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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP23N60E-GE3

Name: SIHP23N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP23N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP23N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP23N60E-GE3.pdf

Description:: MOSFET N-CH 600V 23A TO220AB

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Product details

Overview

SIHP23N60E-GE3 from Vishay Siliconix is a 600 V, 23 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.158 Ω at V_GS = 10 V, Q_g = 95 nC, and avalanche-rated (E_AS = 353 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHP23N60E-GE3 datasheet, SIHP23N60E-GE3 pinout, SIHP23N60E-GE3 application, or SIHP23N60E-GE3 equivalent, key selection criteria include its 600 V V_DS, 23 A continuous drain rating at T_C = 25 °C, ultra-low gate charge, and robust unclamped inductive switching capability.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching applications. Its low C_iss (2418 pF) and minimized Q_gd/Q_g ratio (25/95 nC) reduce Miller-induced turn-off delay and improve voltage transient immunity during fast dV/dt events up to 37 V/ns.

The integrated body diode supports synchronous rectification and freewheeling in bridge topologies, with t_rr = 384–768 ns and Q_rr = 6.4–12.8 μC at I_F = 12 A, enabling predictable recovery behavior in phase-shifted full-bridge and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in 380–400 V PFC outputs with margin
R_DS(on) max	0.158 Ω at V_GS = 10 V - Limits conduction loss to ≤ 36 W at 12 A continuous operation
Q_g max	95 nC - Enables efficient gate drive with <1 W driver loss at 100 kHz switching
E_AS	353 mJ - Supports reliable unclamped inductive switching without external snubbers
C_iss	2418 pF - Reduces capacitive loading on gate drivers and improves switching speed control
t_r/t_f	38/34 ns - Enables clean 100–200 kHz hard-switching with minimal overlap loss
R_thJC	0.55 °C/W - Allows 227 W dissipation with ≤ 125 °C junction rise over 25 °C case

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 4.8 mm creepage/clearance, and Pb-free/halogen-free construction per JEDEC MS-001BA.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; requires <100 nC charge for full enhancement
D (Drain)	High-side power terminal	Connected to heatsink via isolated tab; carries full load current and withstands 600 V transients
S (Source)	Reference node	Serves as return path for ID and body diode current; defines local ground for gate drive loop

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	15.0 Ω·nC - Balances conduction and switching loss for optimal efficiency at 100–200 kHz
Avalanche energy rating	353 mJ single-pulse - Eliminates need for external clamping in inductive load switching
Low C_iss and C_oss	2418 pF / 119 pF - Minimizes driver power and improves EMI profile in high-dV/dt environments
Body diode Q_rr	6.4–12.8 μC - Enables stable commutation in half-bridge and full-bridge topologies
150 °C max junction temperature	Supports operation in sealed enclosures or high-ambient industrial environments without derating

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter operating at 100 kHz in 3 kW front-end PFC with 380 V DC output. IC Role / Device Role / Timing Role: Main switching device handling 23 A RMS input current; synchronized to interleaved gate drive signals. Use Value: Low Q_g and R_DS(on) reduce total losses by ≥1.2 W vs. legacy 600 V MOSFETs, improving system efficiency to >96.5 %.	Use Scenario: Isolated forward converter in 48 V telecom rectifier delivering 100 A output with active OR-ing. IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer; operates in discontinuous conduction mode with zero-voltage switching assist. Use Value: 353 mJ E_AS rating ensures reliability during line surges and hot-swap events without snubber redesign.
Solar PV Inverter DC-DC Stage	Industrial Motor Drive Inverter
Use Scenario: High-voltage DC-DC stage stepping 1000 V PV array voltage down to 400 V battery bus in string inverters. IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge topology; subjected to repetitive 600 V blocking and 20 A peak current. Use Value: 0.55 °C/W R_thJC enables direct heatsink mounting with ≤ 75 °C junction rise, supporting 25-year field life in outdoor installations.	Use Scenario: Three-phase inverter driving 7.5 kW induction motor in HVAC compressor with regenerative braking. IC Role / Device Role / Timing Role: Upper-leg switch in IGBT-like configuration; conducts freewheeling current via integral body diode during PWM off-time. Use Value: Body diode t_rr = 384 ns and low Q_rr minimize shoot-through risk and reduce EMI during commutation transitions.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter operating at 100 kHz in 3 kW front-end PFC with 380 V DC output.

IC Role / Device Role / Timing Role: Main switching device handling 23 A RMS input current; synchronized to interleaved gate drive signals.

Use Value: Low Q_g and R_DS(on) reduce total losses by ≥1.2 W vs. legacy 600 V MOSFETs, improving system efficiency to >96.5 %.

Use Scenario: Isolated forward converter in 48 V telecom rectifier delivering 100 A output with active OR-ing.

IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer; operates in discontinuous conduction mode with zero-voltage switching assist.

Use Value: 353 mJ E_AS rating ensures reliability during line surges and hot-swap events without snubber redesign.

Solar PV Inverter DC-DC Stage

Industrial Motor Drive Inverter

Use Scenario: High-voltage DC-DC stage stepping 1000 V PV array voltage down to 400 V battery bus in string inverters.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge topology; subjected to repetitive 600 V blocking and 20 A peak current.

Use Value: 0.55 °C/W R_thJC enables direct heatsink mounting with ≤ 75 °C junction rise, supporting 25-year field life in outdoor installations.

Use Scenario: Three-phase inverter driving 7.5 kW induction motor in HVAC compressor with regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg switch in IGBT-like configuration; conducts freewheeling current via integral body diode during PWM off-time.

Use Value: Body diode t_rr = 384 ns and low Q_rr minimize shoot-through risk and reduce EMI during commutation transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22N60M2	R_DS(on) = 0.18 Ω, Q_g = 72 nC, E_AS = 290 mJ, TO-220FP package	Lower thermal resistance but reduced avalanche margin; requires tighter gate drive timing control	Preferred where lower gate drive loss is critical and surge immunity is managed externally
IXTH24N60L2	R_DS(on) = 0.17 Ω, Q_g = 105 nC, E_AS = 420 mJ, TO-247AC package	Higher avalanche rating but larger footprint and higher gate drive demand	Selected when maximum ruggedness is required and PCB space allows TO-247 layout

Compared with STP22N60M2 and IXTH24N60L2, the SIHP23N60E-GE3 offers the best balance of low R_DS(on), moderate Q_g, and proven avalanche performance in the widely adopted TO-220AB form factor-making it ideal for cost-sensitive, high-volume telecom and server power designs requiring field-proven reliability.

Availability

SIHP23N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHP23N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHP23N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-reliability hard-switching in 600 V industrial and communications power systems.

FAQ

What is the maximum continuous drain current rating for SIHP23N60E-GE3 at 100 °C case temperature?

The SIHP23N60E-GE3 has a continuous drain current rating of 15 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature. The SIHP23N60E-GE3 maintains R_DS(on) stability across this range due to its positive V_GS(th) temperature coefficient.

Does SIHP23N60E-GE3 support logic-level gate drive?

No, the SIHP23N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, but full enhancement requires V_GS = 10 V to achieve the specified R_DS(on) of 0.158 Ω. Driving the SIHP23N60E-GE3 with only 5 V may result in excessive conduction loss and thermal runaway under load.

What is the typical reverse recovery time (t_rr) of the body diode in SIHP23N60E-GE3?

The typical reverse recovery time t_rr of the integral body diode in SIHP23N60E-GE3 is 384 ns, measured at T_J = 25 °C, I_F = 12 A, dI/dt = 100 A/μs, and V_R = 25 V. The SIHP23N60E-GE3 datasheet specifies a maximum t_rr of 768 ns, supporting predictable commutation in bridge configurations without external diode supplementation.

Is SIHP23N60E-GE3 halogen-free and RoHS-compliant?

Yes, the SIHP23N60E-GE3 is both halogen-free and RoHS-compliant. The "-GE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction per Vishay's material categorization standard. Compliance documentation, including test reports and declarations, is available under document number 91551 on vishay.com.

Can SIHP23N60E-GE3 be used in avalanche mode repeatedly?

The SIHP23N60E-GE3 is rated for single-pulse avalanche energy (E_AS) of 353 mJ, but the datasheet does not specify repetitive avalanche capability. Operation in repetitive unclamped inductive switching is not recommended without validation. For designs requiring repeated avalanche stress, the SIHP23N60E-GE3 should be operated within its SOA limits using appropriate snubbing or clamping circuits.

SIHP23N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 158mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2418 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP23N60E-GE3 FAQ

1.How can I place an order for SIHP23N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP23N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP23N60E-GE3 reliable?

The price and inventory of SIHP23N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP23N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP23N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP23N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP23N60E-GE3?

SIHP23N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP23N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP23N60E-GE3?

For technical support, including SIHP23N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP23N60E-GE3 requirements.

6.How does Aetrix verify that SIHP23N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP23N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP23N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP23N60E-GE3?

All SIHP23N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP23N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP23N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP23N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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