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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP21N80AE-GE3

Name: SIHP21N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHP21N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP21N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP21N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 17.4A TO220AB

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Product details

Overview

SIHP21N80AE-GE3 from Vishay Siliconix is an 800 V, 17.4 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.205 Ω (typ.) at V_GS = 10 V, Q_g = 48 nC (typ.), and avalanche-rated E_AS = 127 mJ - optimized for high-voltage switching in PFC and SMPS stages.

For engineers reviewing the SIHP21N80AE-GE3 datasheet, SIHP21N80AE-GE3 pinout, SIHP21N80AE-GE3 application, or SIHP21N80AE-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), Co(er) = 43 pF for reduced switching loss, and robust 800 V V_DS rating with ±30 V gate tolerance.

Technical Context

This device employs planar stripe silicon technology to achieve stable high-voltage blocking with low gate charge and minimized output capacitance. Its 0.7 °C/W R_thJC enables high-power operation up to 179 W at T_C = 25 °C, while the integral body diode supports synchronous rectification and unclamped inductive switching.

The MOSFET delivers controlled dv/dt performance (70 V/ns at T_J = 125 °C) and is characterized for UIS reliability under repetitive conditions. Gate threshold voltage (2.0–4.0 V) and low I_DSS (≤1 μA at 800 V) ensure stable turn-on margin and leakage control in high-impedance gate drive circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports primary-side switching in 400 V AC-input PFC and telecom rectifiers without derating.
R_DS(on) typ	0.205 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 11 A DC, critical for thermal management in compact power supplies.
Q_g typ	48 nC - reduces gate drive power and allows use of lower-current drivers in high-frequency (>100 kHz) topologies.
E_AS	127 mJ - ensures reliable operation during transient overloads and inductive switching events without external snubbers.
C_oss(er)	43 pF - lowers energy loss per switching cycle (E_oss) and improves efficiency in hard-switched ZVS-limited designs.
T_J range	−55 to +150 °C - supports industrial and telecom environments with extended thermal cycling requirements.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and 1.4 W/°C linear derating above T_C = 25 °C.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; ±30 V absolute max rating prevents gate oxide damage during transients.
D (Drain)	High-side power terminal	Connected to TO-220 tab; electrically isolated from mounting surface unless heatsink is grounded - requires insulating washer if needed.
S (Source)	Reference node / return path	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery charge (Q_rr = 5–10 μC).

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	~10.3 Ω·nC - directly reduces total switching + conduction loss, enabling >96% efficiency in 3.5 kW PFC stages.
Avalanche energy rating	127 mJ single-pulse - eliminates need for external clamping in flyback and resonant LLC primary switches.
Co(er) = 43 pF	Reduces stored output capacitance energy by ~30% vs. legacy 800 V MOSFETs, lowering E_oss and improving light-load efficiency.
Body diode t_rr = 400–800 ns	Enables reliable freewheeling in bridge configurations without external Schottky catch diodes in medium-frequency SMPS.
Pb-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912 - suitable for green manufacturing programs.

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC converter operating at 100–300 kHz with 380–400 V DC bus and 3–5 kW output. IC Role / Device Role / Timing Role: High-side switch handling full line current; operates in continuous conduction mode (CCM) with forced-air cooling. Use Value: Low R_DS(on) minimizes conduction loss at high RMS current; low Q_g enables efficient gate driving at elevated frequency.	Use Scenario: -48 V telecom rectifier input stage converting 277 V AC to 400 V DC bus for downstream DC-DC conversion. IC Role / Device Role / Timing Role: Primary-side switching element in active clamp forward or phase-shifted full-bridge topology. Use Value: 800 V rating provides 20% margin over 640 V reflected transients; avalanche rating absorbs transformer leakage spikes.
Solar PV Inverter DC Link	Industrial Motor Drive Inverter
Use Scenario: DC link switching in string inverters with 1000 V nominal input and bidirectional energy flow. IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter leg; subjected to high dv/dt and partial-load regeneration. Use Value: 70 V/ns dv/dt rating ensures immunity to parasitic turn-on; low C_oss(er) reduces capacitive shoot-through losses during commutation.	Use Scenario: 3–7.5 kW variable-frequency drive feeding induction motors in HVAC or pump systems. IC Role / Device Role / Timing Role: Inverter bridge switch operating at 4–16 kHz PWM with regenerative braking pulses. Use Value: Robust UIS capability handles motor inductive kickback; 150 °C T_J rating supports sealed enclosure operation without forced cooling.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC converter operating at 100–300 kHz with 380–400 V DC bus and 3–5 kW output.

IC Role / Device Role / Timing Role: High-side switch handling full line current; operates in continuous conduction mode (CCM) with forced-air cooling.

Use Value: Low R_DS(on) minimizes conduction loss at high RMS current; low Q_g enables efficient gate driving at elevated frequency.

Use Scenario: -48 V telecom rectifier input stage converting 277 V AC to 400 V DC bus for downstream DC-DC conversion.

IC Role / Device Role / Timing Role: Primary-side switching element in active clamp forward or phase-shifted full-bridge topology.

Use Value: 800 V rating provides 20% margin over 640 V reflected transients; avalanche rating absorbs transformer leakage spikes.

Solar PV Inverter DC Link

Industrial Motor Drive Inverter

Use Scenario: DC link switching in string inverters with 1000 V nominal input and bidirectional energy flow.

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter leg; subjected to high dv/dt and partial-load regeneration.

Use Value: 70 V/ns dv/dt rating ensures immunity to parasitic turn-on; low C_oss(er) reduces capacitive shoot-through losses during commutation.

Use Scenario: 3–7.5 kW variable-frequency drive feeding induction motors in HVAC or pump systems.

IC Role / Device Role / Timing Role: Inverter bridge switch operating at 4–16 kHz PWM with regenerative braking pulses.

Use Value: Robust UIS capability handles motor inductive kickback; 150 °C T_J rating supports sealed enclosure operation without forced cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80Z	R_DS(on) = 0.33 Ω (higher), Q_g = 60 nC (higher), no published Co(er) value	Lower efficiency at high current; less suitable for >200 kHz PFC due to higher switching loss	Acceptable for cost-sensitive 50–100 kHz SMPS where thermal margin exists
IXFH20N80X	R_DS(on) = 0.22 Ω, Q_g = 52 nC, E_AS = 110 mJ (lower), TO-247 package	Larger footprint and higher R_thJC (0.85 °C/W); requires larger heatsink	Preferred when higher surge current handling is required, but SIHP21N80AE-GE3 offers better FOM in space-constrained TO-220 designs

Compared with STW20NK80Z and IXFH20N80X, the SIHP21N80AE-GE3 delivers superior figure-of-merit (R_DS(on) × Q_g) and lower effective output capacitance, enabling higher efficiency and smaller magnetics in high-frequency PFC and telecom rectifiers - especially where TO-220 footprint and thermal resistance (0.7 °C/W) are design constraints.

Availability

SIHP21N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHP21N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHP21N80AE-GE3 belongs to Vishay's E Series high-voltage Power MOSFET family, engineered specifically for high-efficiency, high-density AC-DC and DC-DC conversion in enterprise and infrastructure power systems.

FAQ

What is the maximum continuous drain current for SIHP21N80AE-GE3 at 100 °C case temperature?

The SIHP21N80AE-GE3 supports 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits imposed by the TO-220AB package's junction-to-case thermal resistance of 0.7 °C/W and ensures safe operation without exceeding 150 °C maximum junction temperature. The SIHP21N80AE-GE3 must be mounted on an adequately sized heatsink to maintain this rating.

Does SIHP21N80AE-GE3 have avalanche capability, and how is it rated?

Yes, the SIHP21N80AE-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 127 mJ under defined test conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3 A). This rating is validated per JEDEC standards and enables robust operation in flyback, forward, and LLC converters without external snubbers. The SIHP21N80AE-GE3 datasheet confirms repetitive avalanche capability with pulse width limited by junction temperature.

What is the typical gate charge profile of SIHP21N80AE-GE3, and how does it affect driver selection?

The SIHP21N80AE-GE3 has Q_g = 48 nC (typ.), Q_gs = 9 nC, and Q_gd = 22 nC at V_GS = 10 V and V_DS = 640 V. This low Q_gd/Q_g ratio (~46%) indicates strong Miller immunity, reducing risk of spurious turn-on. For 100 kHz operation, a 1-A peak gate driver suffices; the SIHP21N80AE-GE3 benefits from low-impedance gate traces (<1 Ω) to minimize ringing and switching delay.

How does the body diode performance of SIHP21N80AE-GE3 compare to external Schottky diodes in PFC applications?

The SIHP21N80AE-GE3 body diode exhibits V_SD = 1.2 V (typ.) at 11 A and T_J = 25 °C, with t_rr = 400–800 ns and Q_rr = 5–10 μC. While slower and higher-V_F than discrete Schottkys, its integrated nature simplifies layout and reduces component count in interleaved PFC where moderate reverse recovery is acceptable. The SIHP21N80AE-GE3 body diode is not recommended for synchronous rectification above 150 kHz without careful dead-time optimization.

Is SIHP21N80AE-GE3 compatible with standard TO-220 PCB footprints and thermal pads?

Yes, the SIHP21N80AE-GE3 uses the industry-standard TO-220AB outline with 2.54 mm lead pitch and 15.8 mm × 10.16 mm body dimensions. Its isolated drain tab aligns with common TO-220 thermal pad layouts. Mounting requires M3 screws and insulating shoulder washers if the heatsink is grounded. The SIHP21N80AE-GE3 complies with IPC-7351B footprint recommendations and supports reflow or wave soldering per Vishay's soldering guidelines (peak 260 °C for 10 s).

SIHP21N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 17.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 235mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1388 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 32W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP21N80AE-GE3 FAQ

1.How can I place an order for SIHP21N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP21N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP21N80AE-GE3 reliable?

The price and inventory of SIHP21N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP21N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP21N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP21N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP21N80AE-GE3?

SIHP21N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP21N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP21N80AE-GE3?

For technical support, including SIHP21N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP21N80AE-GE3 requirements.

6.How does Aetrix verify that SIHP21N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP21N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP21N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP21N80AE-GE3?

All SIHP21N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP21N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP21N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHP21N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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