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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP24N65E-E3

Name: SIHP24N65E-E3
Brand: Vishay Siliconix
SKU: SIHP24N65E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP24N65E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP24N65E-E3.pdf

Description:: MOSFET N-CH 650V 24A TO220AB

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Product details

Overview

SIHP24N65E-E3 from Vishay Siliconix is a 650 V, 24 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.145 Ω @ V_GS = 10 V, Q_g = 122 nC, and avalanche-rated (E_AS = 508 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHP24N65E-E3 datasheet, SIHP24N65E-E3 pinout, SIHP24N65E-E3 application, or SIHP24N65E-E3 equivalent, key selection criteria include its 650 V V_DS, 0.145 Ω R_DS(on), 122 nC gate charge, TO-220AB thermal performance (R_thJC = 0.5 °C/W), and UIS ruggedness-critical for hard-switched industrial and renewable energy inverters.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage, medium-current switching with low C_iss (2740 pF) and ultra-low Q_gd/Q_g ratio (37/122 nC), enabling fast, low-loss turn-on/turn-off transitions. Its body diode exhibits t_rr = 433 ns and Q_rr = 7.3 μC at 25 °C, supporting moderate-frequency synchronous rectification and flyback operation.

The device operates across -55 to +150 °C junction temperature range and supports dV/dt immunity up to 37 V/ns at 125 °C. Its 0.5 °C/W junction-to-case thermal resistance enables 250 W continuous dissipation at T_C = 25 °C, making it suitable for thermally constrained board-level designs without forced airflow.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Supports 400 V DC bus designs with ≥30 % safety margin for transient overvoltage in PFC and solar inverters.
R_DS(on) max @ 10 V	0.145 Ω - Enables <1.7 W conduction loss at 12 A DC, reducing heatsink size in 1–3 kW power stages.
Q_g max	122 nC - Determines gate driver current requirement (~1.2 A peak for 100 ns rise time), critical for selecting compatible drivers like UCC27531.
E_AS	508 mJ - Confirmed single-pulse unclamped inductive switching capability, essential for reliability in motor drive snubberless designs.
R_thJC	0.5 °C/W - Allows direct mounting to heatsink with minimal thermal interface resistance; enables 250 W continuous operation at T_C = 25 °C.
t_rr	433 ns - Limits reverse recovery losses in bridge-leg configurations; requires careful gate drive timing to avoid shoot-through in half-bridge topologies.
I_D cont @ 100 °C	16 A - Defines usable current derating for sealed enclosures or ambient temperatures >70 °C without active cooling.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole configuration. Mounting hole accommodates M3 screw; tab must be electrically isolated unless used as heatsink return path.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	High-impedance input requiring ≤122 nC charge; sensitive to ESD; must be driven with low-inductance path to minimize ringing.
D (Drain)	Main current output / high-side switch node	Connected to internal die backside; tab is electrically tied to drain-requires isolation washer if mounted to grounded heatsink.
S (Source)	Reference node / current return	Common return for gate drive and load current; layout must minimize source inductance to preserve switching speed and stability.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	17.7 Ω·nC - Balances conduction and switching loss trade-off better than legacy 650 V MOSFETs, improving full-load efficiency by ~0.5–1.2 % in 1 kW PFC.
Avalanche energy rating	508 mJ - Eliminates need for external clamping circuits in inductive load switching, reducing BOM count in welding and motor control.
Low C_iss (2740 pF)	Reduces capacitive loading on gate driver, enabling use of lower-cost drivers and minimizing Miller-induced false turn-on risk.
Body diode Q_rr = 7.3 μC	Enables predictable commutation in LLC resonant converters and reduces voltage overshoot during freewheeling in buck-derived topologies.
Lead (Pb)-free & Halogen-free option	SiHP24N65E-GE3 variant available - meets RoHS 2011/65/EU and JEDEC J-STD-609A Class 1 requirements for green manufacturing compliance.

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Active clamp forward or two-switch forward PFC stage operating at 100 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: High-side switching element handling 24 A RMS current, switching at 100–200 kHz with 520 V V_DS stress. Use Value: 0.145 Ω R_DS(on) and 122 nC Q_g enable >96 % efficiency at full load while maintaining thermal margin under 70 °C ambient.	Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Main switch in three-phase IGBT/MOSFET-based inverter leg, operating in hard-switched mode below 20 kHz. Use Value: 650 V rating and 508 mJ E_AS ensure robustness against DC-link transients and inductive kickback during fault conditions.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: 3 kW induction motor drive using 650 V three-phase inverter with discrete gate drivers. IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter leg, conducting 16 A continuous at 100 °C case temperature. Use Value: R_thJC = 0.5 °C/W allows direct heatsink mounting without thermal paste degradation concerns over 10-year field life.	Use Scenario: High-frequency electronic ballast driving 40–60 W fluorescent lamps at 25–60 kHz. IC Role / Device Role / Timing Role: Resonant half-bridge switch controlling lamp ignition and regulation via variable frequency control. Use Value: Low Q_gd/Q_g ratio (37/122 nC) ensures clean zero-voltage switching transition, minimizing EMI and extending lamp life.

Server Power Supply

Solar PV Inverter

Use Scenario: Active clamp forward or two-switch forward PFC stage operating at 100 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element handling 24 A RMS current, switching at 100–200 kHz with 520 V V_DS stress.

Use Value: 0.145 Ω R_DS(on) and 122 nC Q_g enable >96 % efficiency at full load while maintaining thermal margin under 70 °C ambient.

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switch in three-phase IGBT/MOSFET-based inverter leg, operating in hard-switched mode below 20 kHz.

Use Value: 650 V rating and 508 mJ E_AS ensure robustness against DC-link transients and inductive kickback during fault conditions.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: 3 kW induction motor drive using 650 V three-phase inverter with discrete gate drivers.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter leg, conducting 16 A continuous at 100 °C case temperature.

Use Value: R_thJC = 0.5 °C/W allows direct heatsink mounting without thermal paste degradation concerns over 10-year field life.

Use Scenario: High-frequency electronic ballast driving 40–60 W fluorescent lamps at 25–60 kHz.

IC Role / Device Role / Timing Role: Resonant half-bridge switch controlling lamp ignition and regulation via variable frequency control.

Use Value: Low Q_gd/Q_g ratio (37/122 nC) ensures clean zero-voltage switching transition, minimizing EMI and extending lamp life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW24N65M5	650 V, 24 A, R_DS(on) = 0.135 Ω, Q_g = 110 nC, TO-247 package	Higher thermal mass and R_thJC = 0.45 °C/W; requires larger PCB footprint but offers superior surge current handling	Preferred for >3 kW designs where layout space permits TO-247 and higher peak current (>70 A IDM) is needed
IXFH24N65X2	650 V, 24 A, R_DS(on) = 0.125 Ω, Q_g = 95 nC, TO-247 package, enhanced body diode	Lower Q_rr (4.2 μC) and faster t_rr (290 ns); optimized for ZVS/ZCS topologies	Better suited for resonant LLC and phase-shifted full-bridge where diode recovery performance dominates efficiency

Compared with STW24N65M5 and IXFH24N65X2, SIHP24N65E-E3 provides optimal cost-performance balance in TO-220AB form factor for 1–2 kW PFC and inverter stages, with verified UIS ruggedness and industry-standard pinout compatibility for drop-in replacement in existing layouts.

Availability

SIHP24N65E-E3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for SIHP24N65E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in power conversion systems-including telecom rectifiers, server PSUs, and renewable energy inverters-where low R_DS(on) × Q_g and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for SIHP24N65E-E3 at 100 °C case temperature?

The SIHP24N65E-E3 supports 16 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions.

Does SIHP24N65E-E3 have avalanche capability, and how is it rated?

Yes, SIHP24N65E-E3 is fully rated for unclamped inductive switching (UIS) with E_AS = 508 mJ at T_J = 25 °C. This rating is validated per JEDEC standard JESD24-11 and applies to single-pulse events. The device does not require external snubbers in properly designed inductive load circuits, enhancing system reliability in motor drives and welding equipment.

What is the gate threshold voltage range for SIHP24N65E-E3, and how does it affect drive design?

The SIHP24N65E-E3 has a gate threshold voltage V_GS(th) of 2–4 V at T_J = 25 °C. This range ensures reliable turn-on with standard 10 V gate drive while preventing accidental conduction from noise. Designers should use gate drivers capable of delivering ≥12 V to guarantee full enhancement and minimize R_DS(on) variation across temperature and unit-to-unit spread.

How does the body diode performance of SIHP24N65E-E3 compare to standard MOSFETs in flyback applications?

The SIHP24N65E-E3 body diode features t_rr = 433 ns and Q_rr = 7.3 μC at 25 °C, which is competitive among 650 V MOSFETs. While not optimized for synchronous rectification like dedicated FRDs, its recovery characteristics allow stable operation in discontinuous conduction mode (DCM) flyback converters up to 100 kHz when paired with appropriate gate timing and snubbing.

Is SIHP24N65E-E3 pin-compatible with other TO-220AB MOSFETs, and what mechanical considerations apply?

Yes, SIHP24N65E-E3 uses the industry-standard TO-220AB outline with G-D-S pinout and 2.54 mm lead pitch. The drain-connected tab requires electrical isolation (e.g., mica washer + thermal paste) when mounted to a grounded heatsink. Mounting torque must not exceed 0.5 N·m to avoid package cracking or bond wire damage.

SIHP24N65E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2740 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP24N65E-E3 FAQ

1.How can I place an order for SIHP24N65E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP24N65E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP24N65E-E3 reliable?

The price and inventory of SIHP24N65E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP24N65E-E3 is usually 5 days.

3.What payment methods are accepted for SIHP24N65E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP24N65E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP24N65E-E3?

SIHP24N65E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP24N65E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP24N65E-E3?

For technical support, including SIHP24N65E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP24N65E-E3 requirements.

6.How does Aetrix verify that SIHP24N65E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP24N65E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP24N65E-E3 meets industry standards.

7.What is the process for return or replacement of SIHP24N65E-E3?

All SIHP24N65E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP24N65E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP24N65E-E3 part is unused and in its original packaging.

Return procedure for SIHP24N65E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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