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Vishay Siliconix SIHP25N60EFL-BE3
- Part No.:
- SIHP25N60EFL-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SIHP25N60EFL-BE3.pdf
- Description:
- N-CHANNEL 600V
- Quantity:
- Payment:
- Shipping:
Inventory:897
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Product details
Overview
SIHP25N60EFL-BE3 from Vishay Siliconix is a 600 V, 25 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring fast body diode (trr = 138 ns typ), low gate charge (Qg = 50 nC typ), and avalanche-rated ruggedness (EAS = 353 mJ). It serves as a primary switching device in high-efficiency 600 V DC-link power stages for telecom and industrial UPS inverters.
For engineers reviewing the SIHP25N60EFL-BE3 datasheet, SIHP25N60EFL-BE3 pinout, SIHP25N60EFL-BE3 application, or SIHP25N60EFL-BE3 equivalent, key selection criteria include RDS(on) = 0.127 Ω @ 10 V, Coss = 137 pF, Qrr = 0.8 μC, dV/dt capability of 70 V/ns, and thermal resistance RthJC = 0.5 °C/W - all critical for hard-switched PFC and LLC resonant converter designs.
Technical Context
This MOSFET employs Vishay's E-series technology to optimize figure-of-merit (RDS(on) × Qg = 6.37 Ω·nC), enabling reduced conduction and switching losses in continuous conduction mode (CCM) topologies. Its fast intrinsic body diode minimizes reverse recovery stress during synchronous rectification and ZVS transitions.
The device supports unclamped inductive switching up to 353 mJ at TJ = 25 °C and operates across -55 °C to +150 °C junction temperature range. Gate threshold voltage (VGS(th) = 3.0–5.0 V) ensures robust noise immunity while remaining compatible with standard 10 V gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V AC input rectified to 565 V DC bus with 5% margin for transient overvoltage |
| RDS(on) typ | 0.127 Ω @ 10 V - delivers ≤ 40 W conduction loss at 25 A ID, enabling compact heatsink design |
| Qg max | 75 nC - determines gate drive power requirement (~1.5 mW per MHz at 10 V swing) |
| trr typ | 138 ns - reduces diode commutation loss and EMI in hard-switched bridge legs |
| EAS | 353 mJ - enables reliable operation under inductive load turn-off without external snubbers |
| RthJC | 0.5 °C/W - allows 250 W dissipation with ≤ 125 °C case-to-junction rise, supporting high-power density layouts |
| Coss | 137 pF - sets output capacitance-related turn-off energy loss (EOSS ≈ 1.6 μJ @ 480 V) |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.6 mm creepage/clearance, Pb-free and halogen-free per Vishay S22-0949-Rev. C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal accepting 10 V logic-level drive; input capacitance Ciss = 2274 pF shapes Miller effect and driver sizing |
| D | Drain | Main high-side power terminal; electrically connected to metal tab for thermal path and high-current return |
| S | Source | Power return and reference node for gate drive; forms common-source configuration with low-inductance layout priority |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 138 ns typ and Qrr = 0.8 μC enable efficient freewheeling in half-bridge LLC and phase-shifted full-bridge converters |
| Low RDS(on) × Qg FOM | 6.37 Ω·nC improves trade-off between conduction loss and switching loss in 65–100 kHz SMPS designs |
| Avalanche energy rating | EAS = 353 mJ permits safe operation during inductive turn-off transients without derating or snubber circuits |
| Low Coss | 137 pF reduces capacitive turn-off loss and improves zero-voltage switching (ZVS) initiation in resonant topologies |
| High dV/dt immunity | 70 V/ns rated slope withstands rapid voltage transients in motor drives and PV inverter DC-link switching |
Applications
| Telecom Server PSU | Industrial UPS Inverter |
|---|---|
Use Scenario: Primary switch in active clamp forward or asymmetrical half-bridge DC-DC converter for 48 V telecom rectifier modules. IC Role / Device Role / Timing Role: High-side main switch handling 25 A peak current at 100 kHz with fast body diode conducting freewheeling current. Use Value: Low Qrr (0.8 μC) cuts diode recovery loss by >40% vs. standard 600 V MOSFETs, improving efficiency from 93.2% to 94.1% at full load. | Use Scenario: Output stage switch in three-phase 600 V DC bus inverter for online double-conversion UPS systems. IC Role / Device Role / Timing Role: Bridge-leg switching device operating in hard-switched mode with 61 A pulsed drain current capability. Use Value: RthJC = 0.5 °C/W enables 250 W dissipation with ≤ 125 °C junction rise, supporting 10 kVA system scaling without forced air. |
| String PV Inverter | Induction Heating Inverter |
Use Scenario: DC-link switch in two-stage string inverter architecture interfacing 600–1000 V PV arrays to grid-tied H-bridge. IC Role / Device Role / Timing Role: High-voltage DC switch managing bidirectional energy flow during MPPT and reactive power control. Use Value: VDS = 600 V rating with 5% margin accommodates 1000 V array open-circuit voltage with transient clamping, ensuring long-term reliability. | Use Scenario: Half-bridge switch in 20–50 kHz resonant inverter driving induction coils for metal heating. IC Role / Device Role / Timing Role: Fast-switching power device requiring low trr and high dV/dt immunity to sustain oscillation under variable load coupling. Use Value: 70 V/ns dV/dt rating prevents spurious turn-on during high di/dt coil current reversal, eliminating false triggering in closed-loop control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP24N60M2 | RDS(on) = 0.135 Ω @ 10 V; Qg = 55 nC; trr = 160 ns; no UIS rating | Lacks avalanche energy rating; higher Qrr increases diode loss in hard-switched topologies | Prefer SIHP25N60EFL-BE3 where unclamped inductive stress or low-recovery-loss operation is required |
| IXTH24N60L2 | RDS(on) = 0.145 Ω @ 10 V; Qg = 42 nC; trr = 120 ns; TO-247 package | Lower Qg but higher RDS(on); TO-247 offers better thermal performance but larger footprint | Choose SIHP25N60EFL-BE3 for TO-220AB space constraints and balanced FOM in cost-sensitive 25 A designs |
Compared with STP24N60M2 and IXTH24N60L2, SIHP25N60EFL-BE3 delivers superior RDS(on) × Qg figure-of-merit (6.37 vs. 7.43 and 6.09 Ω·nC), lower Qrr (0.8 μC), and certified avalanche ruggedness - making it optimal for high-reliability 600 V hard-switched power conversion where thermal density and diode recovery are critical.
Availability
SIHP25N60EFL-BE3 is available at Aetrix Electronics and suitable for telecom server PSUs, industrial UPS inverters, and string PV inverters requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp-up.
Supply support for SIHP25N60EFL-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The SIHP25N60EFL-BE3 belongs to Vishay's E-series Power MOSFET family, engineered specifically for high-frequency, high-voltage switching applications demanding low gate charge, fast body diode recovery, and robust avalanche capability.
FAQ
What is the maximum continuous drain current rating for SIHP25N60EFL-BE3 at 100 °C case temperature?
The SIHP25N60EFL-BE3 has a continuous drain current rating of 16 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied when ambient or heatsink conditions elevate case temperature above 25 °C. The SIHP25N60EFL-BE3 maintains RDS(on) stability across this range due to its positive temperature coefficient.
Does SIHP25N60EFL-BE3 have a fully rated avalanche energy specification?
Yes, the SIHP25N60EFL-BE3 is fully rated for unclamped inductive switching with single-pulse avalanche energy (EAS) of 353 mJ at TJ = 25 °C, tested per JEDEC JESD24-1. This rating is confirmed in the Absolute Maximum Ratings section and applies under defined test conditions (VDD = 140 V, L = 28.2 mH, Rg = 25 Ω, IAS = 5 A). The SIHP25N60EFL-BE3 leverages this ruggedness for reliable operation in flyback and forward converter primary switches.
What is the typical reverse recovery charge (Qrr) of the body diode in SIHP25N60EFL-BE3?
The typical reverse recovery charge (Qrr) of the intrinsic body diode in SIHP25N60EFL-BE3 is 0.8 μC, measured at TJ = 25 °C, IF = IS = 12.5 A, dI/dt = 100 A/μs, and VR = 25 V. This low Qrr value-combined with trr = 138 ns typ-is a defining feature of the E-series technology and directly reduces commutation loss and EMI in bridge-leg configurations. The SIHP25N60EFL-BE3 achieves this via optimized epitaxial layer doping and termination structure.
Is SIHP25N60EFL-BE3 compatible with standard 10 V gate drivers?
Yes, the SIHP25N60EFL-BE3 is fully compatible with standard 10 V gate drivers. Its gate threshold voltage (VGS(th)) ranges from 3.0 V to 5.0 V, and RDS(on) is specified at VGS = 10 V. Total gate charge is 50 nC typ, allowing efficient drive with common ICs such as UCC27531 or IRS21844. The SIHP25N60EFL-BE3 does not require negative turn-off bias or special level-shifting circuitry in typical half-bridge implementations.
How does the "-BE3" suffix affect the electrical specifications of SIHP25N60EFL-BE3?
Per Vishay documentation, the "-BE3" suffix denotes an alternate manufacturing location and indicates lead (Pb)-free and halogen-free construction per RoHS Directive 2011/65/EU. Electrical specifications, thermal performance, and mechanical dimensions of SIHP25N60EFL-BE3 are identical to those of the base SIHP25N60EFL part. The SIHP25N60EFL-BE3 maintains full form-fit-function compatibility and shares the same datasheet (S22-0949-Rev. C).
SIHP25N60EFL-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 146mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2274 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SIHP25N60EFL-BE3 FAQ
1.How can I place an order for SIHP25N60EFL-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHP25N60EFL-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHP25N60EFL-BE3 reliable?
The price and inventory of SIHP25N60EFL-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP25N60EFL-BE3 is usually 5 days.
3.What payment methods are accepted for SIHP25N60EFL-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP25N60EFL-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHP25N60EFL-BE3?
SIHP25N60EFL-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHP25N60EFL-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHP25N60EFL-BE3?
For technical support, including SIHP25N60EFL-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP25N60EFL-BE3 requirements.
6.How does Aetrix verify that SIHP25N60EFL-BE3 is sourced from the original manufacturer or authorized distributors?
All SIHP25N60EFL-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP25N60EFL-BE3 meets industry standards.
7.What is the process for return or replacement of SIHP25N60EFL-BE3?
All SIHP25N60EFL-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP25N60EFL-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHP25N60EFL-BE3 part is unused and in its original packaging.
Return procedure for SIHP25N60EFL-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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