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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP21N65EF-GE3

Name: SIHP21N65EF-GE3
Brand: Vishay Siliconix
SKU: SIHP21N65EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP21N65EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP21N65EF-GE3.pdf

Description:: MOSFET N-CH 650V 21A TO220AB

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Product details

Overview

SIHP21N65EF-GE3 from Vishay Siliconix is a 650 V, 21 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring fast body diode, 0.15 Ω R_DS(on) at V_GS = 10 V, 71 nC typical Q_g, and 367 mJ single-pulse avalanche energy - designed for high-efficiency, high-frequency switch-mode power supplies including PV inverters and telecom rectifiers.

For engineers reviewing the SIHP21N65EF-GE3 datasheet, SIHP21N65EF-GE3 pinout, SIHP21N65EF-GE3 application, or SIHP21N65EF-GE3 equivalent, key selection criteria include its low Q_rr (1.2 μC), fast trr (160 ns), reduced C_iss (2322 pF), and E-series fast-body-diode architecture optimized for ZVS and LCC topologies.

Technical Context

This MOSFET employs Vishay's E-series fast-body-diode technology to minimize reverse recovery charge (Q_rr) and time (t_rr), enabling high-frequency operation in resonant converters. Its low gate charge (Q_g = 71 nC typ.) and ultra-low Q_gd/Q_g ratio (33/71 ≈ 46.5%) support clean switching with reduced Miller-induced oscillation.

The device integrates an avalanche-rated body diode (E_AS = 367 mJ) and exhibits stable R_DS(on) temperature coefficient (0.67 V/°C), supporting reliable operation up to T_J = 150 °C. Thermal resistance R_thJC is 0.5 °C/W, confirming suitability for high-power-density thermal management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V AC input systems with ≥20% margin for surge and ringing in industrial SMPS and solar inverters
R_DS(on) max @ 25 °C	0.18 Ω - enables <1.9 W conduction loss at 11 A DC, critical for efficiency in 1–3 kW power stages
Q_g max	106 nC - determines gate driver power requirement and switching speed; low value reduces driver stress in high-frequency designs
t_rr	160 ns - fast body diode recovery minimizes shoot-through risk and losses in phase-shifted bridge and LLC converters
E_AS	367 mJ - rated unclamped inductive switching capability ensures robustness during transient overloads without external snubbers
C_iss	2322 pF - low input capacitance improves gate drive efficiency and reduces Miller feedback in hard-switched topologies
I_D cont @ T_C = 100 °C	13 A - defines real-world continuous current handling under typical heatsink conditions in enclosed power enclosures

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical performance; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; low Q_gs (14 nC) and Q_gd (33 nC) enable fast turn-on/turn-off with minimal Miller plateau duration
D (Drain)	High-side power output	Connected to internal die drain and exposed metal tab; must be soldered to large copper pour for thermal dissipation and low-inductance return path
S (Source)	Reference node / return path	Serves as local ground reference for gate drive; low-inductance layout essential to avoid false triggering during dV/dt transients

Key Features

Feature	Design Value
Fast body diode (E-series)	Reduces Q_rr to 1.2 μC and t_rr to 160 ns - directly lowers switching losses in resonant and synchronous rectifier applications
Low R_DS(on) × Q_g FOM	10.6 Ω·nC - benchmark figure-of-merit indicating superior conduction + switching tradeoff vs. standard 650 V MOSFETs
Avalanche-rated	367 mJ single-pulse E_AS - eliminates need for external clamping in inductive load switching and fault-tolerant designs
Ultra-low C_iss	2322 pF at V_DS = 100 V - reduces gate drive power and improves noise immunity in high-dV/dt environments
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - meets environmental requirements for industrial and telecom equipment

Applications

Telecom Rectifier Module	Solar PV Inverter
Use Scenario: High-efficiency 48 V/54 V output stage in 3 kW telecom rectifier using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Primary-side high-side switching MOSFET operating at 100–200 kHz with zero-voltage switching. Use Value: Fast t_rr and low Q_rr reduce dead-time losses and improve ZVS window stability across line/load variations.	Use Scenario: DC-link switching stage in string-type solar inverter converting 600–1000 V DC to 230 V AC via three-level NPC topology. IC Role / Device Role / Timing Role: High-voltage leg switch handling bidirectional current with body diode conduction during freewheeling intervals. Use Value: Avalanche rating and robust body diode allow safe operation during grid faults and reactive power cycling without additional protection.
Industrial Welding Power Supply	HID Lamp Ballast
Use Scenario: IGBT replacement in 15–20 kHz inverter-based arc welding supply requiring rapid current control and soft switching. IC Role / Device Role / Timing Role: Output stage switch modulating 100–300 A DC with high dI/dt capability and low conduction loss. Use Value: R_DS(on) of 0.15 Ω (typ.) and 13 A continuous rating at 100 °C enable compact heatsinking and >95% efficiency at full load.	Use Scenario: Resonant half-bridge driver for 250–1000 W high-intensity discharge lamps in street lighting systems. IC Role / Device Role / Timing Role: High-side switch in LCC resonant tank, conducting during capacitive and inductive modes with body diode commutation. Use Value: Low C_oss(er) (84 pF) and controlled dV/dt (31 V/ns) ensure stable ignition and lamp warm-up without voltage overshoot or acoustic resonance.

Telecom Rectifier Module

Solar PV Inverter

Use Scenario: High-efficiency 48 V/54 V output stage in 3 kW telecom rectifier using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side high-side switching MOSFET operating at 100–200 kHz with zero-voltage switching.

Use Value: Fast t_rr and low Q_rr reduce dead-time losses and improve ZVS window stability across line/load variations.

Use Scenario: DC-link switching stage in string-type solar inverter converting 600–1000 V DC to 230 V AC via three-level NPC topology.

IC Role / Device Role / Timing Role: High-voltage leg switch handling bidirectional current with body diode conduction during freewheeling intervals.

Use Value: Avalanche rating and robust body diode allow safe operation during grid faults and reactive power cycling without additional protection.

Industrial Welding Power Supply

HID Lamp Ballast

Use Scenario: IGBT replacement in 15–20 kHz inverter-based arc welding supply requiring rapid current control and soft switching.

IC Role / Device Role / Timing Role: Output stage switch modulating 100–300 A DC with high dI/dt capability and low conduction loss.

Use Value: R_DS(on) of 0.15 Ω (typ.) and 13 A continuous rating at 100 °C enable compact heatsinking and >95% efficiency at full load.

Use Scenario: Resonant half-bridge driver for 250–1000 W high-intensity discharge lamps in street lighting systems.

IC Role / Device Role / Timing Role: High-side switch in LCC resonant tank, conducting during capacitive and inductive modes with body diode commutation.

Use Value: Low C_oss(er) (84 pF) and controlled dV/dt (31 V/ns) ensure stable ignition and lamp warm-up without voltage overshoot or acoustic resonance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW21N65M5	650 V, 21 A, R_DS(on) = 0.19 Ω, Q_g = 85 nC, no specified Q_rr or t_rr data in datasheet	Lacks published fast-body-diode specs; not qualified for ZVS-critical topologies requiring low Q_rr	Prefer SIHP21N65EF-GE3 where t_rr ≤ 160 ns and Q_rr ≤ 1.2 μC are required for resonant operation
IXTH20N65X2	650 V, 20 A, R_DS(on) = 0.22 Ω, Q_g = 62 nC, t_rr = 140 ns, Q_rr = 1.0 μC	Lower Q_g but higher R_DS(on); TO-247 package requires larger PCB footprint and different thermal interface	Choose IXTH20N65X2 only if lower gate drive power outweighs conduction loss penalty and TO-247 layout is acceptable

Compared with STW21N65M5 and IXTH20N65X2, SIHP21N65EF-GE3 uniquely balances low R_DS(on), low Q_g, and documented fast-body-diode performance in a surface-mount D2PAK package - making it optimal for space-constrained, high-frequency industrial and renewable energy power stages.

Availability

SIHP21N65EF-GE3 is available at Aetrix Electronics and suitable for telecom rectifiers, solar PV inverters, and industrial welding power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHP21N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The SIHP21N65EF-GE3 belongs to Vishay's E-series high-voltage Power MOSFET family, engineered specifically for high-efficiency, high-frequency switch-mode power conversion in telecom, solar, and industrial equipment where fast body diode behavior and avalanche ruggedness are critical.

FAQ

What is the maximum junction temperature rating for SIHP21N65EF-GE3?

The SIHP21N65EF-GE3 has a maximum operating junction temperature of +150 °C, with storage temperature range from –55 °C to +150 °C. This rating is validated per Vishay's thermal testing protocol and supports continuous operation in enclosed industrial enclosures when mounted on appropriate copper area per the D2PAK thermal guidelines.

Does SIHP21N65EF-GE3 support logic-level gate drive?

No, SIHP21N65EF-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, but it is characterized and specified for R_DS(on) at V_GS = 10 V. For reliable enhancement-mode operation and low on-resistance, a 10 V ±10% gate drive is required - not 3.3 V or 5 V logic levels.

What is the avalanche energy rating of SIHP21N65EF-GE3 and how is it tested?

The SIHP21N65EF-GE3 is rated for 367 mJ single-pulse unclamped inductive switching (UIS) energy at T_C = 25 °C, tested per JEDEC JESD24-11 with L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.1 A. This rating confirms ruggedness against inductive transients in motor drives and power supply startup/fault conditions without external clamping.

How does the fast body diode in SIHP21N65EF-GE3 improve converter efficiency?

The fast body diode in SIHP21N65EF-GE3 reduces reverse recovery charge Q_rr to 1.2 μC and recovery time t_rr to 160 ns, directly lowering switching losses during freewheeling and commutation in LLC, phase-shifted bridge, and LCC topologies. This allows tighter dead-time control and higher frequency operation while maintaining ZVS, improving overall system efficiency by 0.5–1.2% in 1–3 kW designs.

Is SIHP21N65EF-GE3 RoHS-compliant and halogen-free?

Yes, SIHP21N65EF-GE3 is both lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and JEDEC JS709C standards. The "-GE3" suffix explicitly denotes Vishay's green, environmentally compliant packaging - verified through material declarations and third-party testing per IEC 62321.

SIHP21N65EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 106 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2322 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP21N65EF-GE3 FAQ

1.How can I place an order for SIHP21N65EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP21N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP21N65EF-GE3 reliable?

The price and inventory of SIHP21N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP21N65EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP21N65EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP21N65EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP21N65EF-GE3?

SIHP21N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP21N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP21N65EF-GE3?

For technical support, including SIHP21N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP21N65EF-GE3 requirements.

6.How does Aetrix verify that SIHP21N65EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP21N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP21N65EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP21N65EF-GE3?

All SIHP21N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP21N65EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP21N65EF-GE3 part is unused and in its original packaging.

Return procedure for SIHP21N65EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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