My Inquiry
My Account
Vishay Siliconix SIHP28N60EF-GE3
- Part No.:
- SIHP28N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SIHP28N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 28A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,414
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIHP28N60EF-GE3 from Vishay Siliconix is a 600 V, 28 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring ultra-low gate charge (120 nC max), fast body diode (trr = 142–284 ns), and low RDS(on) of 0.123 Ω at VGS = 10 V. It is engineered for high-efficiency LLC resonant and phase-shifted bridge converters in telecom and solar PV inverters.
For engineers reviewing the SIHP28N60EF-GE3 datasheet, SIHP28N60EF-GE3 pinout, SIHP28N60EF-GE3 application, or SIHP28N60EF-GE3 equivalent, key selection criteria include its 691 mJ single-pulse avalanche energy rating, 70 V/ns dV/dt capability, reduced Qrr (0.97–1.94 μC), and suitability for zero-voltage switching topologies requiring robust body diode recovery.
Technical Context
This MOSFET employs Vishay's EF-series fast-body-diode technology to minimize reverse recovery charge and time-critical for ZVS operation in high-frequency SMPS. Its low Ciss (2714 pF typ.) and Crss (6 pF typ.) support clean gate drive control and reduced EMI generation during hard switching.
The device integrates an avalanche-rated structure with 691 mJ UIS energy handling and operates across –55 °C to +150 °C junction temperature range. Thermal resistance RthJC is 0.5 °C/W, enabling high-power dissipation in compact TO-220AB layouts without derating below 100 °C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V DC bus designs with 50 % voltage margin for transient spikes in PV inverters and telecom rectifiers |
| RDS(on) max | 0.123 Ω @ VGS = 10 V - enables <1.7 W conduction loss at 14 A, reducing heatsink requirements in 1–3 kW power stages |
| Qg max | 120 nC - lowers gate driver power demand and allows use of cost-effective 1-A peak drivers in high-frequency (>100 kHz) applications |
| trr typ. | 142 ns - ensures reliable commutation in phase-shifted full-bridge topologies without external snubbers |
| EAS | 691 mJ - withstands unclamped inductive switching events in welding and battery charger fault conditions |
| dV/dt rating | 70 V/ns - suppresses false turn-on in high dv/dt environments like motor drives and industrial SMPS |
| Co(er) | 98 pF - reduces capacitive turn-off losses and improves efficiency in soft-switching LLC converters |
Pinout & Package
SIHP28N60EF-GE3 is housed in a through-hole TO-220AB package with standard lead spacing and isolated tab (drain-connected). The package provides 0.5 °C/W junction-to-case thermal resistance and supports >250 W continuous power dissipation with adequate heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires 10 V threshold (2.0–4.0 V range) and tolerates ±30 V; low input capacitance (2714 pF) eases drive design |
| D | Drain | Main high-side power terminal; electrically connected to metal tab; rated for 600 V blocking and 75 A pulsed current |
| S | Source | Power return path and reference for gate drive; also serves as cathode of integral fast body diode (VSD = 0.9–1.2 V @ 11 A) |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 142–284 ns and Qrr = 0.97–1.94 μC enable ZVS operation without external diodes in resonant converters |
| Low FOM (RDS(on) × Qg) | 14.7 Ω·nC - balances conduction and switching losses for optimal efficiency in 65–300 kHz SMPS |
| Avalanche rated | 691 mJ single-pulse UIS energy - eliminates need for external clamping in inductive load switching |
| Lead (Pb)-free & Halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912) |
| High dV/dt immunity | 70 V/ns - prevents spurious turn-on in high-speed half-bridge configurations with fast bus transients |
Applications
| Telecom Server Power Supply | Solar PV Inverter |
|---|---|
Use Scenario: Primary-side switch in 1.5–3 kW telecom rectifier using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating at 100–200 kHz with ZVS; body diode conducts freewheeling current during dead time. Use Value: Low Qrr and fast trr reduce body diode losses by >40 % vs. standard 600 V MOSFETs, improving full-load efficiency to >95.5 %. | Use Scenario: DC-link switching stage in string-level solar inverter with three-level NPC architecture. IC Role / Device Role / Timing Role: Upper-leg switch handling 600 V DC bus; subjected to repetitive unclamped inductive stress during grid fault clearing. Use Value: 691 mJ UIS rating ensures reliable operation under IEC 62109 fault conditions without additional protection circuitry. |
| HID Lighting Ballast | Industrial Battery Charger |
Use Scenario: Resonant half-bridge driver for 250–400 W high-intensity discharge lamp ballasts. IC Role / Device Role / Timing Role: Synchronous switch in LLC resonant tank; body diode recovers during zero-current switching transitions. Use Value: Co(er) = 98 pF minimizes capacitive turn-off loss, enabling stable operation up to 350 kHz with <1.2 °C/W thermal rise. | Use Scenario: Output-stage switch in 5–10 kW lithium-ion battery charger using asymmetric half-bridge with active clamp. IC Role / Device Role / Timing Role: Main power switch conducting 28 A continuous; exposed to 100 A surge currents during cold-start battery connection. Use Value: 75 A pulsed drain current rating and 150 °C max TJ allow sustained 100 % duty-cycle operation with forced-air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW28N60FD | 600 V, 28 A, RDS(on) = 0.13 Ω, Qg = 110 nC, trr = 160 ns, TO-247 package | Larger TO-247 footprint; higher RthJC (0.45 °C/W) but lower Qg; no halogen-free marking | Preferred where board space permits larger package and slightly lower gate charge is prioritized over RoHS compliance |
| IXFH28N60P | 600 V, 28 A, RDS(on) = 0.135 Ω, Qg = 135 nC, trr = 220 ns, TO-247 package | Higher Qrr (2.3 μC) and slower trr; same avalanche rating (690 mJ); non-RoHS variant | Acceptable for non-automotive industrial SMPS where body diode speed is less critical and legacy sourcing is required |
Compared with STW28N60FD and IXFH28N60P, SIHP28N60EF-GE3 offers superior body diode performance (lower Qrr/trr), RoHS/halogen-free compliance, and TO-220AB compatibility-making it optimal for space-constrained, high-reliability telecom and solar applications where ZVS integrity and regulatory alignment are mandatory.
Availability
SIHP28N60EF-GE3 is available at Aetrix Electronics and suitable for telecom server power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle assurance, and traceable RoHS-compliant sourcing.
Supply support for SIHP28N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The EF Series, including SIHP28N60EF-GE3, was developed specifically for high-frequency resonant and soft-switching power converters demanding fast body diode recovery, low switching losses, and rugged avalanche capability.
FAQ
What is the maximum continuous drain current rating for SIHP28N60EF-GE3 at 100 °C case temperature?
The SIHP28N60EF-GE3 has a continuous drain current rating of 18 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 28 A rating at TC = 25 °C, based on a linear derating factor of 2 W/°C and RthJC = 0.5 °C/W. Designers must ensure heatsink design maintains TC ≤ 100 °C for sustained 18 A operation.
Does SIHP28N60EF-GE3 support gate drive with 5 V logic-level signals?
No, SIHP28N60EF-GE3 is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but full enhancement and guaranteed RDS(on) ≤ 0.123 Ω require VGS = 10 V. Driving it with only 5 V risks incomplete turn-on, excessive conduction loss, and thermal runaway. A dedicated 10–15 V gate driver is required for reliable operation.
What is the significance of the "-GE3" suffix in SIHP28N60EF-GE3?
Per Vishay's ordering nomenclature, the "-GE3" suffix indicates the SIHP28N60EF-GE3 is packaged in tape-and-reel format, lead (Pb)-free, and fully compliant with RoHS Directive 2011/65/EU and Vishay's halogen-free standard (document 99912). It confirms environmental compliance and surface-mount compatible packaging-not applicable here since TO-220AB is through-hole, but denotes standardized green manufacturing.
How does the body diode performance of SIHP28N60EF-GE3 compare to standard 600 V MOSFETs?
The SIHP28N60EF-GE3 features a fast body diode with trr = 142–284 ns and Qrr = 0.97–1.94 μC-up to 50 % lower Qrr than standard 600 V MOSFETs. This directly reduces reverse recovery losses and EMI in ZVS topologies. Its VSD = 0.9–1.2 V at 11 A also minimizes forward conduction loss during freewheeling intervals.
Is SIHP28N60EF-GE3 suitable for use in automotive applications?
SIHP28N60EF-GE3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical systems. While its –55 °C to +150 °C operating range meets ambient temperature requirements, Vishay does not specify automotive-grade reliability testing, PPAP documentation, or failure-in-time (FIT) data for this part. It is intended for industrial, telecom, and renewable energy applications per its official product summary and disclaimer.
SIHP28N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 123mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2714 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SIHP28N60EF-GE3 FAQ
1.How can I place an order for SIHP28N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHP28N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHP28N60EF-GE3 reliable?
The price and inventory of SIHP28N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP28N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHP28N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP28N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHP28N60EF-GE3?
SIHP28N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHP28N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHP28N60EF-GE3?
For technical support, including SIHP28N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP28N60EF-GE3 requirements.
6.How does Aetrix verify that SIHP28N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHP28N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP28N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHP28N60EF-GE3?
All SIHP28N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP28N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHP28N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHP28N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIHP28N60EF-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
