Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP25N50E-GE3

Name: SIHP25N50E-GE3
Brand: Vishay Siliconix
SKU: SIHP25N50E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP25N50E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP25N50E-GE3.pdf

Description:: MOSFET N-CH 500V 26A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:558

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP25N50E-GE3 from Vishay Siliconix is a 500 V, 26 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.145 Ω @ V_GS = 10 V, Q_g = 86 nC, and avalanche-rated (E_AS = 273 mJ). It serves as a primary switching device in high-voltage PFC and SMPS stages.

For engineers reviewing the SIHP25N50E-GE3 datasheet, SIHP25N50E-GE3 pinout, SIHP25N50E-GE3 application, or SIHP25N50E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), hard-switching capability, UIS ruggedness, and thermal performance with R_thJC = 0.5 °C/W.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage hard-switched topologies. Its gate charge profile (Q_g = 86 nC, Q_gd = 25 nC) supports controlled turn-on/turn-off transitions, while C_iss = 1980 pF and C_oss = 105 pF enable predictable switching loss estimation.

The integrated body diode exhibits t_rr = 338 ns and Q_rr = 5.3 μC at 25 °C, supporting moderate-frequency recovery in continuous conduction mode PFC. Thermal design is anchored by R_thJC = 0.5 °C/W and maximum T_J = +150 °C operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for voltage transients
R_DS(on) max	0.145 Ω @ V_GS = 10 V - limits conduction loss to ≤ 18.6 W at 12 A continuous drain current
Q_g max	86 nC - determines gate driver power requirement and switching speed trade-off
E_AS	273 mJ - enables unclamped inductive switching without failure under specified test conditions
I_D cont @ T_C = 100 °C	16 A - defines usable current rating with standard heatsink mounting at elevated ambient
R_thJC	0.5 °C/W - allows junction temperature rise of only 80 °C at 160 W dissipation, critical for thermal reliability
V_GS(th)	2.0–4.0 V - ensures robust turn-on with standard 10 V gate drive and immunity to noise-induced false triggering

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration. Mounting requires electrically insulating hardware when heatsink is grounded.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; low input capacitance (C_iss = 1980 pF) reduces driver loading
D (Drain)	High-side power output	Connected to TO-220 tab; must be electrically isolated from heatsink unless system ground referenced
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; source inductance directly impacts switching stability

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	12.4 Ω·nC - balances conduction and switching losses for 65–100 kHz PFC operation
Avalanche energy rated (UIS)	273 mJ - eliminates need for external snubbers in inductive load switching applications
Low C_oss (105 pF)	Reduces capacitive turn-off loss and improves efficiency in high-frequency hard-switched converters
Body diode Q_rr = 5.3 μC	Enables use in synchronous rectification or bidirectional topologies where reverse recovery behavior is critical
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912)

Applications

Power Factor Correction (PFC)	ATX Silver Box SMPS
Use Scenario: Boost converter stage in 500–1000 W server or industrial power supplies operating at 65–100 kHz. IC Role / Device Role / Timing Role: Main switching transistor handling full AC line rectified voltage (up to 400 V DC) and peak currents ≥ 20 A. Use Value: Low R_DS(on) minimizes conduction loss at high RMS current; avalanche rating absorbs boost inductor energy during fault conditions.	Use Scenario: Primary-side switch in dual-forward or half-bridge topology for PC ATX main power rails (3.3 V, 5 V, 12 V). IC Role / Device Role / Timing Role: High-voltage switching element driven by dedicated PWM controller (e.g., UC384x) with 50–100 ns propagation delay tolerance. Use Value: Fast turn-on delay (t_d(on) ≤ 38 ns) and low Q_gd/Q_g ratio improve duty cycle control fidelity and reduce cross-conduction risk.
Two-Stage LED Driver	Industrial Motor Drive Inverter Stage
Use Scenario: High-voltage buck-boost pre-regulator feeding constant-current LED string drivers in streetlight or high-bay fixtures. IC Role / Device Role / Timing Role: Front-end switch managing 300–450 V DC input with 10–20 kHz switching frequency and >95 % efficiency target. Use Value: Low C_iss and C_oss reduce switching loss at partial load; TO-220AB package enables direct bolt-down heatsinking in compact enclosures.	Use Scenario: Low-side IGBT/MOSFET companion in 3-phase inverter output stage for HVAC blowers or pump controllers (≤ 1 kW). IC Role / Device Role / Timing Role: Fast freewheeling path for inductive motor current during PWM dead-time intervals. Use Value: Body diode t_rr = 338 ns and low V_SD = 1.2 V minimize reverse recovery loss and heat generation during commutation.

Power Factor Correction (PFC)

ATX Silver Box SMPS

Use Scenario: Boost converter stage in 500–1000 W server or industrial power supplies operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Main switching transistor handling full AC line rectified voltage (up to 400 V DC) and peak currents ≥ 20 A.

Use Value: Low R_DS(on) minimizes conduction loss at high RMS current; avalanche rating absorbs boost inductor energy during fault conditions.

Use Scenario: Primary-side switch in dual-forward or half-bridge topology for PC ATX main power rails (3.3 V, 5 V, 12 V).

IC Role / Device Role / Timing Role: High-voltage switching element driven by dedicated PWM controller (e.g., UC384x) with 50–100 ns propagation delay tolerance.

Use Value: Fast turn-on delay (t_d(on) ≤ 38 ns) and low Q_gd/Q_g ratio improve duty cycle control fidelity and reduce cross-conduction risk.

Two-Stage LED Driver

Industrial Motor Drive Inverter Stage

Use Scenario: High-voltage buck-boost pre-regulator feeding constant-current LED string drivers in streetlight or high-bay fixtures.

IC Role / Device Role / Timing Role: Front-end switch managing 300–450 V DC input with 10–20 kHz switching frequency and >95 % efficiency target.

Use Value: Low C_iss and C_oss reduce switching loss at partial load; TO-220AB package enables direct bolt-down heatsinking in compact enclosures.

Use Scenario: Low-side IGBT/MOSFET companion in 3-phase inverter output stage for HVAC blowers or pump controllers (≤ 1 kW).

IC Role / Device Role / Timing Role: Fast freewheeling path for inductive motor current during PWM dead-time intervals.

Use Value: Body diode t_rr = 338 ns and low V_SD = 1.2 V minimize reverse recovery loss and heat generation during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24NM50N	R_DS(on) = 0.19 Ω @ 10 V; Q_g = 70 nC; V_DS = 500 V; TO-220FP package (lower PD = 100 W)	Lower power handling due to reduced thermal capability; suitable only for < 150 W continuous operation	Select when lower gate charge prioritized over conduction loss and board space is constrained
IXTH24N50L	R_DS(on) = 0.22 Ω @ 10 V; Q_g = 42 nC; V_DS = 500 V; TO-247AC package; no UIS rating	Lacks avalanche ruggedness; requires external clamping for inductive loads; higher R_thJC = 0.65 °C/W	Prefer for ultra-fast switching where external protection is already implemented and thermal margin is sufficient

Compared with STP24NM50N and IXTH24N50L, SIHP25N50E-GE3 delivers superior thermal performance (R_thJC = 0.5 °C/W), higher continuous current (26 A), and certified UIS capability-making it optimal for unclamped, high-reliability 400 V bus applications without added protection circuitry.

Availability

SIHP25N50E-GE3 is available at Aetrix Electronics and suitable for power factor correction, ATX SMPS, and industrial LED driver designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHP25N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching applications including PFC, SMPS, and motor drives-designed for low FOM, avalanche robustness, and thermally efficient packaging.

FAQ

What is the maximum continuous drain current rating for SIHP25N50E-GE3 at 100 °C case temperature?

The SIHP25N50E-GE3 has a continuous drain current rating of 16 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 26 A rating at 25 °C case temperature, based on a linear derating factor of 0.2 W/°C and R_thJC = 0.5 °C/W. Engineers must verify heatsink design meets this thermal boundary for sustained operation.

Does SIHP25N50E-GE3 support logic-level gate drive?

No, SIHP25N50E-GE3 is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, but it is characterized for R_DS(on) at V_GS = 10 V, and total gate charge (Q_g = 86 nC) is specified under 10 V drive. Using 5 V logic-level drive results in significantly higher R_DS(on) and unreliable switching; a dedicated 10–15 V gate driver is required for SIHP25N50E-GE3.

Is SIHP25N50E-GE3 avalanche-rated, and what does that mean for circuit design?

Yes, SIHP25N50E-GE3 is avalanche energy rated with E_AS = 273 mJ (single-pulse, test condition: V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4.4 A). This rating permits safe operation during unclamped inductive switching events-such as transformer leakage energy or boost inductor flyback-without requiring external snubber networks in many PFC and SMPS designs.

What is the thermal resistance from junction to case (R_thJC) for SIHP25N50E-GE3, and how is it used?

The SIHP25N50E-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 0.5 °C/W, measured from die junction to the TO-220AB drain tab. This value is used to calculate junction temperature rise (ΔT_J = P_D × R_thJC) when mounted to a heatsink, enabling accurate thermal margin assessment. It confirms suitability for high-power-density layouts where minimal thermal interface resistance is critical.

How does the body diode performance of SIHP25N50E-GE3 compare to standard fast recovery diodes?

The SIHP25N50E-GE3 body diode has t_rr = 338 ns and Q_rr = 5.3 μC at 25 °C, with V_SD = 1.2 V at 16.5 A. While slower than purpose-built ultrafast diodes (t_rr < 100 ns), its parameters are optimized for synchronous rectification and freewheeling in medium-frequency (< 150 kHz) converters. Its soft recovery characteristic reduces EMI compared to abrupt-recovery diodes, making it suitable for PFC and motor drive freewheel paths.

SIHP25N50E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1980 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP25N50E-GE3 FAQ

1.How can I place an order for SIHP25N50E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP25N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP25N50E-GE3 reliable?

The price and inventory of SIHP25N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP25N50E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP25N50E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP25N50E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP25N50E-GE3?

SIHP25N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP25N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP25N50E-GE3?

For technical support, including SIHP25N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP25N50E-GE3 requirements.

6.How does Aetrix verify that SIHP25N50E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP25N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP25N50E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP25N50E-GE3?

All SIHP25N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP25N50E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP25N50E-GE3 part is unused and in its original packaging.

Return procedure for SIHP25N50E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …