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Vishay Siliconix SIHP25N40D-E3
- Part No.:
- SIHP25N40D-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SIHP25N40D-E3.pdf
- Description:
- MOSFET N-CH 400V 25A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:53
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Product details
Overview
SIHP25N40D-E3 from Vishay Siliconix is a 400 V, 25 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.17 Ω max RDS(on) at VGS = 10 V, 88 nC total gate charge, and 556 mJ single-pulse avalanche energy - designed for high-efficiency switching in industrial SMPS and motor drives.
For engineers reviewing the SIHP25N40D-E3 datasheet, SIHP25N40D-E3 pinout, SIHP25N40D-E3 application, or SIHP25N40D-E3 equivalent, key selection criteria include its 400 V VDS rating, low 0.14 Ω typ RDS(on), fast 21 ns turn-on delay, robust body diode (353 ns trr), and RoHS-compliant lead-free construction.
Technical Context
This MOSFET employs planar silicon technology with optimized cell layout to achieve low area-specific on-resistance and reduced input capacitance (1707 pF Ciss). Its gate threshold voltage range (3–5 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.
The device integrates an avalanche-rated body diode with 1.2 V forward voltage at 13 A and supports unclamped inductive switching up to 556 mJ. Thermal resistance from junction-to-case is 0.45 °C/W, enabling high-power operation with minimal heatsink requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Max | 400 V - supports 380 VAC rectified bus designs with 5% margin |
| RDS(on) Max @ 10 V | 0.17 Ω - limits conduction loss to ≤2.8 W at 13 A continuous |
| Qg Max | 88 nC - determines gate driver current requirement (~1.8 A peak for 50 ns rise) |
| EAS | 556 mJ - enables robust operation in inductive load switching without snubbers |
| Ciss | 1707 pF - contributes to low capacitive switching losses at 100 kHz+ frequencies |
| trr | 353 ns - defines minimum dead-time requirement in synchronous rectification |
| RthJC | 0.45 °C/W - allows 278 W dissipation with ≤125 °C case temperature rise |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 16.1 mm × 10.6 mm footprint, and 4.8 mm height. Tab electrically connected to drain for direct heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level signal; 12 nC Qgs enables fast turn-on with low drive power |
| D (Drain) | High-side power terminal | Connected to heatsink tab; handles 400 V blocking and 78 A pulsed current |
| S (Source) | Power return and reference | Common node for gate drive return and current sensing; 24 A continuous diode conduction capability |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | 15.0 Ω·nC - improves efficiency in hard-switched 100–500 kHz SMPS topologies |
| Avalanche-rated operation | 556 mJ EAS - eliminates need for external clamping in welder and induction heater primary switches |
| High body diode ruggedness | 353 ns trr, 4.4 μC Qrr - reduces reverse recovery stress in flyback and LLC secondary side |
| RoHS-compliant lead-free | E3 suffix - meets EU Directive 2011/65/EU; no exemptions required for Pb termination |
| Fast switching performance | 21 ns td(on), 57 ns tr - enables high-frequency operation with minimized overlap losses |
Applications
| Industrial Motor Drives | Plasma/LCD TV Power Supplies |
|---|---|
Use Scenario: Half-bridge inverter stage for 0.5–2 kW AC induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus and 25 A RMS load current. Use Value: 0.17 Ω RDS(on) minimizes I²R losses at full load; 556 mJ EAS withstands motor stall transients. |
Use Scenario: PFC boost switch and main DC-DC converter switch in 200–400 W flat-panel display power supplies. IC Role / Device Role / Timing Role: Primary-side power switch operating at 65–135 kHz with zero-voltage switching assist. Use Value: Low Ciss (1707 pF) and fast tr (57 ns) reduce switching losses; 1.2 V VSD enables efficient synchronous rectification. |
| Induction Heating Systems | Industrial Battery Chargers |
Use Scenario: Resonant half-bridge in 3–10 kW domestic and commercial cooktops. IC Role / Device Role / Timing Role: High-frequency switching device subjected to repetitive unclamped inductive energy recovery. Use Value: Avalanche rating (556 mJ) and 24 V/ns dV/dt capability ensure reliability under ZVS/ZCS transitions and load mismatch. |
Use Scenario: Isolated DC-DC stage in 48 V/100 A telecom and EVSE battery chargers. IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge topology operating at 100 kHz. Use Value: 0.45 °C/W RthJC enables >95% efficiency at full load; 353 ns trr supports precise dead-time control to prevent shoot-through. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP24N40FIAG | RDS(on) = 0.18 Ω (max), Qg = 95 nC, TO-220FP package (isolated tab) | Higher gate charge increases driver loss; same VDS/ID rating but lower avalanche energy (420 mJ) | Prefer SIHP25N40D-E3 where avalanche robustness and lower switching loss are critical |
| IXTH24N40L2 | RDS(on) = 0.19 Ω (max), Qg = 72 nC, TO-247AC package (higher thermal mass) | Lower Qg improves high-frequency efficiency; larger package requires PCB redesign | Choose IXTH24N40L2 only when higher thermal capacity justifies TO-247 footprint change |
Compared with STP24N40FIAG and IXTH24N40L2, SIHP25N40D-E3 delivers superior avalanche ruggedness (556 mJ vs. ≤420 mJ) and lowest RDS(on) × Qg figure-of-merit (15.0 Ω·nC), making it optimal for high-reliability industrial switching where transient immunity and conduction efficiency are jointly prioritized.
Availability
SIHP25N40D-E3 is available at Aetrix Electronics and suitable for industrial motor drives, induction heating systems, and high-power SMPS requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SIHP25N40D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The D Series Power MOSFETs, including SIHP25N40D-E3, were engineered for high-voltage industrial switching applications demanding low conduction loss, fast switching, and repeatable avalanche capability - especially in welders, induction heaters, and server PSUs.
FAQ
What is the maximum continuous drain current rating for SIHP25N40D-E3 at 100 °C case temperature?
The SIHP25N40D-E3 has a maximum continuous drain current of 16 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHP25N40D-E3 maintains stable RDS(on) performance across this range due to its positive VDS temperature coefficient.
Does SIHP25N40D-E3 support logic-level gate drive?
No, SIHP25N40D-E3 is not a logic-level MOSFET; its gate threshold voltage ranges from 3 V to 5 V, and it is characterized for RDS(on) at VGS = 10 V. Driving the SIHP25N40D-E3 with only 5 V may result in incomplete turn-on and excessive conduction loss. Standard 10 V gate drivers are required to achieve the specified 0.17 Ω max RDS(on).
What is the thermal resistance from junction to case for SIHP25N40D-E3?
The SIHP25N40D-E3 has a maximum junction-to-case thermal resistance (RthJC) of 0.45 °C/W, measured from junction to the drain tab. This value enables the SIHP25N40D-E3 to dissipate up to 278 W at TC = 25 °C, making it suitable for high-power applications when mounted on appropriately sized heatsinks with low thermal interface resistance.
Is SIHP25N40D-E3 suitable for avalanche-prone circuits like welders or motor drives?
Yes, the SIHP25N40D-E3 is explicitly rated for unclamped inductive switching with a guaranteed single-pulse avalanche energy (EAS) of 556 mJ. This specification was validated per JEDEC standards using the test conditions in Note b (VDD = 50 V, L = 2.3 mH, Rg = 25 Ω). The SIHP25N40D-E3 is routinely deployed in welder primary switches and motor drive inverters where such transients occur.
What is the reverse recovery time (trr) of the integrated body diode in SIHP25N40D-E3?
The SIHP25N40D-E3 body diode has a typical reverse recovery time (trr) of 353 ns, measured at TJ = 25 °C, IF = 13 A, dI/dt = 100 A/μs, and VR = 20 V. This parameter directly impacts dead-time design in synchronous rectifier and half-bridge configurations. The SIHP25N40D-E3's trr is confirmed in the "Drain-Source Body Diode Characteristics" section of the datasheet.
SIHP25N40D-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 170mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 88 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1707 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 278W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SIHP25N40D-E3 FAQ
1.How can I place an order for SIHP25N40D-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHP25N40D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHP25N40D-E3 reliable?
The price and inventory of SIHP25N40D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP25N40D-E3 is usually 5 days.
3.What payment methods are accepted for SIHP25N40D-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP25N40D-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHP25N40D-E3?
SIHP25N40D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHP25N40D-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHP25N40D-E3?
For technical support, including SIHP25N40D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP25N40D-E3 requirements.
6.How does Aetrix verify that SIHP25N40D-E3 is sourced from the original manufacturer or authorized distributors?
All SIHP25N40D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP25N40D-E3 meets industry standards.
7.What is the process for return or replacement of SIHP25N40D-E3?
All SIHP25N40D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP25N40D-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHP25N40D-E3 part is unused and in its original packaging.
Return procedure for SIHP25N40D-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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