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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP24N65E-GE3

Name: SIHP24N65E-GE3
Brand: Vishay Siliconix
SKU: SIHP24N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP24N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP24N65E-GE3.pdf

Description:: MOSFET N-CH 650V 24A TO220AB

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Product details

Overview

SIHP24N65E-GE3 from Vishay Siliconix is a 650 V, 24 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.145 Ω @ V_GS = 10 V, Q_g = 122 nC, and E_AS = 508 mJ. It serves as a high-voltage switching device in PFC and main-switch stages of server/telecom SMPS.

For engineers reviewing the SIHP24N65E-GE3 datasheet, SIHP24N65E-GE3 pinout, SIHP24N65E-GE3 application, or SIHP24N65E-GE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for ZVS/ZCS compatibility, thermal resistance (R_thJC = 0.5 °C/W), and 650 V blocking capability under repetitive UIS stress.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage hard-switching and resonant topologies. Its low C_iss (2740 pF) and ultra-low Q_gd/Q_g ratio (37/122 nC) reduce Miller-induced turn-off delay and improve controllability at high dV/dt (37 V/ns).

The integrated body diode supports bidirectional conduction in bridge configurations, with t_rr = 433 ns and Q_rr = 7.3 μC at I_F = 12 A - enabling use in synchronous rectification and active clamp circuits where reverse recovery behavior impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with ≥30 % voltage margin for transient overvoltage in telecom/server PFC stages
R_DS(on) max	0.145 Ω @ 10 V - enables <2.1 W conduction loss at 12 A continuous drain current (T_C = 100 °C)
Q_g max	122 nC - determines gate driver power requirement (~1.22 mW per MHz at 10 V swing) and influences switching speed control
E_AS	508 mJ - specifies single-pulse unclamped inductive switching robustness without external snubber in flyback or LLC primary switches
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤125 °C junction rise above case, supporting forced-air-cooled 1–3 kW power stages
t_rr	433 ns - defines minimum dead-time requirement in half-bridge operation to avoid shoot-through during diode commutation
I_D continuous	24 A @ T_C = 25 °C - sets maximum RMS current capability in thermally constrained TO-220AB mounting without heatsink derating

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical lead frame. Mounting hole centered on tab; leads spaced 2.54 mm, pitch 5.08 mm. Tab electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 2740 pF requires ≥1 A peak gate driver for 25 ns turn-on
D (Drain)	High-side power output	Connected to TO-220AB metal tab; must be electrically isolated from heatsink unless system ground referenced
S (Source)	Power return reference	Serves as local ground reference for gate drive; source inductance directly impacts switching stability and dI/dt control

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	17.7 Ω·nC - balances conduction and switching losses for optimal efficiency in 100–300 kHz PFC boost converters
Avalanche-rated (UIS)	508 mJ single-pulse energy - eliminates need for external clamping in inductive load switching applications like motor drives
Ultra-low Q_gd	37 nC - minimizes Miller plateau duration, improving hard-switching timing predictability and reducing gate drive losses
Low C_iss	2740 pF - reduces capacitive loading on gate drivers and improves high-frequency gate control fidelity
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C - meets environmental requirements for industrial and telecom end equipment

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter operating at 100 kHz in 3 kW front-end AC/DC unit with 400 V DC output. IC Role / Device Role / Timing Role: Main switch handling full line-frequency rectified input; conducts during duty cycle, blocks during off-time with 650 V rating. Use Value: Low R_DS(on) and Q_g reduce total losses by ~12 % vs. legacy 600 V MOSFETs, enabling higher power density without fan derating.	Use Scenario: High-efficiency 48 V output rectifier in -48 V telecom system with hold-up time >20 ms. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; subjected to ZVS transitions and repetitive UIS events. Use Value: 508 mJ E_AS withstands worst-case fault currents without failure, extending field reliability beyond 10 years MTBF.
Solar PV Inverter DC Link	Industrial Motor Drive Inverter
Use Scenario: DC/AC stage in string inverter converting 600–1000 V DC to 230 V AC with transformerless topology. IC Role / Device Role / Timing Role: High-side switch in three-phase inverter leg; exposed to fast dV/dt (>30 V/ns) and reverse recovery stress from freewheeling diodes. Use Value: 433 ns t_rr and controlled Q_rr minimize voltage overshoot and EMI generation during commutation, easing filter design.	Use Scenario: 7.5 kW variable-frequency drive powering HVAC compressors with regenerative braking. IC Role / Device Role / Timing Role: Inverter switch handling 24 A RMS output current; subjected to repetitive inductive turn-off stress and body diode conduction during regeneration. Use Value: 0.5 °C/W R_thJC enables direct heatsink mounting with <10 K temperature rise at full load, eliminating thermal interface material complexity.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter operating at 100 kHz in 3 kW front-end AC/DC unit with 400 V DC output.

IC Role / Device Role / Timing Role: Main switch handling full line-frequency rectified input; conducts during duty cycle, blocks during off-time with 650 V rating.

Use Value: Low R_DS(on) and Q_g reduce total losses by ~12 % vs. legacy 600 V MOSFETs, enabling higher power density without fan derating.

Use Scenario: High-efficiency 48 V output rectifier in -48 V telecom system with hold-up time >20 ms.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; subjected to ZVS transitions and repetitive UIS events.

Use Value: 508 mJ E_AS withstands worst-case fault currents without failure, extending field reliability beyond 10 years MTBF.

Solar PV Inverter DC Link

Industrial Motor Drive Inverter

Use Scenario: DC/AC stage in string inverter converting 600–1000 V DC to 230 V AC with transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in three-phase inverter leg; exposed to fast dV/dt (>30 V/ns) and reverse recovery stress from freewheeling diodes.

Use Value: 433 ns t_rr and controlled Q_rr minimize voltage overshoot and EMI generation during commutation, easing filter design.

Use Scenario: 7.5 kW variable-frequency drive powering HVAC compressors with regenerative braking.

IC Role / Device Role / Timing Role: Inverter switch handling 24 A RMS output current; subjected to repetitive inductive turn-off stress and body diode conduction during regeneration.

Use Value: 0.5 °C/W R_thJC enables direct heatsink mounting with <10 K temperature rise at full load, eliminating thermal interface material complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW24N65M5	650 V, 24 A, R_DS(on) = 0.135 Ω, Q_g = 95 nC, D²PAK package	Lower gate charge but non-isolated package requires insulating washer; lacks documented UIS rating	Preferred for space-constrained PCB layouts where thermal via count can compensate for higher R_thJA
IXFH24N65X2	650 V, 24 A, R_DS(on) = 0.125 Ω, Q_g = 105 nC, TO-247AC package	Higher PD (312 W), lower R_thJC (0.42 °C/W), but larger footprint and higher cost	Chosen when >250 W continuous dissipation or enhanced avalanche margin is required beyond SIHP24N65E-GE3's 508 mJ

Compared with STW24N65M5 and IXFH24N65X2, the SIHP24N65E-GE3 offers best-in-class FOM for TO-220AB form factor, balanced avalanche ruggedness, and halogen-free compliance - making it optimal for cost-sensitive, thermally managed 1–3 kW industrial and telecom power supplies.

Availability

SIHP24N65E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHP24N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The SIHP24N65E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage switching in hard- and soft-switching SMPS topologies where low gate charge and avalanche capability are critical.

FAQ

What is the maximum continuous drain current rating for SIHP24N65E-GE3 at 100 °C case temperature?

The SIHP24N65E-GE3 supports 16 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within its 0.5 °C/W junction-to-case thermal resistance. The SIHP24N65E-GE3 maintains R_DS(on) stability up to 150 °C junction temperature.

Does SIHP24N65E-GE3 have a fully rated avalanche capability, and what test conditions apply?

Yes, the SIHP24N65E-GE3 is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 508 mJ. Per datasheet note b, this is measured at V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 6 A. The SIHP24N65E-GE3 does not specify repetitive UIS rating.

What is the gate threshold voltage range for SIHP24N65E-GE3, and how does it affect drive circuit design?

The SIHP24N65E-GE3 has a V_GS(th) range of 2 V to 4 V at I_D = 250 μA. This wide threshold supports robust noise immunity while ensuring full enhancement at 10 V gate drive. For reliable switching, the SIHP24N65E-GE3 requires ≥8 V to achieve specified R_DS(on), and gate drive must avoid floating conditions near 3 V to prevent linear-mode operation.

How does the body diode performance of SIHP24N65E-GE3 compare to standard FRDs in PFC applications?

The SIHP24N65E-GE3 body diode exhibits t_rr = 433 ns and Q_rr = 7.3 μC at I_F = 12 A, which is slower than dedicated fast recovery diodes but sufficient for discontinuous conduction mode (DCM) PFC. In continuous conduction mode (CCM), the SIHP24N65E-GE3 body diode may increase losses; external diodes are recommended for >100 kHz CCM designs.

Is SIHP24N65E-GE3 compatible with standard TO-220 heatsinks, and what mounting considerations apply?

Yes, the SIHP24N65E-GE3 uses industry-standard TO-220AB mechanical dimensions and is compatible with common TO-220 heatsinks. However, its drain-connected tab requires electrical isolation (e.g., mica washer + thermal paste) unless the heatsink is system-ground referenced. Mounting torque must not exceed 0.5 N·m to avoid package damage - a critical specification for long-term SIHP24N65E-GE3 reliability.

SIHP24N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2740 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP24N65E-GE3 FAQ

1.How can I place an order for SIHP24N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP24N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP24N65E-GE3 reliable?

The price and inventory of SIHP24N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP24N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP24N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP24N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP24N65E-GE3?

SIHP24N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP24N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP24N65E-GE3?

For technical support, including SIHP24N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP24N65E-GE3 requirements.

6.How does Aetrix verify that SIHP24N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP24N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP24N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP24N65E-GE3?

All SIHP24N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP24N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP24N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHP24N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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