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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP25N60EFL-GE3

Name: SIHP25N60EFL-GE3
Brand: Vishay Siliconix
SKU: SIHP25N60EFL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP25N60EFL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP25N60EFL-GE3.pdf

Description:: MOSFET N-CH 600V 25A TO220AB

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Product details

Overview

SIHP25N60EFL-GE3 from Vishay Siliconix is a 600 V, 25 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.127 Ω R_DS(on) at V_GS = 10 V, 75 nC total gate charge, and fast body diode with 138 ns typical reverse recovery time (t_rr). It delivers low conduction and switching losses for high-efficiency hard-switched SMPS in telecom and industrial UPS.

For engineers reviewing the SIHP25N60EFL-GE3 datasheet, SIHP25N60EFL-GE3 pinout, SIHP25N60EFL-GE3 application, or SIHP25N60EFL-GE3 equivalent, key selection criteria include avalanche-rated ruggedness (353 mJ E_AS), low Q_rr (0.8–1.6 μC), dV/dt capability (70 V/ns), and thermal resistance (R_thJC = 0.5 °C/W) for reliable operation in high-power converters.

Technical Context

This MOSFET employs Vishay's E-series technology to optimize figure-of-merit (R_DS(on) × Q_g) while integrating a fast-recovery body diode with reduced t_rr, Q_rr, and I_RRM. Its 600 V V_DS rating and 150 °C max junction temperature support operation in high-bus-voltage topologies.

The device exhibits low input capacitance (C_iss = 2274 pF), low reverse transfer capacitance (C_rss = 4 pF), and controlled dynamic parameters-td(on) = 25–50 ns, tr = 39–68 ns-enabling precise timing control in high-frequency power stages up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	600 V - supports 400 V DC bus designs with 50 % voltage margin for transient spikes
R_DS(on) typ @ 25 °C	0.127 Ω - enables ≤ 40 W conduction loss at 25 A continuous drain current
Q_g max	75 nC - determines gate driver power requirement and switching speed trade-off
t_rr typ	138 ns - reduces diode recovery loss and EMI in bridge-leg commutation
E_AS	353 mJ - ensures single-pulse unclamped inductive switching robustness without failure
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤ 125 °C case-to-junction rise under heatsink cooling
I_D cont @ T_C = 100 °C	16 A - defines usable current derating in compact industrial enclosures

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and JEDEC-compliant outline. Thermal path optimized via direct die-to-tab interface.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 0–10 V logic-level drive; 17 nC Q_gs and 19 nC Q_gd define Miller plateau behavior
D (Drain)	High-side power output	Connected to tab; electrically tied to heatsink; rated for 600 V blocking and 61 A pulsed current
S (Source)	Power return / reference node	Common return for load current and gate drive loop; critical for minimizing ground bounce in high-dI/dt switching

Key Features

Feature	Design Value
Fast body diode with low Q_rr	Q_rr = 0.8–1.6 μC reduces turn-on loss and voltage overshoot in synchronous rectification and LLC resonant converters
Avalanche energy rated (UIS)	E_AS = 353 mJ enables reliable operation during inductive load switching without external snubbers
Low C_iss and C_rss	C_iss = 2274 pF and C_rss = 4 pF minimize Miller effect and improve dv/dt immunity in high-side configurations
Reduced FOM (R_DS(on) × Q_g)	9.54 Ω·nC - balances conduction and switching loss for optimal efficiency in 50–100 kHz SMPS
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912

Applications

Telecom Server PSU	Industrial UPS Inverter
Use Scenario: Primary-side switch in 3 kW telecom rectifier with 380–400 V DC bus and forced-air cooling. IC Role / Device Role / Timing Role: High-voltage N-channel switching element in active clamp forward or phase-shifted full-bridge topology. Use Value: Low R_DS(on) and fast body diode reduce conduction loss and dead-time loss, improving full-load efficiency by ≥0.8 % over legacy 650 V MOSFETs.	Use Scenario: Output H-bridge switch in 5 kVA online UPS delivering clean sine-wave AC under battery backup. IC Role / Device Role / Timing Role: Hard-switched power stage transistor handling 25 A RMS output current with 100 kHz PWM modulation. Use Value: 353 mJ E_AS rating and 70 V/ns dV/dt tolerance prevent failure during short-circuit events and grid transients.
String PV Inverter	Induction Heating Half-Bridge
Use Scenario: DC-link switch in 10 kW string inverter converting 600–900 V PV array voltage to 50/60 Hz AC. IC Role / Device Role / Timing Role: High-side switch in two-level inverter leg, operating with 16 kHz SPWM and active thermal management. Use Value: 0.5 °C/W R_thJC enables stable 150 °C junction operation using aluminum heatsinks, extending lifetime beyond 10 years.	Use Scenario: Resonant half-bridge switch in 15 kW induction cooker driving 20–50 kHz LC tank. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) capable main switch with body diode conducting reverse recovery current. Use Value: 138 ns t_rr and low Q_rr minimize diode conduction loss and ensure reliable ZVS across full power range.

Telecom Server PSU

Industrial UPS Inverter

Use Scenario: Primary-side switch in 3 kW telecom rectifier with 380–400 V DC bus and forced-air cooling.

IC Role / Device Role / Timing Role: High-voltage N-channel switching element in active clamp forward or phase-shifted full-bridge topology.

Use Value: Low R_DS(on) and fast body diode reduce conduction loss and dead-time loss, improving full-load efficiency by ≥0.8 % over legacy 650 V MOSFETs.

Use Scenario: Output H-bridge switch in 5 kVA online UPS delivering clean sine-wave AC under battery backup.

IC Role / Device Role / Timing Role: Hard-switched power stage transistor handling 25 A RMS output current with 100 kHz PWM modulation.

Use Value: 353 mJ E_AS rating and 70 V/ns dV/dt tolerance prevent failure during short-circuit events and grid transients.

String PV Inverter

Induction Heating Half-Bridge

Use Scenario: DC-link switch in 10 kW string inverter converting 600–900 V PV array voltage to 50/60 Hz AC.

IC Role / Device Role / Timing Role: High-side switch in two-level inverter leg, operating with 16 kHz SPWM and active thermal management.

Use Value: 0.5 °C/W R_thJC enables stable 150 °C junction operation using aluminum heatsinks, extending lifetime beyond 10 years.

Use Scenario: Resonant half-bridge switch in 15 kW induction cooker driving 20–50 kHz LC tank.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) capable main switch with body diode conducting reverse recovery current.

Use Value: 138 ns t_rr and low Q_rr minimize diode conduction loss and ensure reliable ZVS across full power range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW25N60DM2	600 V, 25 A, R_DS(on) = 0.135 Ω, Q_g = 65 nC, t_rr = 120 ns, D²PAK package	Lower Q_g but higher R_DS(on); surface-mount only; no TO-220AB footprint	Preferred for space-constrained SMT designs where thermal interface uses thermal pad; not drop-in for through-hole layouts.
IXFH25N60X3	600 V, 25 A, R_DS(on) = 0.125 Ω, Q_g = 62 nC, t_rr = 110 ns, TO-247AC package	Lower Q_g and faster t_rr, but larger TO-247 footprint and higher cost; R_thJC = 0.45 °C/W	Selected when maximum switching frequency > 120 kHz or peak thermal performance is critical; requires PCB layout change.

Compared with STW25N60DM2 and IXFH25N60X3, SIHP25N60EFL-GE3 offers the lowest cost-per-watt in through-hole high-power SMPS, balancing R_DS(on), Q_g, and ruggedness in JEDEC-standard TO-220AB-ideal for volume telecom and industrial power supplies where layout reuse and supply chain stability matter.

Availability

SIHP25N60EFL-GE3 is available at Aetrix Electronics and suitable for telecom server PSUs, industrial UPS inverters, and string PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHP25N60EFL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switch-mode power conversion-designed specifically for telecom, computing, industrial, and renewable energy systems demanding low FOM and fast body diode performance.

FAQ

What is the maximum continuous drain current of SIHP25N60EFL-GE3 at 100 °C case temperature?

The SIHP25N60EFL-GE3 supports 16 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation with appropriate heatsinking. The device maintains 25 A rating only at T_C = 25 °C, and its linear derating factor is 2 W/°C above 25 °C case temperature.

Does SIHP25N60EFL-GE3 have avalanche capability, and how is it rated?

Yes, SIHP25N60EFL-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 353 mJ at T_J = 25 °C. This rating is measured per JEDEC standard JESD24-1 with V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5 A. The device does not require external snubbers for typical hard-switched flyback or forward converter applications.

What is the body diode reverse recovery time (t_rr) of SIHP25N60EFL-GE3, and under what conditions is it measured?

The SIHP25N60EFL-GE3 has a typical reverse recovery time (t_rr) of 138 ns, measured at T_J = 25 °C with I_F = I_S = 12.5 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is confirmed in the "Drain-Source Body Diode Characteristics" section of the datasheet and reflects the fast-recovery E-series technology that reduces switching loss and EMI in bridge-leg configurations.

Is SIHP25N60EFL-GE3 compatible with standard TO-220AB footprints and heatsinks?

Yes, SIHP25N60EFL-GE3 uses the industry-standard TO-220AB package with mechanical dimensions and mounting hole alignment compliant with JEDEC TO-220AB outline. Its isolated drain tab allows direct mounting to a heatsink without insulating hardware, and its R_thJC = 0.5 °C/W is validated for use with common aluminum extrusion and stamped heatsinks in high-power applications.

How does the gate charge profile of SIHP25N60EFL-GE3 impact driver selection?

The SIHP25N60EFL-GE3 has Q_g = 75 nC max, Q_gs = 17 nC, and Q_gd = 19 nC, defining its gate drive requirements. A 1-A peak gate driver can achieve ~75 ns turn-on delay, while higher-current drivers (e.g., 2–4 A) reduce switching transitions and associated losses. The low C_rss (4 pF) minimizes Miller-induced shoot-through risk, supporting robust operation with standard isolated gate drivers like the UCC27531 or Si8233.

SIHP25N60EFL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 146mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2274 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP25N60EFL-GE3 FAQ

1.How can I place an order for SIHP25N60EFL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP25N60EFL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP25N60EFL-GE3 reliable?

The price and inventory of SIHP25N60EFL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP25N60EFL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP25N60EFL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP25N60EFL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP25N60EFL-GE3?

SIHP25N60EFL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP25N60EFL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP25N60EFL-GE3?

For technical support, including SIHP25N60EFL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP25N60EFL-GE3 requirements.

6.How does Aetrix verify that SIHP25N60EFL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP25N60EFL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP25N60EFL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP25N60EFL-GE3?

All SIHP25N60EFL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP25N60EFL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP25N60EFL-GE3 part is unused and in its original packaging.

Return procedure for SIHP25N60EFL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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