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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP22N60S-E3

Name: SIHP22N60S-E3
Brand: Vishay Siliconix
SKU: SIHP22N60S-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP22N60S-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP22N60S-E3.pdf

Description:: MOSFET N-CH 600V 22A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP22N60S-E3 from Vishay Siliconix is a 600 V, 22 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring R_DS(on) = 0.190 Ω at V_GS = 10 V, Q_g = 98 nC max, and 100 % avalanche tested for ruggedness. It serves as a primary switching device in high-voltage PFC stages and hard-switched DC-DC converters.

For engineers reviewing the SIHP22N60S-E3 datasheet, SIHP22N60S-E3 pinout, SIHP22N60S-E3 application, or SIHP22N60S-E3 equivalent, key selection criteria include its dV/dt ruggedness (37 V/ns), low gate charge, ultra-low R_DS(on), and suitability for industrial UPS and solar inverter half-bridge legs requiring reliable unclamped inductive switching.

Technical Context

This MOSFET belongs to Vishay's S Series Generation One platform, optimized for high-efficiency, high-reliability hard-switching applications. Its design emphasizes low conduction loss (R_DS(on) × Q_g figure-of-merit) and robust transient immunity, with confirmed dV/dt rating of 37 V/ns at T_J = 125 °C and reverse diode dV/dt capability of 5.3 V/ns.

The device integrates a fast-recovery body diode (t_rr = 462–690 ns, Q_rr = 8.3–16 μC) and is rated for repetitive avalanche energy (E_AR = 25 mJ), enabling operation in circuits with inductive load transients without external snubbers in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for surge and ringing
R_DS(on) max @ 25 °C	0.190 Ω - enables ≤ 95 W conduction loss at 22 A continuous drain current
Q_g max	110 nC - determines gate drive power requirement and switching speed in 100 kHz–500 kHz topologies
I_D continuous @ T_C = 100 °C	13 A - defines thermal-limited output capacity with standard heatsink mounting
E_AS single-pulse	690 mJ - quantifies unclamped inductive switching robustness without failure
dV/dt ruggedness	37 V/ns - ensures immunity to parasitic turn-on during high-slew-rate voltage transitions
T_J operating range	−55 to +150 °C - supports extended-temperature industrial and telecom environments

Pinout & Package

Package: TO-220AB, through-hole, isolated tab (drain-connected), 3-terminal configuration with industry-standard footprint and thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires <110 nC total charge for full enhancement
D (Drain)	High-side power terminal	Connected to heat sink via isolated tab; carries full load current and withstands 600 V blocking
S (Source)	Reference and return path	Common node for gate drive return and current sensing; ties to power ground in low-side switch configurations

Key Features

Feature	Design Value
100 % avalanche tested	Guarantees single-pulse E_AS ≥ 690 mJ and repetitive E_AR ≥ 25 mJ per unit
Ultra-low R_DS(on) × Q_g	Figure-of-merit ≤ 18.6 Ω·nC - balances conduction and switching losses in high-frequency PFC
dV/dt ruggedness	37 V/ns at T_J = 125 °C - prevents false triggering under fast-rising drain transients
Body diode t_rr & Q_rr	t_rr = 462–690 ns, Q_rr = 8.3–16 μC - reduces switching loss and EMI in synchronous rectification and bridge legs
Lead (Pb)-free construction	E3 suffix indicates RoHS-compliant termination and packaging per JEDEC J-STD-020

Applications

PFC Power Supply Stages	Solar Inverters
Use Scenario: Boost converter in front-end AC/DC conversion for server PSUs and industrial power supplies. IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) boost topology. Use Value: Low R_DS(on) minimizes conduction loss at 22 A RMS; high dV/dt rating suppresses false turn-on during zero-crossing transitions.	Use Scenario: DC-link switching stage in string inverters converting photovoltaic array output to grid-compatible AC. IC Role / Device Role / Timing Role: Upper-leg switch in two-level inverter H-bridge with 600 V DC bus. Use Value: Avalanche rating ensures reliability during IGBT/MOSFET shoot-through fault conditions; TO-220AB facilitates direct heatsink mounting in compact enclosures.
UPS Systems	Motor Control Drives
Use Scenario: Online double-conversion UPS where battery-backed DC bus switches into inverter stage during mains failure. IC Role / Device Role / Timing Role: Primary switching transistor in high-efficiency DC-AC inverter stage. Use Value: 13 A continuous current at 100 °C case temperature supports sustained 3 kVA output; low Q_g enables efficient 20–50 kHz PWM control.	Use Scenario: Inverter leg in HVAC compressors and industrial servo drives operating from 380–480 V AC mains. IC Role / Device Role / Timing Role: Hard-switched power switch in three-phase voltage-source inverter (VSI). Use Value: Body diode Q_rr < 16 μC limits reverse recovery loss during commutation; R_thJC = 0.5 °C/W enables thermal management with minimal heatsink mass.

PFC Power Supply Stages

Solar Inverters

Use Scenario: Boost converter in front-end AC/DC conversion for server PSUs and industrial power supplies.

IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) boost topology.

Use Value: Low R_DS(on) minimizes conduction loss at 22 A RMS; high dV/dt rating suppresses false turn-on during zero-crossing transitions.

Use Scenario: DC-link switching stage in string inverters converting photovoltaic array output to grid-compatible AC.

IC Role / Device Role / Timing Role: Upper-leg switch in two-level inverter H-bridge with 600 V DC bus.

Use Value: Avalanche rating ensures reliability during IGBT/MOSFET shoot-through fault conditions; TO-220AB facilitates direct heatsink mounting in compact enclosures.

UPS Systems

Motor Control Drives

Use Scenario: Online double-conversion UPS where battery-backed DC bus switches into inverter stage during mains failure.

IC Role / Device Role / Timing Role: Primary switching transistor in high-efficiency DC-AC inverter stage.

Use Value: 13 A continuous current at 100 °C case temperature supports sustained 3 kVA output; low Q_g enables efficient 20–50 kHz PWM control.

Use Scenario: Inverter leg in HVAC compressors and industrial servo drives operating from 380–480 V AC mains.

IC Role / Device Role / Timing Role: Hard-switched power switch in three-phase voltage-source inverter (VSI).

Use Value: Body diode Q_rr < 16 μC limits reverse recovery loss during commutation; R_thJC = 0.5 °C/W enables thermal management with minimal heatsink mass.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60FD	600 V, 22 A, R_DS(on) = 0.22 Ω, Q_g = 85 nC, D²PAK package	Higher R_DS(on) increases conduction loss; lower Q_g improves switching efficiency but lacks same avalanche rating	Preferred where PCB space allows surface-mount layout and gate drive is optimized for lower Q_g
IXTH22N60L2	600 V, 22 A, R_DS(on) = 0.20 Ω, Q_g = 105 nC, TO-247 package	Larger TO-247 offers better thermal performance (R_thJC = 0.45 °C/W) but higher cost and board area	Selected when junction temperature must stay below 135 °C under sustained 15 A load with limited heatsinking

Compared with STP22NM60FD and IXTH22N60L2, the SIHP22N60S-E3 delivers the lowest R_DS(on) in TO-220AB form factor and highest verified E_AR, making it optimal for cost-sensitive, thermally constrained 600 V hard-switching applications where leaded mounting is required.

Availability

SIHP22N60S-E3 is available at Aetrix Electronics and suitable for PFC power supply stages, solar inverters, and UPS systems requiring stable component supply, long-term industrial lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for SIHP22N60S-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The SIHP22N60S-E3 belongs to Vishay's S Series Generation One power MOSFET family, engineered for high-efficiency, high-reliability hard-switching applications including industrial power conversion and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHP22N60S-E3 at 100 °C case temperature?

The SIHP22N60S-E3 has a maximum continuous drain current (I_D) of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to junction-to-case thermal resistance (R_thJC = 0.5 °C/W) and ensures safe operation within the −55 to +150 °C junction temperature range. The SIHP22N60S-E3 must be mounted on an appropriately sized heatsink to maintain this limit.

Does SIHP22N60S-E3 have avalanche capability, and is it tested per unit?

Yes, the SIHP22N60S-E3 is 100 % avalanche tested per unit, with a guaranteed single-pulse avalanche energy (E_AS) of 690 mJ and repetitive avalanche energy (E_AR) of 25 mJ. This testing validates ruggedness under unclamped inductive switching conditions, a critical requirement for reliability in PFC and motor drive applications. The SIHP22N60S-E3 datasheet explicitly confirms this qualification.

What is the gate threshold voltage range for SIHP22N60S-E3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHP22N60S-E3 is specified from 2.0 V to 4.0 V at I_D = 250 μA. This range confirms compatibility with standard 10 V gate drivers, ensuring full enhancement well above threshold. Drive circuits must supply ≥10 V to achieve the rated R_DS(on) of 0.190 Ω; the SIHP22N60S-E3 is not a logic-level device and requires dedicated gate drive voltage.

How does the body diode performance of SIHP22N60S-E3 compare to standard rectifiers in bridge configurations?

The SIHP22N60S-E3 body diode exhibits t_rr = 462–690 ns and Q_rr = 8.3–16 μC at T_J = 25 °C, significantly faster than general-purpose rectifiers. This enables reduced switching loss and lower EMI in synchronous or quasi-resonant topologies. While not intended as a primary rectifier, the SIHP22N60S-E3 body diode supports freewheeling in half-bridge and LLC resonant converters without external diode substitution in many designs.

Is SIHP22N60S-E3 RoHS-compliant, and what does the "E3" suffix indicate?

Yes, the SIHP22N60S-E3 is RoHS-compliant. The "E3" suffix denotes lead (Pb)-free termination and packaging per JEDEC J-STD-020 moisture sensitivity level (MSL) standards. Vishay confirms compliance with EU RoHS Directive 2011/65/EU and China RoHS, and the SIHP22N60S-E3 is suitable for automated reflow soldering processes up to 260 °C peak temperature.

SIHP22N60S-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 190mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 2810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP22N60S-E3 FAQ

1.How can I place an order for SIHP22N60S-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP22N60S-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP22N60S-E3 reliable?

The price and inventory of SIHP22N60S-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP22N60S-E3 is usually 5 days.

3.What payment methods are accepted for SIHP22N60S-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP22N60S-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP22N60S-E3?

SIHP22N60S-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP22N60S-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP22N60S-E3?

For technical support, including SIHP22N60S-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP22N60S-E3 requirements.

6.How does Aetrix verify that SIHP22N60S-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP22N60S-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP22N60S-E3 meets industry standards.

7.What is the process for return or replacement of SIHP22N60S-E3?

All SIHP22N60S-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP22N60S-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP22N60S-E3 part is unused and in its original packaging.

Return procedure for SIHP22N60S-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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