Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP21N60EF-GE3

Name: SIHP21N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHP21N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP21N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP21N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 21A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,463

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP21N60EF-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode power MOSFET in TO-220AB package with fast body diode, optimized for ZVS and LLC resonant topologies in high-efficiency server PSUs and solar inverters. It delivers R_DS(on) = 0.176 Ω at V_GS = 10 V, Q_g = 84 nC, and ultra-low Q_rr = 1.52 μC.

For engineers reviewing the SIHP21N60EF-GE3 datasheet, SIHP21N60EF-GE3 pinout, SIHP21N60EF-GE3 application, or SIHP21N60EF-GE3 equivalent, key selection criteria include its 367 mJ UIS rating, 70 V/ns dV/dt capability, low C_iss = 2030 pF, and robustness in hard-switched and resonant SMPS designs requiring fast-recovery body diode performance.

Technical Context

This MOSFET employs Vishay's EF-series silicon technology to reduce reverse recovery charge (Q_rr) and time (t_rr = 270 ns max), enabling higher-frequency operation in phase-shifted bridge and 3-level inverter topologies. Its low gate charge (Q_g = 84 nC) and input capacitance (C_iss = 2030 pF) minimize driver losses and improve switching efficiency.

The device features avalanche-rated ruggedness (E_AS = 367 mJ), thermal resistance R_thJC = 0.55 °C/W, and operates across -55 °C to +150 °C junction temperature. Its body diode exhibits V_SD = 1.2 V max at I_S = 11 A and I_RRM = 11 A, supporting bidirectional conduction in synchronous rectification and bidirectional DC/DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus applications with 50 % voltage margin for transients in PV inverters and telecom rectifiers
R_DS(on) max	0.176 Ω @ V_GS = 10 V - enables <1.9 W conduction loss at 11 A, critical for thermally constrained 1U server PSUs
Q_g max	84 nC - reduces gate drive power and allows use of lower-cost drivers in high-frequency LLC converters
Q_rr max	1.52 μC - cuts body diode switching loss by >40 % vs. standard MOSFETs, improving efficiency in ZVS circuits
E_AS	367 mJ - ensures reliable unclamped inductive switching in welder output stages and motor drives
t_rr	270 ns max - limits diode reverse recovery noise and EMI in high-dV/dt environments like solar string inverters
R_thJC	0.55 °C/W - enables 227 W power dissipation with minimal heatsink in industrial battery chargers

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC-compliant footprint. Thermal pad electrically connected to drain for direct heatsink coupling.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal; low C_iss and Q_g enable fast turn-on with minimal overshoot
D (Drain)	High-side power node	Connected to heatsink via isolated tab; rated for 600 V blocking and 53 A pulsed current
S (Source)	Power return / reference	Common node for gate drive return and current sensing; low-inductance layout critical for dI/dt stability

Key Features

Feature	Design Value
Fast body diode	Q_rr = 1.52 μC and t_rr = 270 ns enable zero-voltage switching in LLC and PSFB without external SiC diodes
Low FOM (R_DS(on) × Q_g)	14.8 Ω·nC - balances conduction and switching losses for optimal efficiency at 100–500 kHz
Avalanche energy rating	E_AS = 367 mJ - eliminates need for external snubbers in inductive load switching (e.g., welding inverters)
Ultra-low C_iss	2030 pF - reduces Miller effect, improves gate drive stability in high-side configurations
Lead (Pb)-free & halogen-free	RoHS-compliant construction per Vishay Doc. 99912 - meets IPC-J-STD-609A Class 1 material categorization

Applications

Server Power Supplies	Solar PV Inverters
Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for AI server rack PSUs. IC Role / Device Role / Timing Role: High-voltage, high-current primary switch operating at 200–300 kHz with ZVS enabled by fast body diode. Use Value: Q_rr = 1.52 μC minimizes dead-time loss and improves full-load efficiency by 0.8 % vs. standard 600 V MOSFETs.	Use Scenario: DC-link switching stage in string-level 1100 V PV inverter with 3-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg switch handling 600 V DC bus with repetitive 70 V/ns dV/dt stress during commutation. Use Value: dV/dt = 70 V/ns rating and E_AS = 367 mJ ensure reliable operation under fast voltage transients from stray inductance.
Industrial Battery Chargers	HID Lighting Ballasts
Use Scenario: Output stage in 10 kW bi-directional EVSE charger using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-role power stage, conducting up to 21 A continuously. Use Value: R_thJC = 0.55 °C/W and T_J = 150 °C rating allow compact heatsink design while sustaining 100 % duty-cycle conduction.	Use Scenario: High-frequency AC switch in electronic ballast for 400 W metal halide HID lamp. IC Role / Device Role / Timing Role: Resonant switch operating at 250 kHz with hard-commutated body diode conduction during lamp ignition. Use Value: V_SD = 1.2 V and I_RRM = 11 A support reliable hot restrike without secondary diode clamping.

Server Power Supplies

Solar PV Inverters

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for AI server rack PSUs.

IC Role / Device Role / Timing Role: High-voltage, high-current primary switch operating at 200–300 kHz with ZVS enabled by fast body diode.

Use Value: Q_rr = 1.52 μC minimizes dead-time loss and improves full-load efficiency by 0.8 % vs. standard 600 V MOSFETs.

Use Scenario: DC-link switching stage in string-level 1100 V PV inverter with 3-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg switch handling 600 V DC bus with repetitive 70 V/ns dV/dt stress during commutation.

Use Value: dV/dt = 70 V/ns rating and E_AS = 367 mJ ensure reliable operation under fast voltage transients from stray inductance.

Industrial Battery Chargers

HID Lighting Ballasts

Use Scenario: Output stage in 10 kW bi-directional EVSE charger using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-role power stage, conducting up to 21 A continuously.

Use Value: R_thJC = 0.55 °C/W and T_J = 150 °C rating allow compact heatsink design while sustaining 100 % duty-cycle conduction.

Use Scenario: High-frequency AC switch in electronic ballast for 400 W metal halide HID lamp.

IC Role / Device Role / Timing Role: Resonant switch operating at 250 kHz with hard-commutated body diode conduction during lamp ignition.

Use Value: V_SD = 1.2 V and I_RRM = 11 A support reliable hot restrike without secondary diode clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast-body-diode MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW21N60M2	R_DS(on) = 0.18 Ω, Q_rr = 1.7 μC, TO-247 package, no UIS rating	Lacks avalanche rating; requires external protection in inductive loads	Prefer SIHP21N60EF-GE3 where unclamped inductive energy must be absorbed internally
IXFH20N60P	R_DS(on) = 0.22 Ω, Q_rr = 2.1 μC, TO-247, 600 V V_DS, no Co(er) spec	Higher conduction and recovery losses; not optimized for ZVS topologies	SIHP21N60EF-GE3 offers 18 % lower R_DS(on) × Q_g FOM for improved light-load efficiency

Compared with STW21N60M2 and IXFH20N60P, SIHP21N60EF-GE3 provides superior ZVS compatibility due to its lower Q_rr and certified UIS ruggedness, while its TO-220AB package enables cost-effective thermal management in space-constrained telecom and lighting systems.

Availability

SIHP21N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHP21N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The EF Series, including SIHP21N60EF-GE3, was engineered specifically for high-frequency resonant and soft-switching power conversion, targeting efficiency-critical infrastructure such as datacenter PSUs and renewable energy inverters.

FAQ

What is the maximum continuous drain current rating for SIHP21N60EF-GE3 at 100 °C case temperature?

The SIHP21N60EF-GE3 supports 14 A continuous drain current at T_C = 100 °C, derated linearly from 21 A at 25 °C using the specified 1.8 W/°C factor. This rating reflects real-world thermal constraints in enclosed power modules and ensures safe operation without exceeding the 150 °C maximum junction temperature. The SIHP21N60EF-GE3 datasheet confirms this value in the Absolute Maximum Ratings table on page 1.

Does SIHP21N60EF-GE3 have a fully rated avalanche energy specification?

Yes, SIHP21N60EF-GE3 is fully rated for unclamped inductive switching with E_AS = 367 mJ at T_J = 25 °C, tested per JEDEC JESD24-1. This single-pulse avalanche capability allows the SIHP21N60EF-GE3 to safely absorb inductive energy in welder outputs and motor drives without external snubbers. The test conditions (V_DD = 50 V, L = 28.2 mH, I_AS = 5.1 A) are documented in the datasheet footnote b.

What is the typical reverse recovery time (t_rr) of the body diode in SIHP21N60EF-GE3?

The SIHP21N60EF-GE3 body diode has a typical reverse recovery time of 135 ns and a maximum of 270 ns at T_J = 25 °C, I_F = 11 A, dI/dt = 100 A/μs, and V_R = 400 V. This fast recovery is central to the EF series' design and directly enables reduced switching loss in phase-shifted bridge topologies. The SIHP21N60EF-GE3 specification appears in the Drain-Source Body Diode Characteristics table on page 2.

Is SIHP21N60EF-GE3 compatible with standard TO-220AB footprints and heatsinks?

Yes, SIHP21N60EF-GE3 uses the industry-standard TO-220AB package with mechanical dimensions and mounting hole alignment identical to JEDEC MS-001AC. Its isolated drain tab allows direct attachment to heatsinks without insulating hardware, and the R_thJC = 0.55 °C/W rating is validated for this configuration. The SIHP21N60EF-GE3 package outline is shown on page 1 of the datasheet.

What gate voltage is required to fully enhance SIHP21N60EF-GE3?

The SIHP21N60EF-GE3 is specified for full enhancement at V_GS = 10 V, with R_DS(on) guaranteed ≤ 0.176 Ω under that condition. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, confirming logic-level compatibility, but optimal conduction performance requires 10 V drive. This V_GS = 10 V requirement is explicitly stated in the PRODUCT SUMMARY and Specifications tables for SIHP21N60EF-GE3.

SIHP21N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 176mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2030 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP21N60EF-GE3 FAQ

1.How can I place an order for SIHP21N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP21N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP21N60EF-GE3 reliable?

The price and inventory of SIHP21N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP21N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP21N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP21N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP21N60EF-GE3?

SIHP21N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP21N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP21N60EF-GE3?

For technical support, including SIHP21N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP21N60EF-GE3 requirements.

6.How does Aetrix verify that SIHP21N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP21N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP21N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP21N60EF-GE3?

All SIHP21N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP21N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP21N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHP21N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …