Vishay Siliconix SIHP240N65E-GE3

Overview

SIHP240N65E-GE3 from Vishay Siliconix is a 650 V, 16 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.208 Ω R_DS(on) at V_GS = 10 V, 29 nC total gate charge, and Kelvin-source connection for reduced gate noise-designed for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHP240N65E-GE3 datasheet, SIHP240N65E-GE3 pinout, SIHP240N65E-GE3 application, or SIHP240N65E-GE3 equivalent, key selection criteria include avalanche-rated UIS performance (36 mJ), low Co(er) of 42 pF, and thermal resistance R_thJC of 0.6 °C/W for high-power switching reliability.

Technical Context

This E-series MOSFET employs 4th-generation silicon technology optimized for hard-switched SMPS topologies. Its low figure-of-merit (R_DS(on) × Q_g = 6.05 Ω·nC) and reduced effective output capacitance enable lower conduction and switching losses in continuous conduction mode PFC and LLC resonant converters.

The Kelvin-source configuration separates high-current source return from signal-source sensing, minimizing gate drive loop inductance and suppressing dv/dt-induced false turn-on. It supports unclamped inductive switching up to 33 A with guaranteed single-pulse avalanche energy of 36 mJ under defined test conditions.

Key Specifications

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and 2.54 mm lead pitch. Thermal pad on drain side requires mechanical anchoring and thermal interface material for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW20N65M5 and IXTH24N65X2, SIHP240N65E-GE3 delivers superior thermal performance (R_thJC = 0.6 °C/W), guaranteed avalanche ruggedness, and Kelvin-source noise immunity-making it the preferred choice for mission-critical 650 V power conversion where layout control and long-term reliability are prioritized over minimal gate drive loss.

Availability

SIHP240N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, extended lifecycle support, and traceable sourcing for industrial production programs.

Supply support for SIHP240N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualified processes.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switched-mode power conversion in datacenter, telecom, and renewable energy systems-emphasizing low FOM, rugged avalanche behavior, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for SIHP240N65E-GE3 at 100 °C case temperature?

The SIHP240N65E-GE3 has a continuous drain current rating of 10 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 16 A rating at 25 °C case temperature, based on a linear derating factor of 1.2 W/°C and R_thJC = 0.6 °C/W. Designers must ensure heatsink design maintains case temperature ≤100 °C under worst-case load conditions to sustain this current.

Does SIHP240N65E-GE3 support Kelvin-source gate drive, and how is it implemented physically?

Yes, SIHP240N65E-GE3 features a dedicated Kelvin-source terminal (S(K)) separate from the main power source (S) pin. The device uses a 4-pin TO-220AB variant where Pin 1 is G, Pin 2 is D (tab), Pin 3 is S (power), and Pin 4 is S(K) (signal). This layout requires routing the Kelvin-source trace directly to the gate driver ground reference-bypassing high-current source paths-to eliminate voltage drop-induced gate threshold modulation during fast switching.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHP240N65E-GE3, and why does it matter in hard-switched topologies?

The SIHP240N65E-GE3 body diode has a typical Q_rr of 2.7 μC at T_J = 25 °C, IS = 7 A, and di/dt = 100 A/μs. This parameter directly impacts turn-on loss and EMI in hard-switched converters: higher Q_rr increases peak reverse recovery current (I_RRM = 17 A typical), causing greater voltage overshoot and ringing. Designers must size snubbers and select gate resistors accordingly to manage these transients without compromising efficiency.

Is SIHP240N65E-GE3 rated for unclamped inductive switching (UIS), and what test conditions validate this rating?

Yes, SIHP240N65E-GE3 is fully rated for unclamped inductive switching with a guaranteed single-pulse avalanche energy (E_AS) of 36 mJ. This is validated per Note b in the datasheet: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 1.6 A. The rating confirms robustness against inductive kickback in PFC and motor drive applications without requiring external clamping networks.

What is the gate-source leakage current specification for SIHP240N65E-GE3 at ±30 V, and how does it affect high-impedance gate drive designs?

The SIHP240N65E-GE3 specifies gate-source leakage current (I_GSS) of ±1 μA maximum at V_GS = ±30 V and T_J = 25 °C. This low leakage supports stable gate bias in high-impedance drive circuits (e.g., optocoupler-isolated gate drivers with >10 kΩ pull-up), minimizing unintended turn-on risk during standby or fault conditions. At elevated temperatures, leakage remains below 10 μA, preserving reliability in industrial environments.