50E-GE3?

All SIHP20N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP20N50E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP20N50E-GE3 part is unused and in its original packaging.

Return procedure for SIHP20N50E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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