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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP22N60E-E3

Name: SIHP22N60E-E3
Brand: Vishay Siliconix
SKU: SIHP22N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP22N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP22N60E-E3.pdf

Description:: MOSFET N-CH 600V 21A TO220AB

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Product details

Overview

SIHP22N60E-E3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.18 Ω at V_GS = 10 V, Q_g = 86 nC, and avalanche-rated (E_AS = 367 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHP22N60E-E3 datasheet, SIHP22N60E-E3 pinout, SIHP22N60E-E3 application, or SIHP22N60E-E3 equivalent, key selection criteria include its 600 V blocking voltage, 0.15 Ω typical R_DS(on), ultra-low gate charge, TO-220AB thermal performance (R_thJC = 0.55 °C/W), and UIS ruggedness-critical for hard-switched industrial and renewable energy inverters.

Technical Context

This MOSFET uses planar stripe silicon technology optimized for high-voltage switching with low FOM (R_DS(on) × Q_g). Its gate threshold voltage (2–4 V) ensures stable turn-on under wide V_GS margin, while the integral body diode supports synchronous rectification and inductive load commutation.

Dynamic parameters-including C_iss = 1920 pF, C_oss = 90 pF, and Cr_ss = 6 pF-are characterized at V_DS = 100 V and f = 1 MHz. Switching times (t_d(on) = 18–36 ns, t_f = 35–70 ns) are specified with R_g = 4.7 Ω and V_DD = 380 V, supporting >100 kHz operation in resonant and hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports primary-side switching in 400 V DC bus systems with 50 V margin for voltage spikes
R_DS(on) max @ 25 °C	0.18 Ω - Enables <1.9 W conduction loss at 11 A continuous drain current
Q_g max	86 nC - Reduces gate drive power and enables use with low-current drivers (e.g., 1 A peak)
E_AS	367 mJ - Withstands unclamped inductive switching events without failure (tested per JEDEC JESD24-1)
R_thJC	0.55 °C/W - Allows 227 W dissipation with ≤125 °C case-to-junction rise, enabling compact heatsink design
I_D continuous @ T_C = 100 °C	13 A - Specifies usable current in thermally constrained enclosures (e.g., sealed server PSUs)
V_GS(th)	2–4 V - Ensures reliable turn-on with standard 10 V gate drivers and immunity to noise-induced false triggering

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and 1.6 mm creepage/clearance per IEC 60950-1. Thermal pad on backside requires mechanical clamping and thermal interface material for optimal R_thJC.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; input capacitance (C_iss = 1920 pF) sets driver sizing requirement
D (Drain)	High-side switch node	Connected to TO-220AB metal tab; carries full load current and must be electrically isolated from heatsink unless using insulating washer
S (Source)	Reference node / return path	Common connection point for gate driver return, current sense resistor, and low-side circuitry; defines local ground reference

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	15.5 Ω·nC - Directly improves efficiency in both conduction and switching domains of high-frequency PFC stages
Avalanche energy rating (E_AS)	367 mJ - Eliminates need for external snubbers in flyback and LLC primary switches subjected to inductive kickback
Ultra-low Q_gd/Q_g ratio	24/86 ≈ 28 % - Minimizes Miller plateau duration, improving dV/dt immunity and reducing switching transition time
Body diode reverse recovery (Q_rr)	5.3 μC - Enables soft-recovery behavior in bridge-leg configurations, lowering EMI vs. fast-recovery diodes
100% UIS tested	Per JEDEC JESD24-1 - Guarantees robustness across production lot without screening derating

Applications

Server Power Supplies	Photovoltaic Inverters
Use Scenario: Primary-side switching in 3.3 kW telecom rectifier modules operating at 100 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: High-voltage N-channel switch in continuous conduction mode (CCM) boost PFC stage. Use Value: 0.15 Ω typical R_DS(on) reduces conduction loss by 22 % vs. legacy 0.23 Ω devices, improving full-load efficiency from 95.1 % to 95.6 %.	Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: 600 V hard-switched IGBT replacement in two-level inverter leg. Use Value: 367 mJ E_AS withstands DC-link overvoltage transients during islanding detection, eliminating external clamping circuits.
Fluorescent Ballast Lighting	Industrial Motor Drives
Use Scenario: Resonant half-bridge control in electronic ballasts driving 40–60 W lamps at 40–70 kHz. IC Role / Device Role / Timing Role: Low-loss switching element in series-resonant tank with ZVS capability. Use Value: 6 pF Cr_ss minimizes capacitive feedthrough during dead-time, ensuring clean zero-voltage switching and reducing EMI filter size by 30 %.	Use Scenario: Inverter output stage in 5–7.5 kW HVAC drives operating at 8 kHz PWM with 300 V DC bus. IC Role / Device Role / Timing Role: N-channel switch in 6-pack IGBT module replacement topology. Use Value: 13 A continuous current at T_C = 100 °C supports 100 % torque at rated speed without forced air, enabling fanless cabinet design.

Server Power Supplies

Photovoltaic Inverters

Use Scenario: Primary-side switching in 3.3 kW telecom rectifier modules operating at 100 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage N-channel switch in continuous conduction mode (CCM) boost PFC stage.

Use Value: 0.15 Ω typical R_DS(on) reduces conduction loss by 22 % vs. legacy 0.23 Ω devices, improving full-load efficiency from 95.1 % to 95.6 %.

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: 600 V hard-switched IGBT replacement in two-level inverter leg.

Use Value: 367 mJ E_AS withstands DC-link overvoltage transients during islanding detection, eliminating external clamping circuits.

Fluorescent Ballast Lighting

Industrial Motor Drives

Use Scenario: Resonant half-bridge control in electronic ballasts driving 40–60 W lamps at 40–70 kHz.

IC Role / Device Role / Timing Role: Low-loss switching element in series-resonant tank with ZVS capability.

Use Value: 6 pF Cr_ss minimizes capacitive feedthrough during dead-time, ensuring clean zero-voltage switching and reducing EMI filter size by 30 %.

Use Scenario: Inverter output stage in 5–7.5 kW HVAC drives operating at 8 kHz PWM with 300 V DC bus.

IC Role / Device Role / Timing Role: N-channel switch in 6-pack IGBT module replacement topology.

Use Value: 13 A continuous current at T_C = 100 °C supports 100 % torque at rated speed without forced air, enabling fanless cabinet design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60ND	R_DS(on) = 0.22 Ω (max), Q_g = 72 nC, E_AS = 290 mJ, TO-220FP package (lower PD = 130 W)	Lower power handling limits use in <1.5 kW designs; reduced avalanche margin affects reliability in unregulated DC bus systems	Prefer for cost-sensitive, lower-power lighting ballasts where thermal headroom exists
IXTH24N60L2	R_DS(on) = 0.19 Ω (max), Q_g = 105 nC, E_AS = 420 mJ, TO-247AC package (R_thJC = 0.45 °C/W)	Higher gate charge increases driver loss; larger TO-247 footprint requires PCB layout change but offers better thermal margin	Prefer for >3 kW solar inverters requiring extended avalanche endurance and higher continuous current (24 A @ T_C = 100 °C)

Compared with STP22NM60ND and IXTH24N60L2, SIHP22N60E-E3 provides optimal balance of low gate charge, proven 600 V ruggedness, and TO-220AB manufacturability-making it ideal for mid-power server PSUs and industrial PFC where layout compatibility and supply chain stability are critical.

Availability

SIHP22N60E-E3 is available at Aetrix Electronics and suitable for server and telecom power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHP22N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The E Series Power MOSFETs-including SIHP22N60E-E3-are engineered for high-voltage, high-frequency switching in server, telecom, and industrial power conversion, prioritizing low FOM and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for SIHP22N60E-E3 at 100 °C case temperature?

The SIHP22N60E-E3 supports 13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 21 A rating at T_C = 25 °C and assumes proper heatsinking with R_thJC = 0.55 °C/W. Exceeding this current risks junction overheating beyond 150 °C, triggering thermal shutdown or permanent damage.

Does SIHP22N60E-E3 have avalanche capability, and how is it validated?

Yes, SIHP22N60E-E3 is fully rated for unclamped inductive switching (UIS) with E_AS = 367 mJ at T_J = 25 °C. This is validated per JEDEC JESD24-1 test conditions (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 5.1 A) and 100 % production tested. The device's planar structure and optimized doping profile ensure consistent energy absorption without parameter shift after repeated stress.

What is the gate threshold voltage range for SIHP22N60E-E3, and why does it matter for drive circuit design?

The gate threshold voltage (V_GS(th)) for SIHP22N60E-E3 is 2–4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise immunity-preventing false triggering from transient coupling. Designers must ensure gate drive voltage exceeds 4 V minimum to guarantee full enhancement, especially at elevated temperatures where V_GS(th) decreases.

How does the body diode performance of SIHP22N60E-E3 compare to discrete fast recovery diodes in bridge configurations?

The SIHP22N60E-E3 body diode exhibits Q_rr = 5.3 μC and t_rr = 344 ns at T_J = 25 °C, IS = 11 A, and dI/dt = 100 A/μs. While slower than dedicated SiC Schottky diodes, its soft recovery characteristic reduces voltage overshoot and EMI in hard-commutated H-bridges. For synchronous rectification, its V_SD = 1.2 V forward drop is higher than SiC alternatives but avoids shoot-through risk inherent in external diode timing mismatches.

Is SIHP22N60E-E3 RoHS-compliant and halogen-free?

SIHP22N60E-E3 is lead (Pb)-free and RoHS-compliant per EU Directive 2011/65/EU, with exemption 7a. It is not halogen-free; for halogen-free compliance, specify SIHP22N60E-GE3 (same die, green molding compound). Both variants meet Vishay's material categorization per document 99912 and are qualified for industrial and telecom applications requiring strict chemical content control.

SIHP22N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP22N60E-E3 FAQ

1.How can I place an order for SIHP22N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP22N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP22N60E-E3 reliable?

The price and inventory of SIHP22N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP22N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHP22N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP22N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP22N60E-E3?

SIHP22N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP22N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP22N60E-E3?

For technical support, including SIHP22N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP22N60E-E3 requirements.

6.How does Aetrix verify that SIHP22N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP22N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP22N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHP22N60E-E3?

All SIHP22N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP22N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP22N60E-E3 part is unused and in its original packaging.

Return procedure for SIHP22N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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