Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP22N60EF-GE3

Name: SIHP22N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHP22N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP22N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHP22N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 19A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,834

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP22N60EF-GE3 from Vishay Siliconix is a 600 V, 19 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.158 Ω R_DS(on) at V_GS = 10 V, 96 nC total gate charge, and fast body diode with 113 ns typical reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHP22N60EF-GE3 datasheet, SIHP22N60EF-GE3 pinout, SIHP22N60EF-GE3 application, or SIHP22N60EF-GE3 equivalent, key selection criteria include avalanche-rated ruggedness (144 mJ E_AS), ultra-low Q_g/Q_gd ratio for hard-switched topologies, and validated dv/dt immunity (70 V/ns at T_J = 125 °C).

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage, medium-current switching with integrated fast-recovery body diode. Its low C_iss (1423 pF) and minimized C_rss/C_oss ratio support high-frequency operation while maintaining stable gate drive behavior under high dv/dt stress.

The device is characterized for unclamped inductive switching (UIS) and reverse recovery under controlled di/dt (400 A/μs) and voltage slew rates. Thermal design is enabled by R_thJC = 0.7 °C/W and SOA curves validated up to 10 ms pulse width at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in PFC and industrial SMPS
R_DS(on) typ	0.158 Ω at V_GS = 10 V - enables ≤ 20 W conduction loss at 11 A continuous drain current
Q_g max	96 nC - reduces gate driver power requirement and improves efficiency in 100–300 kHz hard-switched converters
E_AS	144 mJ - ensures single-pulse avalanche robustness during output short-circuit or transformer saturation events
trr typ	113 ns - minimizes commutation loss and ringing in bridge-leg configurations with synchronous rectification
R_thJC	0.7 °C/W - allows 179 W power dissipation with ≤ 125 °C junction rise above 25 °C case temperature
dv/dt rating	70 V/ns at T_J = 125 °C - sustains reliable operation in high-speed ZVS/ZCS resonant topologies without false turn-on

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.6 mm creepage distance, and Pb-free/halogen-free construction per Vishay S19-0120-Rev. A.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 1423 pF requires <1 Ω gate resistance for optimal switching speed
D (Drain)	High-side power terminal	Connected to heatsink via isolated tab; handles full 600 V blocking and 46 A pulsed current (I_DM)
S (Source)	Reference node / return path	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery charge (Q_rr = 0.7–1.4 μC)

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	15.2 Ω·nC - balances conduction and switching loss for optimal efficiency in 65–200 kHz PFC boost stages
Fast body diode	trr = 113 ns, Q_rr = 0.7 μC - reduces dead-time loss and EMI in half-bridge motor drives and LLC resonant converters
Avalanche energy rated	E_AS = 144 mJ - eliminates need for external snubbers in inductive load switching applications like welding inverters
Low C_rss/C_iss ratio	5 pF / 1423 pF ≈ 0.35 % - enhances Miller immunity and enables stable operation with high dv/dt in high-side switch configurations
High dv/dt immunity	70 V/ns at 125 °C - prevents spurious turn-on during fast voltage transients in solar PV inverter DC-link switching

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Active clamp forward or two-transistor forward converter in 48 V intermediate bus generation. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 380–400 V DC input with 100–200 kHz switching. Use Value: Low Q_g and fast body diode reduce gate drive loss and enable zero-voltage switching transitions, improving full-load efficiency by ≥0.8 %.	Use Scenario: Boost PFC stage in -48 V telecom rectifier systems operating at 100 kHz with 380 V DC output. IC Role / Device Role / Timing Role: Unidirectional switch in continuous conduction mode (CCM) boost topology. Use Value: 0.158 Ω R_DS(on) limits conduction loss to <2.5 W at 19 A, supporting >96 % PFC efficiency at 3 kW output.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter leg, subjected to rapid bus voltage reversal. Use Value: 70 V/ns dv/dt rating and 144 mJ E_AS prevent false triggering and withstand DC-link fault transients without failure.	Use Scenario: Inverter leg switch in 3-phase 400 V AC motor drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Medium-power IGBT replacement in 10–20 kW variable frequency drives. Use Value: Fast trr and low Q_rr reduce commutation loss by 35 % vs. standard MOSFETs, lowering heatsink requirements by one size grade.

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or two-transistor forward converter in 48 V intermediate bus generation.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 380–400 V DC input with 100–200 kHz switching.

Use Value: Low Q_g and fast body diode reduce gate drive loss and enable zero-voltage switching transitions, improving full-load efficiency by ≥0.8 %.

Use Scenario: Boost PFC stage in -48 V telecom rectifier systems operating at 100 kHz with 380 V DC output.

IC Role / Device Role / Timing Role: Unidirectional switch in continuous conduction mode (CCM) boost topology.

Use Value: 0.158 Ω R_DS(on) limits conduction loss to <2.5 W at 19 A, supporting >96 % PFC efficiency at 3 kW output.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter leg, subjected to rapid bus voltage reversal.

Use Value: 70 V/ns dv/dt rating and 144 mJ E_AS prevent false triggering and withstand DC-link fault transients without failure.

Use Scenario: Inverter leg switch in 3-phase 400 V AC motor drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Medium-power IGBT replacement in 10–20 kW variable frequency drives.

Use Value: Fast trr and low Q_rr reduce commutation loss by 35 % vs. standard MOSFETs, lowering heatsink requirements by one size grade.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60ND	R_DS(on) = 0.19 Ω, Q_g = 80 nC, no UIS rating, TO-220FP package (lower PD = 110 W)	Limited to lower-power SMPS (<1.5 kW); unsuitable for avalanche-prone welding or induction heating	Prefer SIHP22N60EF-GE3 where ruggedness, thermal headroom, or fast body diode is required
IXTH24N60L2	R_DS(on) = 0.17 Ω, Q_g = 105 nC, trr = 180 ns, TO-247 package, higher R_thJC = 0.55 °C/W	Better thermal performance but slower diode recovery increases switching loss in high-frequency PFC	Choose SIHP22N60EF-GE3 when optimizing for combined conduction + switching loss below 200 kHz

Compared with STP22NM60ND and IXTH24N60L2, SIHP22N60EF-GE3 offers superior avalanche ruggedness, faster body diode recovery, and balanced FOM for medium-power hard-switched topologies-making it optimal for telecom rectifiers and server PFC where reliability and efficiency co-constrain design.

Availability

SIHP22N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHP22N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The EF Series, including SIHP22N60EF-GE3, was engineered for high-efficiency, high-ruggedness switching in industrial and communications power conversion-emphasizing low FOM, fast body diode, and avalanche-rated operation.

FAQ

What is the maximum continuous drain current for SIHP22N60EF-GE3 at 100 °C case temperature?

The SIHP22N60EF-GE3 supports 12 A continuous drain current at T_C = 100 °C, derated linearly from 19 A at 25 °C using the specified 1.4 W/°C derating factor. This value is confirmed in the Absolute Maximum Ratings table of Vishay document 92244 and applies under steady-state thermal conditions with adequate heatsinking.

Does SIHP22N60EF-GE3 have a fully rated avalanche capability?

Yes, SIHP22N60EF-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 144 mJ under defined test conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.2 A). This single-pulse avalanche rating is guaranteed per Vishay's qualification and documented in the Absolute Maximum Ratings section of the datasheet.

What is the typical reverse recovery time (trr) of the body diode in SIHP22N60EF-GE3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHP22N60EF-GE3 is 113 ns, measured at T_J = 25 °C, I_F = I_S = 11 A, dI/dt = 100 A/μs, and V_R = 400 V. This value is specified in the "Drain-Source Body Diode Characteristics" table and reflects its fast-recovery EF Series optimization.

Is SIHP22N60EF-GE3 compatible with standard TO-220AB footprints and mounting hardware?

Yes, SIHP22N60EF-GE3 uses the industry-standard TO-220AB package with 2.54 mm lead pitch, 15.75 mm body width, and isolated drain tab. It mates with standard TO-220 heatsinks and mounting kits, and its lead (Pb)-free/halogen-free finish complies with JEDEC J-STD-020 moisture sensitivity level 1.

What gate drive voltage is required to achieve the specified RDS(on) of 0.158 Ω for SIHP22N60EF-GE3?

The 0.158 Ω typical R_DS(on) for SIHP22N60EF-GE3 is guaranteed at V_GS = 10 V, with ID = 11 A and T_J = 25 °C. The gate threshold voltage range is 2.0–4.0 V, but full enhancement and minimal on-resistance require ≥10 V drive; operation below 8 V results in significantly higher R_DS(on) and increased conduction loss.

SIHP22N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 182mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1423 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHP22N60EF-GE3 FAQ

1.How can I place an order for SIHP22N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP22N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP22N60EF-GE3 reliable?

The price and inventory of SIHP22N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP22N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP22N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP22N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP22N60EF-GE3?

SIHP22N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP22N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP22N60EF-GE3?

For technical support, including SIHP22N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP22N60EF-GE3 requirements.

6.How does Aetrix verify that SIHP22N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP22N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP22N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP22N60EF-GE3?

All SIHP22N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP22N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP22N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHP22N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …