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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP22N60AEL-GE3

Name: SIHP22N60AEL-GE3
Brand: Vishay Siliconix
SKU: SIHP22N60AEL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP22N60AEL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP22N60AEL-GE3.pdf

Description:: MOSFET N-CH 600V 21A TO220AB

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Product details

Overview

SIHP22N60AEL-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.155 Ω (typ) at V_GS = 10 V, Q_g = 41 nC (typ), and E_AS = 183 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHP22N60AEL-GE3 datasheet, SIHP22N60AEL-GE3 pinout, SIHP22N60AEL-GE3 application, or SIHP22N60AEL-GE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for ZVS/ZCS topologies, thermal resistance (R_thJC = 0.6 °C/W), and body diode recovery performance (t_rr = 285 ns typ).

Technical Context

This MOSFET employs planar stripe silicon technology with optimized charge balance for reduced conduction and switching losses. Its low C_iss (1757 pF) and ultra-low Q_gd/Q_g ratio (13/41 nC) support fast, controllable turn-on/turn-off transitions under hard-switching conditions up to 480 V drain voltage.

The device integrates an avalanche-rated body diode with t_rr = 285 ns and Q_rr = 4.1 μC, enabling reliable operation in inductive switching circuits without external snubbers. Junction temperature range of –55 °C to +150 °C supports industrial and renewable energy environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in PFC and SMPS.
R_DS(on) typ @ 10 V	0.155 Ω - enables <1.9 W conduction loss at 11 A continuous current, reducing heatsink requirements.
Q_g max	82 nC - determines gate driver power demand; low value allows use of cost-effective 1-A drivers in 100–300 kHz designs.
E_AS	183 mJ - ensures single-pulse unclamped inductive switching survivability without derating in motor drive or welding controls.
t_rr	285 ns (typ) - minimizes reverse recovery overshoot and EMI in bridge-leg configurations with synchronous rectification.
R_thJC	0.6 °C/W - enables direct mounting to heatsinks for >150 W dissipation without thermal interface material degradation.
C_iss	1757 pF - sets Miller capacitance-related delay; low value improves dV/dt immunity and reduces gate oscillation risk.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC-compliant footprint. Thermal path optimized via copper leadframe and direct die-to-tab bond.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires ≤9.1 Ω series resistance to limit peak current during switching.
D (Drain)	High-side power terminal	Connected to internal die backside and metal tab; must be electrically isolated from heatsink unless system ground referenced.
S (Source)	Power return and reference node	Serves as local ground for gate driver; layout must minimize inductance to prevent false turn-on from dI/dt coupling.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	6.36 Ω·nC - balances conduction and switching loss for optimal efficiency at 100–250 kHz in LLC resonant converters.
Avalanche energy rating (E_AS)	183 mJ - eliminates need for external clamping in flyback or forward converter primary switches.
Body diode Q_rr	4.1 μC (typ) - reduces diode-induced switching loss and voltage spike in half-bridge freewheeling paths.
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's "Green" material standard (doc# 99912).
Enhancement-mode operation	Zero conduction at V_GS = 0 V - ensures fail-safe off-state in power-up/power-down sequences.

Applications

Server Power Supply	Photovoltaic Inverter
Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage, high-current main switch handling 400 V DC input and delivering regulated 12 V output. Use Value: Low Q_g and R_DS(on) reduce total losses by 12 % vs. legacy 600 V MOSFETs, improving full-load efficiency to >96 %.	Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Fast-switching IGBT replacement in two-level or three-level NPC inverter legs. Use Value: Avalanche rating and robust body diode enable reliable operation during grid fault transients without additional protection circuitry.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: Inverter stage in 5–7.5 kW variable frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Half-bridge upper/lower switch operating at 8–16 kHz PWM with regenerative braking capability. Use Value: 150 °C max junction temperature and 0.6 °C/W R_thJC allow sustained 21 A operation in compact enclosures without forced air cooling.	Use Scenario: Resonant half-bridge switch in electronic ballasts driving 40–100 W T5/T8 fluorescent lamps. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) primary switch controlling lamp ignition and dimming via frequency modulation. Use Value: Low C_iss and precise Q_gd/Q_gs ratio ensure stable ZVS across wide load and temperature ranges, eliminating acoustic noise.

Server Power Supply

Photovoltaic Inverter

Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage, high-current main switch handling 400 V DC input and delivering regulated 12 V output.

Use Value: Low Q_g and R_DS(on) reduce total losses by 12 % vs. legacy 600 V MOSFETs, improving full-load efficiency to >96 %.

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Fast-switching IGBT replacement in two-level or three-level NPC inverter legs.

Use Value: Avalanche rating and robust body diode enable reliable operation during grid fault transients without additional protection circuitry.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: Inverter stage in 5–7.5 kW variable frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Half-bridge upper/lower switch operating at 8–16 kHz PWM with regenerative braking capability.

Use Value: 150 °C max junction temperature and 0.6 °C/W R_thJC allow sustained 21 A operation in compact enclosures without forced air cooling.

Use Scenario: Resonant half-bridge switch in electronic ballasts driving 40–100 W T5/T8 fluorescent lamps.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) primary switch controlling lamp ignition and dimming via frequency modulation.

Use Value: Low C_iss and precise Q_gd/Q_gs ratio ensure stable ZVS across wide load and temperature ranges, eliminating acoustic noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60ND	R_DS(on) = 0.18 Ω (typ), Q_g = 45 nC, no specified E_AS rating	Lacks avalanche energy specification; requires external clamping in inductive loads	Prefer SIHP22N60AEL-GE3 where unclamped inductive stress is present (e.g., welding, motor start).
IXTH24N60L2	R_DS(on) = 0.17 Ω (typ), Q_g = 52 nC, TO-247 package, higher R_thJC (0.85 °C/W)	Larger footprint and higher thermal resistance; suited for lower-frequency, higher-power systems	Choose SIHP22N60AEL-GE3 for space-constrained TO-220 designs requiring superior thermal performance at 21 A.

Compared with STP22NM60ND and IXTH24N60L2, SIHP22N60AEL-GE3 delivers the lowest R_DS(on) × Q_g FOM in TO-220AB, highest avalanche ruggedness, and best junction-to-case thermal transfer - making it optimal for high-density, high-reliability 600 V switching where layout area and thermal headroom are constrained.

Availability

SIHP22N60AEL-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIHP22N60AEL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The EL Series Power MOSFETs, including SIHP22N60AEL-GE3, were engineered for high-efficiency, high-voltage switching in telecom, server, and renewable energy systems - prioritizing low switching loss, avalanche survivability, and thermal robustness.

FAQ

What is the maximum continuous drain current for SIHP22N60AEL-GE3 at 100 °C case temperature?

The SIHP22N60AEL-GE3 supports 13 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within its 150 °C maximum junction temperature. The SIHP22N60AEL-GE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHP22N60AEL-GE3 have a fully rated avalanche capability?

Yes, the SIHP22N60AEL-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 183 mJ under defined test conditions (V_DD = 120 V, L = 28.2 mH, I_AS = 3.6 A). This rating is validated per JEDEC standards and enables robust operation in inductive switching without external protection. The SIHP22N60AEL-GE3 datasheet confirms this in both absolute maximum ratings and product summary sections.

What is the typical reverse recovery time (t_rr) of the body diode in SIHP22N60AEL-GE3?

The SIHP22N60AEL-GE3 body diode has a typical reverse recovery time (t_rr) of 285 ns at T_J = 25 °C, I_F = 11 A, di/dt = 100 A/μs, and V_R = 400 V. This value is measured and published in the device's Specifications table. The SIHP22N60AEL-GE3 uses a tailored body diode structure to minimize recovery tail current and associated switching loss in bridge configurations.

Is SIHP22N60AEL-GE3 compatible with standard TO-220 heatsinks?

Yes, the SIHP22N60AEL-GE3 uses the industry-standard TO-220AB package with a flat, isolated metal tab that mates directly with common TO-220 heatsinks. Its R_thJC of 0.6 °C/W assumes direct thermal contact between the tab and heatsink surface. The SIHP22N60AEL-GE3 does not require insulating pads unless system grounding mandates electrical isolation from the heatsink.

What gate voltage is required to fully enhance SIHP22N60AEL-GE3?

The SIHP22N60AEL-GE3 is specified for full enhancement at V_GS = 10 V, where R_DS(on) reaches its typical value of 0.155 Ω. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, but reliable saturation and low on-resistance require ≥10 V drive. The SIHP22N60AEL-GE3 is not a logic-level device and should not be driven directly from 3.3 V or 5 V microcontrollers without level-shifting.

SIHP22N60AEL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EL

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1757 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP22N60AEL-GE3 FAQ

1.How can I place an order for SIHP22N60AEL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP22N60AEL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP22N60AEL-GE3 reliable?

The price and inventory of SIHP22N60AEL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP22N60AEL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP22N60AEL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP22N60AEL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP22N60AEL-GE3?

SIHP22N60AEL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP22N60AEL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP22N60AEL-GE3?

For technical support, including SIHP22N60AEL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP22N60AEL-GE3 requirements.

6.How does Aetrix verify that SIHP22N60AEL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP22N60AEL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP22N60AEL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP22N60AEL-GE3?

All SIHP22N60AEL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP22N60AEL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP22N60AEL-GE3 part is unused and in its original packaging.

Return procedure for SIHP22N60AEL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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