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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP25N40D-GE3

Name: SIHP25N40D-GE3
Brand: Vishay Siliconix
SKU: SIHP25N40D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP25N40D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP25N40D-GE3.pdf

Description:: MOSFET N-CH 400V 25A TO220AB

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Product details

Overview

SIHP25N40D-GE3 from Vishay Siliconix is a 400 V, 25 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.17 Ω R_DS(on) at V_GS = 10 V, 88 nC total gate charge, and 556 mJ single-pulse avalanche energy - designed for high-efficiency SMPS, motor drives, and induction heating circuits.

For engineers reviewing the SIHP25N40D-GE3 datasheet, SIHP25N40D-GE3 pinout, SIHP25N40D-GE3 application, or SIHP25N40D-GE3 equivalent, key selection criteria include its 400 V blocking rating, low R_DS(on) × Q_g figure-of-merit (6.8 Ω·nC), rugged body diode with 353 ns reverse recovery time, and RoHS-compliant, halogen-free construction.

Technical Context

This discrete power switch operates as a unidirectional voltage-controlled current regulator in hard-switched topologies. Its 0.14 Ω typical R_DS(on) at 13 A and 10 V gate drive enables low conduction loss in 320–400 V DC-link applications, while 23 nC Q_gd supports fast turn-off with controlled dV/dt (24 V/ns at T_J = 125 °C).

The device integrates a co-packaged body diode rated for 24 A continuous source-drain current and 78 A pulsed current, with 1.2 V forward voltage at 13 A and 25 °C. Its 0.45 °C/W junction-to-case thermal resistance allows direct heatsink mounting for high-power switching up to 278 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	400 V - supports 320 V DC bus designs with 25 % voltage margin for transients
R_DS(on) max @ 10 V	0.17 Ω - limits conduction loss to ≤ 55 W at 25 A continuous drain current
Q_g max	88 nC - determines gate driver power requirement and switching speed trade-off
E_AS	556 mJ - enables robust unclamped inductive switching without failure in motor drive snubbers
R_thJC	0.45 °C/W - permits 122 °C junction rise above case at full 278 W dissipation
V_SD @ 13 A	1.2 V - defines body diode conduction loss during freewheeling in half-bridge configurations
trr	353 ns - sets minimum dead-time requirement to avoid shoot-through in synchronous rectification

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical lead frame, 1.6 mm creepage distance from case, and Pb-free/halogen-free terminations per ordering code -GE3.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 12 nC Q_gs defines Miller plateau duration
D (Drain)	High-side power terminal	Connected to heatsink via isolated tab; carries full load current and withstands 400 V transients
S (Source)	Reference and return path	Common node for gate drive return and current sensing; ties to low-side switch source in bridge topologies

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	6.8 Ω·nC - reduces combined conduction and switching losses in 100–500 kHz SMPS
Avalanche-rated (UIS)	556 mJ - eliminates need for external clamping in inductive load switching
High body diode ruggedness	353 ns trr, 4.4 μC Q_rr - enables reliable freewheeling in motor control H-bridges
Fast switching	21 ns t_d(on), 57 ns t_r, 40 ns t_d(off), 37 ns t_f - supports high-frequency operation with minimal overlap loss
RoHS + Halogen-free	Compliant with Directive 2011/65/EU and JEDEC JS709 - meets global environmental compliance requirements

Applications

Industrial Motor Drives	Induction Heating Systems
Use Scenario: Half-bridge inverter driving 3-phase BLDC or PMSM motors in HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 25 A peak phase current at 400 V DC bus. Use Value: 0.17 Ω R_DS(on) minimizes I²R loss at rated current; 556 mJ E_AS prevents failure during short-circuit events.	Use Scenario: Resonant inverter stage in domestic and commercial induction cooktops operating at 20–50 kHz. IC Role / Device Role / Timing Role: Main switching transistor in series-resonant tank, conducting high di/dt currents with low switching loss. Use Value: 88 nC Q_g enables efficient gate drive at resonant frequency; 24 V/ns dV/dt rating ensures stability under rapid voltage transitions.
Switch-Mode Power Supplies	Battery Chargers
Use Scenario: Primary-side switch in 500–1000 W telecom or server PSUs using LLC or hard-switched flyback topologies. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer across isolation barrier at 100–300 kHz. Use Value: 400 V V_DS rating accommodates 380 V PFC output with margin; 1707 pF C_iss balances EMI and drive loss.	Use Scenario: Output stage switch in 3–6 kW EV on-board chargers converting AC to 400 V DC battery bus. IC Role / Device Role / Timing Role: Synchronous rectifier or primary switch managing bidirectional power flow in dual-active-bridge topology. Use Value: 24 A continuous body diode current supports reverse conduction during ZVS transitions; 1.2 V V_SD reduces freewheeling loss.

Industrial Motor Drives

Induction Heating Systems

Use Scenario: Half-bridge inverter driving 3-phase BLDC or PMSM motors in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 25 A peak phase current at 400 V DC bus.

Use Value: 0.17 Ω R_DS(on) minimizes I²R loss at rated current; 556 mJ E_AS prevents failure during short-circuit events.

Use Scenario: Resonant inverter stage in domestic and commercial induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Main switching transistor in series-resonant tank, conducting high di/dt currents with low switching loss.

Use Value: 88 nC Q_g enables efficient gate drive at resonant frequency; 24 V/ns dV/dt rating ensures stability under rapid voltage transitions.

Switch-Mode Power Supplies

Battery Chargers

Use Scenario: Primary-side switch in 500–1000 W telecom or server PSUs using LLC or hard-switched flyback topologies.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer across isolation barrier at 100–300 kHz.

Use Value: 400 V V_DS rating accommodates 380 V PFC output with margin; 1707 pF C_iss balances EMI and drive loss.

Use Scenario: Output stage switch in 3–6 kW EV on-board chargers converting AC to 400 V DC battery bus.

IC Role / Device Role / Timing Role: Synchronous rectifier or primary switch managing bidirectional power flow in dual-active-bridge topology.

Use Value: 24 A continuous body diode current supports reverse conduction during ZVS transitions; 1.2 V V_SD reduces freewheeling loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24N40FIAG	400 V, 24 A, R_DS(on) = 0.18 Ω, Q_g = 95 nC, TO-220FP package (insulated)	Higher Q_g increases gate drive loss; insulated package adds thermal resistance	Prefer when electrical isolation between heatsink and drain is mandatory
IXTH24N40L2	400 V, 24 A, R_DS(on) = 0.185 Ω, Q_g = 72 nC, TO-247AC package	Lower Q_g improves switching efficiency; larger TO-247 offers better thermal performance but requires PCB rework	Choose for higher power density or improved thermal management where layout allows

Compared with STP24N40FIAG and IXTH24N40L2, SIHP25N40D-GE3 delivers the lowest R_DS(on) × Q_g FOM (6.8 Ω·nC) in TO-220AB, enabling superior efficiency in space-constrained 400 V systems without requiring insulated mounting or board redesign.

Availability

SIHP25N40D-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, induction heating systems, and switch-mode power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHP25N40D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The D Series Power MOSFETs, including SIHP25N40D-GE3, were engineered for high-voltage switching in industrial and consumer power conversion, prioritizing low R_DS(on) × Q_g, avalanche ruggedness, and thermal performance in standard packages.

FAQ

What is the maximum continuous drain current rating for SIHP25N40D-GE3 at 100 °C case temperature?

The SIHP25N40D-GE3 supports 16 A continuous drain current at T_C = 100 °C, derated linearly from 25 A at 25 °C using a 2.2 W/°C factor. This rating assumes proper heatsinking and ambient conditions that maintain case temperature within specification, and it directly reflects the device's thermal design envelope for sustained operation in high-power converters.

Does SIHP25N40D-GE3 have a fully rated avalanche capability, and how is it specified?

Yes, SIHP25N40D-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy of 556 mJ under standardized test conditions (V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, I_AS = 17 A). This specification confirms robustness against inductive kickback in motor drives and SMPS without external protection components.

What is the gate threshold voltage range for SIHP25N40D-GE3, and why does it matter for drive circuit design?

The SIHP25N40D-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3 V to 5 V at T_J = 25 °C. This wide range necessitates gate drive voltages ≥ 10 V to ensure full enhancement and consistent R_DS(on) performance across process and temperature variation, preventing partial turn-on and excessive conduction loss.

How does the body diode performance of SIHP25N40D-GE3 compare to standard silicon diodes in freewheeling applications?

The SIHP25N40D-GE3 body diode exhibits 1.2 V forward voltage at 13 A and 25 °C, with 353 ns reverse recovery time and 4.4 μC Q_rr. While slower than dedicated SiC Schottky diodes, its parameters are optimized for synchronous rectification in hard-switched topologies where moderate recovery characteristics reduce ringing and EMI versus ultrafast diodes.

Is SIHP25N40D-GE3 compatible with standard TO-220 heatsinks, and what thermal interface considerations apply?

Yes, SIHP25N40D-GE3 uses the industry-standard TO-220AB package with an isolated drain tab, allowing direct mounting to common TO-220 heatsinks using thermal paste or pads. Its 0.45 °C/W R_thJC rating assumes optimal mechanical contact; users must verify mounting pressure and surface flatness to achieve published thermal performance without exceeding 150 °C maximum junction temperature.

SIHP25N40D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1707 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP25N40D-GE3 FAQ

1.How can I place an order for SIHP25N40D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP25N40D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP25N40D-GE3 reliable?

The price and inventory of SIHP25N40D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP25N40D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP25N40D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP25N40D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP25N40D-GE3?

SIHP25N40D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP25N40D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP25N40D-GE3?

For technical support, including SIHP25N40D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP25N40D-GE3 requirements.

6.How does Aetrix verify that SIHP25N40D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP25N40D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP25N40D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP25N40D-GE3?

All SIHP25N40D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP25N40D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP25N40D-GE3 part is unused and in its original packaging.

Return procedure for SIHP25N40D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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