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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP22N60E-GE3

Name: SIHP22N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP22N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP22N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP22N60E-GE3.pdf

Description:: MOSFET N-CH 600V 21A TO220AB

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Product details

Overview

SIHP22N60E-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.18 Ω (max) at V_GS = 10 V, Q_g = 86 nC (max), and avalanche-rated E_AS = 367 mJ - optimized for high-efficiency SMPS and PFC stages in telecom and server power supplies.

For engineers reviewing the SIHP22N60E-GE3 datasheet, SIHP22N60E-GE3 pinout, SIHP22N60E-GE3 application, or SIHP22N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, and robust unclamped inductive switching capability under 150 °C junction operation.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized gate oxide and body diode design to achieve balanced conduction and switching losses. Its 600 V V_DS rating supports universal input AC/DC front-end designs, while the 0.55 °C/W R_thJC enables high-power-density thermal management in forced-air-cooled systems.

The device delivers stable threshold voltage (V_GS(th) = 2–4 V) and low C_iss (1920 pF typ.) for predictable gate drive timing. Its dV/dt immunity (70 V/ns at T_J = 125 °C) and reverse recovery characteristics (Q_rr = 5.3 μC, t_rr = 344 ns) support reliable operation in hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with 50 % margin for transient overvoltage in PFC and LLC resonant converters
R_DS(on) max @ 25 °C	0.18 Ω - limits conduction loss to ≤ 44 W at 11 A continuous drain current in TO-220AB package
Q_g max	86 nC - reduces gate driver power demand and enables use of low-cost 1-A peak drivers in 100–300 kHz SMPS
E_AS single-pulse	367 mJ - sustains unclamped inductive switching events up to 5.1 A with L = 28.2 mH without failure
C_iss typ.	1920 pF - minimizes Miller effect and improves noise immunity in high-dV/dt environments
T_J range	−55 to +150 °C - ensures reliability across industrial ambient conditions and thermally constrained PCB layouts

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Thermal resistance R_thJC = 0.55 °C/W enables direct heatsink attachment via M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires <1.2 Ω gate resistor to limit ringing during 57 nC total charge transfer
D (Drain)	Main power output terminal	Connected to high-side switch node; electrically tied to metal tab - must be insulated from heatsink unless referenced to same potential
S (Source)	Power return and reference node	Serves as local ground for gate drive loop; low-inductance layout critical to suppress V_GS oscillation during fast dI/dt transitions

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	15.5 Ω·nC - enables higher efficiency than legacy 600 V MOSFETs in 100–200 kHz PFC boost stages
Avalanche energy rated (UIS)	367 mJ - eliminates need for external clamping circuits in flyback and forward converter primary switches
Ultra-low gate charge (Q_g)	57 nC typical - reduces gate driver losses by >35 % vs. comparable 600 V devices, improving system-level thermal budget
Low input capacitance (C_iss)	1920 pF - lowers Miller-induced turn-on risk in high-side configurations with fast dV/dt edges
Body diode Q_rr and t_rr	5.3 μC / 344 ns - supports ZVS-assisted soft-switching in phase-shifted full-bridge topologies

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) rectifiers with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage main switch handling 400 V DC input, operating at 200 kHz with synchronous rectification on secondary side. Use Value: Low R_DS(on) and Q_g reduce total losses by 1.8 W per device versus prior-generation 600 V MOSFETs, enabling 96.2 % peak efficiency.	Use Scenario: Boost PFC stage in −48 V telecom rectifier modules compliant with NEBS Level 3 environmental requirements. IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch managing 20 A peak line current at 65 kHz switching frequency. Use Value: Avalanche rating ensures field reliability during brownout-induced overcurrent transients without derating or oversizing.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters with 1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: Half-bridge upper-leg switch operating with 150 °C junction temperature under 45 °C ambient and 1.5 m/s airflow. Use Value: 0.55 °C/W R_thJC allows direct heatsink mounting without thermal interface pads, reducing BOM cost and assembly steps.	Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drives using space-vector PWM at 8 kHz carrier frequency. IC Role / Device Role / Timing Role: IGBT replacement in 600 V class drives requiring faster switching and lower gate drive complexity. Use Value: Body diode t_rr = 344 ns enables clean commutation with minimal shoot-through risk during dead-time transitions.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) rectifiers with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage main switch handling 400 V DC input, operating at 200 kHz with synchronous rectification on secondary side.

Use Value: Low R_DS(on) and Q_g reduce total losses by 1.8 W per device versus prior-generation 600 V MOSFETs, enabling 96.2 % peak efficiency.

Use Scenario: Boost PFC stage in −48 V telecom rectifier modules compliant with NEBS Level 3 environmental requirements.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch managing 20 A peak line current at 65 kHz switching frequency.

Use Value: Avalanche rating ensures field reliability during brownout-induced overcurrent transients without derating or oversizing.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters with 1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: Half-bridge upper-leg switch operating with 150 °C junction temperature under 45 °C ambient and 1.5 m/s airflow.

Use Value: 0.55 °C/W R_thJC allows direct heatsink mounting without thermal interface pads, reducing BOM cost and assembly steps.

Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drives using space-vector PWM at 8 kHz carrier frequency.

IC Role / Device Role / Timing Role: IGBT replacement in 600 V class drives requiring faster switching and lower gate drive complexity.

Use Value: Body diode t_rr = 344 ns enables clean commutation with minimal shoot-through risk during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60ND	R_DS(on) = 0.19 Ω (max), Q_g = 95 nC, TO-220FP package with non-isolated tab	Higher gate charge increases driver loss; non-isolated tab requires insulating washer for heatsink mounting	Prefer SIHP22N60E-GE3 when thermal interface simplicity and lower switching loss are prioritized
IXTH24N60L2	R_DS(on) = 0.17 Ω (max), Q_g = 105 nC, TO-247AC package with higher R_thJC = 0.45 °C/W	Larger footprint and higher gate drive power demand; superior thermal resistance but increased layout area	Choose SIHP22N60E-GE3 for space-constrained TO-220 designs where 0.18 Ω R_DS(on) meets efficiency targets

Compared with STP22NM60ND and IXTH24N60L2, SIHP22N60E-GE3 offers the lowest R_DS(on) × Q_g FOM among TO-220-packaged 600 V MOSFETs, delivering optimal balance of conduction efficiency, switching speed, and thermal interface simplicity for mid-power industrial and telecom power stages.

Availability

SIHP22N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHP22N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The E Series Power MOSFET product line was designed for high-efficiency, high-voltage switching in server, telecom, and renewable energy power conversion - emphasizing low FOM, rugged avalanche performance, and consistent parametric stability across temperature.

FAQ

What is the maximum continuous drain current rating for SIHP22N60E-GE3 at 100 °C case temperature?

The SIHP22N60E-GE3 has a maximum continuous drain current (I_D) of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating from the 21 A value at 25 °C case temperature, based on the device's 1.8 W/°C linear derating factor and TO-220AB package thermal characteristics. Engineers must verify actual board-level thermal performance before operating near this limit.

Does SIHP22N60E-GE3 support logic-level gate drive?

No, SIHP22N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, but it is characterized for R_DS(on) at V_GS = 10 V, and full enhancement requires ≥8 V. It is incompatible with 3.3 V or 5 V microcontroller outputs without level-shifting or gate driver amplification. The SIHP22N60E-GE3 datasheet does not specify performance at V_GS = 5 V.

What is the significance of the "-GE3" suffix in SIHP22N60E-GE3?

The "-GE3" suffix indicates that SIHP22N60E-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's green initiative. It denotes the same die and TO-220AB package as the "-E3" variant (lead-free only), with added halogen-free molding compound. Both variants share identical electrical specifications, thermal ratings, and mechanical dimensions.

How is the avalanche energy rating of SIHP22N60E-GE3 validated?

The SIHP22N60E-GE3 is rated for single-pulse avalanche energy (E_AS) of 367 mJ, tested per JEDEC standard JESD24-11 under defined conditions: V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.1 A. This rating confirms ruggedness against inductive switching transients but does not imply unlimited repetitive avalanche capability - designers must avoid repeated UIS events in normal operation.

Can SIHP22N60E-GE3 replace older 600 V MOSFETs like IRFP460 in existing designs?

SIHP22N60E-GE3 can serve as a functional upgrade to IRFP460 in many applications due to lower R_DS(on) (0.18 Ω vs. 0.27 Ω) and reduced Q_g (86 nC vs. 180 nC), but it is not a drop-in replacement. Differences in gate charge profile, body diode recovery (Q_rr = 5.3 μC vs. 13.2 μC), and SOA curves require verification of gate drive strength, snubber design, and thermal margin. Layout changes may be needed to accommodate revised switching behavior.

SIHP22N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: -

SIHP22N60E-GE3 FAQ

1.How can I place an order for SIHP22N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP22N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP22N60E-GE3 reliable?

The price and inventory of SIHP22N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP22N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP22N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP22N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP22N60E-GE3?

SIHP22N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP22N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP22N60E-GE3?

For technical support, including SIHP22N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP22N60E-GE3 requirements.

6.How does Aetrix verify that SIHP22N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP22N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP22N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP22N60E-GE3?

All SIHP22N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP22N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP22N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP22N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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