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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP22N65E-GE3

Name: SIHP22N65E-GE3
Brand: Vishay Siliconix
SKU: SIHP22N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP22N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP22N65E-GE3.pdf

Description:: MOSFET N-CH 650V 22A TO220AB

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Product details

Overview

SIHP22N65E-GE3 from Vishay Siliconix is a 650 V, 22 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.18 Ω (max) at V_GS = 10 V, Q_g = 110 nC (max), and E_AS = 691 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHP22N65E-GE3 datasheet, SIHP22N65E-GE3 pinout, SIHP22N65E-GE3 application, or SIHP22N65E-GE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for ZVS/ZCS compatibility, thermal resistance (R_thJC = 0.55 °C/W), and RoHS-compliant/halogen-free construction.

Technical Context

This 650 V superjunction MOSFET uses charge-balanced trench technology to achieve low R_DS(on) × Q_g figure-of-merit (FOM), enabling reduced conduction and switching losses in hard-switched topologies. Its integral body diode supports continuous 22 A source-drain current with t_rr = 400 ns and Q_rr = 5.9 μC at 25 °C.

The device is rated for repetitive unclamped inductive switching (UIS) up to 691 mJ and operates across -55 °C to +150 °C junction temperature range. Gate threshold voltage (V_GS(th)) is 2–4 V, ensuring robust turn-on margin with standard 10 V gate drivers while maintaining low leakage (I_DSS ≤ 1 μA at 650 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with ≥30 % safety margin for transient overvoltage in telecom/server PSUs
R_DS(on) max @ 10 V	0.18 Ω - enables <1.98 W conduction loss at 11 A, critical for thermally constrained PFC boost stages
Q_g max	110 nC - reduces gate drive power and allows use of lower-cost 1-A peak gate drivers in 100–300 kHz SMPS
E_AS	691 mJ - ensures single-pulse avalanche survivability during output short-circuit or startup fault conditions
R_thJC	0.55 °C/W - permits 227 W dissipation with ≤125 °C case-to-ambient ΔT using standard TO-220 heatsink mounting
C_iss	2415 pF - low input capacitance minimizes Miller effect and improves dv/dt immunity in high-side configurations
t_r/t_f	33/38 ns - fast switching transitions reduce overlap loss in synchronous rectification and resonant converters

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical lead frame. Mounting hole centered on tab for mechanical stability and thermal interface to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; requires <110 nC charge for full enhancement; sensitive to ESD (±30 V rating)
D (Drain)	Main power output terminal	Connected to internal die backside; electrically tied to metal tab - must be insulated from heatsink unless system ground referenced
S (Source)	Power return / reference node	Common return path for load current and gate driver; defines local ground for gate drive loop; carries full 22 A continuous current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	19.8 Ω·nC - directly lowers total power loss in hard-switched converters operating above 100 kHz
Avalanche-rated (UIS)	691 mJ single-pulse energy - eliminates need for external snubbers in inductive load switching applications
Ultra-low Q_gd/Q_g ratio	29 % (32/110 nC) - suppresses Miller-induced false turn-on and improves noise immunity in high-dv/dt environments
RoHS-compliant & halogen-free	Meets IEC 61249-2-21 and JEDEC J-STD-020 - supports environmental compliance for industrial and telecom end equipment

Applications

Server Power Supplies	Photovoltaic Inverters
Use Scenario: Primary-side switching in 1–3 kW telecom rectifiers and server CRPS units with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage N-channel switching transistor in continuous conduction mode (CCM) PFC boost stage and LLC resonant half-bridge primary switches. Use Value: 0.18 Ω R_DS(on) and 110 nC Q_g enable >96 % efficiency at full load while maintaining thermal margin under forced-air cooling.	Use Scenario: DC-AC conversion stage in string inverters handling 600–1000 V PV array inputs. IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET-based H-bridge inverters and unidirectional DC link choppers. Use Value: 650 V rating and 691 mJ UIS energy withstand capability ensure reliability during grid fault transients and islanding events.
Fluorescent Ballasts	Industrial Motor Drives
Use Scenario: High-frequency resonant control in electronic ballasts for T5/T8 lamps operating at 25–60 kHz. IC Role / Device Role / Timing Role: Half-bridge switching element driving resonant LC tank; requires fast t_r/t_f and low C_oss for zero-voltage switching. Use Value: 33 ns rise time and 118 pF C_oss support stable resonance at 50 kHz with minimal dead-time sensitivity.	Use Scenario: Inverter leg switching in 0.75–2.2 kW variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: Low-loss main switch in 6-step or SVM-controlled 3-phase inverter output stage. Use Value: 22 A continuous current rating and 0.55 °C/W R_thJC allow operation at 75 °C case temperature without derating in enclosed cabinets.

Server Power Supplies

Photovoltaic Inverters

Use Scenario: Primary-side switching in 1–3 kW telecom rectifiers and server CRPS units with 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage N-channel switching transistor in continuous conduction mode (CCM) PFC boost stage and LLC resonant half-bridge primary switches.

Use Value: 0.18 Ω R_DS(on) and 110 nC Q_g enable >96 % efficiency at full load while maintaining thermal margin under forced-air cooling.

Use Scenario: DC-AC conversion stage in string inverters handling 600–1000 V PV array inputs.

IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET-based H-bridge inverters and unidirectional DC link choppers.

Use Value: 650 V rating and 691 mJ UIS energy withstand capability ensure reliability during grid fault transients and islanding events.

Fluorescent Ballasts

Industrial Motor Drives

Use Scenario: High-frequency resonant control in electronic ballasts for T5/T8 lamps operating at 25–60 kHz.

IC Role / Device Role / Timing Role: Half-bridge switching element driving resonant LC tank; requires fast t_r/t_f and low C_oss for zero-voltage switching.

Use Value: 33 ns rise time and 118 pF C_oss support stable resonance at 50 kHz with minimal dead-time sensitivity.

Use Scenario: Inverter leg switching in 0.75–2.2 kW variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: Low-loss main switch in 6-step or SVM-controlled 3-phase inverter output stage.

Use Value: 22 A continuous current rating and 0.55 °C/W R_thJC allow operation at 75 °C case temperature without derating in enclosed cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22N65M5	R_DS(on) = 0.19 Ω (max), Q_g = 95 nC, TO-247 package, no avalanche rating specified	Lacks UIS qualification; higher R_DS(on) increases conduction loss by ~5.5 % at 11 A	Prefer SIHP22N65E-GE3 where fault robustness and thermal performance are prioritized over gate drive simplicity
IXTH22N65X2	R_DS(on) = 0.17 Ω (max), Q_g = 125 nC, TO-247 package, 100 % UIS tested	Higher Q_g demands stronger gate driver; larger footprint limits board density	Choose SIHP22N65E-GE3 when TO-220AB form factor, lower Q_g, and proven field reliability in telecom PFC are required

Compared with STP22N65M5 and IXTH22N65X2, SIHP22N65E-GE3 delivers optimal balance of avalanche ruggedness, thermal efficiency (0.55 °C/W), and compact TO-220AB packaging - making it preferred for space-constrained, high-reliability 650 V switching in server PSUs and solar inverters.

Availability

SIHP22N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable halogen-free sourcing.

Supply support for SIHP22N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and automotive-qualified components.

The SIHP22N65E-GE3 belongs to Vishay's E Series superjunction MOSFET family, engineered specifically for high-voltage, high-frequency switch-mode power conversion in telecom, industrial, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHP22N65E-GE3 at 100 °C case temperature?

The SIHP22N65E-GE3 supports 14 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating from 22 A at 25 °C reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. The linear derating factor is 1.8 W/°C beyond 100 °C case temperature.

Does SIHP22N65E-GE3 have an avalanche-rated specification, and what does it mean for circuit design?

Yes, SIHP22N65E-GE3 is fully avalanche-rated with E_AS = 691 mJ (single-pulse, test condition: V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 7 A). This means the device can safely absorb inductive energy during unclamped switching events - eliminating the need for external snubbers in PFC and motor drive applications and improving system robustness against load dumps or short circuits.

What is the gate threshold voltage range for SIHP22N65E-GE3, and how does it affect gate drive design?

The gate threshold voltage (V_GS(th)) for SIHP22N65E-GE3 is specified as 2–4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing sufficient margin against false triggering from noise. Designers should avoid marginal gate voltages (<6 V) to prevent partial enhancement and excessive R_DS(on) - the device is characterized for full enhancement at V_GS = 10 V.

How does the body diode performance of SIHP22N65E-GE3 compare to standard silicon diodes in freewheeling applications?

The SIHP22N65E-GE3 features an integrated body diode with V_SD = 1.2 V (at I_S = 11 A, T_J = 25 °C) and t_rr = 400 ns. While slower and higher forward drop than dedicated SiC Schottky diodes, its soft recovery and 5.9 μC Q_rr minimize voltage overshoot and EMI in hard-switched freewheel paths - making it suitable for cost-sensitive PFC and motor drive applications where discrete diode replacement isn't required.

Is SIHP22N65E-GE3 compatible with lead-free soldering processes, and what is the maximum allowable peak temperature?

Yes, SIHP22N65E-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free reflow per J-STD-020. The datasheet specifies a maximum peak soldering temperature of 300 °C for 10 seconds - consistent with standard Pb-free reflow profiles. Proper thermal profiling is essential to avoid exceeding the 150 °C maximum junction temperature during assembly.

SIHP22N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2415 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP22N65E-GE3 FAQ

1.How can I place an order for SIHP22N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP22N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP22N65E-GE3 reliable?

The price and inventory of SIHP22N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP22N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP22N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP22N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP22N65E-GE3?

SIHP22N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP22N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP22N65E-GE3?

For technical support, including SIHP22N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP22N65E-GE3 requirements.

6.How does Aetrix verify that SIHP22N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP22N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP22N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP22N65E-GE3?

All SIHP22N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP22N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP22N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHP22N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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