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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP23N60E-BE3

Name: SIHP23N60E-BE3
Brand: Vishay Siliconix
SKU: SIHP23N60E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP23N60E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP23N60E-BE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP23N60E-BE3 from Vishay Siliconix is a 600 V, 23 A N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for high-efficiency switch-mode power supplies with R_DS(on) = 0.158 Ω at V_GS = 10 V, Q_g = 95 nC, and avalanche-rated (E_AS = 353 mJ). It serves as the primary switching element in PFC and main DC-DC stages of telecom rectifiers and server PSUs.

For engineers reviewing the SIHP23N60E-BE3 datasheet, SIHP23N60E-BE3 pinout, SIHP23N60E-BE3 application, or SIHP23N60E-BE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, 600 V blocking capability, and robust UIS rating-critical for hard-switched industrial and renewable energy inverters.

Technical Context

This device employs planar stripe silicon technology with optimized gate oxide and body diode design to achieve balanced conduction and switching losses. Its dynamic parameters-including C_iss = 2418 pF, C_oss = 119 pF, and Q_gd/Q_g ratio of ~26%-support stable operation under high dV/dt (37 V/ns) and fast turn-off in continuous conduction mode (CCM) PFC.

The integral body diode features t_rr = 384–768 ns and Q_rr = 6.4–12.8 μC at 25 °C, enabling reliable commutation in bridge topologies without external snubbers. Thermal resistance R_thJC = 0.55 °C/W ensures efficient heat transfer to heatsinks in high-power density designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified systems with 50% safety margin for surge and ringing
R_DS(on) max	0.158 Ω @ V_GS = 10 V - limits conduction loss to ≤1.8 W at 12 A DC, enabling compact thermal design
Q_g max	95 nC - reduces gate drive power and enables use of lower-cost 1-A drivers in 100–300 kHz SMPS
E_AS	353 mJ - withstands unclamped inductive switching events in motor drives and welding equipment
I_D cont	23 A @ T_C = 25 °C - delivers full rated current with standard TO-220 heatsinking (no forced air)
t_r/t_f	38/34 ns - enables clean zero-voltage switching (ZVS) transitions in resonant LLC converters
V_SD	0.9–1.2 V @ I_S = 12 A - minimizes reverse recovery loss during synchronous rectification or freewheeling

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and 0.55 °C/W junction-to-case thermal resistance. Mounting screw hole centered on tab for mechanical stability and thermal interface optimization.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; requires <100 Ω series resistor to damp oscillation and limit peak current
D (Drain)	High-side power output	Connected to heatsink via isolated tab; carries full load current and withstands 600 V transients
S (Source)	Power return / reference node	Serves as local ground for gate driver; must be routed with low inductance to minimize V_GS noise

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	15.1 Ω·nC - improves efficiency in 100–200 kHz PFC stages by reducing combined switching + conduction loss
Avalanche energy rating	353 mJ single-pulse - eliminates need for external clamping in UPS and battery charger inductive loads
Ultra-low Q_gd/Q_g ratio	~26% - enhances Miller immunity and enables stable operation with high dV/dt up to 37 V/ns
Body diode Q_rr	6.4–12.8 μC - reduces reverse recovery loss and EMI in half-bridge motor drives and solar inverters
Pb-free/halogen-free	RoHS-compliant TO-220AB package - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for reflow compatibility

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 3 kW front-end AC-DC converters with active PFC and LLC resonant DC-DC stage. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 100–200 kHz PWM control. Use Value: Low Q_g and R_DS(on) reduce total losses by ≥8% vs. legacy 650 V MOSFETs, improving 80 PLUS Titanium efficiency compliance.	Use Scenario: Output rectification and hold-up regulation in -48 V distributed power architecture (DPA) systems. IC Role / Device Role / Timing Role: Synchronous rectifier and transient suppression switch in dual-active-bridge (DAB) isolation stage. Use Value: Avalanche rating and fast body diode enable robust operation during line surges and hot-swap events without derating.
Solar PV Inverters	Induction Heating
Use Scenario: DC-link switching in string inverters with 1000 V nominal input and transformerless topology. IC Role / Device Role / Timing Role: High-side switch in three-level NPC (neutral-point-clamped) inverter leg operating at 16–20 kHz. Use Value: 600 V rating with 50 V margin allows direct use without series stacking, simplifying gate drive and layout.	Use Scenario: Half-bridge inverter stage driving 20–100 kHz resonant tank in domestic and industrial cooktops. IC Role / Device Role / Timing Role: Fast-switching power switch managing 5–15 kW load with soft-commutation requirements. Use Value: Low C_oss and controlled dV/dt minimize capacitive turn-on loss and EMI generation during zero-current switching.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 3 kW front-end AC-DC converters with active PFC and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 100–200 kHz PWM control.

Use Value: Low Q_g and R_DS(on) reduce total losses by ≥8% vs. legacy 650 V MOSFETs, improving 80 PLUS Titanium efficiency compliance.

Use Scenario: Output rectification and hold-up regulation in -48 V distributed power architecture (DPA) systems.

IC Role / Device Role / Timing Role: Synchronous rectifier and transient suppression switch in dual-active-bridge (DAB) isolation stage.

Use Value: Avalanche rating and fast body diode enable robust operation during line surges and hot-swap events without derating.

Solar PV Inverters

Induction Heating

Use Scenario: DC-link switching in string inverters with 1000 V nominal input and transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC (neutral-point-clamped) inverter leg operating at 16–20 kHz.

Use Value: 600 V rating with 50 V margin allows direct use without series stacking, simplifying gate drive and layout.

Use Scenario: Half-bridge inverter stage driving 20–100 kHz resonant tank in domestic and industrial cooktops.

IC Role / Device Role / Timing Role: Fast-switching power switch managing 5–15 kW load with soft-commutation requirements.

Use Value: Low C_oss and controlled dV/dt minimize capacitive turn-on loss and EMI generation during zero-current switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22N60M2	R_DS(on) = 0.17 Ω, Q_g = 85 nC, E_AS = 290 mJ, TO-220FP package (lower PD)	Lower avalanche ruggedness and 175 W max power dissipation limit use in high-reliability telecom systems	Prefer SIHP23N60E-BE3 where unclamped inductive stress exceeds 290 mJ or case temperature exceeds 100 °C
IXTH24N60L2	R_DS(on) = 0.165 Ω, Q_g = 105 nC, E_AS = 420 mJ, TO-247AC package (higher cost, larger footprint)	Higher Q_g increases gate drive loss; superior avalanche rating suits welding inverters but over-spec for PFC	Choose SIHP23N60E-BE3 when TO-220AB form factor, cost, and balanced FOM are prioritized over maximum E_AS

Compared with STP22N60M2 and IXTH24N60L2, SIHP23N60E-BE3 delivers optimal trade-off between conduction loss (0.158 Ω), switching efficiency (95 nC Q_g), and ruggedness (353 mJ E_AS) in TO-220AB-making it ideal for space-constrained, high-volume server and telecom power supplies where thermal and layout constraints govern selection.

Availability

SIHP23N60E-BE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHP23N60E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switch-mode power conversion-designed specifically for PFC, DC-DC, and motor drive stages where low FOM and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SIHP23N60E-BE3 at 100 °C case temperature?

The SIHP23N60E-BE3 supports 15 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full load conditions for sustained reliability of the SIHP23N60E-BE3.

Does SIHP23N60E-BE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHP23N60E-BE3 is fully rated for single-pulse avalanche energy (E_AS) at 353 mJ, tested per JEDEC JESD24-11 using L = 28.2 mH, R_g = 25 Ω, I_AS = 5 A, and starting T_J = 25 °C. This validated ruggedness allows the SIHP23N60E-BE3 to safely absorb inductive energy during fault conditions without degradation, eliminating need for external clamping in many industrial applications.

What is the typical gate threshold voltage range for SIHP23N60E-BE3, and why does it matter for drive circuit design?

The SIHP23N60E-BE3 has a V_GS(th) range of 2–4 V at I_D = 250 μA, confirming strong enhancement-mode behavior and clear turn-on margin above logic-level signals. This ensures reliable turn-on with standard 10 V gate drivers while preventing accidental conduction from noise-critical for stable operation of the SIHP23N60E-BE3 in high-noise power converter environments.

Can SIHP23N60E-BE3 be used in synchronous rectification configurations, and what body diode parameters support this?

Yes, SIHP23N60E-BE3 supports synchronous rectification due to its integral body diode with V_SD = 0.9–1.2 V at I_S = 12 A and t_rr = 384–768 ns. These values enable low forward loss and predictable recovery timing, allowing precise gate timing control to minimize shoot-through risk. The SIHP23N60E-BE3's Q_rr of 6.4–12.8 μC further reduces switching loss in high-frequency DC-DC stages.

How does the "-BE3" suffix in SIHP23N60E-BE3 affect its specifications and compliance?

The "-BE3" suffix indicates an alternate manufacturing location for the SIHP23N60E-BE3, with identical electrical, thermal, and mechanical specifications to the base SiHP23N60E. It denotes lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc?99912), ensuring full interchangeability in production without design or qualification impact.

SIHP23N60E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 158mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2418 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP23N60E-BE3 FAQ

1.How can I place an order for SIHP23N60E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP23N60E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP23N60E-BE3 reliable?

The price and inventory of SIHP23N60E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP23N60E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP23N60E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP23N60E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP23N60E-BE3?

SIHP23N60E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP23N60E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP23N60E-BE3?

For technical support, including SIHP23N60E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP23N60E-BE3 requirements.

6.How does Aetrix verify that SIHP23N60E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP23N60E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP23N60E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP23N60E-BE3?

All SIHP23N60E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP23N60E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP23N60E-BE3 part is unused and in its original packaging.

Return procedure for SIHP23N60E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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