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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP22N60AE-GE3

Name: SIHP22N60AE-GE3
Brand: Vishay Siliconix
SKU: SIHP22N60AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP22N60AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP22N60AE-GE3.pdf

Description:: MOSFET N-CH 600V 20A TO220AB

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Product details

Overview

SIHP22N60AE-GE3 from Vishay Siliconix is a 600 V, 20 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.156 Ω (typ.) at V_GS = 10 V, Q_g = 48 nC (typ.), and E_AS = 204 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHP22N60AE-GE3 datasheet, SIHP22N60AE-GE3 pinout, SIHP22N60AE-GE3 application, or SIHP22N60AE-GE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for ZVS/ZCS topologies, thermal resistance R_thJC = 0.7 °C/W, and body diode recovery performance (t_rr = 319 ns, Q_rr = 4.9 μC) in hard-switched converters.

Technical Context

This device employs planar VDMOS technology with optimized charge balance for reduced conduction and switching losses. Its 600 V V_DS rating supports 400 V DC bus designs with margin, while the 0.156 Ω R_DS(on) enables <1.5 W conduction loss at 11 A continuous drain current (T_C = 100 °C).

The ultra-low Q_g/Q_gd ratio (48 nC / 25 nC) improves switching efficiency in high-frequency SMPS, and the rated UIS capability ensures robustness against inductive load transients without external snubbers in motor drives and welding inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with 50 % safety margin in telecom rectifiers and PV inverters
R_DS(on) typ	0.156 Ω @ V_GS = 10 V - yields ≤1.9 W conduction loss at 11 A, enabling compact heatsink design
Q_g max	96 nC - determines gate driver power requirement; 48 nC typical enables use with low-power drivers like UCC27531
E_AS	204 mJ - specifies single-pulse unclamped inductive switching robustness for motor drive H-bridge legs
t_rr / Q_rr	319 ns / 4.9 μC - defines body diode reverse recovery behavior critical for synchronous rectification and LLC resonant control
R_thJC	0.7 °C/W - allows direct mounting to heatsink; enables 179 W dissipation at ΔT = 125 °C junction-to-case
I_D cont @ T_C=100°C	12 A - sets maximum continuous output current in thermally constrained enclosures (e.g., 1U server PSUs)

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 2.54 mm lead pitch, and JEDEC MS-001-AC compliant outline. Tab is electrically connected to drain for low-inductance heat path and simplified thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 1451 pF affects driver slew rate and EMI filtering needs
D (Drain)	Main power output terminal	Connected to heatsink tab; carries full load current and withstands 600 V blocking; requires creepage/clearance per IEC 62368-1
S (Source)	Reference node for gate drive	Common return for load current and gate driver ground; layout must minimize source inductance to avoid false turn-on during dI/dt events

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	7.47 Ω·nC - balances conduction and switching loss trade-off for 100–300 kHz PFC and LLC designs
Avalanche-rated (UIS)	204 mJ single-pulse energy - eliminates need for external clamping in inductive load switching (e.g., welder primary side)
Ultra-low Q_gd/Q_g ratio	25/48 = 0.52 - reduces Miller plateau time, improving dv/dt immunity and enabling faster turn-off in high-side configurations
Body diode t_rr < 640 ns	319 ns typical - minimizes commutation loss in synchronous buck and half-bridge topologies operating above 50 kHz
Pb-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's "Green" material standard (doc. 99912)

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW 48 V output telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage power switch handling 380–400 V DC input, switching at 150 kHz with ZVS-assisted turn-on. Use Value: Low Q_g and R_DS(on) reduce total losses by ≥12 % vs. legacy 650 V MOSFETs, improving system efficiency from 95.2 % to 96.1 % at full load.	Use Scenario: Boost PFC stage in 1U redundant server PSU operating at 65 kHz with interleaved dual-phase control. IC Role / Device Role / Timing Role: Fast-recovery N-channel switch managing 20 A peak inductor current per phase with bidirectional body diode conduction during zero-crossing. Use Value: 319 ns t_rr and 4.9 μC Q_rr limit diode recovery loss to <0.8 W per device, enabling thermal derating reduction of 15 °C at 70 °C ambient.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string-level 5 kW transformerless PV inverter using three-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg switch in T-type inverter leg, subjected to 600 V blocking and 12 A RMS current with 16 kHz PWM. Use Value: 204 mJ E_AS rating ensures reliable operation during grid fault-induced overcurrent transients without desaturation protection circuitry.	Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drive with field-oriented control and 8 kHz carrier frequency. IC Role / Device Role / Timing Role: Low-side switching element in 3-phase bridge, conducting continuous 12 A with 100 A/μs dI/dt during short-circuit events. Use Value: R_thJC = 0.7 °C/W enables direct heatsink mounting without thermal interface pads, reducing thermal resistance by 0.3 °C/W vs. SMD alternatives.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW 48 V output telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 380–400 V DC input, switching at 150 kHz with ZVS-assisted turn-on.

Use Value: Low Q_g and R_DS(on) reduce total losses by ≥12 % vs. legacy 650 V MOSFETs, improving system efficiency from 95.2 % to 96.1 % at full load.

Use Scenario: Boost PFC stage in 1U redundant server PSU operating at 65 kHz with interleaved dual-phase control.

IC Role / Device Role / Timing Role: Fast-recovery N-channel switch managing 20 A peak inductor current per phase with bidirectional body diode conduction during zero-crossing.

Use Value: 319 ns t_rr and 4.9 μC Q_rr limit diode recovery loss to <0.8 W per device, enabling thermal derating reduction of 15 °C at 70 °C ambient.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string-level 5 kW transformerless PV inverter using three-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg switch in T-type inverter leg, subjected to 600 V blocking and 12 A RMS current with 16 kHz PWM.

Use Value: 204 mJ E_AS rating ensures reliable operation during grid fault-induced overcurrent transients without desaturation protection circuitry.

Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drive with field-oriented control and 8 kHz carrier frequency.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase bridge, conducting continuous 12 A with 100 A/μs dI/dt during short-circuit events.

Use Value: R_thJC = 0.7 °C/W enables direct heatsink mounting without thermal interface pads, reducing thermal resistance by 0.3 °C/W vs. SMD alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60ND	R_DS(on) = 0.18 Ω (typ.), Q_g = 52 nC, no UIS rating specified	Lacks avalanche energy specification; requires external clamping in inductive loads	Prefer SIHP22N60AE-GE3 where unclamped inductive switching occurs (e.g., welding, motor start-up)
IXTH24N60L2	R_DS(on) = 0.17 Ω (typ.), Q_g = 40 nC, TO-247 package, higher R_thJC = 0.85 °C/W	Larger footprint and higher thermal resistance; better suited for forced-air-cooled industrial systems	Choose SIHP22N60AE-GE3 for space-constrained TO-220AB layouts with natural convection cooling

Compared with STP22NM60ND and IXTH24N60L2, SIHP22N60AE-GE3 delivers superior avalanche ruggedness and lower thermal resistance in a compact TO-220AB package - making it optimal for cost-sensitive, thermally constrained telecom and server power supplies requiring proven UIS performance.

Availability

SIHP22N60AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing sites.

Supply support for SIHP22N60AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The SIHP22N60AE-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-voltage switching in server, telecom, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current for SIHP22N60AE-GE3 at 100 °C case temperature?

The SIHP22N60AE-GE3 supports 12 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case thermal resistance (R_thJC = 0.7 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit. Exceeding this current requires active cooling or reduced ambient conditions.

Does SIHP22N60AE-GE3 have avalanche energy rating, and what is its value?

Yes, SIHP22N60AE-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 204 mJ under standardized test conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.8 A). This rating is confirmed in the Absolute Maximum Ratings section and validated per JEDEC JESD24-11, ensuring reliability in motor drive and welding applications.

What is the typical gate charge (Qg) and how does it impact driver selection for SIHP22N60AE-GE3?

The SIHP22N60AE-GE3 has a typical total gate charge (Q_g) of 48 nC at V_GS = 10 V and V_DS = 480 V. This value directly determines required gate driver peak current: for 100 ns turn-on time, ≥480 mA peak drive is needed. Drivers such as Texas Instruments UCC27531 (4-A peak) or ON Semiconductor NCP3420 (2-A peak) are compatible, provided layout minimizes gate loop inductance.

How does the body diode performance of SIHP22N60AE-GE3 compare to standard MOSFETs in synchronous rectification?

The SIHP22N60AE-GE3 features a fast-recovery body diode with t_rr = 319 ns (typ.) and Q_rr = 4.9 μC (typ.) at T_J = 25 °C, significantly lower than standard 600 V MOSFETs (often >1000 ns). This reduces commutation loss and EMI in synchronous buck and LLC converters. Its V_SD = 1.2 V at I_S = 11 A further lowers conduction loss during freewheeling phases.

Is SIHP22N60AE-GE3 RoHS-compliant and halogen-free?

Yes, SIHP22N60AE-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's internal Green standard (document 99912). The "-GE3" suffix explicitly denotes compliance with both requirements, and the device is manufactured at Vishay-qualified sites with full material declarations available upon request.

SIHP22N60AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1451 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP22N60AE-GE3 FAQ

1.How can I place an order for SIHP22N60AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP22N60AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP22N60AE-GE3 reliable?

The price and inventory of SIHP22N60AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP22N60AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP22N60AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP22N60AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP22N60AE-GE3?

SIHP22N60AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP22N60AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP22N60AE-GE3?

For technical support, including SIHP22N60AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP22N60AE-GE3 requirements.

6.How does Aetrix verify that SIHP22N60AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP22N60AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP22N60AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP22N60AE-GE3?

All SIHP22N60AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP22N60AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP22N60AE-GE3 part is unused and in its original packaging.

Return procedure for SIHP22N60AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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