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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP24N80AEF-GE3

Name: SIHP24N80AEF-GE3
Brand: Vishay Siliconix
SKU: SIHP24N80AEF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP24N80AEF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP24N80AEF-GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP24N80AEF-GE3 from Vishay Siliconix is an 800 V, 20 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.170 Ω R_DS(on) at V_GS = 10 V, 90 nC total gate charge, and avalanche-rated ruggedness for high-voltage switching in PFC and SMPS stages.

For engineers reviewing the SIHP24N80AEF-GE3 datasheet, SIHP24N80AEF-GE3 pinout, SIHP24N80AEF-GE3 application, or SIHP24N80AEF-GE3 equivalent, key selection criteria include its fast body diode (t_rr = 127 ns), low Co(er) = 51 pF, and UIS-rated E_AS = 127 mJ - critical for hard-switched industrial and telecom power converters.

Technical Context

This device employs planar stripe silicon technology optimized for high-voltage operation with controlled dv/dt immunity (100 V/ns at T_J = 125 °C) and robust unclamped inductive switching capability. Its gate threshold voltage range (2–4 V) ensures stable turn-on under wide temperature and drive conditions.

The integrated fast-recovery body diode supports synchronous rectification and ZVS transitions in resonant topologies. Dynamic parameters - including Q_gd/Q_g = 28/90 nC and C_oss(er) = 51 pF - are tuned to minimize switching loss trade-offs in 640 V bus applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 640 V DC bus designs with 25 % safety margin for voltage transients
R_DS(on) typ	0.170 Ω at V_GS = 10 V, I_D = 10 A - enables <1.7 W conduction loss at 10 A continuous current
Q_g max	90 nC - determines gate driver power requirement and switching speed in 100–500 kHz PFC stages
E_AS	127 mJ - guarantees single-pulse avalanche survivability during overcurrent fault events without derating
t_rr	127 ns - reduces diode recovery loss and EMI in hard-switched bridge legs
R_thJC	0.6 °C/W - allows 208 W power dissipation with ≤120 °C case-to-ambient ΔT using standard heatsinking
Co(er)	51 pF - lowers output energy loss (E_oss) during turn-off, improving efficiency in high-frequency SMPS

Pinout & Package

TO-220AB package with isolated drain tab; standard through-hole mounting; lead (Pb)-free and halogen-free per Vishay S21-1193-Rev. A.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≥10 V drive for full R_DS(on) specification; max ±30 V rating
D	Drain	Main high-side switching node; electrically connected to metal tab; must be insulated from heatsink unless common-drain topology
S	Source	Power return path and gate reference; ties to PCB ground plane; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	15.3 Ω·nC - balances conduction and switching losses for optimal 640 V PFC efficiency
Avalanche-rated (UIS)	127 mJ single-pulse rating - eliminates need for external snubbers in inductive load switching
Fast body diode	t_rr = 127 ns, Q_rr = 0.8 μC - enables reliable operation in quasi-resonant and LLC converters
Low effective output capacitance	C_o(er) = 51 pF - reduces turn-off energy loss and improves light-load efficiency
High dv/dt immunity	100 V/ns at T_J = 125 °C - suppresses false turn-on in high-noise, high-dV/dt environments

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 48 V input, 380 V boost PFC stage of 2 kW server PSU. IC Role / Device Role / Timing Role: High-voltage switch controlling inductor current in continuous conduction mode (CCM) boost converter. Use Value: Low R_DS(on) and Q_g reduce thermal stress and enable >96 % PFC efficiency at full load.	Use Scenario: Output rectification and isolation in 3 kW telecom -48 V DC/DC front-end with active clamp forward topology. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side high-frequency transformer interface. Use Value: Fast body diode and low Q_rr minimize reverse recovery loss during zero-voltage switching transitions.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string-level 1000 V PV inverter with two-stage conversion architecture. IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter leg handling up to 800 V DC bus. Use Value: 800 V V_DS rating and 127 mJ E_AS ensure reliability against solar array transient surges.	Use Scenario: Brake chopper and DC bus switching in 7.5 kW variable frequency drive for HVAC compressors. IC Role / Device Role / Timing Role: Energy-dissipating switch clamping regenerated motor energy into braking resistor. Use Value: Robust avalanche capability and 208 W PD rating support repetitive 100 ms brake pulses without thermal runaway.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 48 V input, 380 V boost PFC stage of 2 kW server PSU.

IC Role / Device Role / Timing Role: High-voltage switch controlling inductor current in continuous conduction mode (CCM) boost converter.

Use Value: Low R_DS(on) and Q_g reduce thermal stress and enable >96 % PFC efficiency at full load.

Use Scenario: Output rectification and isolation in 3 kW telecom -48 V DC/DC front-end with active clamp forward topology.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side high-frequency transformer interface.

Use Value: Fast body diode and low Q_rr minimize reverse recovery loss during zero-voltage switching transitions.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string-level 1000 V PV inverter with two-stage conversion architecture.

IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter leg handling up to 800 V DC bus.

Use Value: 800 V V_DS rating and 127 mJ E_AS ensure reliability against solar array transient surges.

Use Scenario: Brake chopper and DC bus switching in 7.5 kW variable frequency drive for HVAC compressors.

IC Role / Device Role / Timing Role: Energy-dissipating switch clamping regenerated motor energy into braking resistor.

Use Value: Robust avalanche capability and 208 W PD rating support repetitive 100 ms brake pulses without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80ZFP	800 V, 20 A, R_DS(on) = 0.22 Ω, Q_g = 100 nC, no specified E_AS rating	Lacks avalanche energy rating; higher R_DS(on) increases conduction loss by ~29 % at 10 A	Acceptable where system-level protection limits inductive energy; verify layout for higher gate drive demand.
IXTH24N80L	800 V, 24 A, R_DS(on) = 0.195 Ω, Q_g = 110 nC, E_AS = 100 mJ	Lower current rating margin but higher Q_g; E_AS 21 % lower than SIHP24N80AEF-GE3	Preferred when higher ID rating is needed; confirm gate driver can supply 110 nC without excessive rise time.

Compared with STW20NK80ZFP and IXTH24N80L, SIHP24N80AEF-GE3 delivers superior FOM (15.3 vs. 22.0 and 21.5 Ω·nC), highest E_AS, and lowest Co(er), making it optimal for high-efficiency, high-reliability 640–800 V switching where diode recovery and avalanche ruggedness are design-critical.

Availability

SIHP24N80AEF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHP24N80AEF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The EF Series - including SIHP24N80AEF-GE3 - is engineered for high-voltage, high-frequency switching in industrial and communications power systems where fast body diode performance and avalanche reliability are mandatory.

FAQ

What is the maximum continuous drain current rating for SIHP24N80AEF-GE3 at 100 °C case temperature?

The SIHP24N80AEF-GE3 has a continuous drain current rating of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHP24N80AEF-GE3 must be mounted on an adequately sized heatsink to maintain this current capability.

Does SIHP24N80AEF-GE3 have a fully rated avalanche energy specification?

Yes, the SIHP24N80AEF-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 127 mJ, tested under standardized conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3 A). This rating is explicitly guaranteed in the datasheet and applies directly to the SIHP24N80AEF-GE3 without derating.

What is the typical reverse recovery time (t_rr) of the body diode in SIHP24N80AEF-GE3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHP24N80AEF-GE3 is 127 ns, measured at T_J = 25 °C, I_F = I_S = 10 A, di/dt = 100 A/μs, and V_R = 400 V. This value is confirmed in the Specifications table and is a key differentiator for high-frequency switching applications where diode recovery loss dominates efficiency.

Is SIHP24N80AEF-GE3 compatible with standard TO-220AB footprints and mounting hardware?

Yes, the SIHP24N80AEF-GE3 uses the industry-standard TO-220AB package with 3-pin configuration (G-D-S), identical mechanical dimensions and mounting hole pattern to JEDEC TO-220AB. It features an isolated drain tab and is compatible with standard insulating washers and thermal pads used in TO-220-based power designs.

What gate-source voltage range is required to fully enhance SIHP24N80AEF-GE3?

The SIHP24N80AEF-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2–4 V, but full enhancement - defined as achieving the specified R_DS(on) of 0.170 Ω - requires V_GS ≥ 10 V. The device is not logic-level; driving below 10 V results in significantly higher on-resistance and increased conduction loss.

SIHP24N80AEF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 195mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1889 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP24N80AEF-GE3 FAQ

1.How can I place an order for SIHP24N80AEF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP24N80AEF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP24N80AEF-GE3 reliable?

The price and inventory of SIHP24N80AEF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP24N80AEF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP24N80AEF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP24N80AEF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP24N80AEF-GE3?

SIHP24N80AEF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP24N80AEF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP24N80AEF-GE3?

For technical support, including SIHP24N80AEF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP24N80AEF-GE3 requirements.

6.How does Aetrix verify that SIHP24N80AEF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP24N80AEF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP24N80AEF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP24N80AEF-GE3?

All SIHP24N80AEF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP24N80AEF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP24N80AEF-GE3 part is unused and in its original packaging.

Return procedure for SIHP24N80AEF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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