Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP21N60EF-BE3

Name: SIHP21N60EF-BE3
Brand: Vishay Siliconix
SKU: SIHP21N60EF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP21N60EF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP21N60EF-BE3.pdf

Description:: MOSFET N-CH 600V 21A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,135

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP21N60EF-BE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode power MOSFET in TO-220AB package with fast body diode, optimized for high-efficiency LLC and phase-shifted bridge topologies in telecom and solar inverters. It delivers R_DS(on) = 0.176 Ω at V_GS = 10 V, Q_g = 84 nC, and avalanche-rated E_AS = 367 mJ.

For engineers reviewing the SIHP21N60EF-BE3 datasheet, SIHP21N60EF-BE3 pinout, SIHP21N60EF-BE3 application, or SIHP21N60EF-BE3 equivalent, key selection criteria include its low Q_rr (1.52 μC), fast trr (270 ns), reduced C_iss (2030 pF), and robust UIS capability - critical for ZVS switching and high-reliability industrial SMPS designs.

Technical Context

This EF-series MOSFET employs silicon technology with optimized charge distribution to minimize reverse recovery losses in hard- and soft-switched converters. Its gate charge profile (Q_gd/Q_g = 28.6%) supports precise timing control in resonant topologies, while the low C_oss(tr) (299 pF) enables predictable turn-off behavior under high dV/dt conditions.

The integrated fast body diode exhibits I_RRM = 11 A and dV/dt immunity up to 50 V/ns, enabling reliable freewheeling in bidirectional current paths without external Schottky supplementation. Thermal resistance R_thJC = 0.55 °C/W ensures efficient heat transfer to heatsinks in high-power-density 1–3 kW systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50% safety margin for transient overvoltage in PV inverters and telecom rectifiers
R_DS(on) max	0.176 Ω at V_GS = 10 V - limits conduction loss to ≤3.9 W at 11 A continuous, enabling thermally constrained PCB layouts
Q_g max	84 nC - reduces gate drive power requirement and allows use of lower-current drivers in high-frequency (>100 kHz) LLC controllers
Q_rr max	1.52 μC - cuts body diode switching loss by >40% vs. standard MOSFETs, directly improving efficiency in phase-shifted full-bridge converters
E_AS	367 mJ - withstands unclamped inductive switching events in welder output stages and battery charger flyback snubbers
trr	270 ns - enables clean zero-voltage switching transitions in 3-level NPC inverters operating up to 100 kHz
R_thJC	0.55 °C/W - permits 227 W power dissipation with ≤125 °C junction rise above 25 °C case, supporting forced-air-cooled 2 kW supplies

Pinout & Package

TO-220AB package with isolated drain tab (non-insulated); standard 3-pin through-hole mounting; drain connected to metal tab for direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; input capacitance C_iss = 2030 pF requires <1 Ω gate resistor for <50 ns switching transitions
D (Drain)	High-side power terminal	Connected to metal tab; electrically tied to heatsink; rated for 600 V blocking and 53 A pulsed current
S (Source)	Reference node / return path	Common connection point for gate driver return, current sense, and body diode cathode; low-inductance layout essential for dI/dt stability

Key Features

Feature	Design Value
Fast body diode	trr = 270 ns and Q_rr = 1.52 μC reduce switching loss and EMI in hard-commutated half-bridges used in LED drivers
Low Q_g/R_DS(on) FOM	Q_g × R_DS(on) = 14.8 - enables higher frequency operation without sacrificing conduction efficiency in 1–2 kW server PSUs
Avalanche energy rating	E_AS = 367 mJ - eliminates need for external clamping in UPS output stages subject to load dump transients
Low C_iss	2030 pF - minimizes Miller effect during high-dV/dt switching, improving noise immunity in noisy industrial environments
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912

Applications

Telecom Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter for 48 V telecom rectifier with 380 V DC bus. IC Role / Device Role / Timing Role: High-side switching element synchronized to resonant tank zero-crossing; body diode conducts during dead-time. Use Value: Low Q_rr and fast trr prevent shoot-through and reduce thermal stress on gate driver, extending system MTBF beyond 100,000 hours.	Use Scenario: Upper-leg switch in three-phase 3-level NPC inverter for residential solar string inverters (≤5 kW). IC Role / Device Role / Timing Role: Fast-switching N-channel device handling bidirectional current flow during modulation; body diode recovers before complementary switch turns on. Use Value: 50 V/ns dV/dt immunity and 11 A I_RRM ensure stable commutation under grid fault conditions without false triggering.
LED Driver	Industrial Battery Charger
Use Scenario: Switching element in 300 W constant-current buck-boost LED driver for street lighting with 100–305 V AC input. IC Role / Device Role / Timing Role: Main power switch operating at 65–130 kHz; body diode provides freewheel path during off-time. Use Value: V_SD = 1.2 V at 11 A minimizes forward conduction loss during extended off-periods, improving overall efficiency to ≥94%.	Use Scenario: Output stage switch in 2 kW lithium-ion battery charger using asymmetric half-bridge topology with active clamp. IC Role / Device Role / Timing Role: Energy-recycling switch managing inductive kickback during clamp discharge; subjected to repetitive UIS events. Use Value: Rated E_AS = 367 mJ allows 100% duty-cycle clamp operation without derating, eliminating need for oversized snubbers.

Telecom Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter for 48 V telecom rectifier with 380 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element synchronized to resonant tank zero-crossing; body diode conducts during dead-time.

Use Value: Low Q_rr and fast trr prevent shoot-through and reduce thermal stress on gate driver, extending system MTBF beyond 100,000 hours.

Use Scenario: Upper-leg switch in three-phase 3-level NPC inverter for residential solar string inverters (≤5 kW).

IC Role / Device Role / Timing Role: Fast-switching N-channel device handling bidirectional current flow during modulation; body diode recovers before complementary switch turns on.

Use Value: 50 V/ns dV/dt immunity and 11 A I_RRM ensure stable commutation under grid fault conditions without false triggering.

LED Driver

Industrial Battery Charger

Use Scenario: Switching element in 300 W constant-current buck-boost LED driver for street lighting with 100–305 V AC input.

IC Role / Device Role / Timing Role: Main power switch operating at 65–130 kHz; body diode provides freewheel path during off-time.

Use Value: V_SD = 1.2 V at 11 A minimizes forward conduction loss during extended off-periods, improving overall efficiency to ≥94%.

Use Scenario: Output stage switch in 2 kW lithium-ion battery charger using asymmetric half-bridge topology with active clamp.

IC Role / Device Role / Timing Role: Energy-recycling switch managing inductive kickback during clamp discharge; subjected to repetitive UIS events.

Use Value: Rated E_AS = 367 mJ allows 100% duty-cycle clamp operation without derating, eliminating need for oversized snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22N60M2	R_DS(on) = 0.19 Ω, Q_g = 72 nC, no specified Q_rr or trr data in datasheet	Lacks published body diode recovery specs; not recommended for ZVS topologies requiring low Q_rr	Prefer SIHP21N60EF-BE3 where trr < 300 ns and Q_rr < 2 μC are mandatory for efficiency targets
IXFH20N60X	R_DS(on) = 0.22 Ω, Q_g = 65 nC, Q_rr = 1.8 μC, trr = 320 ns	Higher Q_rr and slower trr increase switching loss in 100+ kHz LLC designs	SIHP21N60EF-BE3 offers 15% lower Q_rr and 18% faster trr - measurable improvement in 2 kW telecom PSU efficiency maps

Compared with STP22N60M2 and IXFH20N60X, SIHP21N60EF-BE3 provides superior body diode performance and lower conduction loss, making it the preferred choice for high-frequency resonant converters where diode recovery governs total system loss.

Availability

SIHP21N60EF-BE3 is available at Aetrix Electronics and suitable for telecom power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing locations.

Supply support for SIHP21N60EF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The EF Series - including SIHP21N60EF-BE3 - was engineered specifically for high-efficiency, high-frequency switched-mode power supplies using soft-switching topologies such as LLC and phase-shifted bridge.

FAQ

What is the maximum continuous drain current rating for SIHP21N60EF-BE3 at 100 °C case temperature?

The SIHP21N60EF-BE3 supports 14 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual board-level thermal resistance in the target application. The SIHP21N60EF-BE3 maintains R_DS(on) stability across this range due to its positive V_GS(th) temperature coefficient.

Does SIHP21N60EF-BE3 have a fully characterized fast body diode, and what are its key recovery parameters?

Yes, the SIHP21N60EF-BE3 features a fully characterized fast body diode with trr = 270 ns (max), Q_rr = 1.52 μC (max), and I_RRM = 11 A (max) at T_J = 25 °C. These values are measured under standardized conditions (IF = IS = 11 A, dI/dt = 100 A/μs, VR = 400 V) and are integral to its use in ZVS circuits. The SIHP21N60EF-BE3 datasheet provides full diode forward voltage (V_SD = 1.2 V) and reverse recovery waveforms.

Is SIHP21N60EF-BE3 suitable for avalanche-prone applications like welding equipment or active clamp circuits?

Yes, the SIHP21N60EF-BE3 is explicitly rated for unclamped inductive switching with E_AS = 367 mJ (single-pulse, T_J = 25 °C). This makes it suitable for welding output stages and active-clamp flyback converters where inductive energy must be safely absorbed. The SIHP21N60EF-BE3's ruggedness is further enhanced by low Q_rr, reducing secondary breakdown risk during repetitive avalanche events.

What is the gate threshold voltage range for SIHP21N60EF-BE3, and how does it affect drive circuit design?

The SIHP21N60EF-BE3 has a gate-source threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at T_J = 25 °C. This ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. The SIHP21N60EF-BE3 requires V_GS ≥ 10 V to achieve its rated R_DS(on); drive circuits must sustain ≥12 V to accommodate drop across gate resistors and PCB traces.

How does the "-BE3" suffix in SIHP21N60EF-BE3 impact compliance and reliability?

The "-BE3" suffix indicates an alternate manufacturing location within Vishay's qualified global network and confirms lead (Pb)-free and halogen-free construction per RoHS Directive 2011/65/EU. Reliability data-including HTOL, UHAST, and TC testing-is composite across all qualified sites and applies identically to SIHP21N60EF-BE3. No performance or qualification differences exist between -BE3 and -GE3 variants.

SIHP21N60EF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 176mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2030 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP21N60EF-BE3 FAQ

1.How can I place an order for SIHP21N60EF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP21N60EF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP21N60EF-BE3 reliable?

The price and inventory of SIHP21N60EF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP21N60EF-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP21N60EF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP21N60EF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP21N60EF-BE3?

SIHP21N60EF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP21N60EF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP21N60EF-BE3?

For technical support, including SIHP21N60EF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP21N60EF-BE3 requirements.

6.How does Aetrix verify that SIHP21N60EF-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP21N60EF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP21N60EF-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP21N60EF-BE3?

All SIHP21N60EF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP21N60EF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP21N60EF-BE3 part is unused and in its original packaging.

Return procedure for SIHP21N60EF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …