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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP22N60EL-GE3

Name: SIHP22N60EL-GE3
Brand: Vishay Siliconix
SKU: SIHP22N60EL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP22N60EL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP22N60EL-GE3.pdf

Description:: MOSFET N-CH 600V 21A TO220AB

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Product details

Overview

SIHP22N60EL-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.171 Ω (typ) at V_GS = 10 V, Q_g = 74 nC (max), and avalanche-rated E_AS = 286 mJ - designed for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHP22N60EL-GE3 datasheet, SIHP22N60EL-GE3 pinout, SIHP22N60EL-GE3 application, or SIHP22N60EL-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), robust dV/dt immunity (62 V/ns), and validated unclamped inductive switching performance under 150 °C junction conditions.

Technical Context

This MOSFET employs planar silicon technology optimized for hard-switched 600 V applications, with gate charge profile engineered to balance turn-on speed and EMI control. Its C_iss = 1690 pF (typ) and C_oss = 95 pF (typ) support stable operation in continuous conduction mode (CCM) PFC and resonant LLC topologies.

The device integrates an intrinsic body diode rated for I_S = 21 A continuous and t_rr = 365 ns (typ), enabling reliable freewheeling in bridge-leg configurations without external diode supplementation in moderate-frequency (<100 kHz) designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for surge and ringing
R_DS(on) typ @ 10 V	0.171 Ω - enables <1.9 W conduction loss at 11 A, critical for thermal management in compact SMPS
Q_g max	74 nC - determines gate driver current requirement (~7.4 mA avg @ 100 kHz, 10 V swing)
E_AS	286 mJ - guarantees single-pulse ruggedness during output short-circuit or startup fault events
dV/dt immunity	62 V/ns - suppresses false turn-on in high-dI/dt half-bridge leg commutation
T_J range	–55 to +150 °C - qualified for industrial ambient environments up to 85 °C with derated current
R_thJC	0.55 °C/W - allows direct heatsink mounting for ≤125 W dissipation at ΔT = 69 °C

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting. Tab electrically connected to drain; requires insulating washer when mounted to grounded heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 1690 pF shapes Miller plateau timing
D (Drain)	High-side power terminal	Connected to TO-220 tab; carries full load current and withstands 600 V blocking; requires creepage clearance ≥4 mm
S (Source)	Reference node / return path	Common reference for gate drive and current sensing; low-inductance layout essential to minimize V_GS noise coupling

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	12.7 Ω·nC - reduces combined switching + conduction losses vs. legacy 600 V MOSFETs
Avalanche energy rating	286 mJ - eliminates need for external snubbers in inductive load switching
Body diode t_rr	365 ns - limits reverse recovery overshoot and associated EMI in bridge configurations
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and Vishay's "Green" material policy

Applications

Server SMPS	Telecom Rectifiers
Use Scenario: Primary-side switching in 1–3 kW AC-DC front-end power supplies with active PFC and LLC resonant conversion. IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC and LLC half-bridge legs; operates at 65–100 kHz with hard-switched or ZVS transitions. Use Value: Low Q_g and C_oss reduce gate drive loss and improve ZVS initiation margin; 600 V rating accommodates 400 V nominal DC bus with transient headroom.	Use Scenario: High-density 48 V output rectification in -48 V telecom systems using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier (with external gate driver) or primary-side switch in forward-derived topologies. Use Value: R_DS(on) = 0.171 Ω minimizes conduction loss at 20+ A loads; TO-220AB mechanical robustness supports automated through-hole assembly in high-volume production.
HID Lighting Ballasts	Solar PV Inverters
Use Scenario: Resonant half-bridge driver for electronic ballasts powering 70–400 W metal halide lamps. IC Role / Device Role / Timing Role: Main switching transistor in series-resonant tank circuit; switched at 200–500 kHz with zero-current switching (ZCS). Use Value: Avalanche rating ensures reliability during lamp ignition transients; low C_oss improves resonant frequency stability across temperature.	Use Scenario: DC link switching in string inverters (1–5 kW) converting photovoltaic array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Boost stage switch in MPPT circuitry and H-bridge inverter leg for transformerless topologies. Use Value: 150 °C T_J rating supports operation in outdoor enclosures; dV/dt immunity prevents spurious turn-on during fast grid voltage transitions.

Server SMPS

Telecom Rectifiers

Use Scenario: Primary-side switching in 1–3 kW AC-DC front-end power supplies with active PFC and LLC resonant conversion.

IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC and LLC half-bridge legs; operates at 65–100 kHz with hard-switched or ZVS transitions.

Use Value: Low Q_g and C_oss reduce gate drive loss and improve ZVS initiation margin; 600 V rating accommodates 400 V nominal DC bus with transient headroom.

Use Scenario: High-density 48 V output rectification in -48 V telecom systems using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier (with external gate driver) or primary-side switch in forward-derived topologies.

Use Value: R_DS(on) = 0.171 Ω minimizes conduction loss at 20+ A loads; TO-220AB mechanical robustness supports automated through-hole assembly in high-volume production.

HID Lighting Ballasts

Solar PV Inverters

Use Scenario: Resonant half-bridge driver for electronic ballasts powering 70–400 W metal halide lamps.

IC Role / Device Role / Timing Role: Main switching transistor in series-resonant tank circuit; switched at 200–500 kHz with zero-current switching (ZCS).

Use Value: Avalanche rating ensures reliability during lamp ignition transients; low C_oss improves resonant frequency stability across temperature.

Use Scenario: DC link switching in string inverters (1–5 kW) converting photovoltaic array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Boost stage switch in MPPT circuitry and H-bridge inverter leg for transformerless topologies.

Use Value: 150 °C T_J rating supports operation in outdoor enclosures; dV/dt immunity prevents spurious turn-on during fast grid voltage transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60ND	R_DS(on) = 0.19 Ω (typ), Q_g = 65 nC, no UIS rating	Lacks avalanche ruggedness; requires external clamping in inductive circuits	Prefer SIHP22N60EL-GE3 where unclamped inductive stress is present
IXFH22N60P	R_DS(on) = 0.22 Ω (typ), Q_g = 85 nC, R_thJC = 0.65 °C/W	Higher conduction loss and thermal resistance; lower dV/dt immunity (50 V/ns)	SIHP22N60EL-GE3 offers superior efficiency and thermal performance in space-constrained designs

Compared with STP22NM60ND and IXFH22N60P, SIHP22N60EL-GE3 delivers the lowest R_DS(on) × Q_g FOM among 22 A/600 V MOSFETs, verified avalanche capability, and tighter dV/dt immunity - making it optimal for high-reliability, high-efficiency PFC and resonant converter stages.

Availability

SIHP22N60EL-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, HID lighting ballasts, and solar PV inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHP22N60EL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The EL Series Power MOSFETs are engineered for high-efficiency, high-reliability switch-mode power conversion - targeting telecom rectifiers, server PSUs, lighting ballasts, and renewable energy inverters where ruggedness and low FOM are critical.

FAQ

What is the maximum continuous drain current rating for SIHP22N60EL-GE3 at 100 °C case temperature?

The SIHP22N60EL-GE3 has a continuous drain current rating of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermal design calculations alongside R_thJC = 0.55 °C/W to ensure T_J ≤ 150 °C under actual operating conditions. The SIHP22N60EL-GE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHP22N60EL-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, the SIHP22N60EL-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 286 mJ, tested per JEDEC JESD24-11 with V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.5 A. This rating is validated across the full –55 to +150 °C junction temperature range and confirms robustness against inductive switching faults without external protection. The SIHP22N60EL-GE3 datasheet specifies this as a repetitive rating with pulse width limited by maximum junction temperature.

What is the typical gate threshold voltage (V_GS(th)) range for SIHP22N60EL-GE3, and why does it matter for drive circuit design?

The SIHP22N60EL-GE3 has a gate threshold voltage range of 3 V to 5 V (min to max) at I_D = 250 μA. This defines the minimum gate voltage needed to initiate conduction and impacts noise immunity and drive margin. Because the SIHP22N60EL-GE3 is not a logic-level device, a 10 V gate drive is required to achieve R_DS(on) = 0.171 Ω; operating near V_GS(th) risks incomplete turn-on and excessive conduction loss. Drive circuits must ensure clean, well-regulated 10 V gate swings.

How does the body diode performance of SIHP22N60EL-GE3 compare to standard FRDs in PFC applications?

The SIHP22N60EL-GE3 body diode has t_rr = 365 ns and Q_rr = 5.8 μC at T_J = 25 °C, which is slower than dedicated fast recovery diodes but sufficient for 65–100 kHz PFC operation where reverse recovery is managed via zero-current switching. Its V_SD = 1.2 V at I_S = 11 A provides predictable forward drop, and the integrated structure eliminates PCB footprint and parasitic inductance of discrete diodes. For the SIHP22N60EL-GE3, this trade-off favors simplicity and cost in non-critical recovery scenarios.

Is SIHP22N60EL-GE3 compatible with lead-free reflow soldering processes?

Yes, the SIHP22N60EL-GE3 is qualified for lead-free soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings. It meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements and is marked "-GE3" to indicate lead (Pb)-free and halogen-free construction per Vishay's Green policy. The SIHP22N60EL-GE3 TO-220AB package uses matte tin plating on leads and complies with RoHS 2011/65/EU directives.

SIHP22N60EL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 197mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP22N60EL-GE3 FAQ

1.How can I place an order for SIHP22N60EL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP22N60EL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP22N60EL-GE3 reliable?

The price and inventory of SIHP22N60EL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP22N60EL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP22N60EL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP22N60EL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP22N60EL-GE3?

SIHP22N60EL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP22N60EL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP22N60EL-GE3?

For technical support, including SIHP22N60EL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP22N60EL-GE3 requirements.

6.How does Aetrix verify that SIHP22N60EL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP22N60EL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP22N60EL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP22N60EL-GE3?

All SIHP22N60EL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP22N60EL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP22N60EL-GE3 part is unused and in its original packaging.

Return procedure for SIHP22N60EL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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