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Vishay Siliconix SIHP24N65EF-GE3
- Part No.:
- SIHP24N65EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SIHP24N65EF-GE3.pdf
- Description:
- MOSFET N-CH 650V 24A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:6,873
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Product details
Overview
SIHP24N65EF-GE3 from Vishay Siliconix is a 650 V, 24 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring fast body diode (trr = 170 ns, Qrr = 1.4 µC), ultra-low gate charge (Qg = 81 nC typ.), and low RDS(on) of 0.13 Ω at VGS = 10 V. It is engineered for high-efficiency, high-frequency switching in solar inverters and phase-shifted bridge SMPS.
For engineers reviewing the SIHP24N65EF-GE3 datasheet, SIHP24N65EF-GE3 pinout, SIHP24N65EF-GE3 application, or SIHP24N65EF-GE3 equivalent, key selection criteria include avalanche energy rating (EAS = 691 mJ), dV/dt ruggedness (37 V/ns), and fast reverse recovery performance critical for ZVS topologies and PV inverter leg switching.
Technical Context
This MOSFET employs Vishay's E Series technology to optimize switching efficiency via reduced Qrr, trr, and IRRM-enabling lower turn-off losses in hard- and soft-switching converters. Its low Ciss (2656 pF) and Co(er) (96 pF) support stable gate drive and reduced capacitive losses at high dv/dt.
The device integrates an avalanche-rated body diode with controlled reverse recovery (dI/dt = 100 A/µs, VR = 25 V), making it suitable for unclamped inductive switching and resonant topologies where diode conduction occurs during dead time.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V DC bus designs with 30 % margin for transient overvoltage in solar inverters and telecom PSUs |
| RDS(on) max | 0.156 Ω at VGS = 10 V, TJ = 25 °C - enables <1.8 W conduction loss at 12 A continuous current |
| Qg max | 122 nC - reduces gate driver power requirement and allows use of lower-cost drivers in 100–300 kHz SMPS |
| trr / Qrr | 170 ns / 1.4 µC - minimizes diode reverse recovery loss and EMI in phase-shifted full-bridge and LCC resonant converters |
| EAS | 691 mJ - provides robust single-pulse avalanche capability for inductive load switching without external snubbers |
| RthJC | 0.5 °C/W - enables high-power dissipation (250 W) with standard heatsink mounting in industrial power modules |
Pinout & Package
SIHP24N65EF-GE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized lead spacing (2.54 mm), and heatsink-compatible mounting hole. The package meets JEDEC TO-220AB mechanical specifications (Document 71195) and supports >250 W thermal dissipation with proper heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal for channel modulation | Low-input-capacitance node (Ciss = 2656 pF); requires <122 nC charge for full enhancement; sensitive to ESD (±20 V rating) |
| D (Drain) | Main high-side current path and thermal interface | Internally connected to metal tab; electrically isolated from mounting surface per TO-220AB spec; carries full load current and dissipates heat directly to heatsink |
| S (Source) | Reference node for gate drive and current return | Common connection point for source current and gate drive return; must be routed with low inductance to minimize ringing during switching |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 170 ns and Qrr = 1.4 µC enable efficient synchronous rectification and ZVS operation without external diodes |
| Low Qg × RDS(on) FOM | 122 nC × 0.156 Ω = 19.0 - benchmark figure-of-merit for high-voltage MOSFETs targeting high-frequency efficiency |
| Avalanche rated | EAS = 691 mJ ensures reliable operation under unclamped inductive switching stress without derating |
| dV/dt ruggedness | 37 V/ns at TJ = 125 °C prevents false turn-on during high-speed voltage transients in bridge-leg configurations |
Applications
| Solar Photovoltaic Inverters | Phase-Shifted Bridge SMPS |
|---|---|
Use Scenario: Used in the H-bridge output stage of string inverters converting 600–1000 V DC to 230 V AC. IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional current flow and body-diode commutation during zero-voltage switching intervals. Use Value: Fast trr and low Qrr reduce switching losses by up to 35 % compared to standard 650 V MOSFETs, improving inverter efficiency above 98 %. | Use Scenario: Employed in primary-side switches of telecom server PSUs operating at 200–300 kHz with ZVS control. IC Role / Device Role / Timing Role: Main power switch enabling soft switching via resonant tank; body diode conducts during dead time before complementary switch turns on. Use Value: Low Coss(tr) = 333 pF and controlled dV/dt ensure predictable ZVS timing and reduced voltage overshoot across the drain-source node. |
| HID Lighting Ballasts | Industrial Battery Chargers |
Use Scenario: Drives resonant half-bridge in electronic ballasts for 250–1000 W metal halide lamps. IC Role / Device Role / Timing Role: High-frequency switching transistor sustaining repetitive 100–250 kHz operation with high peak currents during lamp ignition. Use Value: Avalanche rating (EAS = 691 mJ) withstands lamp open-circuit transients and ignition surges without failure. | Use Scenario: Used in LLC resonant converter stages of 3 kW EVSE and industrial battery chargers. IC Role / Device Role / Timing Role: Primary-side switch managing high-efficiency power transfer with body-diode conduction during resonant transitions. Use Value: Ultra-low Qg (81 nC typ.) reduces gate drive losses and enables direct microcontroller-level drive with minimal buffer circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW24N65M5 | RDS(on) = 0.145 Ω, Qg = 75 nC, trr = 190 ns, no UIS rating | Lacks avalanche energy rating; requires external clamping in inductive switching | Prefer SIHP24N65EF-GE3 where unclamped inductive stress or reliability-critical operation is required |
| IXFH24N65X2 | RDS(on) = 0.14 Ω, Qg = 78 nC, trr = 150 ns, EAS = 520 mJ | Lower EAS and higher dV/dt sensitivity (28 V/ns) limit robustness in high-noise industrial environments | SIHP24N65EF-GE3 offers superior avalanche margin and higher dV/dt immunity for mission-critical SMPS |
Compared with STW24N65M5 and IXFH24N65X2, SIHP24N65EF-GE3 delivers the highest single-pulse avalanche energy (691 mJ), best dV/dt ruggedness (37 V/ns), and lowest Qrr among 24 A/650 V MOSFETs-making it optimal for ZVS, PV inverter, and welding applications demanding long-term reliability under dynamic stress.
Availability
SIHP24N65EF-GE3 is available at Aetrix Electronics and suitable for solar photovoltaic inverters, phase-shifted bridge power supplies, and industrial battery chargers requiring stable component supply, RoHS-compliant packaging, and long-lifecycle availability.
Supply support for SIHP24N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The E Series Power MOSFET product line-including SIHP24N65EF-GE3-is designed specifically for high-efficiency, high-frequency switch-mode power conversion in renewable energy, telecom, and industrial systems.
FAQ
What is the maximum continuous drain current rating for SIHP24N65EF-GE3 at 100 °C case temperature?
The SIHP24N65EF-GE3 has a continuous drain current rating of 15 A at TC = 100 °C, derated linearly from 24 A at TC = 25 °C using a 2 W/°C derating factor. This reflects its thermal design for high-power density applications where heatsink temperature exceeds ambient, such as enclosed industrial power supplies.
Does SIHP24N65EF-GE3 have a fully rated avalanche capability, and what is its EAS value?
Yes, SIHP24N65EF-GE3 is fully rated for single-pulse avalanche with EAS = 691 mJ under specified test conditions (VDD = 50 V, L = 28.2 mH, Rg = 25 Ω, IAS = 7 A). This rating is validated per JEDEC standards and enables reliable operation in unclamped inductive switching without external protection components.
What is the typical gate-to-source threshold voltage range for SIHP24N65EF-GE3?
The SIHP24N65EF-GE3 has a gate-to-source threshold voltage (VGS(th)) range of 2 V to 4 V at TJ = 25 °C and ID = 250 µA. This ensures robust turn-on with standard 10 V gate drive while maintaining noise immunity in high-dV/dt environments typical of bridge configurations.
How does the fast body diode of SIHP24N65EF-GE3 improve performance in resonant topologies?
The SIHP24N65EF-GE3 features a fast body diode with trr = 170 ns and Qrr = 1.4 µC, reducing reverse recovery losses and associated EMI in resonant converters like LLC and phase-shifted bridges. This allows precise ZVS timing and improves system efficiency by minimizing shoot-through risk and voltage spikes during dead-time conduction.
Is SIHP24N65EF-GE3 lead (Pb)-free and halogen-free, and which compliance standards does it meet?
Yes, SIHP24N65EF-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and JEDEC JS709A standards. The "-GE3" suffix explicitly denotes Vishay's Green Electronics packaging, verified per material categorization document 99912.
SIHP24N65EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 156mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 122 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2656 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SIHP24N65EF-GE3 FAQ
1.How can I place an order for SIHP24N65EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHP24N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHP24N65EF-GE3 reliable?
The price and inventory of SIHP24N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP24N65EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHP24N65EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP24N65EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHP24N65EF-GE3?
SIHP24N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHP24N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHP24N65EF-GE3?
For technical support, including SIHP24N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP24N65EF-GE3 requirements.
6.How does Aetrix verify that SIHP24N65EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHP24N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP24N65EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHP24N65EF-GE3?
All SIHP24N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP24N65EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHP24N65EF-GE3 part is unused and in its original packaging.
Return procedure for SIHP24N65EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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