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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP21N80AEF-GE3

Name: SIHP21N80AEF-GE3
Brand: Vishay Siliconix
SKU: SIHP21N80AEF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP21N80AEF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP21N80AEF-GE3.pdf

Description:: E SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHP21N80AEF-GE3 from Vishay Siliconix is an 800 V, 16.3 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.220 Ω R_DS(on) at V_GS = 10 V, 71 nC total gate charge, and fast body diode with 128 ns typical reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHP21N80AEF-GE3 datasheet, SIHP21N80AEF-GE3 pinout, SIHP21N80AEF-GE3 application, or SIHP21N80AEF-GE3 equivalent, key selection criteria include its 800 V V_DS, avalanche-rated 127 mJ E_AS, 0.7 °C/W R_thJC, and EF-series optimized Co(er) of 44 pF - critical for hard-switched and resonant topologies requiring robust dv/dt immunity and fast diode recovery.

Technical Context

This MOSFET employs planar silicon technology with a fast-integrated body diode engineered for reduced Q_rr (0.8–1.6 μC) and controlled diode dv/dt (50 V/ns). Its low figure-of-merit (R_DS(on) × Q_g = 15.6 Ω·nC) targets high-frequency switching above 100 kHz in continuous conduction mode (CCM) PFC and LLC resonant converters.

The device supports unclamped inductive switching (UIS) up to 127 mJ and operates across –55 °C to +150 °C junction temperature. Gate threshold voltage (2.0–4.0 V) and ±30 V V_GS rating enable compatibility with standard 12 V gate drivers while maintaining noise immunity in noisy industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 400 V AC input PFC designs with 2× safety margin and withstands transient overvoltages in telecom rectifiers.
R_DS(on) typ @ 25 °C	0.220 Ω - enables <1.9 W conduction loss at 11 A, reducing heatsink requirements in 1–3 kW power stages.
Q_g max	71 nC - determines gate drive power and switching speed; pairs with 9.1 Ω R_g for ~36 ns turn-on delay in hard-switched applications.
E_AS	127 mJ - ensures single-pulse avalanche ruggedness during startup, overload, or short-circuit events without derating.
Co(er)	44 pF - energy-related output capacitance optimized for ZVS transition efficiency in phase-shifted full-bridge and LLC converters.
trr typ	128 ns - fast body diode recovery minimizes commutation loss and ringing in synchronous rectification and bidirectional topologies.
R_thJC max	0.7 °C/W - enables high-power dissipation (179 W) with minimal thermal resistance to heatsink, supporting compact thermal design.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, 2.54 mm lead pitch, and RoHS-compliant matte tin plating. Thermal pad on backside requires mechanical clamping and thermal interface material for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 0.5 Ω gate input resistance limits high-frequency oscillation; threshold 2.0–4.0 V ensures reliable turn-on with standard PWM controllers.
D (Drain)	High-side power terminal	Connected to internal die substrate; electrically tied to metal tab - must be insulated from heatsink unless system ground referenced.
S (Source)	Power return and reference node	Serves as local ground for gate driver; carries full load current (16.3 A continuous); low-inductance layout critical for minimizing V_GS noise during switching.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	15.6 Ω·nC - directly reduces combined conduction + switching loss, enabling >98% efficiency in 2 kW PFC boost stages.
Avalanche energy rated (E_AS)	127 mJ - eliminates need for external snubbers in inductive load switching, improving reliability in motor drive inverters and welder outputs.
Fast body diode (Q_rr, trr)	0.8–1.6 μC Q_rr, 128 ns trr - suppresses voltage overshoot during freewheeling, reducing EMI and stress on adjacent devices in bridge configurations.
Reduced C_oss(er)	44 pF - lowers stored energy (E_oss) in output capacitance, easing zero-voltage switching (ZVS) implementation in resonant converters.
High dv/dt immunity	100 V/ns (T_J = 125 °C) - prevents false turn-on in high-noise environments like industrial motor drives and solar inverters.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Active clamp forward or interleaved PFC stage in 2 kW redundant server PSU. IC Role / Device Role / Timing Role: Main switch handling 11 A RMS current at 100–200 kHz with 640 V DC bus. Use Value: Low R_DS(on) and fast trr reduce conduction loss and diode recovery loss, improving full-load efficiency by 0.4–0.6% versus standard 800 V MOSFETs.	Use Scenario: High-density 48 V output rectification in -48 V telecom system with hold-up capacitor support. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 150 kHz with ZVS. Use Value: 44 pF Co(er) and 0.7 °C/W R_thJC enable stable ZVS across load range while limiting thermal rise to <45 °C at 100% load.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC link switching in string inverter's dual-stage architecture (boost + H-bridge). IC Role / Device Role / Timing Role: Boost switch handling 12 A peak current under 1000 V DC bus transients. Use Value: 800 V V_DS rating with 127 mJ E_AS withstands lightning-induced surges per IEC 61000-4-5, eliminating need for TVS clamping.	Use Scenario: Inverter leg switch in 5–7.5 kW HVAC variable frequency drive with regenerative braking. IC Role / Device Role / Timing Role: High-side switch conducting 16.3 A continuous with 37 A pulsed capability during deceleration. Use Value: Fast body diode and 50 V/ns reverse diode dv/dt rating prevent shoot-through during commutation, enhancing fault tolerance in 3-phase bridges.

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or interleaved PFC stage in 2 kW redundant server PSU.

IC Role / Device Role / Timing Role: Main switch handling 11 A RMS current at 100–200 kHz with 640 V DC bus.

Use Value: Low R_DS(on) and fast trr reduce conduction loss and diode recovery loss, improving full-load efficiency by 0.4–0.6% versus standard 800 V MOSFETs.

Use Scenario: High-density 48 V output rectification in -48 V telecom system with hold-up capacitor support.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 150 kHz with ZVS.

Use Value: 44 pF Co(er) and 0.7 °C/W R_thJC enable stable ZVS across load range while limiting thermal rise to <45 °C at 100% load.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC link switching in string inverter's dual-stage architecture (boost + H-bridge).

IC Role / Device Role / Timing Role: Boost switch handling 12 A peak current under 1000 V DC bus transients.

Use Value: 800 V V_DS rating with 127 mJ E_AS withstands lightning-induced surges per IEC 61000-4-5, eliminating need for TVS clamping.

Use Scenario: Inverter leg switch in 5–7.5 kW HVAC variable frequency drive with regenerative braking.

IC Role / Device Role / Timing Role: High-side switch conducting 16.3 A continuous with 37 A pulsed capability during deceleration.

Use Value: Fast body diode and 50 V/ns reverse diode dv/dt rating prevent shoot-through during commutation, enhancing fault tolerance in 3-phase bridges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW21N80K5	800 V, 21 A, R_DS(on) = 0.23 Ω, Q_g = 65 nC, TO-247 package	Higher current rating but larger footprint and higher gate charge; no specified Co(er) or trr data	Preferred for higher-current PFC where board space allows TO-247 and lower R_DS(on) outweighs gate drive complexity.
IXFH20N80X	800 V, 20 A, R_DS(on) = 0.24 Ω, Q_g = 62 nC, TO-247 package, no fast diode spec	Lacks documented fast body diode performance (trr, Q_rr) - unsuitable for hard-commutated or bidirectional use	Select only for unidirectional hard-switched SMPS where diode recovery is not critical and thermal margin exceeds 20 °C.

Compared with STW21N80K5 and IXFH20N80X, the SIHP21N80AEF-GE3 offers superior diode recovery (128 ns trr) and lower Co(er) (44 pF) in a smaller TO-220AB package - making it optimal for space-constrained, high-frequency PFC and resonant converters where diode behavior directly impacts efficiency and EMI.

Availability

SIHP21N80AEF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHP21N80AEF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, sensors, and passive elements, with vertical integration across silicon wafer fabrication, packaging, and reliability testing.

The EF Series power MOSFETs, including SIHP21N80AEF-GE3, are designed specifically for high-efficiency, high-reliability switch-mode power conversion in enterprise and industrial infrastructure - emphasizing low FOM, fast diode recovery, and avalanche ruggedness.

FAQ

What is the maximum continuous drain current rating for SIHP21N80AEF-GE3 at 100 °C case temperature?

The SIHP21N80AEF-GE3 has a maximum continuous drain current of 10.3 A at T_C = 100 °C, derated linearly from 16.3 A at 25 °C using a 1.4 W/°C factor. This rating assumes proper heatsinking and adheres to the absolute maximum junction temperature limit of +150 °C. The SIHP21N80AEF-GE3 datasheet specifies these values in the Absolute Maximum Ratings table under "Continuous drain current (T_J = 150 °C)".

Does SIHP21N80AEF-GE3 have a fast-recovery body diode, and what are its key diode parameters?

Yes, the SIHP21N80AEF-GE3 features a fast body diode optimized for reduced recovery loss. Key parameters include 128 ns typical reverse recovery time (t_rr), 0.8–1.6 μC reverse recovery charge (Q_rr), and 50 V/ns maximum reverse diode dv/dt rating. These values are measured at T_J = 25 °C, I_F = 11 A, di/dt = 100 A/μs, and V_R = 400 V - confirming suitability for hard-commutated topologies. The SIHP21N80AEF-GE3 integrates this diode monolithically without external components.

What is the thermal resistance from junction to case (R_thJC) for SIHP21N80AEF-GE3, and how does it impact heatsink design?

The SIHP21N80AEF-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 0.7 °C/W, enabling efficient heat transfer from the die to the heatsink. With a maximum power dissipation of 179 W, this results in a theoretical junction-to-case temperature rise of ≤125 °C at full load - well within the +150 °C T_J limit when paired with a properly sized heatsink. The SIHP21N80AEF-GE3 TO-220AB package requires mechanical clamping and thermal interface material for optimal R_thJC performance.

Can SIHP21N80AEF-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the SIHP21N80AEF-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (E_AS) of 127 mJ under defined test conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.0 A, starting T_J = 25 °C). This ruggedness supports reliable operation during transient overloads and inductive turn-off events without external protection. The SIHP21N80AEF-GE3 datasheet confirms this in the Absolute Maximum Ratings section.

What gate drive voltage is required to fully enhance SIHP21N80AEF-GE3, and what is its gate threshold range?

The SIHP21N80AEF-GE3 achieves its specified R_DS(on) of 0.220 Ω at V_GS = 10 V, and its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V at I_D = 250 μA. A minimum of 10 V gate drive is recommended for full enhancement and low conduction loss; operation below 6 V risks partial turn-on and increased heating. The SIHP21N80AEF-GE3 supports ±30 V maximum gate-source voltage, allowing robust noise margin in industrial environments.

SIHP21N80AEF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 16.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1511 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP21N80AEF-GE3 FAQ

1.How can I place an order for SIHP21N80AEF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP21N80AEF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP21N80AEF-GE3 reliable?

The price and inventory of SIHP21N80AEF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP21N80AEF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP21N80AEF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP21N80AEF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP21N80AEF-GE3?

SIHP21N80AEF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP21N80AEF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP21N80AEF-GE3?

For technical support, including SIHP21N80AEF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP21N80AEF-GE3 requirements.

6.How does Aetrix verify that SIHP21N80AEF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP21N80AEF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP21N80AEF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP21N80AEF-GE3?

All SIHP21N80AEF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP21N80AEF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP21N80AEF-GE3 part is unused and in its original packaging.

Return procedure for SIHP21N80AEF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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